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1. 发明授权

US06989553B2 Semiconductor device having an active region of alternating layers 有权
标题翻译：具有交替层的有源区的半导体器件
公开(公告)号：US06989553B2
公开(公告)日：2006-01-24
申请号：US10625256
申请日：2003-07-23
申请人： Toshiya Yokogawa , Kunimasa Takahashi , Osamu Kusumoto , Makoto Kitabatake , Takeshi Uenoyama
发明人： Toshiya Yokogawa , Kunimasa Takahashi , Osamu Kusumoto , Makoto Kitabatake , Takeshi Uenoyama
IPC分类号： H01L31/0312
CPC分类号： H01L29/155 , H01L29/045 , H01L29/1608 , H01L29/2003 , H01L29/365 , H01L29/812 , H01L29/872
摘要： An active region 30 is formed on a substrate 3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and n-type doped layers 23 with a thickness (for example, about 10 nm) that is thin enough that quantum effects can be achieved. Carriers spread out into the undoped layers 22 from sub-bands of the n-type doped layers 23 that occur due to quantum effects. In the undoped layers 22, which have a low concentration of impurities, the scattering of impurities is reduced, and therefore a high carrier mobility can be obtained there, and when the entire active region 30 has become depleted, a large withstand voltage value can be obtained due to the undoped layers 22 by taking advantage of the fact that there are no more carriers in the active region 30.
摘要翻译：有源区30形成在由SiC，GaN或GaAs制成的基板3上，例如通过交替层叠厚度例如约50nm的未掺杂层22和厚度为例如约50nm的n型掺杂层23 （例如，约10nm），其足够薄以使得能够实现量子效应。由于量子效应，载体从n型掺杂层23的子带扩散到未掺杂层22中。在具有低浓度杂质的未掺杂层22中，杂质的散射减少，因此可以获得高的载流子迁移率，并且当整个有源区30已经耗尽时，可以有大的耐受电压值通过利用在有源区域30中不再具有载流子的事实，由于未掺杂层22而获得。

2. 发明授权

US06864507B2 MISFET 有权
公开(公告)号：US06864507B2
公开(公告)日：2005-03-08
申请号：US10459807
申请日：2003-06-12
申请人： Toshiya Yokogawa , Makoto Kitabatake , Osamu Kusumoto , Kunimasa Takahashi , Takeshi Uenoyama
发明人： Toshiya Yokogawa , Makoto Kitabatake , Osamu Kusumoto , Kunimasa Takahashi , Takeshi Uenoyama
IPC分类号： H01L21/04 , H01L29/10 , H01L29/24 , H01L29/36 , H01L29/772 , H01L29/78 , H01L31/0312
CPC分类号： H01L29/7813 , H01L21/0455 , H01L29/105 , H01L29/1608 , H01L29/365 , H01L29/66068 , H01L29/7725 , H01L29/78 , H01L29/7828 , H01L29/7838
摘要： P-type active region 12; n-type source/drain regions 13a and 13b; gate insulating film 14 made of a thermal oxide film; gate electrode 15; source/drain electrodes 16a and 16b, are provided over a p-type SiC substrate 11. In the active region 12, p-type heavily doped layers 12a, which are thin enough to create a quantum effect, and thick undoped layers 12b are alternately stacked. When carriers flow, scattering of impurity ions in the active region is reduced, and the channel mobility increases. In the OFF state, a depletion layer expands throughout the active region, and the breakdown voltage increases. As a result of reduction in charges trapped in the gate insulating film or near the interface between the gate insulating film and the active region, the channel mobility further increases.
摘要翻译： P型有源区12; n型源极/漏极区域13a和13b; 由热氧化膜制成的栅极绝缘膜14; 栅电极15; 源极/漏电极16a和16b设置在p型SiC衬底11上。在有源区12中，足够薄以产生量子效应的p型重掺杂层12a和厚的未掺杂层12b交替堆叠当载流子流动时，杂质离子在有源区中的散射减小，并且沟道迁移率增加。在OFF状态下，耗尽层在整个有源区扩展，并且击穿电压增加。由于栅极绝缘膜中俘获的电荷减少或栅极绝缘膜与有源区之间的界面附近的结果，沟道迁移率进一步增加。

3. 发明授权

US06690035B1 Semiconductor device having an active region of alternating layers 有权
标题翻译：具有交替层的有源区的半导体器件
公开(公告)号：US06690035B1
公开(公告)日：2004-02-10
申请号：US09980598
申请日：2001-11-01
申请人： Toshiya Yokogawa , Kunimasa Takahashi , Osamu Kusumoto , Makoto Kitabatake , Takeshi Uenoyama
发明人： Toshiya Yokogawa , Kunimasa Takahashi , Osamu Kusumoto , Makoto Kitabatake , Takeshi Uenoyama
IPC分类号： H01L310312
CPC分类号： H01L29/155 , H01L29/045 , H01L29/1608 , H01L29/2003 , H01L29/365 , H01L29/812 , H01L29/872
摘要： An active region 30 is formed on a substrate 3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and n-type doped layers 23 with a thickness (for example, about 10 nm) that is thin enough that quantum effects can be achieved. Carriers spread out into the undoped layers 22 from sub-bands of the n-type doped layers 23 that occur due to quantum effects. In the undoped layers 22, which have a low concentration of impurities, the scattering of impurities is reduced, and therefore a high carrier mobility can be obtained there, and when the entire active region 30 has become depleted, a large withstand voltage value can be obtained due to the undoped layers 22 by taking advantage of the fact that there are no more carriers in the active region 30.
摘要翻译：有源区30形成在由SiC，GaN或GaAs制成的基板3上，例如通过交替层叠厚度例如约50nm的未掺杂层22和厚度为例如约50nm的n型掺杂层23 （例如，约10nm），其足够薄以使得能够实现量子效应。由于量子效应，载体从n型掺杂层23的子带扩散到未掺杂层22中。在具有低浓度杂质的未掺杂层22中，杂质的散射减少，因此可以获得高的载流子迁移率，并且当整个有源区30已经耗尽时，可以有大的耐受电压值通过利用在有源区域30中不再具有载流子的事实，由于未掺杂层22而获得。

4. 发明授权

US06674131B2 Semiconductor power device for high-temperature applications 失效
标题翻译：半导体功率器件用于高温应用
公开(公告)号：US06674131B2
公开(公告)日：2004-01-06
申请号：US10069654
申请日：2002-02-26
申请人： Toshiya Yokogawa , Kunimasa Takahashi , Makoto Kitabatake , Osamu Kusumoto , Takeshi Uenoyama , Koji Miyazaki
发明人： Toshiya Yokogawa , Kunimasa Takahashi , Makoto Kitabatake , Osamu Kusumoto , Takeshi Uenoyama , Koji Miyazaki
IPC分类号： H01L29423
CPC分类号： H01L21/8213 , H01L21/8252 , H01L27/0629 , H01L27/0688 , H01L29/105 , H01L29/157 , H01L29/1608 , H01L29/365 , H01L29/7725 , H01L29/7838 , H01L29/812 , H01L29/872 , Y10S438/931 , Y10S438/957
摘要： In a SiC substrate (10), a first active region (12) composed of n-type heavily doped layers (12a) and undoped layers (12b), which are alternately stacked, and a second active region (13) composed of p-type heavily doped layers (13a) and undoped layers (13b), which are alternately stacked, are provided upwardly in this order. A Schottky diode (20) and a pMOSFET (30) are provided on the first active region (12). An nMOSFET (40), a capacitor (50), and an inductor (60) are provided on the second active region (13). The Schottky diode (20) and the MOSFETs (30, 40) have a breakdown voltage characteristic and a carrier flow characteristic due to a multilayer structure composed of &dgr;-doped layers and undoped layers and are integrated in a common substrate.
摘要翻译：在SiC衬底（10）中，交替堆叠由n型重掺杂层（12a）和未掺杂层（12b）组成的第一有源区（12）和由p-型衬底构成的第二有源区（13）交替层叠的重掺杂层（13a）和未掺杂层（13b）按顺序向上设置。肖特基二极管（20）和pMOSFET（30）设置在第一有源区（12）上。在第二有源区域（13）上设置有nMOSFET（40），电容器（50）和电感器（60）。肖特基二极管（20）和MOSFET（30,40）由于由δ掺杂层和未掺杂层组成的多层结构而具有击穿电压特性和载流子特性，并且集成在公共衬底中。

5. 发明授权

US06617653B1 MISFET 有权
公开(公告)号：US06617653B1
公开(公告)日：2003-09-09
申请号：US10048344
申请日：2002-01-30
申请人： Toshiya Yokogawa , Makoto Kitabatake , Osamu Kusumoto , Kunimasa Takahashi , Takeshi Uenoyama
发明人： Toshiya Yokogawa , Makoto Kitabatake , Osamu Kusumoto , Kunimasa Takahashi , Takeshi Uenoyama
IPC分类号： H01L2994
CPC分类号： H01L29/7813 , H01L21/0455 , H01L29/105 , H01L29/1608 , H01L29/365 , H01L29/66068 , H01L29/7725 , H01L29/78 , H01L29/7828 , H01L29/7838
摘要： P-type active region 12; n-type source/drain regions 13a and 13b; gate insulating film 14 made of a thermal oxide film; gate electrode 15; source/drain electrodes 16a and 16b, are provided over a p-type SiC substrate 11. In the active region 12, p-type heavily doped layers 12a, which are thin enough to create a quantum effect, and thick undoped layers 12b are alternately stacked. When carriers flow, scattering of impurity ions in the active region is reduced, and the channel mobility increases. In the OFF state, a depletion layer expands throughout the active region, and the breakdown voltage increases. As a result of reduction in charges trapped in the gate insulating film or near the interface between the gate insulating film and the active region, the channel mobility further increases.

6. 发明授权

US06228720B1 Method for making insulated-gate semiconductor element 有权
标题翻译：制造绝缘栅半导体元件的方法
公开(公告)号：US06228720B1
公开(公告)日：2001-05-08
申请号：US09507714
申请日：2000-02-18
申请人： Makoto Kitabatake , Masao Uchida , Kunimasa Takahashi , Takeshi Uenoyama
发明人： Makoto Kitabatake , Masao Uchida , Kunimasa Takahashi , Takeshi Uenoyama
IPC分类号： H01L21336
CPC分类号： H01L29/7813 , H01L21/049 , H01L29/66068
摘要： An insulated-gate semiconductor element with a trench structure is provided, which has a high breakdown voltage even though a silicon carbide substrate is used that is preferable to obtain a semiconductor element with favorable properties. The surface of a silicon carbide substrate is etched to form a concave portion. Then, a particle beam, for example an ion beam, is irradiated from above, and a defect layer is formed at least in a bottom surface of the concave portion. The substrate is heated in an oxidation atmosphere, and an oxide film is formed at least on a side surface and the bottom surface of the concave portion. Then, a gate electrode is formed on the oxide film. With this method, the oxide film at the bottom surface of the concave portion is thicker than the oxide film at the side surfaces of the concave portion, so that a high breakdown voltage can be ensured, even when the surface of the silicon carbide layer is a face with which a superior epitaxial layer can be attained, such as the (111) Si-face of &bgr;-SiC or the (0001) Si-face of &agr;-SiC.
摘要翻译：提供了具有沟槽结构的绝缘栅半导体元件，即使使用优选获得具有良好特性的半导体元件的碳化硅衬底，其具有高的击穿电压。蚀刻碳化硅衬底的表面以形成凹部。然后，从上方照射粒子束，例如离子束，至少在凹部的底面形成有缺陷层。在氧化气氛中加热基板，至少在凹部的侧面和底面形成氧化膜。然后，在氧化膜上形成栅电极。通过该方法，凹部底面的氧化膜比凹部的侧面的氧化膜厚，因此即使当碳化硅层的表面为可以获得优异的外延层的面，例如β-SiC的（111）Si面或α-SiC的（0001）Si面。

7. 发明授权

US06350999B1 Electron-emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US06350999B1
公开(公告)日：2002-02-26
申请号：US09449525
申请日：1999-11-29
申请人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
发明人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
IPC分类号： H01L310328
CPC分类号： H01J1/308
摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
摘要翻译：在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。由此获得优异的电子发射特性。

8. 发明授权

US06399970B2 FET having a Si/SiGeC heterojunction channel 失效
标题翻译：具有Si / SiGeC异质结通道的FET
公开(公告)号：US06399970B2
公开(公告)日：2002-06-04
申请号：US08931562
申请日：1997-09-16
申请人： Minoru Kubo , Katsuya Nozawa , Masakatsu Suzuki , Takeshi Uenoyama , Yasuhito Kumabuchi
发明人： Minoru Kubo , Katsuya Nozawa , Masakatsu Suzuki , Takeshi Uenoyama , Yasuhito Kumabuchi
IPC分类号： H01L29778
CPC分类号： H01L29/66431 , H01L21/8238 , H01L21/823807 , H01L27/092 , H01L29/1029 , H01L29/161 , H01L29/7782
摘要： Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the heterointerface between the SiGeC and Si layers. Electrons travel in this carrier accumulation layer serving as a channel. In the SiGeC layer, the electron mobility is greater than in silicon, thus increasing the NMOS transistor in operational speed. In a PMOS transistor, a channel in which positive holes travel, is formed with the use of a discontinuous portion of a valence band at the interface between the SiGe and Si layers. In the SiGe layer, too, the positive hole mobility is greater than in the Si layer, thus increasing the PMOS transistor in operational speed. There can be provided a semiconductor device having field-effect transistors having channels lessened in crystal defect.
摘要翻译： Si和SiGeC层形成在Si衬底上的NMOS晶体管中。使用存在于SiGeC和Si层之间的异质界面处的导带的不连续部分来形成载流子积累层。电子在作为通道的载流子累积层中行进。在SiGeC层中，电子迁移率大于硅中的电子迁移率，从而增加NMOS晶体管的工作速度。在PMOS晶体管中，通过在SiGe和Si层之间的界面处使用价带的不连续部分来形成空穴行进的沟道。 SiGe层中的空穴迁移率也大于Si层，因此增加PMOS晶体管的工作速度。可以提供具有场效应晶体管的半导体器件，其具有在晶体缺陷中减少的沟道。

9. 发明授权

US06141364A Semiconductor laser device and optical disk apparatus using the same 失效
标题翻译：半导体激光装置及其使用的光盘装置
公开(公告)号：US06141364A
公开(公告)日：2000-10-31
申请号：US348214
申请日：1999-07-08
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.
摘要翻译：本发明的半导体激光器件包括由n型GaAs制成的衬底201，有源层204以及夹持有源层204的一对覆层。该器件还包括与有源层204相邻的间隔层205 和高掺杂的可饱和吸收层206.通过以高浓度掺杂可饱和吸收层206来缩短载流子寿命，由此可以获得稳定的自持脉动。结果，可以获得在宽的温度范围内具有低的相对噪声强度的半导体激光器件。

10. 发明授权

US6055253A Semiconductor laser device with an optical guide layer 失效
标题翻译：具有导光层的半导体激光器件
公开(公告)号：US6055253A
公开(公告)日：2000-04-25
申请号：US396509
申请日：1995-03-01
申请人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
发明人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
IPC分类号： H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/3403 , H01S5/3409
摘要： A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.
摘要翻译：提供一种半导体激光器件，其具有有源层，插入有源层的一对包覆层和设置在一对包层之一和有源层之间的多量子势垒，并且多量子势垒包括阻挡层和井层相互交替。半导体激光装置还包括限制在量子阱层中产生的光并且光导层未被掺杂的光导层。

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