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1. 发明授权

US07320942B2 Method for removal of metallic residue after plasma etching of a metal layer 失效
标题翻译：在等离子体蚀刻金属层之后去除金属残留物的方法
公开(公告)号：US07320942B2
公开(公告)日：2008-01-22
申请号：US10285967
申请日：2002-11-01
申请人： Xiaoyi Chen , Chentsau Ying , Padmapani C. Nallan , Ajay Kumar , Ralph C. Kerns , Ying Rui , Chun Yan , Guowen Ding , Wai-Fan Yau
发明人： Xiaoyi Chen , Chentsau Ying , Padmapani C. Nallan , Ajay Kumar , Ralph C. Kerns , Ying Rui , Chun Yan , Guowen Ding , Wai-Fan Yau
IPC分类号： H01L21/302 , H01L21/308
CPC分类号： H01L21/02071 , H01L21/31138 , H01L21/6708 , H01L21/67161 , H01L21/67184 , H01L43/12 , Y10S438/906
摘要： A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.
摘要翻译：一种在半导体衬底处理系统中通过在氟化氢溶液中清洗衬底的等离子体蚀刻工艺之后从衬底去除金属残留物的方法。

2. 发明授权

US09856558B2 Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface 有权
公开(公告)号：US09856558B2
公开(公告)日：2018-01-02
申请号：US12077067
申请日：2008-03-14
申请人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
发明人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
IPC分类号： C23C14/34 , C23C14/35 , H01J37/32 , H01J37/34 , C23C14/50 , C23C14/54
CPC分类号： C23C14/35 , C23C14/3471 , C23C14/50 , C23C14/542 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/3266 , H01J37/32706 , H01J37/32715 , H01J37/34 , H01J37/3444
摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

3. 发明授权

US09593411B2 Physical vapor deposition chamber with capacitive tuning at wafer support 有权
标题翻译：物理气相沉积室，在晶片支持下进行电容调谐
公开(公告)号：US09593411B2
公开(公告)日：2017-03-14
申请号：US13614704
申请日：2012-09-13
申请人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
发明人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
IPC分类号： C23C14/34 , C23C14/35 , H01J37/32 , H01J37/34 , C23C14/50
CPC分类号： C23C14/35 , C23C14/3471 , C23C14/50 , C23C14/542 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/3266 , H01J37/32706 , H01J37/32715 , H01J37/34 , H01J37/3444
摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
摘要翻译：在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

4. 发明授权

US07972968B2 High density plasma gapfill deposition-etch-deposition process etchant 失效
标题翻译：高密度等离子体填隙沉积 - 蚀刻沉积工艺蚀刻剂
公开(公告)号：US07972968B2
公开(公告)日：2011-07-05
申请号：US12193162
申请日：2008-08-18
申请人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
发明人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
IPC分类号： H01L21/461
CPC分类号： H01L21/76224 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.
摘要翻译：将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分，的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

5. 发明申请

US20110120505A1 APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING 审中-公开
标题翻译：背景清洁期间前侧保护的装置和方法
公开(公告)号：US20110120505A1
公开(公告)日：2011-05-26
申请号：US13017569
申请日：2011-01-31
申请人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： B08B3/00 , B08B13/00 , H05H1/24 , B05B1/00
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

6. 发明授权

US08563428B2 Methods for depositing metal in high aspect ratio features 有权
标题翻译：在高宽比特征中沉积金属的方法
公开(公告)号：US08563428B2
公开(公告)日：2013-10-22
申请号：US13223788
申请日：2011-09-01
申请人： Karl Brown , Alan Ritchie , John Pipitone , Ying Rui , Daniel J. Hoffman
发明人： Karl Brown , Alan Ritchie , John Pipitone , Ying Rui , Daniel J. Hoffman
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/185 , C23C14/3492
摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
摘要翻译：本文提供了以高纵横比特征沉积金属的方法。在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

7. 发明授权

US08092605B2 Magnetic confinement of a plasma 失效
标题翻译：等离子体的磁约束
公开(公告)号：US08092605B2
公开(公告)日：2012-01-10
申请号：US11564206
申请日：2006-11-28
申请人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
发明人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： H01J37/3266 , H01J37/32082 , H01J37/32623
摘要： A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.
摘要翻译：本文提供了一种限制等离子体的方法和装置。在一个实施例中，用于限制等离子体的装置包括基板支撑件和磁场形成装置，用于在至少设置在衬底支架上的第一区域之间形成靠近边界的磁场，其中将形成等离子体，以及第二区域，其中等离子体将被选择性地限制。磁场具有垂直于期望等离子体限制的方向的b场分量，其根据用于形成等离子体的工艺条件，选择性地限制等离子体的带电物质从第一区域到第二区域的移动。

8. 发明申请

US20100041207A1 HIGH DENSITY PLASMA GAPFILL DEPOSITION-ETCH-DEPOSITION PROCESS USING FLUOROCARBON ETCHANT 失效
标题翻译：使用荧光探针的高密度等离子体吸附沉积 - 沉积沉积工艺
公开(公告)号：US20100041207A1
公开(公告)日：2010-02-18
申请号：US12193162
申请日：2008-08-18
申请人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
发明人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.
摘要翻译：将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分，的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

9. 发明授权

US07879183B2 Apparatus and method for front side protection during backside cleaning 失效
标题翻译：背面清洁时的前侧保护装置和方法
公开(公告)号：US07879183B2
公开(公告)日：2011-02-01
申请号：US12038499
申请日：2008-02-27
申请人： Imad Yousif , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： Imad Yousif , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： H01L21/306 , C23C16/00 , C23C16/455
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

10. 发明申请

US20090214798A1 APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING 失效
标题翻译：背景清洁期间前侧保护的装置和方法
公开(公告)号：US20090214798A1
公开(公告)日：2009-08-27
申请号：US12038499
申请日：2008-02-27
申请人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： H01L21/306 , H01L21/308 , H01L21/67 , B05B1/14
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

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