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1. 发明申请

US20060003573A1 Method to fabricate aligned dual damacene openings 有权
标题翻译：制造对齐双重断裂孔的方法
公开(公告)号：US20060003573A1
公开(公告)日：2006-01-05
申请号：US11174805
申请日：2005-07-05
申请人： Yeow Lim , Wuping Liu , Tae Lee , Bei Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Neo
发明人： Yeow Lim , Wuping Liu , Tae Lee , Bei Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Neo
IPC分类号： H01L21/4763
CPC分类号： H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.
摘要翻译：对准的双镶嵌开口结构，包括以下。具有形成在其上的金属结构的结构。金属结构上的图案层叠层; 所述层堆叠按升序包括：图案化的底部蚀刻停止层; 图案化的下介电材料层; 图案化的中间蚀刻停止层; 和图案化的中间介电材料层; 下部和中间介电层由相同的材料组成。在图案化的底部蚀刻停止层和图案化的下部介电材料层中的上部沟槽开口; 以及图案化的中间蚀刻停止层和图案化的中间介电材料层中的下通孔开口。下通道开口与上沟槽开口连通。其中上沟槽开口和下通孔开口包括对准的双镶嵌开口。

2. 发明申请

US20050090095A1 Method to fabricate aligned dual damascene openings 有权
公开(公告)号：US20050090095A1
公开(公告)日：2005-04-28
申请号：US10690998
申请日：2003-10-22
申请人： Yeow Lim , Wuping Liu , Tae Lee , Bei Zhang , Juan Tan , Alan Cuthbertson , Chin Neo
发明人： Yeow Lim , Wuping Liu , Tae Lee , Bei Zhang , Juan Tan , Alan Cuthbertson , Chin Neo
IPC分类号： H01L21/4763 , H01L21/768 , H01L29/06
CPC分类号： H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： A method of forming an aligned dual damascene opening, comprising including the following sequential steps. A structure having a metal structure formed thereover is provided. A layer stack is formed over the metal structure. The layer stack comprises, in ascending order: a bottom etch stop layer; a lower dielectric material layer; a middle etch stop layer; a middle dielectric material layer; and an upper dielectric layer. The upper dielectric layer is patterned to form an opening exposing a portion of the underlying middle dielectric material layer. The opening having a width. A patterned mask layer is formed over the patterned upper dielectric layer leaving exposed opposing portions of the patterned upper dielectric layer. The middle dielectric material layer is patterned to form an opening therein using the patterned mask layer and the exposed portions of the upper dielectric layer as masks. The middle dielectric material layer opening exposing a portion of the middle etch stop layer. The middle etch stop layer is removed at its exposed portion to form a patterned middle etch stop layer having an opening exposing a portion of the lower dielectric material layer. Simultaneously patterning: the patterned middle dielectric material layer using the patterned upper dielectric layer as a mask to form an inchoate upper trench opening; and the lower dielectric material layer using the patterned mask layer and the patterned middle etch stop layer as masks to form an inchoate lower via opening aligned with the inchoate upper trench opening. The inchoate lower via opening exposing a portion of the underlying bottom etch stop layer. The patterned mask layer is removed. The patterned upper dielectric material layer, the exposed portions of the patterned middle etch stop layer and the exposed portion of the bottom etch stop layer are removed to convert: the inchoate upper trench opening into a final upper trench opening; and the inchoate lower via opening into a final lower via opening to form the dual damascene opening.

3. 发明申请

US20050127495A1 Method of fabrication of a die oxide ring 有权
标题翻译：芯片氧化物环的制造方法
公开(公告)号：US20050127495A1
公开(公告)日：2005-06-16
申请号：US10734423
申请日：2003-12-12
申请人： Fan Zhang , Bei Zhang , Wuping Liu , Kho Chok , Liang Hsia , Tae Lee , Juan Tan , Xian Wang
发明人： Fan Zhang , Bei Zhang , Wuping Liu , Kho Chok , Liang Hsia , Tae Lee , Juan Tan , Xian Wang
IPC分类号： H01L23/00 , H01L23/31 , H01L23/04 , H01L21/4763
CPC分类号： H01L23/562 , H01L23/3178 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： In accordance with the objectives of the invention a new design and method for the implementation thereof is provided in the form of an “oxide ring”. A conventional die is provided with a guard ring or sealing ring, which surrounds and isolates the active surface area of an individual semiconductor die. The “oxide ring” of the invention surrounds the guard ring or sealing ring and forms in this manner a mechanical stress release buffer between the sawing paths of the die and the active surface area of the singulated individual semiconductor die.
摘要翻译：根据本发明的目的，以“氧化物环”的形式提供了一种用于实施本发明的新设计和方法。传统的模具设置有保护环或密封环，其围绕并隔离单个半导体管芯的有源表面积。本发明的“氧化物环”围绕保护环或密封环，并以这种方式形成在管芯的锯切路径和单个化的半导体管芯的有源表面区域之间的机械应力释放缓冲器。

4. 发明申请

US20050093158A1 Self-patterning of photo-active dielectric materials for interconnect isolation 失效
标题翻译：用于互连隔离的光电介质材料的自构图
公开(公告)号：US20050093158A1
公开(公告)日：2005-05-05
申请号：US10697745
申请日：2003-10-30
申请人： Wuping Liu , Bei Zhang , Liang Hsia
发明人： Wuping Liu , Bei Zhang , Liang Hsia
IPC分类号： H01L21/4763 , H01L21/48 , H01L21/768 , H01L23/48 , H01L23/532 , H01L29/40
CPC分类号： H01L21/76814 , H01L21/4846 , H01L21/76802 , H01L21/76807 , H01L21/76828 , H01L23/5329 , H01L2221/1026 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.
摘要翻译：根据本发明的目的，提供了一种用于创建互连图案的新方法。本发明提供了一种用于产生互连图案的绝缘材料的光电介质（PAD）层，不需要使用光致抗蚀剂的上覆曝光掩模。

5. 发明申请

US20070134941A1 Structure and method to prevent charge damage from e-beam curing process 有权
标题翻译：防止电子束固化过程中电荷损伤的结构和方法
公开(公告)号：US20070134941A1
公开(公告)日：2007-06-14
申请号：US11297485
申请日：2005-12-08
申请人： Huang Liu , Bei Zhang , Wuping Liu , John Sudijono , Liang Hsia
发明人： Huang Liu , Bei Zhang , Wuping Liu , John Sudijono , Liang Hsia
IPC分类号： H01L21/469
CPC分类号： H01L21/31058 , B05D3/068 , H01J2237/04735 , H01J2237/3156 , H01L21/02112 , H01L21/02274 , H01L21/02351 , H01L21/3105 , H01L21/312 , H01L21/31633 , H01L21/76825 , H01L21/76834
摘要： An example embodiment is a method of curing a film over a semiconductor structure. We provide a semiconductor structure comprised of a substrate and an interconnect structure. We provide a film over the semiconductor structure. We provide an electron source, an anode grid between the electron source and the semiconductor structure. We cure the film by exposing the film to an electron beam from the electron source that passes through the anode grid. We control the electron beam by controlling the bias voltage between the anode grid and the semiconductor structure. Another embodiment is a tool for curing a film.
摘要翻译：示例性实施例是在半导体结构上固化膜的方法。我们提供由衬底和互连结构组成的半导体结构。我们提供半导体结构的电影。我们提供电子源，电子源和半导体结构之间的阳极栅极。我们通过将膜暴露于电子源通过阳极栅格的电子束来固化膜。我们通过控制阳极栅极和半导体结构之间的偏置电压来控制电子束。另一个实施例是用于固化膜的工具。

6. 发明申请

US20060128156A1 Self-patterning of photo-active dielectric materials for interconnect isolation 有权
标题翻译：用于互连隔离的光电介质材料的自构图
公开(公告)号：US20060128156A1
公开(公告)日：2006-06-15
申请号：US11345890
申请日：2006-02-02
申请人： Wuping Liu , Bei Zhang , Liang Hsia
发明人： Wuping Liu , Bei Zhang , Liang Hsia
IPC分类号： H01B13/00 , H01L21/311 , B44C1/22 , C03C25/68
CPC分类号： H01L21/76814 , H01L21/4846 , H01L21/76802 , H01L21/76807 , H01L21/76828 , H01L23/5329 , H01L2221/1026 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.
摘要翻译：根据本发明的目的，提供了一种用于创建互连图案的新方法。本发明提供了一种用于产生互连图案的绝缘材料的光电介质（PAD）层，不需要使用光致抗蚀剂的上覆曝光掩模。

7. 外观设计

USD983600S1 Kettle nozzle 有权
公开(公告)号：USD983600S1
公开(公告)日：2023-04-18
申请号：US29856328
申请日：2022-10-13
申请人： Bei Zhang
设计人： Bei Zhang

8. 发明授权

US09423476B2 Apparatus, systems and methods for facilitating signal excitation and/or reception in a magnetic resonance system 有权
标题翻译：用于在磁共振系统中促进信号激发和/或接收的装置，系统和方法
公开(公告)号：US09423476B2
公开(公告)日：2016-08-23
申请号：US13446689
申请日：2012-04-13
申请人： Graham C. Wiggins , Bei Zhang , Daniel K. Sodickson
发明人： Graham C. Wiggins , Bei Zhang , Daniel K. Sodickson
IPC分类号： G01R33/345 , G01R33/48
CPC分类号： G01R33/345 , G01R33/4802
摘要： In accordance with certain exemplary embodiments of the present disclosure, provided herein are apparatus, systems and methods for, e.g., facilitating signal excitation and/or reception in a magnetic resonance system, such as, e.g., a system configured for magnetic resonance imaging (MRI) and/or spectroscopy. For example, exemplary embodiments of a method for traveling wave imaging in an MRI system can include, e.g., a circular conductive structure lying in a transverse plane within the scanner bore. The exemplary structure can be concentric with the center of the scanner RF shield. The structure can be arranged to have a resonant mode at the MR frequency characterized by a current pattern which can be configured to excite and receive an exemplary waveguide mode. The exemplary current pattern can be further configured to facilitate traveling wave imaging, for example.
摘要翻译：根据本公开的某些示例性实施例，本文提供了用于例如在磁共振系统中促进信号激发和/或接收的装置，系统和方法，例如，被配置用于磁共振成像（MRI））和/或光谱学。例如，在MRI系统中用于行波成像的方法的示例性实施例可以包括例如位于扫描器孔内的横向平面内的圆形导电结构。示例性结构可以与扫描器RF屏蔽的中心同心。该结构可以被布置成在MR频率处具有谐振模式，其特征在于可以配置为激发和接收示例性波导模式的电流模式。例如，该示例性电流模式可进一步配置成便于行波成像。

9. 发明授权

US08946510B2 Compositions and methods for control of insect infestations in plants 有权
公开(公告)号：US08946510B2
公开(公告)日：2015-02-03
申请号：US11547764
申请日：2005-04-08
申请人： James A. Baum , Larry A. Gilbertson , David K. Kovalic , Thomas J. LaRosa , Maolong Lu , Tichafa R. I. Munyikwa , James K. Roberts , Wei Wu , Bei Zhang
发明人： James A. Baum , Larry A. Gilbertson , David K. Kovalic , Thomas J. LaRosa , Maolong Lu , Tichafa R. I. Munyikwa , James K. Roberts , Wei Wu , Bei Zhang
IPC分类号： C12N15/82 , C12N15/87 , A01H1/00 , A01N63/02
CPC分类号： C12N15/8286 , A01N63/02 , C12N15/8275 , C12N15/8279 , C12N15/8285 , Y02A40/162 , Y02A40/164
摘要： The present invention is directed to controlling pest infestation by inhibiting one or more biological functions in an invertebrate pest. The invention discloses methods and compositions for use in controlling pest infestation by feeding one or more different recombinant double stranded RNA molecules to the pest in order to achieve a reduction in pest infestation through suppression of gene expression. The invention is also directed to methods for making transgenic plants that express the double stranded RNA molecules, and to particular combinations of transgenic pesticidal agents for use in protecting plants from pest infestation.

10. 发明授权

US08631737B2 Manual bread-toaster, with lid 有权
标题翻译：手动面包机，带盖
公开(公告)号：US08631737B2
公开(公告)日：2014-01-21
申请号：US12737717
申请日：2009-03-26
申请人： George Mohan Zhang , Bei Zhang , Huajin Chen
发明人： George Mohan Zhang , Bei Zhang , Huajin Chen
IPC分类号： A47J37/08
CPC分类号： A47J37/08 , A47J37/0842
摘要： The bread toaster includes a toaster frame defining at least one toaster slot for selectively receiving the bread slice, a heating device, and a lid arrangement. The lid arrangement includes a front and a rear sliding member, a plurality of sliding guiders, and at least one toaster lid. The toaster lid is coupled with the front and the rear sliding members in such a manner that the toaster lid is arranged to move between a closed position and an opened position, wherein in the closed position, the toaster lid is moved by the front and the rear sliding members to close the toaster slot, wherein in the opened position, the toaster lid is moved by the front and the rear sliding members to expose the toaster slot to an exterior of the toaster frame.
摘要翻译：面包烤面包机包括定义至少一个烤面包机插槽的烤箱框架，用于选择性地接收面包片，加热装置和盖子装置。盖装置包括前滑动件和后滑动件，多个滑动导向件和至少一个烤面包机盖。烤面包机盖以前后滑动部件的方式配合，使得烤面包机盖布置成在关闭位置和打开位置之间移动，其中，在关闭位置，烤面包机盖由前部和后部滑动构件以关闭烤面包机槽，其中在打开位置，烤面包机盖由前部和后部滑动构件移动，以将烤面包机插槽暴露于烤面包机框架的外部。

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