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    • 4. 发明申请
    • Sterile Access Conduit
    • 无菌通道
    • US20080319258A1
    • 2008-12-25
    • US11994678
    • 2006-07-14
    • Christopher C. Thompson
    • Christopher C. Thompson
    • A61B1/018
    • A61B17/3431A61B1/00135A61B1/00154A61B1/01A61B1/2736A61B17/3415A61B46/10A61B90/40A61B2017/00278A61B2017/3488
    • An elongate flexible conduit including a sealing membrane is positioned through a natural body orifice and along the gastrointestinal (GI) tract of a patient. The sealing membrane is advanced along the GI tract until proximate a target wall segment of an inner wall of the GI tract. The sealing membrane is then permanently or releasably attached to the target wall segment thereby sealing off and isolating the target wall segment from the rest of the GI tract establishing a sterile pathway from the target wall to the natural body orifice. An incision is made through both the sealing membrane and the wall of the GI tract to gain access to the peritoneum to perform surgical techniques without allowing bacteria, stomach acids, and other contaminants in the GI tract to enter the peritoneum. An instrument can then be introduced into the peritoneal cavity through the incision along the sterile pathway.
    • 包括密封膜的细长柔性导管通过天然体孔和沿着患者的胃肠(GI)通道定位。 密封膜沿胃肠道前进,直到胃肠道内壁的目标壁段附近。 然后将密封膜永久地或可释放地附接到目标壁段,从而密封并将目标壁段与GI道的其余部分隔离,从而形成从目标壁到自然体孔的无菌路径。 通过密封膜和GI道的壁进行切口以进入腹膜进行外科手术,而不会使胃肠道中的细菌,胃酸和其他污染物进入腹膜。 然后可以通过沿着无菌途径的切口将器械引入腹膜腔。
    • 8. 发明授权
    • CMP of copper/ruthenium substrates
    • 铜/钌基板的CMP
    • US07265055B2
    • 2007-09-04
    • US11259645
    • 2005-10-26
    • Christopher C. ThompsonVlasta BrusicRenjie Zhou
    • Christopher C. ThompsonVlasta BrusicRenjie Zhou
    • H01L21/302
    • H01L21/3212C09G1/02C23F3/04
    • The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.
    • 本发明提供了一种化学机械抛光衬底的方法。 包含钌和铜的基材与包括抛光组分,过氧化氢,有机酸,至少一种包含至少一个氮原子的杂环化合物和水的化学机械抛光系统接触。 抛光组分相对于基底移动,并且研磨衬底的至少一部分以抛光衬底。 抛光系统的pH为约6至约12,钌和铜电接触,并且抛光系统中铜的开路电位与钌的开路电位之间的差为约50mV或更小。