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1. 发明授权

US06400090B2 Electron emitters for lithography tools 有权
标题翻译：用于光刻工具的电子发射器
公开(公告)号：US06400090B2
公开(公告)日：2002-06-04
申请号：US09818799
申请日：2001-03-27
申请人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
发明人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
IPC分类号： H01J2948
CPC分类号： H01J37/065 , H01J2237/3175 , Y10S430/143
摘要： The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. A mesh grid is applied to the Wehnelt aperture and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i.e. less than 100 volts, which can be switched conveniently and economically using semiconductor drive circuits.
摘要翻译：本说明书描述了一种用于电子束光刻的方法和装置，其中修改了Wehnelt电子枪以改善电子束的均匀性。网格格栅应用于Wehnelt孔径，网格栅格用作多重二次发射器，以在广泛的区域产生均匀的光束通量。修改枪的电网电压基本上低于常规的Wehnelt枪，即小于100伏特，其可以使用半导体驱动电路方便和经济地切换。

2. 发明授权

US06492647B1 Electron guns for lithography tools 有权
标题翻译：电子枪用于光刻工具
公开(公告)号：US06492647B1
公开(公告)日：2002-12-10
申请号：US09310701
申请日：1999-05-07
申请人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
发明人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
IPC分类号： H01J3730
CPC分类号： H01J37/065 , H01J2237/31791
摘要： The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. The bias on the Wehnelt aperture is reversed from the conventional bias so that it is biased positively with respect to the cathode. The Wehnelt opening is tapered with a disk emitter inserted into the taper. The result of these modifications is an electron beam output with low brightness which is highly uniform over the beam cross section.
摘要翻译：本说明书描述了一种用于电子束光刻的方法和装置，其中修改了Wehnelt电子枪以改善电子束的均匀性。 Wehnelt孔径上的偏置与传统的偏压相反，使得它相对于阴极被正向偏置。 Wehnelt开口呈锥形，盘形发生器插入锥形。这些修改的结果是具有低亮度的电子束输出，其在束横截面上是高度均匀的。

3. 发明授权

US06232040B1 Method of electron beam exposure utilizing emitter with conductive mesh grid 有权
标题翻译：使用具有导电网格的发射体的电子束曝光方法
公开(公告)号：US06232040B1
公开(公告)日：2001-05-15
申请号：US09306287
申请日：1999-05-06
申请人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
发明人： Victor Katsap , James Alexander Liddle , Warren Kazmir Waskiewicz
IPC分类号： G03C500
CPC分类号： H01J37/065 , H01J2237/3175 , Y10S430/143
摘要： The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. A mesh grid is applied to the Wehnelt aperture and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i.e. less than 100 volts, which can be switched conveniently and economically using semiconductor drive circuits.
摘要翻译：本说明书描述了一种用于电子束光刻的方法和装置，其中修改了Wehnelt电子枪以改善电子束的均匀性。网格格栅应用于Wehnelt孔径，网格栅格用作多重二次发射器，以在广泛的区域产生均匀的光束通量。修改枪的电网电压基本上低于常规的Wehnelt枪，即小于100伏特，其可以使用半导体驱动电路方便和经济地切换。

4. 发明授权

US6051346A Process for fabricating a lithographic mask 失效
标题翻译：光刻掩模的制造工艺
公开(公告)号：US6051346A
公开(公告)日：2000-04-18
申请号：US121266
申请日：1998-07-23
申请人： Avinoam Kornblit , James Alexander Liddle , Anthony Edward Novembre
发明人： Avinoam Kornblit , James Alexander Liddle , Anthony Edward Novembre
IPC分类号： H01L21/027 , G03F1/20 , G03F1/22 , G03F9/00
CPC分类号： G03F1/22 , G03F1/20
摘要： The invention provides an improved process for fabricating masks suitable for use in SCALPEL and similar electron-based or ion-based lithographic processes. Specifically, the process allows use of commercially-available (100) oriented silicon substrates, and better control over the profiles of mask struts. Specifically, the struts of the mask are formed by plasma etching, using a fluorine-based gas, and a unique multilayer mask blank is fabricated to promote successful use of the plasma etch. According to an embodiment of the process, an etch stop layer is deposited onto the front surface of a silicon substrate, and a membrane layer is deposited over the etch stop layer. A scattering layer, typically tungsten, is deposited over the membrane layer. A patterning layer is deposited on the back surface of the substrate, and the desired grillage pattern for the struts is patterned into the patterning layer. The grillage structure is then etched into the silicon, to form the struts, by plasma etching with the fluorine-based gas. The etch stop layer acts to prevent the etch from damaging the membrane layer.
摘要翻译：本发明提供了一种用于制造适用于SCALPEL和类似的基于电子或基于离子的光刻工艺的掩模的改进方法。具体来说，该方法允许使用市售的（100）定向硅衬底，并且更好地控制掩模支柱的轮廓。具体地，通过使用氟基气体的等离子体蚀刻形成掩模的支柱，并且制造独特的多层掩模坯料以促进等离子体蚀刻的成功应用。根据该方法的一个实施方案，将蚀刻停止层沉积在硅衬底的前表面上，并且膜层沉积在蚀刻停止层上。散布层（通常为钨）沉积在膜层上。图案层沉积在衬底的背面，并且用于支柱的所需格栅图案被图案化成图形层。然后通过用氟基气体的等离子体蚀刻将格栅结构蚀刻到硅中以形成支柱。蚀刻停止层用于防止蚀刻损坏膜层。

5. 发明授权

US5985493A Membrane mask for projection lithography 失效
标题翻译：用于投影光刻的膜面罩
公开(公告)号：US5985493A
公开(公告)日：1999-11-16
申请号：US57420
申请日：1998-04-08
申请人： James Alexander Liddle , Anthony Edward Novembre , Gary Robert Weber
发明人： James Alexander Liddle , Anthony Edward Novembre , Gary Robert Weber
IPC分类号： H01L21/027 , G03F1/20 , G03F9/00
CPC分类号： G03F1/20
摘要： An improved, scattering-type mask for use in a charged-particle beam lithography process comprises the mask having a membrane portion and a scattering portion, the membrane portion being fabricated with a conductive material or a plurality of materials in which one of them is conductive. The conductive nature of the membrane portion mitigates the accumulation of charge in the mask, thereby enhancing the definition of the charged-particle pattern transferred from the mask onto the wafer under fabrication and reducing the distortion obtained with the system.
摘要翻译：用于带电粒子束光刻工艺的改进的散射型掩模包括具有膜部分和散射部分的掩模，膜部分由导电材料或多个材料制成，其中一个导电。膜部分的导电性质减轻了掩模中电荷的积累，从而增强了在制造过程中从掩模转移到晶片上的带电粒子图案的定义，并减少了用系统获得的失真。

6. 发明授权

US5701014A Projection lithography apparatus 失效
标题翻译：投影光刻设备
公开(公告)号：US5701014A
公开(公告)日：1997-12-23
申请号：US673705
申请日：1996-06-25
申请人： Steven David Berger , James Alexander Liddle , George Patrick Watson
发明人： Steven David Berger , James Alexander Liddle , George Patrick Watson
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70308 , G03F7/70441 , G03F7/70941 , H01J37/3174 , H01J2237/31769 , H01J2237/31791
摘要： The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.
摘要翻译：本发明涉及投影光刻的方法和装置，其中在单次曝光中有效地消除了由邻近效应引起的引入到辐射敏感材料中的对比度。图案化的辐射通过具有至少一个透镜和后焦平面滤光片的透镜系统透射。后焦平面滤光器具有至少两个孔，图像孔和接近效应校正孔。图案化的辐射通过图像孔径传播并将期望的图像引入到能量敏感的抗蚀剂材料中。反向图案辐射的一部分通过邻近效应校正孔传递到能量敏感抗蚀剂材料上，以有效地消除由邻近效应引起的对比度。

7. 发明授权

US06177218B1 Lithographic process for device fabrication using electron beam imaging 有权
标题翻译：使用电子束成像的器件制造的平版印刷工艺
公开(公告)号：US06177218B1
公开(公告)日：2001-01-23
申请号：US09270487
申请日：1999-03-15
申请人： Joseph Allen Felker , James Alexander Liddle , Stuart Thomas Stanton
发明人： Joseph Allen Felker , James Alexander Liddle , Stuart Thomas Stanton
IPC分类号： G03F900
CPC分类号： G03F7/20 , G03F1/20 , Y10S430/143
摘要： A lithographic process for device fabrication in which a pattern is transferred from a mask into an energy sensitive material by projecting charged particle (e.g. electron beam) radiation onto the mask is disclosed. The pattern on the mask is divided into segments. The radiation transmitted through the mask and incident on the layer of energy sensitive material transfers a continuous image of the segmented mask pattern into the energy sensitive material. The images of each segment are joined together to form the continuous image by seam blending techniques. The seam blending techniques employ duplicate pattern information on segments for which the images are joined together. The image of the duplicate pattern information from a first segment is overlapped with the image of the duplicate pattern information from the second segment to blend the seams together. The exposure of the duplicate pattern information is controlled so that the aggregate dose of radiation used to transfer the image of the duplicate pattern information into the energy sensitive resist is about the same as the does of radiation used to transfer the image of the non-duplicate pattern information into the energy sensitive resist material.
摘要翻译：公开了一种用于器件制造的光刻工艺，其中通过将带电粒子（例如电子束）辐射投射到掩模上，将图案从掩模转移到能量敏感材料中。面罩上的图案分为多段。通过掩模传输并入射到能量敏感材料层上的辐射将分割的掩模图案的连续图像转移到能量敏感材料中。每个片段的图像通过接缝混合技术连接在一起形成连续图像。接缝混合技术在图像连接在一起的段上采用重复的图案信息。来自第一段的重复图案信息的图像与来自第二段的重复图案信息的图像重叠，以将接缝混合在一起。控制重复图案信息的曝光，使得用于将重复图案信息的图像转印到能量敏感抗蚀剂中的辐射的总剂量与用于转印非复制图像的图像的辐射量大致相同图案信息转换成能量敏感抗蚀剂材料。

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