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1. 发明授权

US5728223A Reactant gas ejector head and thin-film vapor deposition apparatus 失效
标题翻译：反应物气体喷射头和薄膜蒸镀装置
公开(公告)号：US5728223A
公开(公告)日：1998-03-17
申请号：US662763
申请日：1996-06-10
申请人： Takeshi Murakami , Noriyuki Takeuchi , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Yukio Fukunaga , Akihisa Hongo
发明人： Takeshi Murakami , Noriyuki Takeuchi , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Yukio Fukunaga , Akihisa Hongo
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45512 , C23C16/455 , C23C16/45565 , C23C16/4557 , C30B25/14
摘要： A reactant gas ejector head in a thin-film vapor deposition apparatus includes at least two reactant gas inlet passages for introducing reactant gases, a gas mixing chamber for mixing reactant gases introduced from the reactant gas inlet passages, and a nozzle disposed downstream of the gas mixing chamber for rectifying the mixed gases from the gas mixing chamber into a uniform flow and applying the uniform flow to a substrate.
摘要翻译：薄膜气相沉积设备中的反应气体喷射头包括至少两个用于引入反应气体的反应气体入口通道，用于混合从反应气体入口通道引入的反应气体的气体混合室和设置在气体下游的喷嘴混合室，用于将来自气体混合室的混合气体整流成均匀的流动并将均匀的流动施加到基底。

2. 发明授权

US06176929B1 Thin-film deposition apparatus 失效
标题翻译：薄膜沉积装置
公开(公告)号：US06176929B1
公开(公告)日：2001-01-23
申请号：US09118177
申请日：1998-07-17
申请人： Yukio Fukunaga , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Kuniaki Horie , Hiroyuki Ueyama , Takeshi Murakami
发明人： Yukio Fukunaga , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Kuniaki Horie , Hiroyuki Ueyama , Takeshi Murakami
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/4557 , C23C16/45591 , C23C16/46
摘要： A compact thin-film deposition apparatus can promote a stable growth of a high quality thin-film product of uniform quality. The apparatus comprises a vacuum-tight deposition chamber enclosing a substrate holding device for holding a substrate. An elevator device for moving the substrate holding device and a gas showering head for flowing a film forming gas towards the substrate are provided. A transport opening and an exhaust opening are provided on a wall section of the deposition chamber at a height corresponding to the transport position and the deposition position, respectively. The deposition chamber is provided with a flow guiding member, and the flow guiding member comprises a cylindrical member to surround an elevating path of the substrate holding device and a first ring member to vertically divide a chamber space at a height between the exhaust opening and the transport opening.
摘要翻译：紧凑的薄膜沉积装置可以促进质量均匀的高质量薄膜产品的稳定生长。该装置包括一个真空密封的沉积室，其包围用于保持基板的基板保持装置。提供了一种用于移动基板保持装置的电梯装置和用于使成膜气体朝向基板流动的气体淋浴头。输送开口和排气口分别设置在沉积室的壁部分上，其高度分别对应于输送位置和沉积位置。沉积室设置有导流构件，并且流动引导构件包括圆筒构件以包围基板保持装置的升降路径和第一环构件，以在排气口和排气口之间的高度垂直分隔腔室空间运输开放。

3. 发明授权

US6022413A Thin-film vapor deposition apparatus 失效
标题翻译：薄膜蒸镀装置
公开(公告)号：US6022413A
公开(公告)日：2000-02-08
申请号：US664544
申请日：1996-06-17
申请人： Hiroyuki Shinozaki , Yukio Fukunaga , Takeshi Murakami , Kiwamu Tsukamoto
发明人： Hiroyuki Shinozaki , Yukio Fukunaga , Takeshi Murakami , Kiwamu Tsukamoto
IPC分类号： C23C16/458 , C23C16/46 , C30B25/10 , C30B25/12 , C23C14/00 , C23C16/00
CPC分类号： C30B25/10 , C23C16/4584 , C23C16/46 , C30B25/12
摘要： A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmosphere in the reaction chamber, and the temperature of the substrate is also adjusted independently of the temperature of the atmosphere in the reaction chamber, while the substrate is being rotated at a high speed in the reaction chamber. Reactant gases required to deposit a thin film on the substrate are ejected from a reactant gas elector head toward the substrate in the reaction chamber. Remaining and excessive gases are discharged out of the reaction chamber.
摘要翻译：薄膜蒸镀装置具有用于在与环境气氛隔离的气氛中保持基板的反应室。为了在基板上沉积薄膜，调整反应室内壁的温度以控制反应室中的气氛的温度，并且基板的温度也独立于大气温度反应室，同时基板在反应室中高速旋转。在基板上沉积薄膜所需的反应物气体从反应气体选择器头向反应室内的基板喷出。剩余的和过量的气体从反应室排出。

4. 发明授权

US5950646A Vapor feed supply system 失效
标题翻译：蒸气供料系统
公开(公告)号：US5950646A
公开(公告)日：1999-09-14
申请号：US3947
申请日：1998-01-08
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Yukio Fukunaga , Masahito Abe , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Yukio Fukunaga , Masahito Abe , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Yuji Araki , Hiroyuki Ueyama
IPC分类号： B08B9/00 , C23C16/44 , C23C16/448 , B08B3/10
CPC分类号： C23C16/448 , B08B9/00 , C23C16/4407 , Y10S134/902
摘要： A vapor feed supply system including a vaporizer device and a method of cleaning a vapor flow region employing such a vaporizer device enables thorough cleaning of the system, without having to degrade the overall system vacuum in the process of cleaning the vaporizer device. The method includes defining a cleaning fluid passage having a predetermined withstand pressure by isolating a cleaning region of the vapor flow region, and flowing a cleaning fluid into the cleaning fluid passage under a pressure so as to enable the cleaning fluid to remain in a liquid state at a cleaning temperature of the cleaning region.
摘要翻译：包括蒸发器装置和使用这种蒸发器装置的蒸汽流动区域的清洁方法的蒸汽供给系统能够彻底清洁系统，而不必在清洁蒸发器装置的过程中降低整个系统的真空度。该方法包括通过隔离蒸汽流动区域的清洁区域来限定具有预定耐受压力的清洁流体通道，并且在压力下将清洁流体流入清洁流体通道以使清洁流体保持在液体状态在清洁区域的清洁温度下。

5. 发明授权

US5950925A Reactant gas ejector head 失效
标题翻译：反应物气体喷射头
公开(公告)号：US5950925A
公开(公告)日：1999-09-14
申请号：US948579
申请日：1997-10-10
申请人： Yukio Fukunaga , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Masao Saitoh
发明人： Yukio Fukunaga , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Masao Saitoh
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572
摘要： A reactant gas ejector head enables a process gas mixture of a uniform concentration and composition to be delivered to the surface of a substrate in a stable and uniform thermodynamic state by preventing premature reactions to occur along the gas delivery route. The reactant gas ejector head comprises an ejection head body having a back plate and a nozzle plate for defining a gas mixing space therebetween. The nozzle plate has numerous gas ejection nozzles. A gas supply pipe is communicated with the ejection head body through a center region of the back plate so as to separately introduce at least two types of gaseous substances into the mixing space. Gas distribution passages are formed between the back plate and the nozzle plate in such a way as to guide the at least two types of gaseous substances from the gas supply pipe to be directed separately towards peripheral regions of the gas mixing space.
摘要翻译：反应物气体喷射头能够使均匀浓度和组成的工艺气体混合物通过防止沿气体输送路线发生过早反应而以稳定和均匀的热力学状态输送到基底表面。反应物气体喷射头包括具有背板和用于限定其间的气体混合空间的喷嘴板的喷射头本体。喷嘴板具有许多气体喷射喷嘴。气体供给管通过背板的中心区域与喷射头本体连通，以将至少两种类型的气态物质分别引入混合空间。在背板和喷嘴板之间形成气体分配通道，以将来自气体供给管的至少两种类型的气体物质引导到气体混合空间的周边区域。

6. 发明授权

US5935337A Thin-film vapor deposition apparatus 失效
标题翻译：薄膜蒸镀装置
公开(公告)号：US5935337A
公开(公告)日：1999-08-10
申请号：US634847
申请日：1996-04-19
申请人： Noriyuki Takeuchi , Takeshi Murakami , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Masaru Nakaniwa , Naoki Matsuda
发明人： Noriyuki Takeuchi , Takeshi Murakami , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Masaru Nakaniwa , Naoki Matsuda
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , C23C16/00
CPC分类号： C23C16/4557 , C23C16/45565 , C23C16/52
摘要： A thin-film vapor deposition apparatus has a reaction casing defining a reaction chamber, a stage for supporting a substrate, the stage being disposed in the reaction chamber, and a shower head supported on the reaction casing in confronting relation to the stage for discharging a material gas toward the substrate on the stage for depositing a thin film on the substrate. A plurality of flow path systems are disposed in various regions of the shower head and the reaction casing for passage therethrough a heating medium to control the temperatures of the regions under the control of a temperature controller.
摘要翻译：薄膜蒸镀装置具有限定反应室的反应壳体，用于支撑基板的台，设置在反应室中的台以及与用于排出反应室的台相对的支撑在反应壳体上的喷头原料气体朝向在基板上沉积薄膜的载物台上的基板。多个流路系统设置在淋浴喷头和反应壳体的各个区域中，用于通过加热介质以控制温度控制器控制下的区域的温度。

7. 发明申请

US20080220621A1 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20080220621A1
公开(公告)日：2008-09-11
申请号：US12115308
申请日：2008-05-05
申请人： Hiroyuki Shinozaki , Yasushi Kojima , Shunichi Aiyoshizawa , Kiwamu Tsukamoto
发明人： Hiroyuki Shinozaki , Yasushi Kojima , Shunichi Aiyoshizawa , Kiwamu Tsukamoto
IPC分类号： H01L21/00
CPC分类号： G03F7/7075 , G03F7/70808 , G03F7/70991 , G03F9/7003 , G03F9/7011 , H01L21/67017 , H01L21/67225 , H01L21/67248 , H01L21/67748 , H01L21/68 , H01L21/681
摘要： A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading/unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading/unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere. The exposure treatment chamber is disposed adjacent to and in parallel with the direction of the reduced pressure atmosphere conveyance chamber and performs an exposure treatment for the substrate under treatment.
摘要翻译：处理基板的基板处理装置具有界面部，基板装载部，减压气体输送室，曝光处理室。接口部分具有能够将处理中的基板自由地装载和卸载到设备中的输送机构，反之亦然。处理后的基板可以通过界面部分的输送机构沿一个方向装载和卸载基板装载/卸载部分。减压气氛输送室与基板装载/卸载部的方向相邻且垂直的方向配置，具有在减压气氛下处理基板的输送机构。暴露处理室与减压气体输送室的方向相邻且平行地配置，对被处理基板进行曝光处理。

8. 发明申请

US20070095791A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20070095791A1
公开(公告)日：2007-05-03
申请号：US11614367
申请日：2006-12-21
申请人： Hiroyuki Shinozaki , Yasushi Kojima , Shunichi Aiyoshizawa , Kiwamu Tsukamoto
发明人： Hiroyuki Shinozaki , Yasushi Kojima , Shunichi Aiyoshizawa , Kiwamu Tsukamoto
IPC分类号： C03C15/00 , C23F1/00 , C23C16/00 , H01L21/306 , B44C1/22 , C03C25/68
CPC分类号： G03F7/7075 , G03F7/70808 , G03F7/70991 , G03F9/7003 , G03F9/7011 , H01L21/67017 , H01L21/67225 , H01L21/67248 , H01L21/67748 , H01L21/68 , H01L21/681
摘要： A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading/unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading/unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere. The exposure treatment chamber is disposed adjacent to and in parallel with the direction of the reduced pressure atmosphere conveyance chamber and performs an exposure treatment for the substrate under treatment.

9. 发明申请

US20060169208A1 Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20060169208A1
公开(公告)日：2006-08-03
申请号：US11322270
申请日：2006-01-03
申请人： Hiroyuki Shinozaki , Yasushi Kojima , Shunichi Aiyoshizawa , Kiwamu Tsukamoto
发明人： Hiroyuki Shinozaki , Yasushi Kojima , Shunichi Aiyoshizawa , Kiwamu Tsukamoto
IPC分类号： C23C16/00 , H01L21/31 , H01L21/469
CPC分类号： G03F7/7075 , G03F7/70808 , G03F7/70991 , G03F9/7003 , G03F9/7011 , H01L21/67017 , H01L21/67225 , H01L21/67248 , H01L21/67748 , H01L21/68 , H01L21/681
摘要： A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading/unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading/unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere. The exposure treatment chamber is disposed adjacent to and in parallel with the direction of the reduced pressure atmosphere conveyance chamber and performs an exposure treatment for the substrate under treatment.
摘要翻译：处理基板的基板处理装置具有界面部，基板装载部，减压气体输送室，曝光处理室。接口部分具有能够将处理中的基板自由地装载和卸载到设备中的输送机构，反之亦然。处理后的基板可以通过界面部分的输送机构沿一个方向装载和卸载基板装载/卸载部分。减压气氛输送室与基板装载/卸载部的方向相邻且垂直的方向配置，具有在减压气氛下处理基板的输送机构。暴露处理室与减压气体输送室的方向相邻且平行地配置，对被处理基板进行曝光处理。

10. 发明申请

US20070092651A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20070092651A1
公开(公告)日：2007-04-26
申请号：US11614224
申请日：2006-12-21
申请人： Hiroyuki Shinozaki , Yasushi Kojima , Shunichi Aiyoshizawa , Kiwamu Tsukamoto
发明人： Hiroyuki Shinozaki , Yasushi Kojima , Shunichi Aiyoshizawa , Kiwamu Tsukamoto
IPC分类号： B05D3/00 , C23C16/52 , C23C14/00
CPC分类号： G03F7/7075 , G03F7/70808 , G03F7/70991 , G03F9/7003 , G03F9/7011 , H01L21/67017 , H01L21/67225 , H01L21/67248 , H01L21/67748 , H01L21/68 , H01L21/681
摘要： A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading/unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading/unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere. The exposure treatment chamber is disposed adjacent to and in parallel with the direction of the reduced pressure atmosphere conveyance chamber and performs an exposure treatment for the substrate under treatment.

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