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1. 发明授权

US06399970B2 FET having a Si/SiGeC heterojunction channel 失效
标题翻译：具有Si / SiGeC异质结通道的FET
公开(公告)号：US06399970B2
公开(公告)日：2002-06-04
申请号：US08931562
申请日：1997-09-16
申请人： Minoru Kubo , Katsuya Nozawa , Masakatsu Suzuki , Takeshi Uenoyama , Yasuhito Kumabuchi
发明人： Minoru Kubo , Katsuya Nozawa , Masakatsu Suzuki , Takeshi Uenoyama , Yasuhito Kumabuchi
IPC分类号： H01L29778
CPC分类号： H01L29/66431 , H01L21/8238 , H01L21/823807 , H01L27/092 , H01L29/1029 , H01L29/161 , H01L29/7782
摘要： Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the heterointerface between the SiGeC and Si layers. Electrons travel in this carrier accumulation layer serving as a channel. In the SiGeC layer, the electron mobility is greater than in silicon, thus increasing the NMOS transistor in operational speed. In a PMOS transistor, a channel in which positive holes travel, is formed with the use of a discontinuous portion of a valence band at the interface between the SiGe and Si layers. In the SiGe layer, too, the positive hole mobility is greater than in the Si layer, thus increasing the PMOS transistor in operational speed. There can be provided a semiconductor device having field-effect transistors having channels lessened in crystal defect.
摘要翻译： Si和SiGeC层形成在Si衬底上的NMOS晶体管中。使用存在于SiGeC和Si层之间的异质界面处的导带的不连续部分来形成载流子积累层。电子在作为通道的载流子累积层中行进。在SiGeC层中，电子迁移率大于硅中的电子迁移率，从而增加NMOS晶体管的工作速度。在PMOS晶体管中，通过在SiGe和Si层之间的界面处使用价带的不连续部分来形成空穴行进的沟道。 SiGe层中的空穴迁移率也大于Si层，因此增加PMOS晶体管的工作速度。可以提供具有场效应晶体管的半导体器件，其具有在晶体缺陷中减少的沟道。

2. 发明授权

US06141364A Semiconductor laser device and optical disk apparatus using the same 失效
标题翻译：半导体激光装置及其使用的光盘装置
公开(公告)号：US06141364A
公开(公告)日：2000-10-31
申请号：US348214
申请日：1999-07-08
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.
摘要翻译：本发明的半导体激光器件包括由n型GaAs制成的衬底201，有源层204以及夹持有源层204的一对覆层。该器件还包括与有源层204相邻的间隔层205 和高掺杂的可饱和吸收层206.通过以高浓度掺杂可饱和吸收层206来缩短载流子寿命，由此可以获得稳定的自持脉动。结果，可以获得在宽的温度范围内具有低的相对噪声强度的半导体激光器件。

3. 发明授权

US6055253A Semiconductor laser device with an optical guide layer 失效
标题翻译：具有导光层的半导体激光器件
公开(公告)号：US6055253A
公开(公告)日：2000-04-25
申请号：US396509
申请日：1995-03-01
申请人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
发明人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
IPC分类号： H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/3403 , H01S5/3409
摘要： A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.
摘要翻译：提供一种半导体激光器件，其具有有源层，插入有源层的一对包覆层和设置在一对包层之一和有源层之间的多量子势垒，并且多量子势垒包括阻挡层和井层相互交替。半导体激光装置还包括限制在量子阱层中产生的光并且光导层未被掺杂的光导层。

4. 发明授权

US5600667A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5600667A
公开(公告)日：1997-02-04
申请号：US223215
申请日：1994-04-05
申请人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
发明人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
IPC分类号： H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/3403 , H01S5/3409
摘要： A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer.
摘要翻译：提供一种半导体激光器件，其具有有源层，插入有源层的一对包覆层和设置在一对包层之一和有源层之间的多量子势垒。多量子势垒包括阻挡层和彼此交替的阱层。多量子势垒中的至少一个阻挡层和阱层的厚度，能带隙或杂质浓度随着与有源层的距离而变化，从而提供将从有源层溢出的载流子反射回到活动层。

5. 发明申请

US20070228395A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20070228395A1
公开(公告)日：2007-10-04
申请号：US11759326
申请日：2007-06-07
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

6. 发明授权

US06861672B2 Semiconductor light emitting element and method for fabricating the same 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06861672B2
公开(公告)日：2005-03-01
申请号：US10011552
申请日：2001-11-06
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/16 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01L27/15
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

7. 发明申请

US20050003571A1 Semiconductor light emitting element and method for fabricating the same 有权
公开(公告)号：US20050003571A1
公开(公告)日：2005-01-06
申请号：US10891968
申请日：2004-07-15
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/16 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01L21/00
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

8. 发明授权

US06350999B1 Electron-emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US06350999B1
公开(公告)日：2002-02-26
申请号：US09449525
申请日：1999-11-29
申请人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
发明人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
IPC分类号： H01L310328
CPC分类号： H01J1/308
摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
摘要翻译：在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。由此获得优异的电子发射特性。

9. 发明授权

US6081541A Semiconductor laser device and optical disk apparatus using the same 失效
公开(公告)号：US6081541A
公开(公告)日：2000-06-27
申请号：US349747
申请日：1999-07-08
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.

10. 发明授权

US6072817A Semiconductor laser device and optical disk apparatus using the same 失效
标题翻译：半导体激光装置及其使用的光盘装置
公开(公告)号：US6072817A
公开(公告)日：2000-06-06
申请号：US732279
申请日：1996-10-30
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.
摘要翻译： PCT No.PCT / JP96 / 00801 Sec。 371日期1996年10月30日 102（e）日期1996年10月30日PCT 1996年3月27日PCT公布。公开号WO96 / 30977 日期1996年10月3日本发明的半导体激光装置包括由n型GaAs制成的基板201，有源层204和夹持有源层204的一对包层。该器件还包括相邻的间隔层205 到有源层204和高掺杂的可饱和吸收层206.通过以高浓度掺杂可饱和吸收层206来缩短载流子寿命，由此可以获得稳定的自持脉动。结果，可以获得在宽的温度范围内具有低的相对噪声强度的半导体激光器件。

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