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1. 发明授权

US06270948B1 Method of forming pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06270948B1
公开(公告)日：2001-08-07
申请号：US09327223
申请日：1999-06-07
申请人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
发明人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
IPC分类号： G03F700
CPC分类号： G03F7/094 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3121
摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.
摘要翻译：一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案和碘。采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

2. 发明授权

US6025117A Method of forming a pattern using polysilane 失效
标题翻译：使用聚硅烷形成图案的方法
公开(公告)号：US6025117A
公开(公告)日：2000-02-15
申请号：US986517
申请日：1997-12-08
申请人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
发明人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
IPC分类号： C08G77/60 , C08G83/00 , G03F7/075 , G03F7/09 , G03F7/00
CPC分类号： C08G83/003 , C08G77/60 , G03F7/0754 , G03F7/091
摘要： A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.
摘要翻译：具有由以下通式表示的重复单元的聚硅烷（LPS-I），其中A是二价有机基团，R 1取代基可以相同或不同，并且选自氢原子和取代或未取代的烃基和甲硅烷基。聚硅烷在有机溶剂中的共溶剂性优异，可以通过涂布法形成膜，机械强度和耐热性优异。在半导体器件的制造方法中，可以将聚硅烷用作蚀刻掩模以设置在抗蚀剂下。聚硅烷在曝光期间表现出抗反射效果，相对于抗蚀剂具有大的蚀刻速率比和优异的耐干蚀刻性。

3. 发明授权

US5994007A Pattern forming method utilizing first insulative and then conductive overlayer and underlayer 失效
标题翻译：使用第一绝缘导电覆层和底层的图案形成方法
公开(公告)号：US5994007A
公开(公告)日：1999-11-30
申请号：US213373
申请日：1998-12-17
申请人： Yasuhiko Sato , Atsushi Ando , Yasunobu Onishi , Yoshihiko Nakano , Shuji Hayase , Rikako Kani
发明人： Yasuhiko Sato , Atsushi Ando , Yasunobu Onishi , Yoshihiko Nakano , Shuji Hayase , Rikako Kani
IPC分类号： G03F7/09 , G03F7/20 , G03F9/00
CPC分类号： G03F7/203 , G03F7/091 , G03F7/093 , Y10S430/143
摘要： Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.
摘要翻译：公开了一种图案形成方法，包括以下步骤：提供抗蚀剂膜，对抗蚀剂膜施加曝光，直接在抗蚀剂膜上方的膜上，并且将抗蚀剂膜正下方的另一个膜制成绝缘体，施加带电的束曝光将抗蚀膜直接在抗蚀剂膜上方的膜和抗蚀剂膜正下方的另一个膜导电到抗蚀剂膜上，并且使抗蚀剂膜显影以形成抗蚀剂图案。

4. 发明授权

US06569595B1 Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06569595B1
公开(公告)日：2003-05-27
申请号：US09512286
申请日：2000-02-24
申请人： Yasuhiko Sato , Eishi Shiobara , Yasunobu Onishi , Shuji Hayase , Yoshihiko Nakano
发明人： Yasuhiko Sato , Eishi Shiobara , Yasunobu Onishi , Shuji Hayase , Yoshihiko Nakano
IPC分类号： G03F700
CPC分类号： G03F7/091
摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.
摘要翻译：一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子，氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。

5. 发明授权

US5985513A Photosensitive composition comprising aryl-substituted polysilane and peroxide-substituted benzophenone 失效
标题翻译：包含芳基取代的聚硅烷和过氧化物取代的二苯甲酮的光敏组合物
公开(公告)号：US5985513A
公开(公告)日：1999-11-16
申请号：US865067
申请日：1997-05-29
申请人： Rikako Kani , Yoshihiko Nakano , Shuji Hayase
发明人： Rikako Kani , Yoshihiko Nakano , Shuji Hayase
IPC分类号： C08K5/14 , G03F7/075 , G03C1/73
CPC分类号： G03F7/0757 , C08K5/14 , G03F7/0754
摘要： The present invention relates to a photosensitive composition comprising a polysilane having a repeating unit represented by the following general formula (1) and a benzophenone type compound having an organic peroxide, ##STR1## wherein Ar represents a substituted or unsubstituted aryl group.
摘要翻译：本发明涉及一种光敏组合物，其包含具有由以下通式（1）表示的重复单元的聚硅烷和具有有机过氧化物的二苯甲酮型化合物，其中Ar表示取代或未取代的芳基。

6. 发明授权

US6004730A Method of forming an insulating film pattern and photosensitive composition 失效
标题翻译：形成绝缘膜图案和光敏组合物的方法
公开(公告)号：US6004730A
公开(公告)日：1999-12-21
申请号：US921613
申请日：1997-09-02
申请人： Satoshi Mikoshiba , Yoshihiko Nakano , Rikako Kani , Shuji Hayase
发明人： Satoshi Mikoshiba , Yoshihiko Nakano , Rikako Kani , Shuji Hayase
IPC分类号： C08G77/48 , C08G77/62 , C08L83/04 , C08L83/16 , G03F7/075 , H01L21/027 , H01L21/312 , G03F7/26
CPC分类号： G03F7/0757
摘要： There is proposed a method of forming an insulating film pattern, which enables an insulating pattern of high precision and low dielectric constant to be easily obtained by means of an alkali development with basic solution. This method comprises the steps of coating a photosensitive composition comprising a first silicone polymer having a specific monomer and a second silicone polymer having a specific monomer on a substrate thereby to form a film of photosensitive composition, selectively exposing the film of photosensitive composition, alkali-developing the exposed film to form a pattern, and heat-treating the pattern of the photosensitive composition film.
摘要翻译：提出了一种形成绝缘膜图案的方法，其能够通过碱性溶液的碱显影容易地获得高精度和低介电常数的绝缘图案。该方法包括以下步骤：将包含具有特定单体的第一硅氧烷聚合物和具有特定单体的第二硅氧烷聚合物的光敏组合物涂布在基材上，从而形成感光组合物的膜，选择性地曝光感光组合物的膜，将曝光的膜显影以形成图案，并对感光性组合物膜的图案进行热处理。

7. 发明授权

US5362559A Polysilane monomolecular film and polysilane built-up film 失效
标题翻译：聚硅烷单分子膜和聚硅烷成膜
公开(公告)号：US5362559A
公开(公告)日：1994-11-08
申请号：US89634
申请日：1993-07-12
申请人： Shuji Hayase , Yoshihiko Nakano , Yukihiro Mikogami , Akira Yoshizumi , Shinji Murai , Rikako Kani
发明人： Shuji Hayase , Yoshihiko Nakano , Yukihiro Mikogami , Akira Yoshizumi , Shinji Murai , Rikako Kani
IPC分类号： B05D1/20 , C09D183/16 , B32B5/00
CPC分类号： B82Y30/00 , B05D1/202 , B82Y40/00 , C09D183/16 , Y10T428/261
摘要： Disclosed are a polysilane monomolecular film and a polysilane built-up film formed by building up a plurality of said monomolecular films, said monomolecular film consisting of a polysilane having a repeating unit represented by general formula (1) given below: ##STR1## where, R.sup.1 represents a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, R.sup.2 represents a divalent hydrocarbon group having 1 to 4 carbon atoms which can be substituted, and X represents hydroxyl group, amino group, carboxyl group, or a hydrophilic group having at least one selected from the group consisting of hydroxyl group, amino group, carboxyl group, amide linkage, ester linkage, carbamate linkage and carbonate linkage. The polysilane monomolecular film and built-up film can be formed on a substrate by an LB technique. In the films, the molecules of the polysilane having the repeating unit (1), that is, the Si-Si backbones are oriented in a fixed direction.
摘要翻译：公开了一种聚硅烷单分子膜和聚硅烷叠层膜，其通过构建多个所述单分子膜而形成，所述单分子膜由具有由以下给出的通式（1）表示的重复单元的聚硅烷组成：＆lt; IMAGE＆gt;（1 ）其中，R1表示取代或未取代的碳原子数1〜24的烷基或碳原子数6〜24的取代或未取代的芳基，R2表示可被取代的碳原子数1〜4的二价烃基，X 表示羟基，氨基，羧基或具有选自羟基，氨基，羧基，酰胺键，酯键，氨基甲酸酯键和碳酸酯键中的至少一种的亲水基团。可以通过LB技术在基板上形成聚硅烷单分子膜和积层膜。在膜中，具有重复单元（1）的聚硅烷的分子，即Si-Si主链在固定方向上取向。

8. 发明授权

US5198520A Polysilanes, polysiloxanes and silicone resist materials containing these compounds 失效
标题翻译：含有这些化合物的聚硅烷，聚硅氧烷和硅氧烷抗蚀材料
公开(公告)号：US5198520A
公开(公告)日：1993-03-30
申请号：US673185
申请日：1991-03-21
申请人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
发明人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
IPC分类号： C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , C08L83/16 , G03F7/075
CPC分类号： G03F7/0754 , C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , C08L83/16 , G03F7/0757
摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
摘要翻译：本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂，代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。作为具有这种光敏性的物质，可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。因此，本发明的有机硅抗蚀剂材料，特别是第二和第三有机硅抗蚀剂材料是碱显影的，并且还具有优异的耐氧等离子体性。因此，它们可以用作双层抗蚀剂系统中的顶层膜，使得可以形成非常精细的抗蚀剂图案，并且具有最少数量的加工步骤。

9. 发明授权

US5017453A A silicone resist materials containing a polysiloxane and a photo-sensitive agent 失效
标题翻译：含有聚硅氧烷和光敏剂的硅氧烷抗蚀剂材料
公开(公告)号：US5017453A
公开(公告)日：1991-05-21
申请号：US304231
申请日：1989-01-31
申请人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
发明人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
IPC分类号： C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , C08L83/16 , G03F7/075
CPC分类号： C08L83/16 , C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , G03F7/0754 , G03F7/0757
摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrogenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

10. 发明授权

US4822716A Polysilanes, Polysiloxanes and silicone resist materials containing these compounds 失效
标题翻译：聚硅烷，聚硅氧烷和含有这些化合物的硅氧烷抗蚀材料
公开(公告)号：US4822716A
公开(公告)日：1989-04-18
申请号：US938874
申请日：1986-12-08
申请人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
发明人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
IPC分类号： C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , C08L83/16 , G03F7/075 , G03C1/52
CPC分类号： C08L83/16 , C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , G03F7/0754 , G03F7/0757
摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
摘要翻译：本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂，代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。作为具有这种光敏性的物质，可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。因此，本发明的有机硅抗蚀剂材料，特别是第二和第三有机硅抗蚀剂材料是碱显影的，并且还具有优异的耐氧等离子体性。因此，它们可以用作双层抗蚀剂系统中的顶层膜，使得可以形成非常精细的抗蚀剂图案，并且具有最少数量的加工步骤。

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