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1. 发明申请

US20050023149A1 Plating apparatus, plating method and substrate processing apparatus 审中-公开
标题翻译：电镀装置，电镀方法和基板处理装置
公开(公告)号：US20050023149A1
公开(公告)日：2005-02-03
申请号：US10860115
申请日：2004-06-04
申请人： Tsutomu Nakada , Junji Kunisawa , Hiroyuki Kanda , Mizuki Nagai , Satoru Yamamoto , Koji Mishima , Shinya Morisawa , Seiji Katsuoka , Natsuki Makino , Yukio Fukunaga
发明人： Tsutomu Nakada , Junji Kunisawa , Hiroyuki Kanda , Mizuki Nagai , Satoru Yamamoto , Koji Mishima , Shinya Morisawa , Seiji Katsuoka , Natsuki Makino , Yukio Fukunaga
IPC分类号： C25D5/00 , C25D7/12 , C25D17/06
CPC分类号： C25D17/001 , C25D7/123 , C25D17/06
摘要： The present invention provides a plating apparatus which uses an insoluble anode and which can perform plating of a substrate stably while preventing oxygen gas, generated due to the use of the insoluble anode, from causing defects in the substrate. The plating apparatus includes: a substrate holder for holding a substrate; a cathode section including a seal ring for contacting a peripheral portion of a surface, to be plated, of the substrate held by the substrate holder to seal the peripheral portion water-tightly, and a cathode for contacting the substrate to supply current to the substrate; a vertically-movable electrode head provided above the cathode section, including an anode chamber housing an anode made of an insoluble material and having a bottom opening closed with a water-permeable porous member; a plating solution injection section for injecting a plating solution between the anode and the surface, to be plated, of the substrate held by the substrate holder; a power source for applying a plating voltage between the cathode and the anode; and a gas discharge line for discharging a gas from the anode chamber.
摘要翻译：本发明提供一种电镀装置，其使用不溶性阳极，并且可以在防止由于使用不溶性阳极而产生的氧气导致基板中的缺陷的同时稳定地进行基板的电镀。电镀装置包括：用于保持基板的基板保持件; 阴极部分，包括用于接触被基板保持器保持的基板的周边部分的密封环，以密封周边部分，以及用于接触基板以向基板供应电流的阴极 ; 设置在所述阴极部分上方的可垂直移动的电极头，包括容纳由不溶性材料制成的阳极并且具有用透水性多孔构件封闭的底部开口的阳极室; 电镀溶液注入部，用于在被基板保持器保持的基板的阳极和要被电镀的表面之间注入电镀液; 用于在阴极和阳极之间施加电镀电压的电源; 以及用于从阳极室排出气体的气体排出管线。

2. 发明申请

US20050155865A1 Electrolytic processing apparatus and method 审中-公开
标题翻译：电解处理装置及方法
公开(公告)号：US20050155865A1
公开(公告)日：2005-07-21
申请号：US10845429
申请日：2004-05-14
申请人： Koji Mishima , Keisuke Namiki , Masao Hodai , Junji Kunisawa , Natsuki Makino , Yukio Fukunaga
发明人： Koji Mishima , Keisuke Namiki , Masao Hodai , Junji Kunisawa , Natsuki Makino , Yukio Fukunaga
IPC分类号： C25D7/12 , C25B9/00 , C25D17/00 , C25D17/02 , C25D19/00 , C25D21/00
CPC分类号： C25D17/00 , C25D17/02
摘要： There is provided an electrolytic processing apparatus and method which can produce products having various specifications with enhanced productivity, thus reducing the production cost, and which can respond flexibly to the movement toward finer interconnects in semiconductor devices. An electrolytic processing apparatus according to the present invention includes: an electrolytic processing unit including a substrate holder for holding a substrate, and a counter electrode plate disposed opposite the substrate held by the substrate holder, said electrolytic processing unit carrying out electrolytic processing by filling the space between the substrate held by the substrate holder and the counter electrode plate with an electrolysis solution while feeding electricity; and a plurality of electrolysis solution supply facilities for supplying different types of electrolysis solutions; wherein the electrolytic processing unit is selectively connectable to one of the plurality of electrolysis solution supply facilities.
摘要翻译：提供一种电解处理装置和方法，其能够生产具有提高的生产率的各种规格的产品，从而降低生产成本，并且可以灵活地响应于朝向半导体器件中更精细的互连的移动。根据本发明的电解处理装置包括：电解处理单元，包括用于保持基板的基板保持器和与由基板保持器保持的基板相对设置的对置电极板，所述电解处理单元通过填充电解处理单元进行电解处理在供电的同时由衬底保持器保持的衬底与电极板之间的电解槽的间隔; 以及用于供给不同种类的电解液的多个电解液供给装置; 其中所述电解处理单元可选择性地连接到所述多个电解溶液供应设备中的一个。

3. 发明申请

US20070034526A1 Electrolytic processing apparatus and method 审中-公开
标题翻译：电解处理装置及方法
公开(公告)号：US20070034526A1
公开(公告)日：2007-02-15
申请号：US11202684
申请日：2005-08-12
申请人： Natsuki Makino , Junji Kunisawa , Keisuke Namiki , Yukio Fukunaga , Katsuyuki Musaka , Ray Fang , Emanuel Cooper , John Cotte , Hariklia Deligianni , Keith Kwietniak , Brett Baker-O'Neal , Matteo Flotta , Philippe Vereecken
发明人： Natsuki Makino , Junji Kunisawa , Keisuke Namiki , Yukio Fukunaga , Katsuyuki Musaka , Ray Fang , Emanuel Cooper , John Cotte , Hariklia Deligianni , Keith Kwietniak , Brett Baker-O'Neal , Matteo Flotta , Philippe Vereecken
IPC分类号： B23H3/00
CPC分类号： B23H5/08 , C25F3/02 , C25F7/00
摘要： An electrolytic processing apparatus can planarize uniformly over an entire surface of a substrate under a low pressure without any damages to the substrate. The electrolytic processing apparatus has a substrate holder configured to hold and rotate a substrate having a metal film formed on a surface of the substrate and an electrolytic processing unit configured to perform an electrolytic process on the substrate held by the substrate holder. The electrolytic processing unit has a rotatable processing electrode, a polishing pad attached to the rotatable processing electrode, and a pressing mechanism configured to press the polishing pad against the substrate. The electrolytic processing unit also has a liquid supply mechanism configured to supply an electrolytic processing liquid between the substrate and the rotatable processing electrode, a relative movement mechanism operable to move the substrate and the rotatable processing electrode relative to each other, and a power supply configured to applying a voltage between the rotatable processing electrode and the metal film of the substrate so that the rotatable processing electrode serves as a cathode and the metal film of the substrate serves as an anode.
摘要翻译：电解处理装置可以在低压下在基板的整个表面上均匀地平坦化，而不会对基板造成任何损坏。所述电解处理装置具有基板保持件，所述基板保持器被构造成保持和旋转形成在所述基板的表面上的金属膜的基板和被配置为在由所述基板保持器保持的所述基板上进行电解处理的电解处理单元。电解处理单元具有可旋转的处理电极，附接到可旋转处理电极的抛光垫，以及被配置为将抛光垫压靠在基板上的按压机构。电解处理单元还具有：液体供给机构，被构造成在基板和可旋转处理电极之间提供电解处理液体;相对移动机构，其可操作以相对于彼此移动基板和可旋转处理电极;电源配置在可旋转处理电极和基板的金属膜之间施加电压，使得可旋转处理电极用作阴极，并且基板的金属膜用作阳极。

4. 发明申请

US20070289604A1 Substrate Processing Apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20070289604A1
公开(公告)日：2007-12-20
申请号：US11587974
申请日：2005-04-27
申请人： Yukio Fukunaga , Akira Susaki , Junji Kunisawa , Hiroyuki Ueyama , Shohei Shima , Akira Fukunaga , Hideki Tateishi , Junko Mine
发明人： Yukio Fukunaga , Akira Susaki , Junji Kunisawa , Hiroyuki Ueyama , Shohei Shima , Akira Fukunaga , Hideki Tateishi , Junko Mine
IPC分类号： C23G1/02 , B08B3/00 , G05D23/00 , G05D99/00
CPC分类号： H01L21/76838 , H01L21/02063 , H01L21/02068 , H01L21/67253
摘要： To provide an apparatus and a method capable of supplying a gas containing an evaporated reducing organic compound while strictly controlling the flow rate thereof to process a surface of a metal on a substrate without causing any deterioration of various types of films forming a semiconductor element with a simple apparatus configuration. The apparatus includes a process chamber 10 for keeping a substrate W therein, the process chamber 10 being gastight, an evacuation control system 20 for controlling the pressure in the process chamber 10, and a process gas supply system 30 for supplying a process gas containing a reducing organic compound to the process chamber 10. The process gas supply system 30 has an evaporator 32 keeping liquid material of the reducing organic compound therein and having an evaporating liquid surface S, a process gas pipe 18 for directing the process gas containing the reducing organic compound evaporated in the evaporator 32 into the process chamber 10, and a throttle element 40 disposed in the process gas pipe 18 for controlling the flow rate of the process gas to be supplied to the process chamber 10 by adjusting the opening of the throttle element 40. The opening of the throttle element 40 is so set that the pressure variation in the evaporator 32 can be maintained within a prescribed range.
摘要翻译：提供一种能够提供含有蒸发还原性有机化合物的气体的装置和方法，同时严格控制其流速来处理基板上的金属表面，而不会导致形成半导体元件的各种类型的膜的劣化简单的设备配置。该装置包括用于将基板W保持在其中的处理室10，气密的处理室10，用于控制处理室10中的压力的抽空控制系统20以及用于提供含有将有机化合物还原成处理室10。工艺气体供给系统30具有：蒸发器32，其中还原有机化合物的液体材料保持在其中并具有蒸发的液体表面S;一个工艺气体管道18，用于将含有在蒸发器32中蒸发的还原性有机化合物的工艺气体引导到过程设置在处理气体管道18中的节流元件40，用于通过调节节流元件40的开口来控制供给处理室10的处理气体的流量。节流元件40的开度被设定为使得蒸发器32中的压力变化可以保持在规定范围内。

5. 发明授权

US5950646A Vapor feed supply system 失效
标题翻译：蒸气供料系统
公开(公告)号：US5950646A
公开(公告)日：1999-09-14
申请号：US3947
申请日：1998-01-08
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Yukio Fukunaga , Masahito Abe , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Yukio Fukunaga , Masahito Abe , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Yuji Araki , Hiroyuki Ueyama
IPC分类号： B08B9/00 , C23C16/44 , C23C16/448 , B08B3/10
CPC分类号： C23C16/448 , B08B9/00 , C23C16/4407 , Y10S134/902
摘要： A vapor feed supply system including a vaporizer device and a method of cleaning a vapor flow region employing such a vaporizer device enables thorough cleaning of the system, without having to degrade the overall system vacuum in the process of cleaning the vaporizer device. The method includes defining a cleaning fluid passage having a predetermined withstand pressure by isolating a cleaning region of the vapor flow region, and flowing a cleaning fluid into the cleaning fluid passage under a pressure so as to enable the cleaning fluid to remain in a liquid state at a cleaning temperature of the cleaning region.
摘要翻译：包括蒸发器装置和使用这种蒸发器装置的蒸汽流动区域的清洁方法的蒸汽供给系统能够彻底清洁系统，而不必在清洁蒸发器装置的过程中降低整个系统的真空度。该方法包括通过隔离蒸汽流动区域的清洁区域来限定具有预定耐受压力的清洁流体通道，并且在压力下将清洁流体流入清洁流体通道以使清洁流体保持在液体状态在清洁区域的清洁温度下。

6. 发明授权

US08205625B2 Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method 有权
标题翻译：基板表面处理装置及方法及基板处理装置及方法
公开(公告)号：US08205625B2
公开(公告)日：2012-06-26
申请号：US11987078
申请日：2007-11-27
申请人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
发明人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
IPC分类号： B08B5/00 , B08B13/00
CPC分类号： B24B37/04 , H01L21/02068 , H01L21/02074 , H01L21/76814 , H01L21/76883
摘要： A surface treatment apparatus of a substrate can clean a substrate surface in the air without employing a vacuum apparatus, and can remove a natural oxide film or an organic material, such as BTA, from the substrate surface without resorting to plasma cleaning. The surface treatment apparatus includes: an inert gas supply section for supplying an inert gas to the whole or part of a substrate surface to form an oxygen-blocking zone; a heating section for keeping the substrate surface at a predetermined temperature; and a cleaning gas supply section for supplying a cleaning gas to the oxygen-blocking zone to clean the substrate surface.
摘要翻译：基板的表面处理装置可以在不使用真空装置的情况下清洁空气中的基板表面，并且可以从基板表面去除自然氧化膜或有机材料（例如BTA）而不用等离子体清洗。表面处理装置包括：惰性气体供给部，用于向基板表面的全部或一部分供给惰性气体，形成阻氧区; 用于将基板表面保持在预定温度的加热部分; 以及清洁气体供给部，用于向氧阻挡区域供给清洁气体以清洁基板表面。

7. 发明授权

US06387182B1 Apparatus and method for processing substrate 失效
标题翻译：基板处理装置及方法
公开(公告)号：US06387182B1
公开(公告)日：2002-05-14
申请号：US09517699
申请日：2000-03-02
申请人： Kuniaki Horie , Yukio Fukunaga , Naoaki Ogure , Tsutomu Nakada , Masahito Abe , Mitsunao Shibasaki , Hidenao Suzuki , Yuji Araki , Kiwamu Tsukamoto
发明人： Kuniaki Horie , Yukio Fukunaga , Naoaki Ogure , Tsutomu Nakada , Masahito Abe , Mitsunao Shibasaki , Hidenao Suzuki , Yuji Araki , Kiwamu Tsukamoto
IPC分类号： B05C2100
CPC分类号： C23C16/45574 , C23C16/409 , C23C16/45514 , C23C16/45561 , C23C16/45563 , C23C16/4557
摘要： A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.
摘要翻译：基板处理装置在基板上形成诸如钡/锶钛酸盐或铜箔的高电介质或铁电薄膜，并且具有气体喷射头，用于分别引入包括材料气体的至少两种气体并喷射朝向待处理基板的气体。气体喷射头具有用于分别引入两种气体的至少两个气体通道和用于单独控制流过气体通道的气体的温度的至少两个温度控制装置。

8. 发明申请

US20080124932A1 Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method 有权
标题翻译：基板表面处理装置及方法及基板处理装置及方法
公开(公告)号：US20080124932A1
公开(公告)日：2008-05-29
申请号：US11987078
申请日：2007-11-27
申请人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
发明人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
IPC分类号： H01L21/302 , B08B13/00 , B08B5/00 , C23F1/08
CPC分类号： B24B37/04 , H01L21/02068 , H01L21/02074 , H01L21/76814 , H01L21/76883
摘要： An surface treatment apparatus of a substrate can clean a substrate surface in the air without employing a vacuum apparatus, and can remove a natural oxide film or an organic material, such as BTA, from the substrate surface without resorting to plasma cleaning. The surface treatment apparatus includes: an inert gas supply section for supplying an inert gas to the whole or part of a substrate surface to form an oxygen-blocking zone; a heating section for keeping the substrate surface at a predetermined temperature; and a cleaning gas supply section for supplying a cleaning gas to the oxygen-blocking zone to clean the substrate surface.
摘要翻译：基板的表面处理装置可以在不使用真空装置的情况下清洁空气中的基板表面，并且可以从基板表面去除自然氧化膜或有机材料（例如BTA），而不需要进行等离子体清洗。表面处理装置包括：惰性气体供给部，用于向基板表面的全部或一部分供给惰性气体，形成阻氧区; 用于将基板表面保持在预定温度的加热部分; 以及清洁气体供给部，用于向氧阻挡区域供给清洁气体以清洁基板表面。

9. 发明授权

US6022413A Thin-film vapor deposition apparatus 失效
标题翻译：薄膜蒸镀装置
公开(公告)号：US6022413A
公开(公告)日：2000-02-08
申请号：US664544
申请日：1996-06-17
申请人： Hiroyuki Shinozaki , Yukio Fukunaga , Takeshi Murakami , Kiwamu Tsukamoto
发明人： Hiroyuki Shinozaki , Yukio Fukunaga , Takeshi Murakami , Kiwamu Tsukamoto
IPC分类号： C23C16/458 , C23C16/46 , C30B25/10 , C30B25/12 , C23C14/00 , C23C16/00
CPC分类号： C30B25/10 , C23C16/4584 , C23C16/46 , C30B25/12
摘要： A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmosphere in the reaction chamber, and the temperature of the substrate is also adjusted independently of the temperature of the atmosphere in the reaction chamber, while the substrate is being rotated at a high speed in the reaction chamber. Reactant gases required to deposit a thin film on the substrate are ejected from a reactant gas elector head toward the substrate in the reaction chamber. Remaining and excessive gases are discharged out of the reaction chamber.
摘要翻译：薄膜蒸镀装置具有用于在与环境气氛隔离的气氛中保持基板的反应室。为了在基板上沉积薄膜，调整反应室内壁的温度以控制反应室中的气氛的温度，并且基板的温度也独立于大气温度反应室，同时基板在反应室中高速旋转。在基板上沉积薄膜所需的反应物气体从反应气体选择器头向反应室内的基板喷出。剩余的和过量的气体从反应室排出。

10. 发明授权

US5950925A Reactant gas ejector head 失效
标题翻译：反应物气体喷射头
公开(公告)号：US5950925A
公开(公告)日：1999-09-14
申请号：US948579
申请日：1997-10-10
申请人： Yukio Fukunaga , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Masao Saitoh
发明人： Yukio Fukunaga , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Masao Saitoh
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572
摘要： A reactant gas ejector head enables a process gas mixture of a uniform concentration and composition to be delivered to the surface of a substrate in a stable and uniform thermodynamic state by preventing premature reactions to occur along the gas delivery route. The reactant gas ejector head comprises an ejection head body having a back plate and a nozzle plate for defining a gas mixing space therebetween. The nozzle plate has numerous gas ejection nozzles. A gas supply pipe is communicated with the ejection head body through a center region of the back plate so as to separately introduce at least two types of gaseous substances into the mixing space. Gas distribution passages are formed between the back plate and the nozzle plate in such a way as to guide the at least two types of gaseous substances from the gas supply pipe to be directed separately towards peripheral regions of the gas mixing space.
摘要翻译：反应物气体喷射头能够使均匀浓度和组成的工艺气体混合物通过防止沿气体输送路线发生过早反应而以稳定和均匀的热力学状态输送到基底表面。反应物气体喷射头包括具有背板和用于限定其间的气体混合空间的喷嘴板的喷射头本体。喷嘴板具有许多气体喷射喷嘴。气体供给管通过背板的中心区域与喷射头本体连通，以将至少两种类型的气态物质分别引入混合空间。在背板和喷嘴板之间形成气体分配通道，以将来自气体供给管的至少两种类型的气体物质引导到气体混合空间的周边区域。

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