专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07345290B2 Lens array for electron beam lithography tool 有权
标题翻译：用于电子束光刻工具的透镜阵列
公开(公告)号：US07345290B2
公开(公告)日：2008-03-18
申请号：US09414004
申请日：1999-10-07
申请人： Victor Katsap , Pieter Kruit , Daniel Moonen , Warren Kazmir Waskiewicz
发明人： Victor Katsap , Pieter Kruit , Daniel Moonen , Warren Kazmir Waskiewicz
IPC分类号： G21K5/10
CPC分类号： H01J37/065 , H01J37/12 , H01J2237/1205 , H01J2237/31774
摘要： A method and apparatus for controlling beam emittance by placing a lens array in a drift space of an illumination system component. The illumination system component may be an electron gun or a liner tube or drift tube, attachable to an electron gun. The lens array may be one or more mesh grids or a combination of grids and continuous foils. The lens array forms a multitude of microlenses resembling an optical “fly's eye” lens. The lens array splits an incoming solid electron beam into a multitude of subbeams, such that the outgoing beam emittance is different from the incoming beam emittance, while beam total current remains unchanged. The method and apparatus permit independent control of beam current and beam emittance, which is beneficial in a SCALPEL illumination system.
摘要翻译：一种通过将透镜阵列放置在照明系统部件的漂移空间中来控制光束发射的方法和装置。照明系统部件可以是可附接到电子枪的电子枪或衬管或漂移管。透镜阵列可以是一个或多个网状网格或网格和连续箔片的组合。透镜阵列形成大量类似于光学“飞眼”透镜的微透镜。透镜阵列将输入的固体电子束分裂成多个子束，使得输出光束发射不同于入射光束发射，而光束总电流保持不变。该方法和装置允许对束电流和光束发射的独立控制，这在SCALPEL照明系统中是有益的。

2. 发明授权

US06333508B1 Illumination system for electron beam lithography tool 有权
标题翻译：电子束光刻工具照明系统
公开(公告)号：US06333508B1
公开(公告)日：2001-12-25
申请号：US09580530
申请日：2000-05-30
申请人： Victor Katsap , Pieter Kruit , Daniel Moonen , Warren K Waskiewicz
发明人： Victor Katsap , Pieter Kruit , Daniel Moonen , Warren K Waskiewicz
IPC分类号： H01J37302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J3/18 , H01J37/063 , H01J37/12 , H01J37/3174 , H01J2237/065 , H01J2237/12 , H01J2237/1205 , H01J2237/3175 , H01J2237/31774
摘要： A method and apparatus for controlling beam emittance by placing a quadrupole lens array in a drift space of an illumination system component. The illumination system component may be an electron gun or a liner tube or drift tube, attachable to an electron gun. The quadrupole lens array may be three or more mesh grids or a combination of grids and continuous foils. The quadrupole lens array forms a multitude of microlenses resembling an optical “fly's eye” lens. The quadrupole lens array splits an incoming solid electron beam into a multitude of subbeams, such that the outgoing beam emittance is different from the incoming beam emittance, while beam total current remains unchanged. The method and apparatus permit independent control of beam current and beam emittance, which is beneficial in a SCALPEL illumination system.
摘要翻译：一种通过将四极透镜阵列放置在照明系统部件的漂移空间中来控制光束发射的方法和装置。照明系统部件可以是可附接到电子枪的电子枪或衬管或漂移管。四极透镜阵列可以是三个或更多个网格或网格和连续箔片的组合。四极透镜阵列形成大量类似于光学“飞眼”透镜的微透镜。四极透镜阵列将输入的固体电子束分裂成多个子束，使得输出光束发射不同于入射光束发射，而光束总电流保持不变。该方法和装置允许对束电流和光束发射的独立控制，这在SCALPEL照明系统中是有益的。

3. 发明授权

US06492647B1 Electron guns for lithography tools 有权
标题翻译：电子枪用于光刻工具
公开(公告)号：US06492647B1
公开(公告)日：2002-12-10
申请号：US09310701
申请日：1999-05-07
申请人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
发明人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
IPC分类号： H01J3730
CPC分类号： H01J37/065 , H01J2237/31791
摘要： The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. The bias on the Wehnelt aperture is reversed from the conventional bias so that it is biased positively with respect to the cathode. The Wehnelt opening is tapered with a disk emitter inserted into the taper. The result of these modifications is an electron beam output with low brightness which is highly uniform over the beam cross section.
摘要翻译：本说明书描述了一种用于电子束光刻的方法和装置，其中修改了Wehnelt电子枪以改善电子束的均匀性。 Wehnelt孔径上的偏置与传统的偏压相反，使得它相对于阴极被正向偏置。 Wehnelt开口呈锥形，盘形发生器插入锥形。这些修改的结果是具有低亮度的电子束输出，其在束横截面上是高度均匀的。

4. 发明授权

US06232040B1 Method of electron beam exposure utilizing emitter with conductive mesh grid 有权
标题翻译：使用具有导电网格的发射体的电子束曝光方法
公开(公告)号：US06232040B1
公开(公告)日：2001-05-15
申请号：US09306287
申请日：1999-05-06
申请人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
发明人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
IPC分类号： G03C500
CPC分类号： H01J37/065 , H01J2237/3175 , Y10S430/143
摘要： The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. A mesh grid is applied to the Wehnelt aperture and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i.e. less than 100 volts, which can be switched conveniently and economically using semiconductor drive circuits.
摘要翻译：本说明书描述了一种用于电子束光刻的方法和装置，其中修改了Wehnelt电子枪以改善电子束的均匀性。网格格栅应用于Wehnelt孔径，网格栅格用作多重二次发射器，以在广泛的区域产生均匀的光束通量。修改枪的电网电压基本上低于常规的Wehnelt枪，即小于100伏特，其可以使用半导体驱动电路方便和经济地切换。

5. 发明授权

US06400090B2 Electron emitters for lithography tools 有权
标题翻译：用于光刻工具的电子发射器
公开(公告)号：US06400090B2
公开(公告)日：2002-06-04
申请号：US09818799
申请日：2001-03-27
申请人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
发明人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
IPC分类号： H01J2948
CPC分类号： H01J37/065 , H01J2237/3175 , Y10S430/143
摘要： The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. A mesh grid is applied to the Wehnelt aperture and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i.e. less than 100 volts, which can be switched conveniently and economically using semiconductor drive circuits.
摘要翻译：本说明书描述了一种用于电子束光刻的方法和装置，其中修改了Wehnelt电子枪以改善电子束的均匀性。网格格栅应用于Wehnelt孔径，网格栅格用作多重二次发射器，以在广泛的区域产生均匀的光束通量。修改枪的电网电压基本上低于常规的Wehnelt枪，即小于100伏特，其可以使用半导体驱动电路方便和经济地切换。

6. 发明授权

US07176610B2 High brightness thermionic cathode 有权
标题翻译：高亮度热离子阴极
公开(公告)号：US07176610B2
公开(公告)日：2007-02-13
申请号：US10774693
申请日：2004-02-10
申请人： Victor Katsap
发明人： Victor Katsap
IPC分类号： H01J19/06
CPC分类号： H01J9/042 , H01J1/148 , H01J1/15 , H01J2201/19 , H01J2237/06308
摘要： An improved thermionic cathode is provided. The cathode has a carbon-coated cone surface and reduced cone angle (e.g. typically 60 degrees or less) that delivers an electron beam with high angular intensity and brightness and exhibits increased longevity.
摘要翻译：提供了一种改进的热离子阴极。阴极具有碳涂覆的锥形表面和减小的锥角（例如通常为60度或更小），其传送具有高角度强度和亮度的电子束，并且延长寿命。

7. 发明申请

US20050174030A1 HIgh brightness thermionic cathode 有权
标题翻译：高亮度热离子阴极
公开(公告)号：US20050174030A1
公开(公告)日：2005-08-11
申请号：US10774693
申请日：2004-02-10
申请人： Victor Katsap
发明人： Victor Katsap
IPC分类号： H01J1/14 , H01J1/148 , H01J1/15 , H01J1/16 , H01J9/04 , H01J37/06 , H01J19/06
CPC分类号： H01J9/042 , H01J1/148 , H01J1/15 , H01J2201/19 , H01J2237/06308
摘要： An improved thermionic cathode is provided. The cathode has a carbon-coated cone surface and reduced cone angle (e.g. typically 60 degrees or less) that delivers an electron beam with high angular intensity and brightness and exhibits increased longevity.
摘要翻译：提供了一种改进的热离子阴极。阴极具有碳涂覆的锥形表面和减小的锥角（例如通常为60度或更小），其传送具有高角度强度和亮度的电子束，并且延长寿命。

8. 发明授权

US06528799B1 Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems 有权
标题翻译：用于抑制带电粒子投影光刻系统中的空间电荷诱导像差的装置和方法
公开(公告)号：US06528799B1
公开(公告)日：2003-03-04
申请号：US09692150
申请日：2000-10-20
申请人： Victor Katsap , James A. Liddle , Masis Mkrtchyan , Stuart T. Stanton
发明人： Victor Katsap , James A. Liddle , Masis Mkrtchyan , Stuart T. Stanton
IPC分类号： H01J37063
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/065 , H01J37/153 , H01J37/3174 , H01J2237/0656 , Y10S977/881 , Y10S977/887
摘要： An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile. A method of producing a micro-device includes generating a beam of charged particles having a non-uniform charged-particle current density, illuminating a mask with the beam of charged particles, and exposing a workpiece with charged particles from the beam of charged particles.
摘要翻译：电子束光刻设备具有提供加速电子束的电子枪，适于将加速电子束的路径中的掩模保持的掩模台，以及适于将工件保持在具有穿过面具。电子枪具有具有电子发射表面的阴极，适于连接到高压电源的阳极，以在阴极和阳极之间提供电场，以加速从阴极向阳极发射的电子，以及电流设置在阳极和阴极之间的密度分布控制网格。电流密度分布控制网格被配置为提供产生具有不均匀电流密度分布的电子束的电子枪。微型器件的制造方法包括：生成具有不均匀带电粒子电流密度的带电粒子束，用带电粒子束照射掩模，以及从带电粒子束带电的带电粒子露出工件。

9. 发明授权

US06440620B1 Electron beam lithography focusing through spherical aberration introduction 有权
标题翻译：通过球面像差引入聚焦的电子束光刻
公开(公告)号：US06440620B1
公开(公告)日：2002-08-27
申请号：US09679403
申请日：2000-10-04
申请人： Victor Katsap , Eric Munro , John Andrew Rouse , Warren K. Waskiewicz , Xieqing Zhu
发明人： Victor Katsap , Eric Munro , John Andrew Rouse , Warren K. Waskiewicz , Xieqing Zhu
IPC分类号： G03C500
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/1534 , Y10S430/143
摘要： An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL™ electron patterning tool.
摘要翻译：一种聚焦装置和方法，包括用于产生电子束通过的电子束，掩模和投影柱的源，以及电子束将被聚焦的晶片。晶片位于投影柱的球面像差减小由投影柱中的色像差引起的负散焦效应的平面中。该装置和方法适用于通常的电子图案形成工具，其中掩模的厚度小于电子图案形成工具的电子平均自由程的电子图案形成工具，以及SCALPEL TM电子图案形成工具。

10. 发明授权

US06620565B2 Electron beam lithography apparatus focused through spherical aberration introduction 有权
标题翻译：通过球面像差引入聚焦的电子束光刻设备
公开(公告)号：US06620565B2
公开(公告)日：2003-09-16
申请号：US10188030
申请日：2002-07-03
申请人： Victor Katsap , Eric Munro , John Andrew Rouse , Warren K. Waskiewicz , Xieqing Zhu
发明人： Victor Katsap , Eric Munro , John Andrew Rouse , Warren K. Waskiewicz , Xieqing Zhu
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/1534 , Y10S430/143
摘要： An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL™ electron patterning tool.
摘要翻译：一种聚焦装置和方法，包括用于产生电子束通过的电子束，掩模和投影柱的源，以及电子束将被聚焦的晶片。晶片位于投影柱的球面像差减小由投影柱中的色像差引起的负散焦效应的平面中。该装置和方法适用于通常的电子图案形成工具，其中掩模的厚度小于电子图案形成工具的电子平均自由程的电子图案形成工具，以及SCALPEL TM电子图案形成工具。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式