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1. 发明授权

US09105637B2 Anti-fuse structure and fabrication 有权
标题翻译：防熔丝结构和制造
公开(公告)号：US09105637B2
公开(公告)日：2015-08-11
申请号：US13475542
申请日：2012-05-18
申请人： Ronald G. Filippi , Naftali Lustig , Ping-Chuan Wang , Lijuan Zhang
发明人： Ronald G. Filippi , Naftali Lustig , Ping-Chuan Wang , Lijuan Zhang
IPC分类号： H01L23/52 , H01L21/768 , H01L23/525 , H01L27/10
CPC分类号： H01L23/5252 , H01L21/76807 , H01L21/76816 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： A method including a first interconnect level including a first electrode embedded in a first dielectric layer, a top surface of the first electrode is substantially flush with a top surface of the first dielectric layer, a second interconnect level including a via embedded in a second dielectric layer above the first dielectric layer, a third dielectric layer in direct contact with and separating the first dielectric layer and the second dielectric layer, an entire top surface of the first electrode is in direct physical contact with a bottom surface of the third dielectric layer, and an interface between the first dielectric layer and the third dielectric layer extending from the top surface of the first electrode to the via, the interface including a length less than a minimum width of the via, a bottom surface of the via is in direct physical contact with the first dielectric layer.
摘要翻译：一种包括第一互连电平的方法，包括嵌入在第一电介质层中的第一电极，第一电极的顶表面基本上与第一电介质层的顶表面平齐，第二互连电平包括嵌入第二电介质中的通孔在与第一介电层和第二介电层直接接触和分离的第三电介质层上，第一电极的整个顶表面与第三电介质层的底表面直接物理接触，以及从第一电极的顶表面延伸到通孔的第一介电层和第三电介质层之间的界面，所述界面包括小于通孔的最小宽度的长度，通孔的底表面是直接物理的与第一电介质层接触。

2. 发明申请

US20150137312A1 METAL FUSE STRUCTURE FOR IMPROVED PROGRAMMING CAPABILITY 有权
标题翻译：用于改进编程能力的金属保险丝结构
公开(公告)号：US20150137312A1
公开(公告)日：2015-05-21
申请号：US14580539
申请日：2014-12-23
申请人： Griselda Bonilla , Kaushik Chanda , Samuel S. Choi , Ronald G. Filippi , Stephan Grunow , Naftali Lustig , Andrew H. Simon , Junjing Bao
发明人： Griselda Bonilla , Kaushik Chanda , Samuel S. Choi , Ronald G. Filippi , Stephan Grunow , Naftali Lustig , Andrew H. Simon , Junjing Bao
IPC分类号： H01L23/525 , H01L23/528 , H01L23/522
CPC分类号： H01L23/5256 , H01H69/02 , H01H85/046 , H01H2085/0275 , H01L23/5226 , H01L23/528 , H01L2924/0002 , Y10T29/49107 , H01L2924/00
摘要： Structure providing more reliable fuse blow location, and method of making the same. A vertical metal fuse blow structure has, prior to fuse blow, an intentionally damaged portion of the fuse conductor. The damaged portion helps the fuse blow in a known location, thereby decreasing the resistance variability in post-blow circuits. At the same time, prior to fuse blow, the fuse structure is able to operate normally. The damaged portion of the fuse conductor is made by forming an opening in a cap layer above a portion of the fuse conductor, and etching the fuse conductor. Preferably, the opening is aligned such that the damaged portion is on the top corner of the fuse conductor. A cavity can be formed in the insulator adjacent to the damaged fuse conductor. The damaged fuse structure having a cavity can be easily incorporated in a process of making integrated circuits having air gaps.
摘要翻译：提供更可靠的保险丝熔断位置的结构及其制作方法。在熔断器熔断之前，垂直金属保险丝熔断结构在熔丝导体有意损坏的部分。损坏的部分有助于熔断器在已知位置中熔断，从而降低后吹回路中的电阻变化。同时，在保险丝熔断之前，保险丝结构能够正常工作。熔丝导体的损坏部分是通过在保险丝导体的一部分上方的盖层中形成开口，并蚀刻熔丝导体而制成的。优选地，开口对准，使得损坏部分在熔丝导体的顶角上。可以在与损坏的保险丝导体相邻的绝缘体中形成空腔。具有空腔的损坏的保险丝结构可以容易地结合在制造具有气隙的集成电路的过程中。

3. 发明申请

US20050064658A1 TWO-MASK PROCESS FOR METAL-INSULATOR-METAL CAPACITORS AND SINGLE MASK PROCESS FOR THIN FILM RESISTORS 失效
标题翻译：金属绝缘体金属电容器的双掩模工艺和薄膜电阻器的单掩模工艺
公开(公告)号：US20050064658A1
公开(公告)日：2005-03-24
申请号：US10605260
申请日：2003-09-18
申请人： Glenn Biery , Zheng Chen , Timothy Dalton , Naftali Lustig
发明人： Glenn Biery , Zheng Chen , Timothy Dalton , Naftali Lustig
IPC分类号： H01L21/02 , H01L21/027 , H01L21/20 , H01L21/8242
CPC分类号： H01L28/20 , H01L21/0274 , H01L28/40
摘要： MIM capacitors and thin film resistors are fabricated with at least one less lithographic step than the prior art methods. The process step reduction is realized by using semi-transparent metallic electrodes, fabricated with a two-mask process, which provides for direct alignment, and eliminates the need for alignment trenches in an additional layer.
摘要翻译： MIM电容器和薄膜电阻器与现有技术的方法相比制造的光刻步骤至少少一个。通过使用通过双掩模工艺制造的半透明金属电极实现工艺步骤减少，其提供直接对准，并且不需要在附加层中对准沟槽。

4. 发明申请

US20130307115A1 ANTI-FUSE STRUCTURE AND FABRICATION 有权
标题翻译：防冻结构和制造
公开(公告)号：US20130307115A1
公开(公告)日：2013-11-21
申请号：US13475542
申请日：2012-05-18
申请人： Ronald G. Filippi , Naftali Lustig , Ping-Chuan Wang , Lijuan Zhang
发明人： Ronald G. Filippi , Naftali Lustig , Ping-Chuan Wang , Lijuan Zhang
IPC分类号： H01L23/52 , H01L21/768
CPC分类号： H01L23/5252 , H01L21/76807 , H01L21/76816 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： A method and structure of a non-intrinsic anti-fuse structure. The anti-fuse structure has a first electrode, a second electrode, a first dielectric, and second dielectric. The first and second dielectrics have an interface which couples electrodes. The length along the interface which couples the electrodes is called the predetermined length. When the anti-fuse is programmed a conductive link forms along the interface to connect the first and second electrodes. The anti-fuse structure can be single-level or dual-level. The predetermined length can be less than spacing between adjacent electrodes when a dual-level structure is used. The anti-fuse structures have the advantage that they can be programmed at lower voltages than intrinsic structures and no extra steps are needed to integrate the anti-fuses with active structures.
摘要翻译：非本征反熔丝结构的方法和结构。反熔丝结构具有第一电极，第二电极，第一电介质和第二电介质。第一和第二电介质具有连接电极的界面。沿着连接电极的界面的长度称为预定长度。当反熔丝被编程时，沿着界面形成导电连接以连接第一和第二电极。反熔丝结构可以是单级或双级。当使用双层结构时，预定长度可以小于相邻电极之间的间距。反熔丝结构具有的优点是可以以比内部结构更低的电压进行编程，并且不需要额外的步骤来将反熔丝与有源结构集成。

5. 发明授权

US08129269B1 Method of improving mechanical properties of semiconductor interconnects with nanoparticles 失效
标题翻译：改善纳米颗粒半导体互连的机械性能的方法
公开(公告)号：US08129269B1
公开(公告)日：2012-03-06
申请号：US12885596
申请日：2010-09-20
申请人： Junjing Bao , Tien-Jen J. Cheng , Naftali Lustig
发明人： Junjing Bao , Tien-Jen J. Cheng , Naftali Lustig
IPC分类号： H01L21/76 , H01L21/4763
CPC分类号： H01L21/76829 , H01L21/02126 , H01L21/02203 , H01L21/02348 , H01L21/3105 , H01L21/76832 , H01L23/53295 , H01L2924/0002 , Y10S438/96 , H01L2924/00
摘要： In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.
摘要翻译：在BEOL工艺中，UV辐射用于超低k（ULK）电介质的固化过程中。该辐射穿过ULK材料并到达其下方的盖膜。 UV光和膜之间的相互作用导致盖膜的性质的改变。特别令人关切的是，帽的应力状态从压缩到拉伸应力的变化。这导致ULK膜的介电盖接口和机械故障较弱。将一层纳米颗粒插入盖和ULK膜之间。纳米粒子吸收紫外线，然后才能损坏盖膜，从而保持ULK电介质的机械完整性。

6. 发明授权

US06632377B1 Chemical-mechanical planarization of metallurgy 有权
标题翻译：化学机械平面化冶金
公开(公告)号：US06632377B1
公开(公告)日：2003-10-14
申请号：US09409798
申请日：1999-09-30
申请人： Vlasta Brusic , Daniel C. Edelstein , Paul M. Feeney , William Guthrie , Mark Jaso , Frank B. Kaufman , Naftali Lustig , Peter Roper , Kenneth Rodbell , David B. Thompson
发明人： Vlasta Brusic , Daniel C. Edelstein , Paul M. Feeney , William Guthrie , Mark Jaso , Frank B. Kaufman , Naftali Lustig , Peter Roper , Kenneth Rodbell , David B. Thompson
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C09K13/04 , C23F3/00 , H01L21/3212
摘要： Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.
摘要翻译：铜或铜合金通过化学机械平面化（CMP）在氧化剂，氧化抑制剂和显着调节与氧化抑制剂络合铜的添加剂的浆料中去除。

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