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1. 发明授权

US4822716A Polysilanes, Polysiloxanes and silicone resist materials containing these compounds 失效
标题翻译：聚硅烷，聚硅氧烷和含有这些化合物的硅氧烷抗蚀材料
公开(公告)号：US4822716A
公开(公告)日：1989-04-18
申请号：US938874
申请日：1986-12-08
申请人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
发明人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
IPC分类号： C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , C08L83/16 , G03F7/075 , G03C1/52
CPC分类号： C08L83/16 , C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , G03F7/0754 , G03F7/0757
摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
摘要翻译：本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂，代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。作为具有这种光敏性的物质，可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。因此，本发明的有机硅抗蚀剂材料，特别是第二和第三有机硅抗蚀剂材料是碱显影的，并且还具有优异的耐氧等离子体性。因此，它们可以用作双层抗蚀剂系统中的顶层膜，使得可以形成非常精细的抗蚀剂图案，并且具有最少数量的加工步骤。

2. 发明授权

US5198520A Polysilanes, polysiloxanes and silicone resist materials containing these compounds 失效
标题翻译：含有这些化合物的聚硅烷，聚硅氧烷和硅氧烷抗蚀材料
公开(公告)号：US5198520A
公开(公告)日：1993-03-30
申请号：US673185
申请日：1991-03-21
申请人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
发明人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
IPC分类号： C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , C08L83/16 , G03F7/075
CPC分类号： G03F7/0754 , C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , C08L83/16 , G03F7/0757
摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
摘要翻译：本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂，代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。作为具有这种光敏性的物质，可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。因此，本发明的有机硅抗蚀剂材料，特别是第二和第三有机硅抗蚀剂材料是碱显影的，并且还具有优异的耐氧等离子体性。因此，它们可以用作双层抗蚀剂系统中的顶层膜，使得可以形成非常精细的抗蚀剂图案，并且具有最少数量的加工步骤。

3. 发明授权

US5017453A A silicone resist materials containing a polysiloxane and a photo-sensitive agent 失效
标题翻译：含有聚硅氧烷和光敏剂的硅氧烷抗蚀剂材料
公开(公告)号：US5017453A
公开(公告)日：1991-05-21
申请号：US304231
申请日：1989-01-31
申请人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
发明人： Yasunobu Onishi , Shuji Hayase , Rumiko Horiguchi , Akiko Hirao
IPC分类号： C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , C08L83/16 , G03F7/075
CPC分类号： C08L83/16 , C08G77/14 , C08G77/26 , C08G77/48 , C08G77/60 , G03F7/0754 , G03F7/0757
摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrogenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

4. 发明授权

US4988601A Photosensitive resin composition with o-quinone diazide and novolac resins prepared from mixed phenolic reactants to include 3,5-xylenol and 2,5-xylenol 失效
标题翻译：由混合酚类反应物制备的邻醌二叠氮和酚醛清漆树脂的感光树脂组合物包括3,5-二甲苯酚和2,5-二甲苯酚
公开(公告)号：US4988601A
公开(公告)日：1991-01-29
申请号：US275967
申请日：1988-11-25
申请人： Toru Ushirogouchi , Shuji Hayase , Yasunobu Onishi , Rumiko Horiguchi
发明人： Toru Ushirogouchi , Shuji Hayase , Yasunobu Onishi , Rumiko Horiguchi
IPC分类号： G03F7/021 , G03F7/023 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0236
摘要： A photosensitive resin composition having high heat resistance, sensitivity, and resolution performance, including a novolak resin prepared by condensing 2,5-xylenol with m-cresol and/or p-cresol using a carbonyl compound, a novolak resin prepared by condensing 3,5-xylenol with m-cresol and/or p-cresol, and a photosensitive reagent. In addition, four other types of photosensitive resin compositions are disclosed.
摘要翻译：包括通过使用羰基化合物将2,5-二甲苯酚与间甲酚和/或对甲酚进行缩合制备的酚醛清漆树脂，通过冷凝3制备的酚醛清漆树脂，具有高耐热性，灵敏度和分辨性能的光敏树脂组合物， 5-二甲苯酚与间甲酚和/或对甲酚，以及感光试剂。此外，还公开了四种其它类型的感光性树脂组合物。

5. 发明授权

US4871646A Polysilane compound and photosensitive composition 失效
标题翻译：聚硅烷化合物和感光组合物
公开(公告)号：US4871646A
公开(公告)日：1989-10-03
申请号：US193688
申请日：1988-05-13
申请人： Shizu Hayase , Rumiko Horiguchi , Yasunobu Onishi , Toru Ushirogouchi
发明人： Shizu Hayase , Rumiko Horiguchi , Yasunobu Onishi , Toru Ushirogouchi
IPC分类号： G03C1/72 , C08G77/00 , C08G77/02 , C08G77/48 , C08G77/60 , C08L83/16 , G03C1/00 , G03C1/675 , G03F7/039 , G03F7/075 , G03F7/11 , H01L21/027 , H01L21/30
CPC分类号： C08G77/60 , C08L83/16 , G03F7/0754
摘要： Disclosed are a polysilane containing a unit represented by the following formulas I, II, or III, and a photosensitive composition consisting of the polysilane. ##STR1##
摘要翻译：公开了含有由下式I，II或III表示的单元的聚硅烷和由聚硅烷组成的感光组合物。 III。影像> I II III

6. 发明授权

US5063134A Photosensitive composition 失效
标题翻译：感光组合物
公开(公告)号：US5063134A
公开(公告)日：1991-11-05
申请号：US455783
申请日：1990-01-02
申请人： Rumiko Horiguchi , Shuzi Hayase , Yasunobu Onishi
发明人： Rumiko Horiguchi , Shuzi Hayase , Yasunobu Onishi
IPC分类号： C08G8/06 , C08G8/28 , C09D161/04 , G03F7/075
CPC分类号： G03F7/0758 , C08G8/06 , C08G8/28 , C09D161/04
摘要： A photosensitive composition contains a polymer having a unit represented by formula I, and a photosensitive agent: ##STR1## wherein each of R.sub.1 to R.sub.4 represents a hydrogen atom, an alkyl group, an alkoxyl group, or a substituted or non-substituted allyl group, at least one of R.sub.1 to R.sub.4 being an alkyl groups having 1 to 10 carbon atoms and containing silicon, l represents a positive integer, and each of a and b represents an integer from 1 to 3, and c represents an integer from 0 to 2, a+b+c not exceeding 4.
摘要翻译：感光性组合物含有具有式I表示的单元的聚合物和光敏剂：其中R 1〜R 4各自表示氢原子，烷基，烷氧基或取代或未取代的光敏剂，取代的烯丙基，R 1至R 4中的至少一个为具有1至10个碳原子且含有硅的烷基，l表示正整数，a和b各自表示1至3的整数，c表示整数从0到2，a + b + c不超过4。

7. 发明授权

US4828958A Photosensitive composition and method of forming a resist pattern with copolymer of polyvinyl phenol 失效
标题翻译：用聚乙烯基苯酚共聚物形成抗蚀剂图案的光敏组合物和方法
公开(公告)号：US4828958A
公开(公告)日：1989-05-09
申请号：US23261
申请日：1987-03-09
申请人： Shuzi Hayase , Yasunobu Onishi , Rumiko Horiguchi
发明人： Shuzi Hayase , Yasunobu Onishi , Rumiko Horiguchi
IPC分类号： G03C1/00 , G03C1/72 , G03F7/00 , G03F7/012 , G03F7/021 , G03F7/023 , G03F7/032 , G03F7/038
CPC分类号： G03F7/0388 , G03F7/0125 , G03F7/021 , G03F7/0233 , G03F7/038
摘要： The photosensitive composite of the present invention is obtained by including a nonsubstitutional or substitutional benzyl radical in the phenol side chain of polyvinylphenol. The photosensitive composites have not only excellent heat resistivity, RIE resistivity, and resolving power but also have a wide tolerance for the variations in the development temperature and developer concentration at the time of development. Therefore, it is possible to obtain resist patterns with fine structure.
摘要翻译：本发明的感光性复合体通过在聚苯乙烯的苯酚侧链中含有非本体取代的苄基而获得。感光复合材料不仅具有优异的耐热性，RIE电阻率和分辨能力，而且对显影时的显影温度和显影剂浓度的变化具有宽的耐受性。因此，可以获得具有精细结构的抗蚀剂图案。

8. 发明授权

US06270948B1 Method of forming pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06270948B1
公开(公告)日：2001-08-07
申请号：US09327223
申请日：1999-06-07
申请人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
发明人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
IPC分类号： G03F700
CPC分类号： G03F7/094 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3121
摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.
摘要翻译：一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案和碘。采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

9. 发明授权

US06569595B1 Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06569595B1
公开(公告)日：2003-05-27
申请号：US09512286
申请日：2000-02-24
申请人： Yasuhiko Sato , Eishi Shiobara , Yasunobu Onishi , Shuji Hayase , Yoshihiko Nakano
发明人： Yasuhiko Sato , Eishi Shiobara , Yasunobu Onishi , Shuji Hayase , Yoshihiko Nakano
IPC分类号： G03F700
CPC分类号： G03F7/091
摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.
摘要翻译：一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子，氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。

10. 发明授权

US6025117A Method of forming a pattern using polysilane 失效
标题翻译：使用聚硅烷形成图案的方法
公开(公告)号：US6025117A
公开(公告)日：2000-02-15
申请号：US986517
申请日：1997-12-08
申请人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
发明人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
IPC分类号： C08G77/60 , C08G83/00 , G03F7/075 , G03F7/09 , G03F7/00
CPC分类号： C08G83/003 , C08G77/60 , G03F7/0754 , G03F7/091
摘要： A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.
摘要翻译：具有由以下通式表示的重复单元的聚硅烷（LPS-I），其中A是二价有机基团，R 1取代基可以相同或不同，并且选自氢原子和取代或未取代的烃基和甲硅烷基。聚硅烷在有机溶剂中的共溶剂性优异，可以通过涂布法形成膜，机械强度和耐热性优异。在半导体器件的制造方法中，可以将聚硅烷用作蚀刻掩模以设置在抗蚀剂下。聚硅烷在曝光期间表现出抗反射效果，相对于抗蚀剂具有大的蚀刻速率比和优异的耐干蚀刻性。

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