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1. 发明授权

US08092605B2 Magnetic confinement of a plasma 失效
标题翻译：等离子体的磁约束
公开(公告)号：US08092605B2
公开(公告)日：2012-01-10
申请号：US11564206
申请日：2006-11-28
申请人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
发明人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： H01J37/3266 , H01J37/32082 , H01J37/32623
摘要： A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.
摘要翻译：本文提供了一种限制等离子体的方法和装置。在一个实施例中，用于限制等离子体的装置包括基板支撑件和磁场形成装置，用于在至少设置在衬底支架上的第一区域之间形成靠近边界的磁场，其中将形成等离子体，以及第二区域，其中等离子体将被选择性地限制。磁场具有垂直于期望等离子体限制的方向的b场分量，其根据用于形成等离子体的工艺条件，选择性地限制等离子体的带电物质从第一区域到第二区域的移动。

2. 发明申请

US20080121345A1 MAGNETIC CONFINEMENT OF A PLASMA 失效
标题翻译：等离子体的磁性限制
公开(公告)号：US20080121345A1
公开(公告)日：2008-05-29
申请号：US11564206
申请日：2006-11-28
申请人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
发明人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
IPC分类号： H01L21/306
CPC分类号： H01J37/3266 , H01J37/32082 , H01J37/32623
摘要： A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.
摘要翻译：本文提供了一种限制等离子体的方法和装置。在一个实施例中，用于限制等离子体的装置包括基板支撑件和磁场形成装置，用于在至少设置在衬底支架上的第一区域之间形成靠近边界的磁场，其中将形成等离子体，以及第二区域，其中等离子体将被选择性地限制。磁场具有垂直于期望等离子体限制的方向的b场分量，其根据用于形成等离子体的工艺条件，选择性地限制等离子体的带电物质从第一区域到第二区域的移动。

3. 发明授权

US06325861B1 Method for etching and cleaning a substrate 有权
标题翻译：蚀刻和清洁基板的方法
公开(公告)号：US06325861B1
公开(公告)日：2001-12-04
申请号：US09156959
申请日：1998-09-18
申请人： James A. Stinnett
发明人： James A. Stinnett
IPC分类号： B08B500
CPC分类号： H01L21/02063 , H01L21/31138
摘要： A method of cleaning a substrate 5 to remove etchant residue 10 formed during etching of the substrate, the method comprising the step of exposing the substrate in a process zone 135, to an activated cleaning gas comprising halogen-substituted saturated hydrocarbon gas, oxygen gas, and nitrogen gas.
摘要翻译：一种清洁衬底5以去除在衬底蚀刻期间形成的蚀刻残渣10的方法，该方法包括将处理区135中的衬底暴露于包含卤素取代的饱和烃气体，氧气，和氮气。

4. 发明授权

US06355557B2 Oxide plasma etching process with a controlled wineglass shape 失效
标题翻译：氧化物等离子体蚀刻工艺具有受控的酒杯形状
公开(公告)号：US06355557B2
公开(公告)日：2002-03-12
申请号：US09121190
申请日：1998-07-22
申请人： James A. Stinnett , Cynthia B. Brooks , Walter R. Merry , Jason Regis
发明人： James A. Stinnett , Cynthia B. Brooks , Walter R. Merry , Jason Regis
IPC分类号： H01L214763
CPC分类号： H01L21/76804
摘要： An oxide etching method, particularly applicable to forming through an oxide layer a wineglass shaped contact or via hole of controlled shape. The wineglass hole is particularly useful for eased metal hole filling. The bowl is etched by first etching an anisotropic hole through a mask aperture, and then isotropically etching through the same mask aperture. The relative periods of the anisotropic and isotropic etch determine the lateral-to-vertical dimensions of the bowl. The stem is then etched through the same mask aperture with a strongly anisotropic etch. The isotropic etch may be performed in the same chamber as the anisotropic etch or may advantageously be performed in a separate etch chamber having a remote plasma source.
摘要翻译：一种氧化物蚀刻方法，特别适用于通过氧化物层形成具有受控形状的酒杯形接触或通孔。酒杯孔特别适用于宽松的金属孔填充。通过首先通过掩模孔蚀刻各向异性孔，然后通过相同的掩模孔径进行各向同性蚀刻来蚀刻该碗。各向异性和各向同性蚀刻的相对周期决定了碗的横向至垂直尺寸。然后通过强烈的各向异性蚀刻将杆蚀刻通过相同的掩模孔。各向同性蚀刻可以在与各向异性蚀刻相同的室中进行，或者可以有利地在具有远程等离子体源的分离的蚀刻室中进行。

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