专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06361662B1 Method for fabricating a semiconductor device in a magnetron sputtering system 失效
标题翻译：在磁控溅射系统中制造半导体器件的方法
公开(公告)号：US06361662B1
公开(公告)日：2002-03-26
申请号：US08996321
申请日：1997-12-22
申请人： Yasuhiro Chiba , Keiichi Maeda , Mitsuru Taguchi
发明人： Yasuhiro Chiba , Keiichi Maeda , Mitsuru Taguchi
IPC分类号： C23C1434
CPC分类号： H01L29/665 , C23C14/165 , C23C14/35 , H01J37/3405 , H01J37/3426 , H01L21/28052 , H01L21/28518 , H01L21/2855
摘要： Disclosed is a magnetron sputtering system enabling formation of a film of a ferroelectric substance by suppressing occurrence of a magnetic field due to an eddy current. The magnetron sputtering system includes a flat target; magnetic field applying means (magnets), provided in the vicinity of a back surface of the target, for applying a magnetic field to a front surface of the target; and magnetic field rotating means (motor) for rotating the magnetic field applying means so as to rotate the magnetic field applied to the front surface of the target. The magnetic field rotating means is provided with rotational speed varying means (speed controller) for varying the rotational speed of the magnetic field applied by the magnetic field rotating means.
摘要翻译：公开了一种磁控管溅射系统，其能够通过抑制由涡流引起的磁场的产生而形成铁电体的膜。磁控溅射系统包括平板靶; 设置在所述靶的背面附近的磁场施加装置（磁体），用于向所述目标的前表面施加磁场; 以及用于旋转磁场施加装置的磁场旋转装置（马达），以便旋转施加到目标的前表面的磁场。磁场旋转装置设置有用于改变由磁场旋转装置施加的磁场的转速的转速改变装置（速度控制器）。

2. 发明授权

US6051490A Method of forming wirings 失效
标题翻译：形成布线的方法
公开(公告)号：US6051490A
公开(公告)日：2000-04-18
申请号：US976314
申请日：1997-11-21
申请人： Mitsuru Taguchi , Keiichi Maeda
发明人： Mitsuru Taguchi , Keiichi Maeda
IPC分类号： H01L21/768 , H01L23/485 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76802 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76867 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002
摘要： A method of forming wirings which includes forming a film of a silicon-containing metal layer at a high temperature on an underlying metal, thereby forming a silicon alloy layer which includes the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer, occurrence of Si nodules can be eliminated to obtain wirings of high reliability.
摘要翻译：一种形成布线的方法，其包括在下面的金属上形成高温下的含硅金属层的膜，从而在成膜期间形成包括下面的金属和含硅金属的硅合金层。在通过含硅金属层形成布线的情况下，可以消除Si结节的发生，从而获得高可靠性的布线。

3. 发明授权

US5719446A Multilayer interconnect structure for semiconductor device and method of manufacturing same 失效
标题翻译：用于半导体器件的多层互连结构及其制造方法
公开(公告)号：US5719446A
公开(公告)日：1998-02-17
申请号：US797925
申请日：1997-02-12
申请人： Mitsuru Taguchi , Keiichi Maeda , Hiroshi Suzawa , Hidenori Kenmotsu , Teruo Hirayama
发明人： Mitsuru Taguchi , Keiichi Maeda , Hiroshi Suzawa , Hidenori Kenmotsu , Teruo Hirayama
IPC分类号： H01L21/203 , H01L21/205 , H01L21/3205 , H01L21/324 , H01L21/768 , H01L23/12 , H01L23/52 , H01L23/522 , H01L23/532 , H01L29/41
CPC分类号： H01L23/5226 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： A multilayer interconnect structure for a semiconductor device. The structure comprises a lower patterned metallization layer, a higher patterned metallization layer, and filled holes for electrically interconnecting these two layers. The two metallization layers are formed out of aluminum or an aluminum alloy by high-temperature aluminum sputtering or aluminum reflow techniques. A suction-preventing layer is formed either at the bottoms of the contact holes or on the surface of the lower metallization layer to prevent the material of the lower metallization layer from being sucked into the overlying contact holes.
摘要翻译：一种用于半导体器件的多层互连结构。该结构包括下图案化的金属化层，较高图案化的金属化层和用于电连接这两层的填充孔。两个金属化层由铝或铝合金通过高温铝溅射或铝回流技术形成。在接触孔的底部或下部金属化层的表面上形成防吸水层，以防止下部金属化层的材料被吸入上覆的接触孔中。

4. 发明授权

US06268290B1 Method of forming wirings 失效
标题翻译：形成布线的方法
公开(公告)号：US06268290B1
公开(公告)日：2001-07-31
申请号：US08250332
申请日：1994-05-27
申请人： Mitsuru Taguchi , Keiichi Maeda
发明人： Mitsuru Taguchi , Keiichi Maeda
IPC分类号： H01L2144
CPC分类号： H01L21/76802 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76877 , H01L23/53219 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A method of forming wirings which comprises forming a film of a silicon-containing metal layer at a high temperature on an underlying metals, thereby forming a silicon alloy layer comprising the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer occurrence of Si nodules can be eliminated to obtain wirings of high reliability.
摘要翻译：一种形成布线的方法，其包括在下面的金属上形成高温下的含硅金属层的膜，从而在成膜期间形成包含下面的金属和含硅金属的硅合金层。在通过含硅金属层形成布线的情况下，可以消除Si结节的发生，从而获得高可靠性的布线。

5. 发明授权

US5776830A Process for fabricating connection structures 失效
标题翻译：制造连接结构的工艺
公开(公告)号：US5776830A
公开(公告)日：1998-07-07
申请号：US947704
申请日：1997-10-09
申请人： Hirofumi Sumi , Keiichi Maeda , Yukiyasu Sugano , Kazuhide Koyama , Mitsuru Taguchi , Kazuhiro Hoshino
发明人： Hirofumi Sumi , Keiichi Maeda , Yukiyasu Sugano , Kazuhide Koyama , Mitsuru Taguchi , Kazuhiro Hoshino
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/283
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856
摘要： The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.
摘要翻译：本发明提供一种制造连接结构的方法，该连接结构包括具有优异的阻挡性能并具有相对于半导体衬底的改善的欧姆特性的抗反应层。因此，本发明包括通过暂时停止膜沉积来形成第一抗反应层，然后再次引发膜沉积，以在先前沉积的第一抗反应层的表面上形成第二抗反应层。沉积抗反应层后可以对结构进行热处理。

6. 发明授权

US06465342B1 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06465342B1
公开(公告)日：2002-10-15
申请号：US09524287
申请日：2000-03-13
申请人： Mitsuru Taguchi , Naoki Komai
发明人： Mitsuru Taguchi , Naoki Komai
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/76801 , H01L21/76808 , H01L21/76816 , H01L2221/1031 , H01L2221/1036
摘要： The object of the invention is to solve failure in embedding conductive material by electroplating caused because organic insulating material is deformed by the compressive stress of a barrier metal layer such as tantalum nitride used for grooved interconnection, a groove-used for grooved interconnection is deformed and a seed layer is not fully formed in the groove and to enhance reliability upon interconnection. To achieve the object, a semiconductor device according to the invention is based upon a semiconductor device having a groove formed through a second insulating film over a substrate, a barrier metal layer formed at least on the inner wall of the groove and grooved interconnection embedded inside the groove via the barrier metal layer and is characterized in that a concave portion is continuously or intermittently formed along a groove through a second insulating film within a predetermined interval from grooved interconnection.
摘要翻译：本发明的目的是解决由于有机绝缘材料被用于沟槽互连的诸如氮化钽之类的阻挡金属层的压缩应力而变形而导致的电镀埋入导电材料的故障，用于沟槽互连的槽变形，种子层没有完全形成在沟槽中并且在互连时提高可靠性。为了实现该目的，根据本发明的半导体器件基于半导体器件，该半导体器件具有通过衬底上的第二绝缘膜形成的沟槽，至少形成在槽的内壁上的阻挡金属层和嵌入在内部的沟槽互连所述槽通过所述阻挡金属层，其特征在于，在与槽互连的预定间隔内，通过第二绝缘膜沿凹槽连续地或间歇地形成凹部。

7. 发明授权

US5137491A Air spout device for air conditioning system for use in automotive vehicle 失效
标题翻译：用于汽车的空调系统的排气装置
公开(公告)号：US5137491A
公开(公告)日：1992-08-11
申请号：US708054
申请日：1991-05-30
申请人： Yuji Ishihara , Mitsuru Taguchi
发明人： Yuji Ishihara , Mitsuru Taguchi
IPC分类号： B60H1/24 , B60H1/34
CPC分类号： B60H1/3407 , B60H1/247
摘要： An air spout device for an air conditioning system comprises a duct having an intake portion and a ventilator spout. A plurality of guide vanes are arranged in the duct to define passages, and a plurality of dampers are arranged between the intake portion and the plurality of guide vanes to selectively open and close the passages, the plurality of dampers being rotatable with its shaft to assume concentration blow, diffusion blow, and avoidance blow modes. A blow mode selecting mechanism is operatively connected to the shaft to allow the plurality of dampers to assume the concentration blow, diffusion blow, and avoidance blow modes.
摘要翻译：用于空调系统的空气喷口装置包括具有进气部分和通风机喷口的管道。多个引导叶片布置在管道中以限定通道，并且多个阻尼器布置在进气部分和多个导向叶片之间，以选择性地打开和关闭通道，多个阻尼器可随轴转动而呈现集中打击，扩散打击和回避吹模式。吹扫模式选择机构可操作地连接到轴，以允许多个阻尼器采取浓度吹扫，扩散吹扫和回避吹扫模式。

8. 发明授权

US06593246B1 Process for producing semiconductor device 有权
公开(公告)号：US06593246B1
公开(公告)日：2003-07-15
申请号：US09525265
申请日：2000-03-14
申请人： Toshiaki Hasegawa , Mitsuru Taguchi , Koji Miyata
发明人： Toshiaki Hasegawa , Mitsuru Taguchi , Koji Miyata
IPC分类号： H01L21302
CPC分类号： H01L21/76835 , H01L21/02118 , H01L21/0212 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/3127 , H01L21/31695 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L2221/1031
摘要： A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level dielectric between the wirings to decrease a wiring capacitance, and the problem occurring on misalignment. A process for producing a semiconductor device comprising an inter level dielectric containing a xerogel film or a fluorine resin film comprises a step of forming, on the inter level dielectric comprising a lower layer of the inter level dielectric formed with an organic film and an upper layer of the inter level dielectric formed with a xerogel film or a fluorine resin film, a first mask to be an etching mask for forming a via contact hole by etching the inter level dielectric, and a step of forming, on the first mask, a second mask, which comprises a different material from the first mask, to be an etching mask for forming a wiring groove by etching the inter level dielectric.

9. 发明授权

US5308793A Method for forming interconnector 失效
标题翻译：形成互连器的方法
公开(公告)号：US5308793A
公开(公告)日：1994-05-03
申请号：US916723
申请日：1992-07-22
申请人： Mitsuru Taguchi , Hirofumi Sumi
发明人： Mitsuru Taguchi , Hirofumi Sumi
IPC分类号： H01L21/28 , H01L21/318 , H01L21/768 , H01L23/522 , H01L21/44
CPC分类号： H01L21/28518 , H01L21/76831 , H01L21/76843 , H01L21/76877
摘要： A method of forming an interconnector configuration includes an arrangement for preventing a Ti type barrier metal associated with an silicone oxide type interlayer insulation membrane, from becoming oxidized and therefore facilitating the burial of high aspect ratio connection holes in a Al layer.The connection holes which are opened in the silicon oxide type interlayer insulation membrane are coated inside with a Ti type barrier metal are apt to be oxidized by oxygen which is released from the interlayer insulating membrane. This oxidation produces a reaction which deteriorates the reaction characteristics with a Al material layer during the burial of the connection holes and produces problems.Accordingly, in order to prevent the oxidation of the barrier metal, a SiNx side wall layer is formed on the sides of the connection hole. The provision of this layer is not limited to the side walls of the connection holes and can be also provided on the upper surface of the interlayer insulation membrane with the same effect. Alternatively, the interlayer insulation membrane per se can be formed of SiNx. In either case, the reaction between the barrier metal and the Al material layer is desirably prevented and highly uniform filling of the through holes with Al can be achieved during the burial process.
摘要翻译：形成互连器构造的方法包括用于防止与氧化硅类型的层间绝缘膜相关联的Ti型阻挡金属变得氧化并因此有助于Al层中的高纵横比连接孔的掩埋的布置。在氧化硅类层间绝缘膜中开口的连接孔被内部涂覆有Ti型阻挡金属，容易被从层间绝缘膜释放的氧氧化。这种氧化产生在连接孔的埋藏期间使Al材料层的反应特性恶化的反应并且产生问题。因此，为了防止阻挡金属的氧化，在连接孔的侧面形成有SiNx侧壁层。该层的设置不限于连接孔的侧壁，也可以在层间绝缘膜的上表面上具有相同的效果。或者，层间绝缘膜本身可以由SiNx形成。在任一种情况下，期望防止阻挡金属和Al材料层之间的反应，并且在埋入过程中可以实现具有Al的通孔的高度均匀填充。

10. 发明授权

US3992174A Specimen capsule and process for gas chromatography 失效
标题翻译：样品胶囊和气相色谱法
公开(公告)号：US3992174A
公开(公告)日：1976-11-16
申请号：US532537
申请日：1974-12-13
申请人： Sigeru Nakamura , Mitsuru Taguchi , Satoru Naniwada , Naoki Ohguri
发明人： Sigeru Nakamura , Mitsuru Taguchi , Satoru Naniwada , Naoki Ohguri
IPC分类号： G01N30/12 , B01D15/08
CPC分类号： G01N30/12 , G01N2030/125
摘要： For use in gas chromatograph, there is provided a specimen capsule which has a sample wrapped in a foil or net of ferromagnetic metal. Also provided is a process for gas chromatography which comprises the steps of placing the specimen capsule in the vaporizer of the gas chromatograph, vaporizing the sample by means of alternative current induction and conducting necessary analysis on the resultant gases.
摘要翻译：为了在气相色谱仪中使用，提供了一个样品胶囊，其中包含箔或铁磁金属网的样品。还提供了一种用于气相色谱法的方法，其包括以下步骤：将样品胶囊放置在气相色谱仪的蒸发器中，通过替代电流感应蒸发样品并对所得气体进行必要的分析。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式