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1. 发明申请

US20090159924A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20090159924A1
公开(公告)日：2009-06-25
申请号：US12391531
申请日：2009-02-24
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在活性层的c面产生各向异性应变。

2. 发明授权

US07408968B2 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07408968B2
公开(公告)日：2008-08-05
申请号：US11489616
申请日：2006-07-20
申请人： Toshiya Fukuhisa , Masaya Mannoh , Hidetoshi Furukawa
发明人： Toshiya Fukuhisa , Masaya Mannoh , Hidetoshi Furukawa
IPC分类号： H01S5/00 , H01S3/14
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/2231 , H01S5/3201 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a first second-conductive-type cladding layer stacked in this order on a substrate; and a second light emitting device, the second light emitting device including a second first-conductive-type cladding layer, a second active layer having a second window region in the vicinity of a light emitting edge surface and a second second-conductive-type cladding layer stacked in this order on the substrate. In the semiconductor laser device, respective lattice constants of the first second-conductive-type and second second-conductive-type cladding layers are adjusted to compensate for a difference in diffusion rate of an impurity between the first window region in the first active layer and the second window region in the second active layer.
摘要翻译：半导体激光器件包括：第一发光器件，所述第一发光器件包括第一第一导电型包覆层，在发光边缘表面附近具有第一窗口区域的第一有源层和第一第二导电型包层导电型包覆层依次层叠在基板上; 和第二发光器件，所述第二发光器件包括第二第一导电型包覆层，在发光边缘表面附近具有第二窗口区域的第二有源层和第二第二导电型覆层层以此顺序堆叠在基板上。在半导体激光器件中，调整第一第二导电型和第二第二导电型包覆层的各自的晶格常数，以补偿第一有源层中的第一窗口区域和第一有源层之间的杂质的扩散速率的差异第二活动层中的第二窗口区域。

3. 发明授权

US06905898B2 Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method 有权
标题翻译：半导体衬底，半导体衬底的制造方法，半导体器件和图案形成方法
公开(公告)号：US06905898B2
公开(公告)日：2005-06-14
申请号：US10413995
申请日：2003-04-16
申请人： Masahiro Ishida , Masahiro Ogawa , Masaya Mannoh , Masaaki Yuri
发明人： Masahiro Ishida , Masahiro Ogawa , Masaya Mannoh , Masaaki Yuri
IPC分类号： H01L21/027 , G03F7/09 , H01L33/00 , H01L33/20 , H01L33/22 , H01L21/00
CPC分类号： H01L21/02389 , G03F7/091 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/007 , H01L33/20 , H01L33/22 , H01S5/0207 , H01S5/22 , H01S5/2219 , H01S5/32341
摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.
摘要翻译：半导体衬底包括以III族氮化物为主要成分的半导体层。在半导体层的另一平面或内部设置用于散射入射在半导体层的一个平面上的入射光束的散射部分。

4. 发明授权

US5345463A Semiconductor laser with improved oscillation wavelength reproducibility 失效
标题翻译：具有改善振荡波长再现性的半导体激光器
公开(公告)号：US5345463A
公开(公告)日：1994-09-06
申请号：US45423
申请日：1993-04-13
申请人： Masaya Mannoh , Kiyoshi Ohnaka
发明人： Masaya Mannoh , Kiyoshi Ohnaka
IPC分类号： H01S5/00 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32325 , H01S5/305 , H01S5/2231 , H01S5/3211
摘要： A lateral mode control type of semiconductor laser has a high-yield structure having a long life and improved oscillation wavelength reproducibility. A diffusion limit layer formed of an undoped Ga.sub.0.5 In.sub.0.5 P layer and an undoped (Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P layer is provided between a p-(Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P clad layer and an undoped Ga.sub.0.5 In.sub.0.5 P active layer. The diffusion limit layer has a diffusion coefficient smaller than that of the clad layer. Impurity Zn diffused from the p-(Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P clad layer during crystal growth or working is trapped in the undoped Ga.sub.0.5 In.sub.0.5 P layer almost entirely. A part of the impurity Zn diffuses in the undoped (Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P layer thereunder but does not reach the undoped Ga.sub.0.5 In.sub.0.5 P active layer.
摘要翻译：半导体激光器的横向模式控制型具有寿命长，振荡波长再现性提高的高产率结构。由未掺杂的Ga0.5In0.5P层和未掺杂的（Al0.6Ga0.4）0.5In0.5P层形成的扩散极限层设置在p（Al 0.6 Ga 0.4）0.5 In 0.5 P包层和未掺杂的Ga0.5In0.5P有源层。扩散极限层的扩散系数小于包覆层的扩散系数。在晶体生长或加工期间从p-（Al0.6Ga0.4）0.5In0.5P包覆层扩散的杂质Zn几乎完全被捕获在未掺杂的Ga 0.5 In 0.5 P层中。杂质Zn的一部分在其下面的未掺杂（Al 0.6 Ga 0.4）0.5 In 0.5 P层中扩散，但未到达未掺杂的Ga 0.5 In 0.5 P活性层。

5. 发明授权

US07566577B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07566577B2
公开(公告)日：2009-07-28
申请号：US11504658
申请日：2006-08-16
申请人： Yoshiyuki Matsuki , Masaya Mannoh , Toshiya Fukuhisa , Tsutomu Ukai
发明人： Yoshiyuki Matsuki , Masaya Mannoh , Toshiya Fukuhisa , Tsutomu Ukai
IPC分类号： H01L21/02
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/162 , H01S5/305 , H01S5/3054 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/4087 , H01S2304/00
摘要： A semiconductor laser device in which a red semiconductor laser device and an infrared semiconductor laser device are located on a single substrate, and an end-face window structure is formed simultaneously. The hydrogen concentration (1.5e18 cm−3) of a fourth clad layer (110) of the infrared semiconductor laser device is higher than the hydrogen concentration (1e18 cm−3) of a second clad layer (105) of the red semiconductor laser device which is a first semiconductor laser device, whereby an active layer of the infrared semiconductor laser device can be sufficiently disordered in the semiconductor laser device.
摘要翻译：一种半导体激光器件，其中红色半导体激光器件和红外半导体激光器件位于单个衬底上，并且同时形成端面窗口结构。红外半导体激光装置的第四包层（110）的氢浓度（1.5e18cm-3）高于红色半导体激光装置的第二包层（105）的氢浓度（1e18cm-3）其是半导体激光装置中的红外半导体激光装置的有源层能够充分地无序化的第一半导体激光装置。

6. 发明申请

US20080105950A1 SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING THE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND PATTERN FORMING METHOD 审中-公开
标题翻译：半导体基板，制造半导体基板的方法，半导体器件和图案形成方法
公开(公告)号：US20080105950A1
公开(公告)日：2008-05-08
申请号：US11970582
申请日：2008-01-08
申请人： Masahiro ISHIDA , Masahiro OGAWA , Masaya MANNOH , Masaaki YURI
发明人： Masahiro ISHIDA , Masahiro OGAWA , Masaya MANNOH , Masaaki YURI
IPC分类号： H01L29/20
CPC分类号： H01L21/02389 , G03F7/091 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/007 , H01L33/20 , H01L33/22 , H01S5/0207 , H01S5/22 , H01S5/2219 , H01S5/32341
摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.
摘要翻译：半导体衬底包括以III族氮化物为主要成分的半导体层。在半导体层的另一平面或内部设置用于散射入射在半导体层的一个平面上的入射光束的散射部分。

7. 发明申请

US20060023765A1 Semiconductor laser having two or more laser diode portions and a manufacturing method for the same 审中-公开
标题翻译：具有两个或更多个激光二极管部分的半导体激光器及其制造方法
公开(公告)号：US20060023765A1
公开(公告)日：2006-02-02
申请号：US11153556
申请日：2005-06-16
申请人： Toshiya Fukuhisa , Masaya Mannoh , Hidetoshi Furukawa , Kohji Makita
发明人： Toshiya Fukuhisa , Masaya Mannoh , Hidetoshi Furukawa , Kohji Makita
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01S5/4087
摘要： The semiconductor laser according to the present invention has a substrate used as a shared base, on which an infrared laser diode portion and a red laser diode portion are formed apart from each other. The top surfaces of the laminated layers of the individual laser diode portions have different height positions in the thickness direction of the substrate in relation to the reference point Bf. Neighboring members are formed on the outer edge of the laser, sandwiching therebetween where the laser diode portions are formed. The top surface positions of the neighboring members are all set to the same height which is higher than or equal to the top surface position of the higher laser diode portion of the two.
摘要翻译：根据本发明的半导体激光器具有用作共享基底的基板，红外激光二极管部分和红色激光二极管部分彼此分开形成。各个激光二极管部分的层压层的顶表面相对于参考点Bf在基板的厚度方向上具有不同的高度位置。相邻构件形成在激光器的外边缘上，夹在其间形成激光二极管部分的位置处。相邻构件的顶表面位置都被设置为高于或等于两者的较高激光二极管部分的顶表面位置的相同高度。

8. 发明授权

US06562644B2 Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method 有权
公开(公告)号：US06562644B2
公开(公告)日：2003-05-13
申请号：US09921885
申请日：2001-08-06
申请人： Masahiro Ishida , Masahiro Ogawa , Masaya Mannoh , Masaaki Yuri
发明人： Masahiro Ishida , Masahiro Ogawa , Masaya Mannoh , Masaaki Yuri
IPC分类号： H01L2100
CPC分类号： H01L21/02389 , G03F7/091 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/007 , H01L33/20 , H01L33/22 , H01S5/0207 , H01S5/22 , H01S5/2219 , H01S5/32341
摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

9. 发明授权

US06195374B1 Semiconductor laser and optical disk device using the laser 有权
标题翻译：半导体激光和光盘装置使用激光
公开(公告)号：US06195374B1
公开(公告)日：2001-02-27
申请号：US09546254
申请日：2000-04-10
申请人： Isao Kidoguchi , Hideto Adachi , Masaya Mannoh , Toshiya Fukuhisa , Akira Takamori
发明人： Isao Kidoguchi , Hideto Adachi , Masaya Mannoh , Toshiya Fukuhisa , Akira Takamori
IPC分类号： H01S500
CPC分类号： B82Y20/00 , G11B7/127 , H01S3/1118 , H01S5/0601 , H01S5/0615 , H01S5/0658 , H01S5/2004 , H01S5/2231 , H01S5/3211 , H01S5/34326 , H01S5/34333 , H01S5/347
摘要： An n-type GaAs buffer layer 702, an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a, an optical guide layer 707, a second p-type cladding layer 705b, a p-type GaInP saturable absorption layer 706, and a third p-type AlGaInP cladding layer 707 are sequentially formed on an n-type GaAs substrate 701. In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.
摘要翻译： n型GaAs缓冲层702，n型AlGaInP包层703，由AlGaInP和GaInP构成的多量子阱有源层704，第一p型AlGaInP包层705a，导光层707，第二p 型包层705b，p型GaInP可饱和吸收层706和第三p型AlGaInP包层707依次形成在n型GaAs衬底701上。在该结构中，可饱和吸收层的体积为并且提供光导层。随着饱和吸收层的体积变小，载流子密度越容易增加，饱和状态越容易实现，饱和吸收效果越显着。因此，实现了具有稳定的自振动特性并因此具有低相对噪声强度的半导体激光器。

10. 发明授权

US06141364A Semiconductor laser device and optical disk apparatus using the same 失效
标题翻译：半导体激光装置及其使用的光盘装置
公开(公告)号：US06141364A
公开(公告)日：2000-10-31
申请号：US348214
申请日：1999-07-08
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.
摘要翻译：本发明的半导体激光器件包括由n型GaAs制成的衬底201，有源层204以及夹持有源层204的一对覆层。该器件还包括与有源层204相邻的间隔层205 和高掺杂的可饱和吸收层206.通过以高浓度掺杂可饱和吸收层206来缩短载流子寿命，由此可以获得稳定的自持脉动。结果，可以获得在宽的温度范围内具有低的相对噪声强度的半导体激光器件。

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