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1. 发明申请

US20080105652A1 CMP of copper/ruthenium/tantalum substrates 审中-公开
标题翻译：铜/钌/钽基板的CMP
公开(公告)号：US20080105652A1
公开(公告)日：2008-05-08
申请号：US11591730
申请日：2006-11-02
申请人： Vlasta Brusic , Renjie Zhou , Christopher C. Thompson , Paul M. Feeney
发明人： Vlasta Brusic , Renjie Zhou , Christopher C. Thompson , Paul M. Feeney
IPC分类号： C09K13/00 , B44C1/00
CPC分类号： C09K3/1409 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic surfactant, calcium ion or magnesium ion, a corrosion inhibitor for copper, and water, wherein the pH of the polishing composition is about 6 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种用于抛光基材的化学机械抛光组合物。抛光组合物包括研磨剂，氧化剂，两亲性非离子表面活性剂，钙离子或镁离子，铜的防腐蚀剂和水，其中抛光组合物的pH为约6至约12.本发明还提供了一种用上述抛光组合物对衬底进行化学机械研磨的方法。

2. 发明授权

US07265055B2 CMP of copper/ruthenium substrates 有权
标题翻译：铜/钌基板的CMP
公开(公告)号：US07265055B2
公开(公告)日：2007-09-04
申请号：US11259645
申请日：2005-10-26
申请人： Christopher C. Thompson , Vlasta Brusic , Renjie Zhou
发明人： Christopher C. Thompson , Vlasta Brusic , Renjie Zhou
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/04
摘要： The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.
摘要翻译：本发明提供了一种化学机械抛光衬底的方法。包含钌和铜的基材与包括抛光组分，过氧化氢，有机酸，至少一种包含至少一个氮原子的杂环化合物和水的化学机械抛光系统接触。抛光组分相对于基底移动，并且研磨衬底的至少一部分以抛光衬底。抛光系统的pH为约6至约12，钌和铜电接触，并且抛光系统中铜的开路电位与钌的开路电位之间的差为约50mV或更小。

3. 发明授权

US09343330B2 Compositions for polishing aluminum/copper and titanium in damascene structures 有权
标题翻译：用于在镶嵌结构中抛光铝/铜和钛的组合物
公开(公告)号：US09343330B2
公开(公告)日：2016-05-17
申请号：US11634576
申请日：2006-12-06
申请人： Vlasta Brusic , Renjie Zhou , Paul Feeney , Christopher Thompson
发明人： Vlasta Brusic , Renjie Zhou , Paul Feeney , Christopher Thompson
IPC分类号： C09K3/14 , H01L21/321 , C09G1/02
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463
摘要： The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种用于抛光基材的化学机械抛光组合物。抛光组合物包含氧化剂，钙离子，有机羧酸和水，其中抛光组合物的pH为约1.5至约7.本发明还提供了用上述抛光对基材进行化学机械研磨的方法组成。

4. 发明申请

US20080134585A1 Compositions for polishing aluminum/copper and titanium in damascene structures 有权
标题翻译：用于在镶嵌结构中抛光铝/铜和钛的组合物
公开(公告)号：US20080134585A1
公开(公告)日：2008-06-12
申请号：US11634576
申请日：2006-12-06
申请人： Vlasta Brusic , Renjie Zhou , Paul Feeney , Christopher Thompson
发明人： Vlasta Brusic , Renjie Zhou , Paul Feeney , Christopher Thompson
IPC分类号： C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463
摘要： The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种用于抛光基材的化学机械抛光组合物。抛光组合物包含氧化剂，钙离子，有机羧酸和水，其中抛光组合物的pH为约1.5至约7.本发明还提供了用上述抛光对基材进行化学机械研磨的方法组成。

5. 发明申请

US20070090094A1 CMP of copper/ruthenium substrates 有权
公开(公告)号：US20070090094A1
公开(公告)日：2007-04-26
申请号：US11259645
申请日：2005-10-26
申请人： Christopher Thompson , Vlasta Brusic , Renjie Zhou
发明人： Christopher Thompson , Vlasta Brusic , Renjie Zhou
IPC分类号： C03C15/00 , C23F1/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/04
摘要： The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.

6. 发明授权

US06632377B1 Chemical-mechanical planarization of metallurgy 有权
标题翻译：化学机械平面化冶金
公开(公告)号：US06632377B1
公开(公告)日：2003-10-14
申请号：US09409798
申请日：1999-09-30
申请人： Vlasta Brusic , Daniel C. Edelstein , Paul M. Feeney , William Guthrie , Mark Jaso , Frank B. Kaufman , Naftali Lustig , Peter Roper , Kenneth Rodbell , David B. Thompson
发明人： Vlasta Brusic , Daniel C. Edelstein , Paul M. Feeney , William Guthrie , Mark Jaso , Frank B. Kaufman , Naftali Lustig , Peter Roper , Kenneth Rodbell , David B. Thompson
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C09K13/04 , C23F3/00 , H01L21/3212
摘要： Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.
摘要翻译：铜或铜合金通过化学机械平面化（CMP）在氧化剂，氧化抑制剂和显着调节与氧化抑制剂络合铜的添加剂的浆料中去除。

7. 发明申请

US20080156774A1 CMP method for gold-containing substrates 审中-公开
标题翻译：含金底物的CMP方法
公开(公告)号：US20080156774A1
公开(公告)日：2008-07-03
申请号：US12075019
申请日：2008-03-07
申请人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
发明人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
IPC分类号： B44C1/22
CPC分类号： C23F3/04 , C09G1/02 , H01L21/3212
摘要： The invention provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with a cyanide-free chemical-mechanical polishing (CMP) composition.
摘要翻译：本发明提供了用无氰化学机械抛光（CMP）组合物化学机械地抛光基底的含金表面的方法。

8. 发明授权

US07368066B2 Gold CMP composition and method 有权
标题翻译：金CMP组成和方法
公开(公告)号：US07368066B2
公开(公告)日：2008-05-06
申请号：US11444866
申请日：2006-05-31
申请人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
发明人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
IPC分类号： B44C1/22
CPC分类号： C23F3/04 , C09G1/02 , H01L21/3212
摘要： The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqueous carrier therefor. The invention further provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种无氰化学机械抛光（CMP）组合物，其可用于抛光基底的含金表面。 CMP组合物包含研磨剂，金氧化剂，不含氰化物的金增溶剂及其水性载体。本发明还提供了利用上述抛光组合物对衬底的含金表面进行化学机械抛光的方法。

9. 发明申请

US20070278184A1 Gold CMP composition and method 有权
标题翻译：金CMP组成和方法
公开(公告)号：US20070278184A1
公开(公告)日：2007-12-06
申请号：US11444866
申请日：2006-05-31
申请人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
发明人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
IPC分类号： C03C15/00 , C23F1/00
CPC分类号： C23F3/04 , C09G1/02 , H01L21/3212
摘要： The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqueous carrier therefor. The invention further provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种无氰化学机械抛光（CMP）组合物，其可用于抛光基底的含金表面。 CMP组合物包含研磨剂，金氧化剂，不含氰化物的金增溶剂及其水性载体。本发明还提供了利用上述抛光组合物对衬底的含金表面进行化学机械抛光的方法。

10. 发明授权

US06527622B1 CMP method for noble metals 有权
标题翻译：贵金属的CMP方法
公开(公告)号：US06527622B1
公开(公告)日：2003-03-04
申请号：US10054059
申请日：2002-01-22
申请人： Vlasta Brusic , Francesco M. De Rege , Kevin J. Moeggenborg , Isaac K. Cherian , Renjie Zhou
发明人： Vlasta Brusic , Francesco M. De Rege , Kevin J. Moeggenborg , Isaac K. Cherian , Renjie Zhou
IPC分类号： B24B100
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06 , H01L28/65
摘要： The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP systems each comprise an abrasive and/or polishing pad, a liquid carrier, and optionally one or more polishing additives. In a first embodiment, the polishing additives are selected from the group consisting of diketones, diketonates, heterocyclic nitrogen-containing compounds, heterocyclic oxygen-containing compounds, heterocyclic phosphorus-containing compounds, urea compounds, nitrogen-containing compounds that can be zwitterionic compounds, salts thereof, and combinations thereof. In a second embodiment, the polishing additive is a metal compound with two or more oxidation states and is used in conjunction with a peroxy-type oxidizer. In a third embodiment, the CMP system comprises &agr;-alumina and fumed alumina, wherein the weight ratio of &agr;-alumina to fumed alumina is about 0.6:1 to about 9:1.
摘要翻译：本发明提供一种抛光包括贵金属的基材的方法，包括（i）使基板与CMP系统接触，以及（ii）研磨基材的至少一部分以抛光基材。 CMP系统各自包括磨料和/或抛光垫，液体载体和任选的一种或多种抛光添加剂。在第一实施方案中，抛光添加剂选自二酮，二酮，杂环含氮化合物，含杂环氧的化合物，含杂环的化合物，尿素化合物，可以是两性离子化合物的含氮化合物，其盐，及其组合。在第二实施方案中，抛光添加剂是具有两种或更多种氧化态的金属化合物，并与过氧型氧化剂结合使用。在第三个实施方案中，CMP系统包括α-氧化铝和热解氧化铝，其中α-氧化铝与热解氧化铝的重量比为约0.6:1至约9:1。

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