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1. 发明授权

US09115308B2 Liquid crystal medium composition of liquid crystal display 有权
标题翻译：液晶介质组成液晶显示
公开(公告)号：US09115308B2
公开(公告)日：2015-08-25
申请号：US13698029
申请日：2012-08-03
申请人： Xinhui Zhong , Hongji Huang , Kuancheng Lee , Xiaolong Ma
发明人： Xinhui Zhong , Hongji Huang , Kuancheng Lee , Xiaolong Ma
IPC分类号： C09K19/54 , C09K19/30 , C09K19/12 , C09K19/06 , C09K19/32 , C09K19/04
CPC分类号： C09K19/54 , C09K19/062 , C09K19/322 , C09K2019/0448 , C09K2019/122 , C09K2019/3009
摘要： A liquid crystal medium composition of liquid crystal display includes: a negative liquid crystal material, reactive monomer, an initiator, and a stabilizer. The initiator functions to induce photo polymerization of the reactive monomer. The initiator has a molecular structure comprising aromatic rings, carbonyl groups connected to the aromatic rings, and substituted moieties connected to the aromatic rings. The initiator lowers the activation energy of chain initiation reaction of the polymerization of reactive monomer to allow the photo polymerization of the reactive monomer to take place in a wider wavelength range of 200-450 nm, so as to reduce the required intensity and luminance of ultraviolet light and to speed up the reaction of the reactive monomers and also to provide a uniform result of reaction, to reduce the destruction that the ultraviolet light causes on the material of alignment layer and the liquid crystal material, and to improve stability of the panel.
摘要翻译：液晶显示器的液晶介质组合物包括负极性液晶材料，反应性单体，引发剂和稳定剂。引发剂用于引发反应性单体的光聚合。引发剂具有包含芳族环，与芳环连接的羰基和与芳环连接的取代部分的分子结构。引发剂降低反应性单体聚合引发反应的活化能，使反应性单体的光聚合在较宽的波长范围内发生，从而降低紫外线的强度和亮度并且加速反应性单体的反应，并且还提供均匀的反应结果，以减少紫外光对取向层和液晶材料的材料的破坏，并提高面板的稳定性。

2. 发明申请

US20140021408A1 LIQUID CRYSTAL MEDIUM COMPOSITION OF LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器的液晶中间组成
公开(公告)号：US20140021408A1
公开(公告)日：2014-01-23
申请号：US13698029
申请日：2012-08-03
申请人： Xinhui Zhong , Hongji Huang , Kuancheng Lee , Xiaolong Ma
发明人： Xinhui Zhong , Hongji Huang , Kuancheng Lee , Xiaolong Ma
IPC分类号： C09K19/54
CPC分类号： C09K19/54 , C09K19/062 , C09K19/322 , C09K2019/0448 , C09K2019/122 , C09K2019/3009
摘要： A liquid crystal medium composition of liquid crystal display includes: a negative liquid crystal material, reactive monomer, an initiator, and a stabilizer. The initiator functions to induce photo polymerization of the reactive monomer. The initiator has a molecular structure comprising aromatic rings, carbonyl groups connected to the aromatic rings, and substituted moieties connected to the aromatic rings. The initiator lowers the activation energy of chain initiation reaction of the polymerization of reactive monomer to allow the photo polymerization of the reactive monomer to take place in a wider wavelength range of 200-450 nm, so as to reduce the required intensity and luminance of ultraviolet light and to speed up the reaction of the reactive monomers and also to provide a uniform result of reaction, to reduce the destruction that the ultraviolet light causes on the material of alignment layer and the liquid crystal material, and to improve stability of the panel.
摘要翻译：液晶显示器的液晶介质组合物包括负极性液晶材料，反应性单体，引发剂和稳定剂。引发剂用于引发反应性单体的光聚合。引发剂具有包含芳族环，与芳环连接的羰基和与芳环连接的取代部分的分子结构。引发剂降低反应性单体聚合引发反应的活化能，使反应性单体的光聚合在较宽的波长范围内发生，从而降低紫外线的强度和亮度并且加速反应性单体的反应，并且还提供均匀的反应结果，以减少紫外光对取向层和液晶材料的材料的破坏，并提高面板的稳定性。

3. 发明授权

US08889519B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08889519B2
公开(公告)日：2014-11-18
申请号：US13812499
申请日：2012-10-12
申请人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
发明人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
IPC分类号： H01L21/336 , H01L29/66 , H01L29/78 , H01L29/161 , H01L21/02 , H01L21/265 , H01L29/10 , H01L29/165 , H01L21/268 , H01L29/51
CPC分类号： H01L29/66477 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/02675 , H01L21/26506 , H01L21/268 , H01L29/1054 , H01L29/161 , H01L29/165 , H01L29/517 , H01L29/665 , H01L29/66575 , H01L29/66651 , H01L29/66659 , H01L29/78 , H01L29/7848
摘要： The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that at least one of the source and drain regions comprises a GeSn alloy. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn stressed source and drain regions with high concentration of Sn is formed by implanting precursors and performing a laser rapid annealing, thus the device carrier mobility of the channel region is effectively enhanced and the device drive capability is further improved.
摘要翻译：本发明公开了一种半导体器件，包括：衬底，衬底上的栅极堆叠结构，栅极堆叠结构两侧的衬底中的源极和漏极区域以及衬底中的源极和漏极区域之间的沟道区域其特征在于源区和漏区中的至少一个包括GeSn合金。根据本发明的半导体器件及其制造方法，通过注入前体并进行激光快速退火形成GeSn应力的高浓度Sn的源区和漏极区，因此沟道区的器件载流子迁移率为有效提高了设备驱动能力。

4. 发明申请

US20140197376A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20140197376A1
公开(公告)日：2014-07-17
申请号：US13812504
申请日：2012-10-12
申请人： Xiaolong Ma , Huaxiang Yin , Sen Xu , Huilong Zhu
发明人： Xiaolong Ma , Huaxiang Yin , Sen Xu , Huilong Zhu
IPC分类号： H01L29/775
CPC分类号： H01L29/775 , H01L29/161 , H01L29/165 , H01L29/517 , H01L29/518 , H01L29/66431 , H01L29/66545 , H01L29/7786
摘要： The present invention discloses a semiconductor device, which comprises a substrate, a buffer layer on the substrate, an inversely doped isolation layer on the buffer layer, a barrier layer on the inversely doped isolation layer, a channel layer on the barrier layer, a gate stack structure on the channel layer, and source and drain regions at both sides of the gate stack structure, characterized in that the buffer layer and/or the barrier layer and/or the inversely doped isolation layer are formed of SiGe alloys or SiGeSn alloys, and the channel layer is formed of a GeSn alloy. The semiconductor device according to the present invention uses a quantum well structure of SiGe/GeSn/SiGe to restrict transportation of carriers, and it introduces a stress through lattice mis-match to greatly increase the carrier mobility, thus improving the device driving capability so as to be adapted to high-speed and high-frequency application.
摘要翻译：本发明公开了一种半导体器件，其包括衬底，衬底上的缓冲层，缓冲层上的反掺杂隔离层，反掺杂隔离层上的阻挡层，阻挡层上的沟道层，栅极沟道层上的堆叠结构以及栅极堆叠结构两侧的源极和漏极区域，其特征在于缓冲层和/或势垒层和/或反向掺杂隔离层由SiGe合金或SiGeSn合金形成，并且沟道层由GeSn合金形成。根据本发明的半导体器件使用SiGe / GeSn / SiGe的量子阱结构来限制载流子的传输，并且通过晶格失配引入应力以大大增加载流子迁移率，从而提高器件驱动能力，从而适应高速高频应用。

5. 发明申请

US20130329151A1 LIQUID CRYSTAL PANEL, MANUFACTURING PROCESS AND DISPLAY DEVICE THEREOF 审中-公开
标题翻译：液晶面板，制造工艺及其显示装置
公开(公告)号：US20130329151A1
公开(公告)日：2013-12-12
申请号：US13636652
申请日：2012-06-28
申请人： Xiaolong Ma , Hong-Ji Huang
发明人： Xiaolong Ma , Hong-Ji Huang
IPC分类号： G02F1/1337 , G02F1/136 , H01J9/00
CPC分类号： G02F1/133711 , G02F1/134363 , G02F2001/133742 , G02F2001/13706
摘要： The present invention provides to a liquid crystal panel, which comprises: a first substrate, a second substrate, a coplanar transparent electrode layer and a liquid crystal layer. The first and second substrates have a first and second alignment films, respectively. The coplanar transparent electrode layer is disposed onto the second alignment film. The liquid crystal layer is disposed in a space between the first alignment film of the first substrate and the coplanar transparent electrode layer of the second substrate. The liquid crystal film comprises positive liquid crystal molecules and reactive mesogens (RMs). The liquid crystal panel of the present invention can overcome the problems of pollution and static electricity generated from the rubbing alignment in the IPS mode. In comparison with the PSVA mode, the present invention can simplify the manufacturing process and provide the advantages of high contrast, high response speed and wide viewing angle.
摘要翻译：本发明提供一种液晶面板，其包括：第一基板，第二基板，共面透明电极层和液晶层。第一和第二基板分别具有第一和第二取向膜。共面透明电极层设置在第二取向膜上。液晶层设置在第一基板的第一取向膜和第二基板的共面透明电极层之间的空间中。液晶膜包含正极性液晶分子和反应性介晶（RMs）。本发明的液晶面板可以克服在IPS模式下由摩擦对准产生的污染和静电的问题。与PSVA模式相比，本发明可以简化制造工艺，并提供高对比度，高响应速度和宽视角的优点。

6. 发明申请

US20130314656A1 Liquid Crystal Panel And Method Of Liquid Crystal Alignment 审中-公开
标题翻译：液晶面板及液晶对准方法
公开(公告)号：US20130314656A1
公开(公告)日：2013-11-28
申请号：US13521738
申请日：2012-05-30
申请人： Xiaolong Ma , Hong-Ji Huang
发明人： Xiaolong Ma , Hong-Ji Huang
IPC分类号： G02F1/1337
CPC分类号： G02F1/133788 , G02F1/133711 , G02F2001/133715 , G02F2001/133749
摘要： The present invention provides a method of liquid crystal (LC) alignment and LC panel, which includes: providing first substrate, forming first alignment film on surface of first substrate; providing second substrate, disposed oppositely to first substrate, and forming common electrodes, pixel electrodes disposed with separating space, and second alignment film covering common electrodes and pixel electrodes on surface of second substrate; filling LC composite between first alignment film and second alignment film, LC composite comprising reactive monomers and LC molecules; applying high frequency alternating electric field to common electrodes and pixel electrodes so that reactive monomers and LC molecules arranged perpendicular to high frequency alternating electric field with pretilt angle; continuing applying high frequency alternating electric field and using UV radiation to fix pretilt angle to perform alignment. The present invention does not use rubbing to perform alignment, and avoids pollution to LC panel.
摘要翻译：本发明提供一种液晶（LC）取向和LC面板的方法，包括：提供第一衬底，在第一衬底的表面上形成第一取向膜; 提供与第一衬底相对设置的第二衬底，以及形成公共电极，设置有分隔空间的像素电极，以及覆盖第二衬底表面上的公共电极和像素电极的第二取向膜; 在第一取向膜和第二取向膜之间填充LC复合物，包含反应性单体和LC分子的LC复合物; 将高频交变电场施加到公共电极和像素电极，使反应性单体和LC分子垂直于具有预倾角的高频交变电场排列; 继续施加高频交变电场并使用紫外线辐射来固定预倾角以进行对准。本发明不使用摩擦进行取向，避免了对LC面板的污染。

7. 发明申请

US20130221535A1 Diffusion Barrier Layer, Metal Interconnect Arrangement and Method of Manufacturing the Same 审中-公开
标题翻译：扩散阻挡层，金属互连布置及其制造方法
公开(公告)号：US20130221535A1
公开(公告)日：2013-08-29
申请号：US13517050
申请日：2012-02-29
申请人： Xiaolong Ma , Huaxiang Yin , Lichuan Zhao
发明人： Xiaolong Ma , Huaxiang Yin , Lichuan Zhao
IPC分类号： H01L23/48 , B32B9/00 , H01L21/768
CPC分类号： H01L23/528 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L23/53223 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/30 , H01L2924/00
摘要： A diffusion barrier layer, a metal interconnect arrangement and a method of manufacturing the same are disclosed. In one embodiment, the metal interconnect arrangement may comprise a conductive plug/interconnect wire for electrical connection, and a diffusion barrier layer provided on at least a portion of a surface of the conductive plug/interconnect wire. The diffusion barrier layer may comprise insulating amorphous carbon.
摘要翻译：公开了一种扩散阻挡层，金属互连装置及其制造方法。在一个实施例中，金属互连装置可以包括用于电连接的导电插头/互连线，以及设置在导电插头/互连线的表面的至少一部分上的扩散阻挡层。扩散阻挡层可以包括绝缘无定形碳。

8. 发明授权

US09281398B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US09281398B2
公开(公告)日：2016-03-08
申请号：US14355664
申请日：2012-07-03
申请人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
发明人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
IPC分类号： H01L21/336 , H01L29/78 , H01L29/66 , H01L29/10
CPC分类号： H01L29/7848 , H01L29/1037 , H01L29/1095 , H01L29/66636 , H01L29/7834
摘要： The present invention discloses a semiconductor device, which comprises a substrate, a gate stack structure on the substrate, a channel region in the substrate under the gate stack structure, and source and drain regions at both sides of the channel region, wherein there is a stressed layer under and at both sides of the channel region, in which the source and drain regions are formed. According to the semiconductor device and the method for manufacturing the same of the present invention, a stressed layer is formed at both sides of and under the channel region made of a silicon-based material so as to act on the channel region, thereby effectively increasing the carrier mobility of the channel region and improving the device performance.
摘要翻译：本发明公开了一种半导体器件，其包括衬底，衬底上的栅极堆叠结构，栅极堆叠结构下的衬底中的沟道区，以及沟道区两侧的源极和漏极区，其中存在在形成源极和漏极区的沟道区的下侧和两侧具有应力层。根据本发明的半导体器件及其制造方法，在由硅系材料制成的沟道区域的两侧和下方形成应力层，以作用于沟道区域，从而有效地增加通道区域的载波移动性和设备性能的提高。

9. 发明授权

US08796744B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08796744B1
公开(公告)日：2014-08-05
申请号：US13812504
申请日：2012-10-12
申请人： Xiaolong Ma , Huaxiang Yin , Sen Xu , Huilong Zhu
发明人： Xiaolong Ma , Huaxiang Yin , Sen Xu , Huilong Zhu
IPC分类号： H01L27/148 , H01L29/768 , H01L29/775
CPC分类号： H01L29/775 , H01L29/161 , H01L29/165 , H01L29/517 , H01L29/518 , H01L29/66431 , H01L29/66545 , H01L29/7786
摘要： The present invention discloses a semiconductor device, which comprises a substrate, a buffer layer on the substrate, an inversely doped isolation layer on the buffer layer, a barrier layer on the inversely doped isolation layer, a channel layer on the barrier layer, a gate stack structure on the channel layer, and source and drain regions at both sides of the gate stack structure, characterized in that the buffer layer and/or the barrier layer and/or the inversely doped isolation layer are formed of SiGe alloys or SiGeSn alloys, and the channel layer is formed of a GeSn alloy. The semiconductor device according to the present invention uses a quantum well structure of SiGe/GeSn/SiGe to restrict transportation of carriers, and it introduces a stress through lattice mis-match to greatly increase the carrier mobility, thus improving the device driving capability so as to be adapted to high-speed and high-frequency application.
摘要翻译：本发明公开了一种半导体器件，其包括衬底，衬底上的缓冲层，缓冲层上的反掺杂隔离层，反掺杂隔离层上的阻挡层，阻挡层上的沟道层，栅极沟道层上的堆叠结构以及栅极堆叠结构两侧的源极和漏极区域，其特征在于缓冲层和/或势垒层和/或反向掺杂隔离层由SiGe合金或SiGeSn合金形成，并且沟道层由GeSn合金形成。根据本发明的半导体器件使用SiGe / GeSn / SiGe的量子阱结构来限制载流子的传输，并且通过晶格失配引入应力以大大增加载流子迁移率，从而提高器件驱动能力，从而适应高速高频应用。

10. 发明申请

US20130335659A1 IN-PLANE-SWITCHING MODE LIQUID CRYSTAL PANEL, MANUFACTURING PROCESS AND DISPLAY DEVICE THEREOF 有权
标题翻译：平面切换模式液晶板，制造工艺及其显示装置
公开(公告)号：US20130335659A1
公开(公告)日：2013-12-19
申请号：US13638078
申请日：2012-06-28
申请人： Xiaolong Ma , Hong-Ji Huang
发明人： Xiaolong Ma , Hong-Ji Huang
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/1333 , G02F1/133711 , G02F2001/133726 , G02F2001/133765
摘要： The present invention provides to an in-plane-switching (IPS) mode liquid crystal panel, which comprises: a first substrate, a second substrate, a coplanar transparent electrode layer and a liquid crystal layer. The first and second substrates have a first alignment film and a second alignment film, respectively. The coplanar transparent electrode layer is disposed onto the second alignment film. The liquid crystal layer is disposed in a space between the first alignment film of the first substrate and the coplanar transparent electrode layer of the second substrate. The liquid crystal layer comprises dual-frequency liquid crystal molecules and dual-frequency reactive mesogens/monomers. The liquid crystal panel of the present invention can overcome the problems of pollution and static electricity generated from the rubbing alignment in the in-plane-switching (IPS) mode, so as to simplify the manufacturing process and provide the advantages of high contrast, high response speed and wide viewing angle.
摘要翻译：本发明提供一种面内切换（IPS）模式液晶面板，其包括：第一基板，第二基板，共面透明电极层和液晶层。第一基板和第二基板分别具有第一取向膜和第二取向膜。共面透明电极层设置在第二取向膜上。液晶层设置在第一基板的第一取向膜和第二基板的共面透明电极层之间的空间中。液晶层包括双频液晶分子和双频反应性介晶/单体。本发明的液晶面板可以克服在平面切换（IPS）模式中由摩擦取向产生的污染和静电的问题，从而简化制造过程，并提供高对比度，高响应速度和广视角。

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