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1. 发明授权

US5025751A Solid film growth apparatus 失效
标题翻译：固体膜生长装置
公开(公告)号：US5025751A
公开(公告)日：1991-06-25
申请号：US366185
申请日：1989-06-14
申请人： Shinichiro Takatani , Shigeo Goto , Masahiko Kawata , Kenji Hiruma
发明人： Shinichiro Takatani , Shigeo Goto , Masahiko Kawata , Kenji Hiruma
IPC分类号： C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14
CPC分类号： C23C16/4551 , C30B25/02 , C30B25/14 , C30B29/40 , Y10S148/169
摘要： A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.
摘要翻译：一种固体成膜装置，例如MO-MBE（金属有机分子束外延）装置，其中通过开关装置从生长室隔离并连接到原料气体导入管的可排出容器设置在生长室之间用于固体膜，例如化合物半导体和原料气体导入管。至少在固体膜生长期间开关装置关闭时，通过打开和关闭开关装置并抽出容器来控制固体膜的生长。可以防止由于不用于生长的容器中的残留气体对生长的膜产生不期望的影响，因此可以以非常高的可控性进行原料气体截留和引入生长室，并且可以进行膜的可以获得膜之间的界面的优异的突变性，例如化合物半导体的异质结。

2. 发明授权

US5381027A Semiconductor device having a heterojunction and a two dimensional gas as an active layer 失效
标题翻译：具有异质结和二维气体作为有源层的半导体器件
公开(公告)号：US5381027A
公开(公告)日：1995-01-10
申请号：US134622
申请日：1993-10-12
申请人： Toshiyuki Usagawa , Kenji Hiruma , Masahiko Kawata , Shigeo Goto , Katsuhiko Mitani , Masao Yamane , Susumu Takahashi , Tomonori Tanoue , Yoshinori Imamura
发明人： Toshiyuki Usagawa , Kenji Hiruma , Masahiko Kawata , Shigeo Goto , Katsuhiko Mitani , Masao Yamane , Susumu Takahashi , Tomonori Tanoue , Yoshinori Imamura
IPC分类号： H01L21/18 , H01L21/285 , H01L21/331 , H01L21/335 , H01L27/06 , H01L29/737 , H01L29/778 , H01L29/804 , H01L29/784
CPC分类号： H01L29/66318 , H01L21/182 , H01L21/28587 , H01L27/0605 , H01L29/66462 , H01L29/7373 , H01L29/7787
摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by intoduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.
摘要翻译：本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。前者通过应用于其源极和漏极区域的形成来制造通过诸如通过离子注入引起杂质的异质结的紊乱或通过形成由选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。这些半导体器件可以降低源极栅极电阻和寄生基极电阻。本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

3. 发明授权

US5258631A Semiconductor device having a two-dimensional electron gas as an active layer 失效
标题翻译：具有二维电子气体作为活性层的半导体装置
公开(公告)号：US5258631A
公开(公告)日：1993-11-02
申请号：US884878
申请日：1992-05-18
申请人： Toshiyuki Usagawa , Kenji Hiruma , Masahiko Kawata , Shigeo Goto , Katsuhiko Mitani , Masao Yamane , Susumu Takahashi , Tomonori Tanoue , Yoshinori Imamura
发明人： Toshiyuki Usagawa , Kenji Hiruma , Masahiko Kawata , Shigeo Goto , Katsuhiko Mitani , Masao Yamane , Susumu Takahashi , Tomonori Tanoue , Yoshinori Imamura
IPC分类号： H01L21/18 , H01L21/285 , H01L21/331 , H01L21/335 , H01L27/06 , H01L29/737 , H01L29/778 , H01L29/06 , H01L29/167 , H01L29/30 , H01L31/072
CPC分类号： H01L29/66318 , H01L21/182 , H01L21/28587 , H01L27/0605 , H01L29/66462 , H01L29/7373 , H01L29/7787
摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by introduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.
摘要翻译：本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。前者通过应用其源极和漏极区域的形成来制造通过引入杂质例如通过离子注入引起异质结的紊乱的技术或通过形成由选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。这些半导体器件可以降低源极栅极电阻和寄生基极电阻。本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

4. 发明授权

US5668402A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5668402A
公开(公告)日：1997-09-16
申请号：US66635
申请日：1993-05-24
申请人： Kazuhiro Mochizuki , Shigeo Goto , Chushirou Kusano , Masahiko Kawata , Hiroshi Masuda , Katsuhiko Mitani , Susumu Takahashi
发明人： Kazuhiro Mochizuki , Shigeo Goto , Chushirou Kusano , Masahiko Kawata , Hiroshi Masuda , Katsuhiko Mitani , Susumu Takahashi
IPC分类号： H01L29/73 , A61F7/02 , H01L21/20 , H01L21/331 , H01L21/338 , H01L29/04 , H01L29/205 , H01L29/737 , H01L29/812
CPC分类号： H01L29/045 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02505 , H01L21/02532 , H01L21/02546 , H01L21/02609 , A61F2007/0265
摘要： A semiconductor device comprises a semiconductor substrate formed by a first single crystalline semiconductor material and semiconductor layers formed on the semiconductor substrate by a second single crystalline semiconductor material doped with an element which can easily surface segregate. The surface of the semiconductor substrate is formed of a crystalline plane substantially equivalent to a facet plane which is formed on the surface of the second single crystalline semiconductor material if the second single crystalline semiconductor material is epitaxially grown with being doped with the element on a (100) plane of the first single crystalline semiconductor material.
摘要翻译：半导体器件包括由第一单晶半导体材料形成的半导体衬底和通过掺杂有易于表面分离的元件的第二单晶半导体材料形成在半导体衬底上的半导体层。半导体衬底的表面由与第二单晶半导体材料的表面上形成的小平面基本相同的晶面形成，如果第二单晶半导体材料被外延生长，在第 100）平面的第一单晶半导体材料。

5. 发明授权

US5296733A Hetero junction bipolar transistor with improved electrode wiring contact region 失效
标题翻译：具有改进的电极接线区域的异质结双极晶体管
公开(公告)号：US5296733A
公开(公告)日：1994-03-22
申请号：US615381
申请日：1990-11-19
申请人： Chushiroh Kusano , Hiroshi Masuda , Katsuhiko Mitani , Kazuhiro Mochizuki , Masaru Miyazaki , Masahiko Kawata , Susumu Takahashi
发明人： Chushiroh Kusano , Hiroshi Masuda , Katsuhiko Mitani , Kazuhiro Mochizuki , Masaru Miyazaki , Masahiko Kawata , Susumu Takahashi
IPC分类号： H01L29/73 , H01L21/331 , H01L29/205 , H01L29/737 , H01L29/72 , H01L29/06
CPC分类号： H01L29/7371
摘要： A hetero junction bipolar transistor provides a contact area an area between an emitter (or collector) electrode and a wiring formed on the electrode that is larger than that of the emitter (or collector). A variation in voltage applied to an emitter (or collector)-base junctions is prevented and a stable operation of the transistor is attained. In addition, when an etching operation is carried out, an insulation film is formed on a side part of a mask. A patterning of the emitter (or collector) is then carried out and thus an emitter (or collector) having a size approximate to that of the mask is formed.
摘要翻译：异质结双极晶体管提供接触区域，其在发射极（或集电极）电极和形成在电极上的布线之间的面积大于发射极（或集电极）的面积。防止施加到发射极（或集电极） - 基极结的电压变化，并且获得晶体管的稳定操作。另外，当进行蚀刻操作时，在掩模的侧面上形成绝缘膜。然后执行发射极（或集电极）的图案化，因此形成具有接近于掩模的尺寸的发射极（或集电极）。

6. 发明授权

US4212021A Light emitting devices 失效
标题翻译：发光装置
公开(公告)号：US4212021A
公开(公告)日：1980-07-08
申请号：US41318
申请日：1979-05-22
申请人： Yuichi Ono , Mitsuhiro Mori , Makoto Morioka , Kazuhiro Ito , Masahiko Kawata , Kazuhiro Kurata
发明人： Yuichi Ono , Mitsuhiro Mori , Makoto Morioka , Kazuhiro Ito , Masahiko Kawata , Kazuhiro Kurata
IPC分类号： G02B6/42 , H01L33/00 , H01L33/14 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/48 , H01L33/58
CPC分类号： H01L33/20 , G02B6/4202 , H01L33/0025 , H01L33/24 , H01L33/0079 , H01L33/145 , H01L33/38 , H01L33/483 , H01L33/58
摘要： In a prior-art injection type light emitting device which is constructed so that a predetermined range of a p-n junction formed by a semiconductor substrate and an epitaxial layer provided thereon may radiate, a radiation region in the p-n junction becomes larger in area than the region into which current is introduced, on account of the current spreading phenomenon. The construction of a light emitting device free from the phenomenon and a method for manufacturing the light emitting device are disclosed.
摘要翻译：在现有技术的注入型发光器件中，其结构使得由半导体衬底形成的pn结的预定范围和设置在其上的外延层可以辐射，pn结中的辐射区域的面积比区域由于目前的传播现象，引入了电流。公开了一种没有现象的发光器件的结构和用于制造发光器件的方法。

7. 发明授权

US4122486A Semiconductor light-emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US4122486A
公开(公告)日：1978-10-24
申请号：US771576
申请日：1977-02-24
申请人： Yuichi Ono , Makoto Morioka , Kazuhiro Ito , Mitsuhiro Mori , Masahiko Kawata , Kazuhiro Kurata
发明人： Yuichi Ono , Makoto Morioka , Kazuhiro Ito , Mitsuhiro Mori , Masahiko Kawata , Kazuhiro Kurata
IPC分类号： H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/0025
摘要： A light emitting element made of a group III - V compound semiconductor has a p-n junction and a hetero-junction which are identical; the mixing ratio (band gap) of a p-type layer on the light emitting side is sufficiently smaller than that of an n-type layer on the opposite side. The semiconductor light-emitting element is especially useful as a light source, for optical communications, photoexcitation, etc.
摘要翻译：由III-V族化合物半导体制成的发光元件具有相同的p-n结和异质结; 发光侧的p型层的混合比（带隙）比相对侧的n型层的混合比（带隙）充分小。半导体发光元件作为光源特别有用，用于光通信，光激发等。

8. 发明授权

US4740819A Photo semiconductor device 失效
标题翻译：照片半导体器件
公开(公告)号：US4740819A
公开(公告)日：1988-04-26
申请号：US680118
申请日：1986-06-30
申请人： Hirobumi Ouchi , Hiroshi Matsuda , Makoto Morioka , Masahiko Kawata , Kazuhiro Kurata , Yasushi Koga
发明人： Hirobumi Ouchi , Hiroshi Matsuda , Makoto Morioka , Masahiko Kawata , Kazuhiro Kurata , Yasushi Koga
IPC分类号： H01L31/00 , H01L31/107 , H01L29/90
CPC分类号： H01L31/1075
摘要： Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate, at least a first semiconductor layer which exhibits a first conductivity type, a second semiconductor layer which is disposed on said first semiconductor layer, which has a forbidden band gap greater than that of said first semiconductor layer and which exhibits the first conductivity type, and a p-n junction which is formed by a region disposed in said second semiconductor layer and exhibiting a second conductivity type; characterized by comprising a third semiconductor layer which is disposed on said second semiconductor layer, which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer is usually made of a group III-V compound semiconductor of a quaternary system. By way of example, in a case where the first semiconductor layer is formed of InGaAsP and where the second semiconductor layer is formed of InP, the third semiconductor layer is made of InGaAsP, InGaAs or the like. A photo-detective semiconductor device of low dark current can be provided.
摘要翻译：公开了一种光检测半导体器件，其在预定半导体衬底上具有至少第一导电类型的第一半导体层，设置在所述第一半导体层上的禁止带隙大于第二半导体层的第二半导体层，所述第一半导体层的表面具有第一导电类型，以及pn结，其由设置在所述第二半导体层中并呈现第二导电类型的区域形成; 其特征在于包括：第三半导体层，其设置在所述第二半导体层上，其具有第一导电类型并具有表面保护功能。第三半导体层通常由四元系的III-V族化合物半导体制成。作为示例，在第一半导体层由InGaAsP形成且第二半导体层由InP形成的情况下，第三半导体层由InGaAsP，InGaAs等构成。可以提供低暗电流的光检测半导体器件。

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