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1. 发明授权

US5362559A Polysilane monomolecular film and polysilane built-up film 失效
标题翻译：聚硅烷单分子膜和聚硅烷成膜
公开(公告)号：US5362559A
公开(公告)日：1994-11-08
申请号：US89634
申请日：1993-07-12
申请人： Shuji Hayase , Yoshihiko Nakano , Yukihiro Mikogami , Akira Yoshizumi , Shinji Murai , Rikako Kani
发明人： Shuji Hayase , Yoshihiko Nakano , Yukihiro Mikogami , Akira Yoshizumi , Shinji Murai , Rikako Kani
IPC分类号： B05D1/20 , C09D183/16 , B32B5/00
CPC分类号： B82Y30/00 , B05D1/202 , B82Y40/00 , C09D183/16 , Y10T428/261
摘要： Disclosed are a polysilane monomolecular film and a polysilane built-up film formed by building up a plurality of said monomolecular films, said monomolecular film consisting of a polysilane having a repeating unit represented by general formula (1) given below: ##STR1## where, R.sup.1 represents a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, R.sup.2 represents a divalent hydrocarbon group having 1 to 4 carbon atoms which can be substituted, and X represents hydroxyl group, amino group, carboxyl group, or a hydrophilic group having at least one selected from the group consisting of hydroxyl group, amino group, carboxyl group, amide linkage, ester linkage, carbamate linkage and carbonate linkage. The polysilane monomolecular film and built-up film can be formed on a substrate by an LB technique. In the films, the molecules of the polysilane having the repeating unit (1), that is, the Si-Si backbones are oriented in a fixed direction.
摘要翻译：公开了一种聚硅烷单分子膜和聚硅烷叠层膜，其通过构建多个所述单分子膜而形成，所述单分子膜由具有由以下给出的通式（1）表示的重复单元的聚硅烷组成：＆lt; IMAGE＆gt;（1 ）其中，R1表示取代或未取代的碳原子数1〜24的烷基或碳原子数6〜24的取代或未取代的芳基，R2表示可被取代的碳原子数1〜4的二价烃基，X 表示羟基，氨基，羧基或具有选自羟基，氨基，羧基，酰胺键，酯键，氨基甲酸酯键和碳酸酯键中的至少一种的亲水基团。可以通过LB技术在基板上形成聚硅烷单分子膜和积层膜。在膜中，具有重复单元（1）的聚硅烷的分子，即Si-Si主链在固定方向上取向。

2. 发明授权

US6025117A Method of forming a pattern using polysilane 失效
标题翻译：使用聚硅烷形成图案的方法
公开(公告)号：US6025117A
公开(公告)日：2000-02-15
申请号：US986517
申请日：1997-12-08
申请人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
发明人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
IPC分类号： C08G77/60 , C08G83/00 , G03F7/075 , G03F7/09 , G03F7/00
CPC分类号： C08G83/003 , C08G77/60 , G03F7/0754 , G03F7/091
摘要： A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.
摘要翻译：具有由以下通式表示的重复单元的聚硅烷（LPS-I），其中A是二价有机基团，R 1取代基可以相同或不同，并且选自氢原子和取代或未取代的烃基和甲硅烷基。聚硅烷在有机溶剂中的共溶剂性优异，可以通过涂布法形成膜，机械强度和耐热性优异。在半导体器件的制造方法中，可以将聚硅烷用作蚀刻掩模以设置在抗蚀剂下。聚硅烷在曝光期间表现出抗反射效果，相对于抗蚀剂具有大的蚀刻速率比和优异的耐干蚀刻性。

3. 发明授权

US5994007A Pattern forming method utilizing first insulative and then conductive overlayer and underlayer 失效
标题翻译：使用第一绝缘导电覆层和底层的图案形成方法
公开(公告)号：US5994007A
公开(公告)日：1999-11-30
申请号：US213373
申请日：1998-12-17
申请人： Yasuhiko Sato , Atsushi Ando , Yasunobu Onishi , Yoshihiko Nakano , Shuji Hayase , Rikako Kani
发明人： Yasuhiko Sato , Atsushi Ando , Yasunobu Onishi , Yoshihiko Nakano , Shuji Hayase , Rikako Kani
IPC分类号： G03F7/09 , G03F7/20 , G03F9/00
CPC分类号： G03F7/203 , G03F7/091 , G03F7/093 , Y10S430/143
摘要： Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.
摘要翻译：公开了一种图案形成方法，包括以下步骤：提供抗蚀剂膜，对抗蚀剂膜施加曝光，直接在抗蚀剂膜上方的膜上，并且将抗蚀剂膜正下方的另一个膜制成绝缘体，施加带电的束曝光将抗蚀膜直接在抗蚀剂膜上方的膜和抗蚀剂膜正下方的另一个膜导电到抗蚀剂膜上，并且使抗蚀剂膜显影以形成抗蚀剂图案。

4. 发明授权

US5985513A Photosensitive composition comprising aryl-substituted polysilane and peroxide-substituted benzophenone 失效
标题翻译：包含芳基取代的聚硅烷和过氧化物取代的二苯甲酮的光敏组合物
公开(公告)号：US5985513A
公开(公告)日：1999-11-16
申请号：US865067
申请日：1997-05-29
申请人： Rikako Kani , Yoshihiko Nakano , Shuji Hayase
发明人： Rikako Kani , Yoshihiko Nakano , Shuji Hayase
IPC分类号： C08K5/14 , G03F7/075 , G03C1/73
CPC分类号： G03F7/0757 , C08K5/14 , G03F7/0754
摘要： The present invention relates to a photosensitive composition comprising a polysilane having a repeating unit represented by the following general formula (1) and a benzophenone type compound having an organic peroxide, ##STR1## wherein Ar represents a substituted or unsubstituted aryl group.
摘要翻译：本发明涉及一种光敏组合物，其包含具有由以下通式（1）表示的重复单元的聚硅烷和具有有机过氧化物的二苯甲酮型化合物，其中Ar表示取代或未取代的芳基。

5. 发明授权

US6004730A Method of forming an insulating film pattern and photosensitive composition 失效
标题翻译：形成绝缘膜图案和光敏组合物的方法
公开(公告)号：US6004730A
公开(公告)日：1999-12-21
申请号：US921613
申请日：1997-09-02
申请人： Satoshi Mikoshiba , Yoshihiko Nakano , Rikako Kani , Shuji Hayase
发明人： Satoshi Mikoshiba , Yoshihiko Nakano , Rikako Kani , Shuji Hayase
IPC分类号： C08G77/48 , C08G77/62 , C08L83/04 , C08L83/16 , G03F7/075 , H01L21/027 , H01L21/312 , G03F7/26
CPC分类号： G03F7/0757
摘要： There is proposed a method of forming an insulating film pattern, which enables an insulating pattern of high precision and low dielectric constant to be easily obtained by means of an alkali development with basic solution. This method comprises the steps of coating a photosensitive composition comprising a first silicone polymer having a specific monomer and a second silicone polymer having a specific monomer on a substrate thereby to form a film of photosensitive composition, selectively exposing the film of photosensitive composition, alkali-developing the exposed film to form a pattern, and heat-treating the pattern of the photosensitive composition film.
摘要翻译：提出了一种形成绝缘膜图案的方法，其能够通过碱性溶液的碱显影容易地获得高精度和低介电常数的绝缘图案。该方法包括以下步骤：将包含具有特定单体的第一硅氧烷聚合物和具有特定单体的第二硅氧烷聚合物的光敏组合物涂布在基材上，从而形成感光组合物的膜，选择性地曝光感光组合物的膜，将曝光的膜显影以形成图案，并对感光性组合物膜的图案进行热处理。

6. 发明授权

US06270948B1 Method of forming pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06270948B1
公开(公告)日：2001-08-07
申请号：US09327223
申请日：1999-06-07
申请人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
发明人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
IPC分类号： G03F700
CPC分类号： G03F7/094 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3121
摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.
摘要翻译：一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案和碘。采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

7. 发明授权

US5372908A Photosensitive composition comprising a polysilane and an acid forming compound 失效
标题翻译：包含聚硅烷和形成酸的化合物的光敏组合物
公开(公告)号：US5372908A
公开(公告)日：1994-12-13
申请号：US910407
申请日：1992-07-08
申请人： Shuji Hayase , Yoshihiko Nakano , Yukihiro Mikogami
发明人： Shuji Hayase , Yoshihiko Nakano , Yukihiro Mikogami
IPC分类号： C08L83/16 , G03F7/039 , G03F7/075 , G03F7/023 , G03F7/004
CPC分类号： G03F7/0754 , C08L83/16 , G03F7/039 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/127
摘要： A photosensitive composition comprises a polysilane having a repeating unit represented by formula (1) and a compound which generates an acid upon exposure to light: ##STR1## wherein each of R.sup.1 and R.sup.2 independently represents a hydrogen atom, a substituted or nonsubstituted alkyl group having 1 to 18 carbon atoms, a substituted or nonsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or nonsubstituted aralkyl group having 7 to 22 carbon atoms. This photosensitive composition exhibits a high-sensitivity, and can be formed into a polysilane film pattern having a high-resolution, when it is subjected to exposure to Deep UV light, an EB, an X-ray, or the like, hard baking, and development under appropriate conditions. When an aromatic ring substituted by a hydroxyl group, a substituted or nonsubstituted alkoxyl group, or a substituted or nonsubstituted siloxyl group is introduced in one of side chains R.sup.1 and R.sup.2 of the polysilane, development using an alkaline solution can be employed.
摘要翻译：光敏组合物包含具有由式（1）表示的重复单元的聚硅烷和在暴露于光时产生酸的化合物：其中R1和R2各自独立地表示氢原子，取代或未取代的具有1至18个碳原子的烷基，具有6至18个碳原子的取代或未取代的芳基，或具有7至22个碳原子的取代或未取代的芳烷基。该感光性组合物显示出高灵敏度，并且当其经受深紫外光，EB，X射线等的暴露时，可以形成具有高分辨率的聚硅烷膜图案，硬烘烤，并在适当条件下开发。当被羟基取代的芳环，取代或未取代的烷氧基或取代或未取代的甲硅烷氧基被引入聚硅烷的侧链R1和R2之一时，可以使用碱性溶液的显影。

8. 发明授权

US5773192A Organic silicon compound, resist, thermal polymerization composition and photopolymerization composition 失效
标题翻译：有机硅化合物，抗蚀剂，热聚合组合物和光聚合组合物
公开(公告)号：US5773192A
公开(公告)日：1998-06-30
申请号：US794587
申请日：1997-02-03
申请人： Shinji Murai , Yoshihiko Nakano , Ken Uchida , Shuji Hayase
发明人： Shinji Murai , Yoshihiko Nakano , Ken Uchida , Shuji Hayase
IPC分类号： B41M5/36 , C07F7/08 , C08F4/00 , C08G77/48 , C08G77/60 , C08L83/02 , C08L83/16 , G03F7/004 , G03F7/027 , G03F7/029 , G03F7/075 , G03F7/023 , G08G77/00
CPC分类号： G03F7/027 , B41M5/368 , C07F7/0821 , C08G77/60 , G03F7/0045 , G03F7/029 , G03F7/075 , G03F7/0757
摘要： Disclosed are an organic silicon compound having a repeating unit represented by general formula (I) shown below, a resist, a thermal polymerization composition and a photopolymerization composition containing the organic silicon compound, ##STR1## wherein R.sup.1 is a t-butyl group or a pyranyl group, R.sup.2 is an hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 1 to 24 carbon atoms, or a substituted or unsubstituted aralkyl having 7 to 24 carbon atoms, R.sup.3 is a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 24 carbon atoms or an alkoxyl group, and k represents an integer from 0 to 4.
摘要翻译：公开了具有下述通式（I）表示的重复单元的有机硅化合物，抗蚀剂，热聚合组合物和含有有机硅化合物的光聚合组合物，其中，R 2表示氢原子，取代基或未取代的碳原子数1〜24的烷基，取代或未取代的碳原子数为1〜24的芳基或取代或未取代的碳原子数为7〜24的芳烷基，R3为取代或未取代的碳原子数为1〜24的烷基取代或未取代的碳原子数为6〜24的芳基，取代或未取代的碳原子数为7〜24的芳烷基或烷氧基，k表示0〜4的整数。

9. 发明授权

US5624788A Organic silicon compound, resist thermal polymerization composition and photopolymerization composition 失效
标题翻译：有机硅化合物，抗热聚合组合物和光聚合组合物
公开(公告)号：US5624788A
公开(公告)日：1997-04-29
申请号：US490614
申请日：1995-06-15
申请人： Shinji Murai , Yoshihiko Nakano , Ken Uchida , Shuji Hayase
发明人： Shinji Murai , Yoshihiko Nakano , Ken Uchida , Shuji Hayase
IPC分类号： B41M5/36 , C07F7/08 , C08F4/00 , C08G77/48 , C08G77/60 , C08L83/02 , C08L83/16 , G03F7/004 , G03F7/027 , G03F7/029 , G03F7/075 , G03F7/023 , G08G77/00
CPC分类号： G03F7/027 , B41M5/368 , C07F7/0821 , C08G77/60 , G03F7/0045 , G03F7/029 , G03F7/075 , G03F7/0757
摘要： Disclosed are an organic silicon compound having a repeating unit represented by general formula (I) shown below, a resist, a thermal polymerization composition and a photopolymerization composition containing the organic silicon compound, ##STR1## wherein R.sup.1 is a t-butyl group or a tetrahydropyranyl group, R.sup.2 is an hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 1 to 24 carbon atoms, or a substituted or unsubstituted aralkyl having 7 to 24 carbon atoms, R.sup.3 is a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 24 carbon atoms or an alkoxyl group, and k represents an integer from 0 to 4.
摘要翻译：公开了具有下述通式（I）表示的重复单元的有机硅化合物，抗蚀剂，热聚合组合物和含有有机硅化合物的光聚合组合物，R 2是氢原子，取代或未取代的碳原子数为1〜24的烷基，取代或未取代的碳原子数为1〜24的芳基或取代或未取代的碳原子数为7〜24的芳烷基，R3为取代或未取代的烷基，碳原子，取代或未取代的碳原子数为6〜24的芳基，取代或未取代的碳原子数为7〜24的芳烷基或烷氧基，k表示0〜4的整数。

10. 发明授权

US07126054B2 Raw material kit for electrolytic composition, electrolytic composition, and dye-sensitized solar cell 有权
标题翻译：电解组合物原料试剂盒，电解组合物和染料敏化太阳能电池
公开(公告)号：US07126054B2
公开(公告)日：2006-10-24
申请号：US10180018
申请日：2002-06-27
申请人： Shinji Murai , Hiroyasu Sumino , Satoshi Mikoshiba , Shuji Hayase
发明人： Shinji Murai , Hiroyasu Sumino , Satoshi Mikoshiba , Shuji Hayase
IPC分类号： H01L31/04
CPC分类号： H01G9/2031 , H01G9/2009 , Y02E10/542
摘要： Disclosed is a dye-sensitized solar cell comprising a gel electrolyte that contains a gelling agent and an electrolyte, wherein the gelling agent contains at least one kind of a polymer selected from the group consisting of a first polymer in which polysulfonic acid is crosslinked by a metal ion having a valency of not less than two, a second polymer in which polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two, a third polymer in which a quaternary ammonium salt of polysulfonic acid is crosslinked by a metal ion having a valency of not less than two and a fourth polymer in which a quaternary ammonium salt of polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two.
摘要翻译：公开了一种染料敏化太阳能电池，其包含凝胶电解质，其含有胶凝剂和电解质，其中，所述胶凝剂含有选自第一聚合物中的至少一种的聚合物，其中聚磺酸通过化合价不低于2的金属离子，多元羧酸通过不少于2价的金属离子交联的第二聚合物，其中多磺酸的季铵盐通过金属交联的第三种聚合物具有不小于2的化合价的离子和其中多元羧酸的季铵盐通过不少于2的化合价的金属离子交联的第四聚合物。

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