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1. 发明授权

US06787817B2 Compound semiconductor having a doped layer between the gate and an ohmic contact of an active region 有权
标题翻译：化合物半导体在栅极与有源区的欧姆接触之间具有掺杂层
公开(公告)号：US06787817B2
公开(公告)日：2004-09-07
申请号：US10318244
申请日：2002-12-13
申请人： Hiroyuki Takazawa , Shinichiro Takatani , Masao Yamane , Masayoshi Kobayashi
发明人： Hiroyuki Takazawa , Shinichiro Takatani , Masao Yamane , Masayoshi Kobayashi
IPC分类号： H01L310328
CPC分类号： H01L29/66462 , H01L29/0657 , H01L29/7783
摘要： The present invention provides a semiconductor device for high frequency application having a high breakdown voltage and the method of manufacturing thereof. A region including a first conductivity type high impurity concentration semiconductor and a region including a first conductivity type low impurity concentration semiconductor are provided from an ohmic layer side at the side far from a semiconductor substrate of the end surface of a barrier layer opposite the semiconductor substrate and between the ohmic layer and a gate electrode. The sheet impurity concentration of the region including a first conductivity type low impurity concentration semiconductor is set to be lower than that between the bottom surface of the gate electrode at the side of the semiconductor substrate and the end surface of the channel layer opposite the semiconductor substrate. The sheet impurity concentration of the region including a first conductivity type high impurity concentration semiconductor is set to be higher than that of the region including a first conductivity type low impurity concentration semiconductor.
摘要翻译：本发明提供一种具有高击穿电压的高频应用的半导体器件及其制造方法。包括第一导电型高杂质浓度半导体的区域和包括第一导电型低杂质浓度半导体的区域从远离半导体衬底的阻挡层的端面的半导体衬底的一侧的欧姆层侧提供并且在欧姆层和栅电极之间。包括第一导电型低杂质浓度半导体的区域的片状杂质浓度被设定为低于半导体衬底侧的栅电极的底表面和与半导体衬底相对的沟道层的端面之间的片状杂质浓度。将包括第一导电型高杂质浓度半导体的区域的片状杂质浓度设定为高于包含第一导电型低杂质浓度半导体的区域的片状杂质浓度。

2. 发明申请

US20050116253A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050116253A1
公开(公告)日：2005-06-02
申请号：US10989388
申请日：2004-11-17
申请人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
发明人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
IPC分类号： H01L21/338 , H01L21/8252 , H01L27/06 , H01L29/778 , H01L29/812 , H01L29/739
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605
摘要： The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.
摘要翻译：本发明将用作射频模块中的开关元件的HEMT元件小型化。单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

3. 发明授权

US07307298B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07307298B2
公开(公告)日：2007-12-11
申请号：US10989388
申请日：2004-11-17
申请人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
发明人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
IPC分类号： H01L29/80 , H01L31/12
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605
摘要： The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.
摘要翻译：本发明将用作射频模块中的开关元件的HEMT元件小型化。单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

4. 发明授权

US08169008B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08169008B2
公开(公告)日：2012-05-01
申请号：US12909300
申请日：2010-10-21
申请人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
发明人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
IPC分类号： H01L31/00 , H01L31/113
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605
摘要： The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.
摘要翻译：本发明将用作射频模块中的开关元件的HEMT元件小型化。单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

5. 发明申请

US20110031533A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110031533A1
公开(公告)日：2011-02-10
申请号：US12909300
申请日：2010-10-21
申请人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
发明人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605
摘要： The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.
摘要翻译：本发明将用作射频模块中的开关元件的HEMT元件小型化。单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

6. 发明授权

US07838914B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07838914B2
公开(公告)日：2010-11-23
申请号：US11979565
申请日：2007-11-06
申请人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
发明人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
IPC分类号： H01L31/00 , H01L31/113
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605
摘要： The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.
摘要翻译：本发明将用作射频模块中的开关元件的HEMT元件小型化。单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

7. 发明申请

US20080073671A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080073671A1
公开(公告)日：2008-03-27
申请号：US11979565
申请日：2007-11-06
申请人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
发明人： Masao Yamane , Atsushi Kurokawa , Shinya Osakabe , Eigo Tange , Yasushi Shigeno , Hiroyuki Takazawa
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605
摘要： The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.
摘要翻译：本发明将用作射频模块中的开关元件的HEMT元件小型化。单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

8. 发明授权

US07439622B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07439622B2
公开(公告)日：2008-10-21
申请号：US11581587
申请日：2006-10-17
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L23/48 , H01L23/52 , H01R11/00
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

9. 发明申请

US20050156756A1 Vehicular communications apparatus and method 有权
标题翻译：车载通信装置及方法
公开(公告)号：US20050156756A1
公开(公告)日：2005-07-21
申请号：US11030290
申请日：2005-01-07
申请人： Susumu Fujita , Toru Takagi , Masao Yamane , Toshiro Muramatsu , Okihiko Nakayama
发明人： Susumu Fujita , Toru Takagi , Masao Yamane , Toshiro Muramatsu , Okihiko Nakayama
IPC分类号： G08G1/09 , G08G1/123 , G08G1/16 , H04B7/26 , G08G1/00
CPC分类号： G08G1/123
摘要： A vehicular communications apparatus is configured to calculate information on relative positions, relative velocities, and relative moving directions between own vehicle and other vehicles at a point such as a junction where other vehicles tend to affect running of the own vehicle, and to search for and decide other vehicles which are to be opponents of radio communications, based on a calculated result, and communication opponents are decided from among the searched other vehicles, and radio communications are conducted therewith, and then, the vehicular communications apparatus obtains information on the other vehicles, in a time-sequential manner and by radio communications, and present the information to a driver of the own vehicle from time to time, thereby causing the driver to recognize dynamic information on the other vehicles, enabling the own vehicle to smoothly join a flow of traffic at a junction, for example.
摘要翻译：车辆通信装置被配置为在其他车辆倾向于影响本车辆的行驶的点处，计算本车辆与其他车辆之间的相对位置，相对速度和相对移动方向的信息，并且搜索和根据计算结果，决定其他作为无线电通信对手的车辆，并从所搜索到的其他车辆中确定通信对手，并进行无线电通信，然后，车辆通信装置获取关于其他车辆的信息以时间顺序的方式和通过无线电通信，不时地将信息呈现给本车辆的驾驶员，从而使驾驶员识别其他车辆上的动态信息，使得本车能够平稳地加入流例如在交汇处的交通。

10. 发明授权

US06678507B1 Power amplifier system and mobile communication terminal device 失效
标题翻译：功率放大器系统和移动通信终端设备
公开(公告)号：US06678507B1
公开(公告)日：2004-01-13
申请号：US09653623
申请日：2000-08-31
申请人： Atsushi Kurokawa , Masao Yamane
发明人： Atsushi Kurokawa , Masao Yamane
IPC分类号： H01Q1112
CPC分类号： H03F3/245 , H03F3/195 , H03F2200/411
摘要： A power amplifier system has a high frequency power amplifier circuit section employing source-grounded enhancement type n-channel MESFETs for receiving a drain bias voltage and a gate bias voltage of zero volts or positive low potentials supplied from a unipolar power supply, and amplifying a superposed input signal therewith to output an amplified signal indicative of a change in drain currents. An output matching circuit section applies impedance matching to the amplified signal and outputs the resultant signal. A gate bias voltage circuit section supplies a gate bias voltage to the high frequency power amplifier circuit. When a forward direct current gate voltage is applied to a gate terminal with a source terminal coupled to ground, the DC gate voltage becomes greater than or equal to 0.65 volts, the DC gate voltage causing a gate current value per gate width of 100 micrometers to exceed 100 microamperes.
摘要翻译：功率放大器系统具有采用源极接地增强型n沟道MESFET的高频功率放大器电路部分，用于接收从单极电源提供的漏极偏置电压和零伏的栅极偏置电压或正低电位，并且放大叠加输入信号以输出表示漏极电流变化的放大信号。输出匹配电路部分对放大的信号施加阻抗匹配并输出结果信号。栅极偏压电路部分向高频功率放大器电路提供栅极偏置电压。当正向直流栅极电压施加到具有耦合到地的源极端子的栅极端子时，DC栅极电压变得大于或等于0.65伏，DC栅极电压使得每个栅极宽度的栅极电流值为100微米，超过100微安。

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