专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080241369A1 METHOD OF FABRICATING A MAGNETIC SHIFT REGISTER 有权
标题翻译：制造磁性移位寄存器的方法
公开(公告)号：US20080241369A1
公开(公告)日：2008-10-02
申请号：US12114636
申请日：2008-05-02
申请人： Tze-chiang Chen , Stuart S.P. Parkin
发明人： Tze-chiang Chen , Stuart S.P. Parkin
IPC分类号： B05D5/12
CPC分类号： H01L29/82 , G11C11/14 , G11C19/02 , G11C19/0808 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. A trench is etched in the multi-layer stack structure. A selective etching process is used to corrugate the walls of trench. A seed layer is applied to the walls and bottom of the trench; the seed layer is covered with a magnetic layer. The trench is filled with an insulating material. A patterned layer is applied and portions of insulating material exposed by the pattern are removed, forming holes. Magnetic material and seed layer exposed in holes is selectively removed. The holes are filled with insulating material and connecting leads are attached to data tracks.
摘要翻译：用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。在多层堆叠结构中蚀刻沟槽。使用选择性蚀刻工艺来使沟槽的壁波纹化。种子层施加到沟槽的壁和底部; 种子层被磁性层覆盖。沟槽填充绝缘材料。施加图案层，去除由图案露出的部分绝缘材料，形成孔。选择性地除去暴露在孔中的磁性材料和种子层。孔中填充绝缘材料，连接引线连接到数据轨道。

2. 发明申请

US20060249790A1 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-inulator (GOI) substrates 有权
标题翻译：用于制造绝缘体上硅（SGOI）和Ge-in-inulator（GOI）基板的方法
公开(公告)号：US20060249790A1
公开(公告)日：2006-11-09
申请号：US11481525
申请日：2006-07-06
申请人： Tze-chiang Chen , Guy Cohen , Alexander Reznicek , Devendra Sadana , Ghavam Shahidi
发明人： Tze-chiang Chen , Guy Cohen , Alexander Reznicek , Devendra Sadana , Ghavam Shahidi
IPC分类号： H01L27/12
CPC分类号： H01L21/76254 , H01L31/02327 , H01L31/028 , H01L31/1812 , Y02E10/547
摘要： A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a substrate, a buried insulator layer located atop the substrate, and a Ge-containing layer, preferably pure Ge, located atop the buried insulator layer. In the GOI substrate materials of the present invention, the Ge-containing layer may also be referred to as the GOI film. The GOI film is the layer of the inventive substrate material in which devices can be formed.
摘要翻译：提供了绝缘体上（锗）绝缘体（GOI）衬底材料的方法，通过该方法生产的GOI衬底材料和至少可以包括本发明的GOI衬底材料的各种结构。 GOI衬底材料至少包括衬底，位于衬底顶部的掩埋绝缘体层，以及位于掩埋绝缘体层顶部的优选纯Ge的Ge含有层。在本发明的GOI基板材料中，Ge含有层也可以称为GOI膜。 GOI膜是可以形成器件的本发明的基底材料的层。

3. 发明授权

US06955926B2 Method of fabricating data tracks for use in a magnetic shift register memory device 失效
标题翻译：制造用于磁移位寄存器存储器件的数据轨道的方法
公开(公告)号：US06955926B2
公开(公告)日：2005-10-18
申请号：US10788190
申请日：2004-02-25
申请人： Tze-chiang Chen , Stuart S. P. Parkin
发明人： Tze-chiang Chen , Stuart S. P. Parkin
IPC分类号： G11C11/15 , G11C19/02 , G11C19/08 , H01L21/00
CPC分类号： G11C19/02 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nm×100 nm are etched in this multilayered stack of alternating layers. Vias may be etched form smooth or notched walls. Vias are filled by electroplating layers of alternating types of ferromagnetic or ferrimagnetic metals. The alternating ferromagnetic or ferrimagnetic layers are comprised of magnetic materials with different magnetization or magnetic exchange or magnetic anisotropies. These different magnetic characteristics allow the pinning of magnetic domain walls at the boundaries between these layers. Alternatively, vias are filled with a homogeneous ferromagnetic material. Magnetic domain walls are formed by the discontinuity in the ferromagnetic or ferromagnetic material that occurs at the notches or at the protuberances along the via walls.
摘要翻译：用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。在该多层交替层中蚀刻约10微米高的具有100nm×100nm量级的横截面的通孔。通孔可能被蚀刻形成平滑或缺口的墙壁。通孔由交替类型的铁磁或亚铁磁性金属的电镀层填充。交替的铁磁或亚铁磁层由具有不同磁化或磁交换或磁各向异性的磁性材料组成。这些不同的磁特性允许磁畴壁在这些层之间的边界处的钉扎。或者，通孔用均匀的铁磁材料填充。磁畴壁由铁氧体或铁磁材料中的不连续部分形成，这些不规则发生在沿着通孔壁的凹口或凸起处。

4. 发明授权

US07084460B2 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates 有权
公开(公告)号：US07084460B2
公开(公告)日：2006-08-01
申请号：US10700085
申请日：2003-11-03
申请人： Tze-chiang Chen , Guy M. Cohen , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi
发明人： Tze-chiang Chen , Guy M. Cohen , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi
IPC分类号： H01L29/12 , H01L31/036 , H01L71/01 , H01L71/12 , H01L31/039
CPC分类号： H01L21/76254 , H01L31/02327 , H01L31/028 , H01L31/1812 , Y02E10/547
摘要： A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a substrate, a buried insulator layer located atop the substrate, and a Ge-containing layer, preferably pure Ge, located atop the buried insulator layer. In the GOI substrate materials of the present invention, the Ge-containing layer may also be referred to as the GOI film. The GOI film is the layer of the inventive substrate material in which devices can be formed.

5. 发明授权

US06593205B1 Patterned SOI by formation and annihilation of buried oxide regions during processing 有权
标题翻译：在加工期间通过掩埋氧化物区域的形成和湮灭的图案化SOI
公开(公告)号：US06593205B1
公开(公告)日：2003-07-15
申请号：US10080804
申请日：2002-02-21
申请人： Tze-chiang Chen , Devendra K. Sadana
发明人： Tze-chiang Chen , Devendra K. Sadana
IPC分类号： H01L2176
CPC分类号： H01L21/76243
摘要： A method of fabricating a silicon-on-insulator (SOI) substrate including at least one patterned buried oxide region having well defined edges is provided. The method includes a step of implanting first ions into a surface of a Si-containing substrate so as to form an implant region of the first ions in the Si-containing substrate. Following the first implant step, a selective implant process is employed wherein second ions that are insoluble in SiO2 are incorporated into portions of the Si-containing substrate. The second ions employed in the selective implant step are capable of preventing the implant region of first ions from forming an oxide region during a subsequent annealing step. An annealing step is then performed which causes formation of a buried oxide region in the implant region of first ions that does not include the second ions.
摘要翻译：提供了一种制造绝缘体上硅（SOI）衬底的方法，其包括至少一个具有良好限定边缘的图案化掩埋氧化物区域。该方法包括将第一离子注入含Si衬底的表面以便在含Si衬底中形成第一离子的注入区的步骤。在第一注入步骤之后，使用选择性注入工艺，其中不溶于SiO 2的第二离子被并入含Si衬底的部分中。在选择性注入步骤中使用的第二离子能够在随后的退火步骤期间防止第一离子的注入区域形成氧化物区域。然后执行退火步骤，其导致在不包括第二离子的第一离子的注入区域中形成掩埋氧化物区域。

6. 发明申请

US20080242070A1 INTEGRATION SCHEMES FOR FABRICATING POLYSILICON GATE MOSFET AND HIGH-K DIELECTRIC METAL GATE MOSFET 有权
标题翻译：用于制造多晶硅栅极MOSFET和高K介电金属栅极MOSFET的集成方案
公开(公告)号：US20080242070A1
公开(公告)日：2008-10-02
申请号：US11694104
申请日：2007-03-30
申请人： Tze-chiang Chen , Bruce B. Doris , Rangarajan Jagannathan , Hongwen Yan , Qingyun Yang , Ying Zhang
发明人： Tze-chiang Chen , Bruce B. Doris , Rangarajan Jagannathan , Hongwen Yan , Qingyun Yang , Ying Zhang
IPC分类号： H01L21/3205
CPC分类号： H01L29/4966 , H01L21/28194 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/517
摘要： Multiple integration schemes for manufacturing dual gate semiconductor structures are disclosed. By employing the novel integration schemes, polysilicon gate MOSFETs and high-k dielectric metal gate MOSFETs are formed on the same semiconductor substrate despite differences in the composition of the gate stack and resulting differences in the etch rates. A thin polysilicon layer is used for one type of gate electrodes and a silicon-containing layer are used for the other type of gate electrodes in these integration schemes to balance the different etch rates and to enable etching of the two different gate stacks.
摘要翻译：公开了用于制造双栅极半导体结构的多重集成方案。通过采用新颖的集成方案，尽管栅极堆叠的组成差异以及蚀刻速率的差异，但是在同一半导体衬底上形成多晶硅栅极MOSFET和高k介质金属栅极MOSFET。对于一种类型的栅电极使用薄多晶硅层，并且在这些集成方案中使用含硅层用于其他类型的栅电极，以平衡不同的蚀刻速率并且能够蚀刻两个不同的栅极堆叠。

7. 发明授权

US07315065B2 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates 有权
标题翻译：用于制造绝缘体上硅（SGOI）和绝缘体上（GeI）绝缘体（GOI）基板的方法
公开(公告)号：US07315065B2
公开(公告)日：2008-01-01
申请号：US11481525
申请日：2006-07-06
申请人： Tze-chiang Chen , Guy M. Cohen , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi
发明人： Tze-chiang Chen , Guy M. Cohen , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi
IPC分类号： H01L29/12 , H01L31/036 , H01L71/01 , H01L71/12 , H01L31/309
CPC分类号： H01L21/76254 , H01L31/02327 , H01L31/028 , H01L31/1812 , Y02E10/547
摘要： A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a substrate, a buried insulator layer located atop the substrate, and a Ge-containing layer, preferably pure Ge, located atop the buried insulator layer. In the GOI substrate materials of the present invention, the Ge-containing layer may also be referred to as the GOI film. The GOI film is the layer of the inventive substrate material in which devices can be formed.
摘要翻译：提供了绝缘体上（锗）绝缘体（GOI）衬底材料的方法，通过该方法生产的GOI衬底材料和至少可以包括本发明的GOI衬底材料的各种结构。 GOI衬底材料至少包括衬底，位于衬底顶部的掩埋绝缘体层，以及位于掩埋绝缘体层顶部的优选纯Ge的Ge含有层。在本发明的GOI基板材料中，Ge含有层也可以称为GOI膜。 GOI膜是可以形成器件的本发明的基底材料的层。

8. 发明申请

US20070087454A1 Method of fabricating a magnetic shift register 有权
标题翻译：制造磁移位寄存器的方法
公开(公告)号：US20070087454A1
公开(公告)日：2007-04-19
申请号：US11252384
申请日：2005-10-17
申请人： Tze-chiang Chen , Stuart Parkin
发明人： Tze-chiang Chen , Stuart Parkin
IPC分类号： H01L21/00 , H01L51/40 , H01L21/82 , H01L21/326
CPC分类号： H01L29/82 , G11C11/14 , G11C19/02 , G11C19/0808 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/ or silicon layers. A trench is etched in the multi-layer stack structure. A selective etching process is used to corrugate the walls of trench. A seed layer is applied to the walls and bottom of the trench; the seed layer is covered with a magnetic layer. The trench is filled with an insulating material. A patterned layer is applied and portions of insulating material exposed by the pattern are removed, forming holes. Magnetic material and seed layer exposed in holes is selectively removed. The holes are filled with insulating material and connecting leads are attached to data tracks.
摘要翻译：用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。在多层堆叠结构中蚀刻沟槽。使用选择性蚀刻工艺来使沟槽的壁波纹化。种子层施加到沟槽的壁和底部; 种子层被磁性层覆盖。沟槽填充绝缘材料。施加图案层，去除由图案露出的部分绝缘材料，形成孔。选择性地除去暴露在孔中的磁性材料和种子层。孔中填充绝缘材料，连接引线连接到数据轨道。

9. 发明申请

US20050186686A1 METHOD OF FABRICATING DATA TRACKS FOR USE IN A MAGNETIC SHIFT REGISTER MEMORY DEVICE 失效
标题翻译：用于在磁移位置存储器件中使用的数据轨迹的方法
公开(公告)号：US20050186686A1
公开(公告)日：2005-08-25
申请号：US10788190
申请日：2004-02-25
申请人： Tze-chiang Chen , Stuart Parkin
发明人： Tze-chiang Chen , Stuart Parkin
IPC分类号： G11C11/15 , G11C19/02 , G11C19/08 , H01L21/00
CPC分类号： G11C19/02 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nm×100 nm are etched in this multilayered stack of alternating layers. Vias may be etched form smooth or notched walls. Vias are filled by electroplating layers of alternating types of ferromagnetic or ferrimagnetic metals. The alternating ferromagnetic or ferrimagnetic layers are comprised of magnetic materials with different magnetization or magnetic exchange or magnetic anisotropies. These different magnetic characteristics allow the pinning of magnetic domain walls at the boundaries between these layers. Alternatively, vias are filled with a homogeneous ferromagnetic material. Magnetic domain walls are formed by the discontinuity in the ferromagnetic or ferromagnetic material that occurs at the notches or at the protuberances along the via walls.
摘要翻译：用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。在该多层交替层中蚀刻约10微米高的具有100nm×100nm量级的横截面的通孔。通孔可能被蚀刻形成平滑或缺口的墙壁。通孔由交替类型的铁磁或亚铁磁性金属的电镀层填充。交替的铁磁或亚铁磁层由具有不同磁化或磁交换或磁各向异性的磁性材料组成。这些不同的磁特性允许磁畴壁在这些层之间的边界处的钉扎。或者，通孔用均匀的铁磁材料填充。磁畴壁由铁氧体或铁磁材料中的不连续部分形成，这些不规则发生在沿着通孔壁的凹口或凸起处。

10. 发明授权

US06812114B2 Patterned SOI by formation and annihilation of buried oxide regions during processing 失效
标题翻译：在加工期间通过掩埋氧化物区域的形成和湮灭的图案化SOI
公开(公告)号：US06812114B2
公开(公告)日：2004-11-02
申请号：US10119931
申请日：2002-04-10
申请人： Tze-chiang Chen , Devendra K. Sadana
发明人： Tze-chiang Chen , Devendra K. Sadana
IPC分类号： H01L2176
CPC分类号： H01L21/76243
摘要： A method of fabricating a silicon-on-insulator (SOI) substrate including an ultra-thin top Si-containing layer and at least one patterned buried semi-insulating or insulating region having well defined edges is provided. The method includes a step of implanting first ions into a surface of a Si-containing substrate so as to form a first implant region of the first ions in the Si-containing substrate. Following the implantation of first ions, a first annealing step is performed which forms a buried semi-insulating or insulating region within the Si-containing substrate. Next, second ions that are insoluble in the semi-insulating or insulating region are selectively implanted into portions of the buried semi-insulating or insulating region. After the selective implant step, a second annealing step is performed which recrystallizes the buried semi-insulating or insulating region that includes second ions to the same crystal structure as the original Si-containing substrate.
摘要翻译：提供了一种制造绝缘体上硅（SOI）衬底的方法，其包括超薄顶层含Si层和至少一个具有良好限定边缘的图案化掩埋半绝缘或绝缘区域。该方法包括将第一离子注入到含Si衬底的表面中以便在含Si衬底中形成第一离子的第一注入区的步骤。在注入第一离子之后，进行第一退火步骤，其在含Si衬底内形成掩埋的半绝缘或绝缘区域。接下来，将不溶于半绝缘或绝缘区域的第二离子选择性地注入埋入半绝缘或绝缘区域的部分。在选择性注入步骤之后，执行第二退火步骤，其将包含第二离子的掩埋半绝缘或绝缘区域再结晶到与原始的含Si衬底相同的晶体结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式