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    • 8. 发明专利
    • Pattern forming method
    • 图案形成方法
    • JPS6194041A
    • 1986-05-12
    • JP21664184
    • 1984-10-16
    • Matsushita Electric Ind Co Ltd
    • OGAWA KAZUFUMI
    • B05D1/18B05D1/20G03C1/00G03C1/72G03C1/74G03F7/075G03F7/09G03F7/16G03F7/26G03F7/38G11B23/087H01L21/027H01L21/30
    • B82Y30/00B05D1/185B05D1/202B82Y40/00G03F7/0757G03F7/165G03F7/265
    • PURPOSE:To obtain a resin pattern having a high definition and a high etching by forming a sensitive thin film on a substrate and by radiating an energy ray in a state of the pattern, thereby exciting or unexciting a sensitive radical and then reacting the residual sensitive radical with a chemical substance having an active group. CONSTITUTION:The sensitive thin film is formed by reacting a silane surface active agent such as CH2=CH-(CH2)n-Si.Cl3 with SiO2 substrate to form a siloxane binding. When an electron beam is radiated in the state of the pattern, a vinyl group positioned in a radiation part polymerizes to form the resin. While a vinyl group positioned in an unradiation part is treated with sodium hydroxide etc. to bind a hydroxyl group with the vinyl group followed by binding the hydroxyl group with the silane surface active agent. By repeating the above described reaction, the thin film having a desired thickness is formed. Since the thin film having a sensitivity against the energy ray is formed from a monomolecular cumulating film, the very fine pattern is formed.
    • 目的:通过在基板上形成敏感性薄膜,通过在图案状态下照射能量射线来获得具有高清晰度和高蚀刻性的树脂图案,从而激发或不敏感敏感基团,然后使残留敏感的 具有活性基团的化学物质。 构成:敏感薄膜是通过硅烷表面活性剂如CH 2 = CH-(CH 2)n -SiCl 3与SiO 2底物反应而形成的,以形成硅氧烷结合。 当以图案状态照射电子束时,位于辐射部分中的乙烯基聚合以形成树脂。 当位于未辐射部分的乙烯基团用氢氧化钠等处理以将羟基与乙烯基结合,然后将羟基与硅烷表面活性剂结合时。 通过重复上述反应,形成具有期望厚度的薄膜。 由于具有对能量射线的敏感性的薄膜由单分子累积膜形成,所以形成极细的图案。