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    • 4. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08796744B1
    • 2014-08-05
    • US13812504
    • 2012-10-12
    • Xiaolong MaHuaxiang YinSen XuHuilong Zhu
    • Xiaolong MaHuaxiang YinSen XuHuilong Zhu
    • H01L27/148H01L29/768H01L29/775
    • H01L29/775H01L29/161H01L29/165H01L29/517H01L29/518H01L29/66431H01L29/66545H01L29/7786
    • The present invention discloses a semiconductor device, which comprises a substrate, a buffer layer on the substrate, an inversely doped isolation layer on the buffer layer, a barrier layer on the inversely doped isolation layer, a channel layer on the barrier layer, a gate stack structure on the channel layer, and source and drain regions at both sides of the gate stack structure, characterized in that the buffer layer and/or the barrier layer and/or the inversely doped isolation layer are formed of SiGe alloys or SiGeSn alloys, and the channel layer is formed of a GeSn alloy. The semiconductor device according to the present invention uses a quantum well structure of SiGe/GeSn/SiGe to restrict transportation of carriers, and it introduces a stress through lattice mis-match to greatly increase the carrier mobility, thus improving the device driving capability so as to be adapted to high-speed and high-frequency application.
    • 本发明公开了一种半导体器件,其包括衬底,衬底上的缓冲层,缓冲层上的反掺杂隔离层,反掺杂隔离层上的阻挡层,阻挡层上的沟道层,栅极 沟道层上的堆叠结构以及栅极堆叠结构两侧的源极和漏极区域,其特征在于缓冲层和/或势垒层和/或反向掺杂隔离层由SiGe合金或SiGeSn合金形成, 并且沟道层由GeSn合金形成。 根据本发明的半导体器件使用SiGe / GeSn / SiGe的量子阱结构来限制载流子的传输,并且通过晶格失配引入应力以大大增加载流子迁移率,从而提高器件驱动能力,从而 适应高速高频应用。
    • 5. 发明申请
    • Detecting And Measuring Live Pathogens Utilizing A Mass Detection Device
    • 利用质量检测装置检测和测量活体病原体
    • US20090235746A1
    • 2009-09-24
    • US12361922
    • 2009-01-29
    • Rajakkannu MutharasanPeter A. NagySen Xu
    • Rajakkannu MutharasanPeter A. NagySen Xu
    • G01H13/00C12Q1/04G01N33/53
    • G01N33/56911
    • Extremely minute amounts of live pathogens are rapidly detected using a piezoelectric cantilever sensor. A single pathogen is detectable in about 30 minutes. Pathogen-specific antibodies are immobilized on the sensor surface. The sensor is exposed to a medium that potentially contains the target pathogen. When target pathogens are contained in the medium, both dead and live pathogen cells bind to the immobilized antibody on the sensor surface. The attached target pathogen cells are exposed to a pathogen discriminator capable of discriminating between live cells and dead cells by increasing the mass of live cells. Example pathogens include Escherichia coli, Listeri monocytogene, and Salmonella enteritidis. Example antibodies include those that bind to the pathogenic bacteria designated as ATCC 43251, ATCC 700375, and ATCC 31194. Example pathogen discriminators include intracellular pH indicating molecules.
    • 使用压电悬臂传感器快速检测极微量的活病原体。 在大约30分钟内可以检测到单个病原体。 病原体特异性抗体固定在传感器表面上。 传感器暴露于潜在含有目标病原体的介质中。 当目标病原体包含在培养基中时,死亡和活的病原体细胞均与传感器表面上的固定化抗体结合。 将附着的目标病原体细胞暴露于能够通过增加活细胞质量来区分活细胞和死细胞的病原体鉴别器。 示例性病原体包括大肠杆菌,单核细胞增多性李斯特菌和肠炎沙门氏菌。 示例性抗体包括结合命名为ATCC 43251,ATCC 700375和ATCC 31194的致病细菌的抗体。实例性病原体鉴别剂包括细胞内pH指示分子。
    • 8. 发明申请
    • Semiconductor Device
    • 半导体器件
    • US20140197376A1
    • 2014-07-17
    • US13812504
    • 2012-10-12
    • Xiaolong MaHuaxiang YinSen XuHuilong Zhu
    • Xiaolong MaHuaxiang YinSen XuHuilong Zhu
    • H01L29/775
    • H01L29/775H01L29/161H01L29/165H01L29/517H01L29/518H01L29/66431H01L29/66545H01L29/7786
    • The present invention discloses a semiconductor device, which comprises a substrate, a buffer layer on the substrate, an inversely doped isolation layer on the buffer layer, a barrier layer on the inversely doped isolation layer, a channel layer on the barrier layer, a gate stack structure on the channel layer, and source and drain regions at both sides of the gate stack structure, characterized in that the buffer layer and/or the barrier layer and/or the inversely doped isolation layer are formed of SiGe alloys or SiGeSn alloys, and the channel layer is formed of a GeSn alloy. The semiconductor device according to the present invention uses a quantum well structure of SiGe/GeSn/SiGe to restrict transportation of carriers, and it introduces a stress through lattice mis-match to greatly increase the carrier mobility, thus improving the device driving capability so as to be adapted to high-speed and high-frequency application.
    • 本发明公开了一种半导体器件,其包括衬底,衬底上的缓冲层,缓冲层上的反掺杂隔离层,反掺杂隔离层上的阻挡层,阻挡层上的沟道层,栅极 沟道层上的堆叠结构以及栅极堆叠结构两侧的源极和漏极区域,其特征在于缓冲层和/或势垒层和/或反向掺杂隔离层由SiGe合金或SiGeSn合金形成, 并且沟道层由GeSn合金形成。 根据本发明的半导体器件使用SiGe / GeSn / SiGe的量子阱结构来限制载流子的传输,并且通过晶格失配引入应力以大大增加载流子迁移率,从而提高器件驱动能力,从而 适应高速高频应用。
    • 9. 发明授权
    • Detecting and measuring live pathogens utilizing a mass detection device
    • 利用质量检测装置检测和测量活的病原体
    • US08236508B2
    • 2012-08-07
    • US12361922
    • 2009-01-29
    • Rajakkannu MutharasanPeter A. NagySen Xu
    • Rajakkannu MutharasanPeter A. NagySen Xu
    • C12Q1/04G01N33/53
    • G01N33/56911
    • Extremely minute amounts of live pathogens are rapidly detected using a piezoelectric cantilever sensor. A single pathogen is detectable in about 30 minutes. Pathogen-specific antibodies are immobilized on the sensor surface. The sensor is exposed to a medium that potentially contains the target pathogen. When target pathogens are contained in the medium, both dead and live pathogen cells bind to the immobilized antibody on the sensor surface. The attached target pathogen cells are exposed to a pathogen discriminator capable of discriminating between live cells and dead cells by increasing the mass of live cells. Example pathogens include Escherichia coli, Listeri monocytogene, and Salmonella enteritidis. Example antibodies include those that bind to the pathogenic bacteria designated as ATCC 43251, ATCC 700375, and ATCC 31194. Example pathogen discriminators include intracellular pH indicating molecules.
    • 使用压电悬臂传感器快速检测极微量的活病原体。 在大约30分钟内可以检测到单个病原体。 病原体特异性抗体固定在传感器表面上。 传感器暴露于潜在含有目标病原体的介质中。 当目标病原体包含在培养基中时,死亡和活的病原体细胞均与传感器表面上的固定化抗体结合。 将附着的目标病原体细胞暴露于能够通过增加活细胞质量来区分活细胞和死细胞的病原体鉴别器。 示例性病原体包括大肠杆菌,单核细胞增多性李斯特菌和肠炎沙门氏菌。 示例性抗体包括结合命名为ATCC 43251,ATCC 700375和ATCC 31194的致病细菌的抗体。实例性病原体鉴别剂包括细胞内pH指示分子。