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1. 发明申请

US20070240629A1 Method for manufacturing a silicon single crystal 审中-公开
标题翻译：硅单晶的制造方法
公开(公告)号：US20070240629A1
公开(公告)日：2007-10-18
申请号：US11783544
申请日：2007-04-10
申请人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
发明人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
IPC分类号： C30B15/00 , C30B27/02
CPC分类号： C30B15/14 , C30B29/06
摘要： The present invention relates to a method for manufacturing a silicon single crystal by pulling up the silicon single crystal from a molten silicon by the CZ method, comprising: a cooling step of cooling the silicon single crystal by a cooler surrounding the silicon single crystal, and a heat shield body disposed surrounding an outer side and a lower side of the cooler while the silicon single crystal is being pulled up; and an Ms adjusting step of determining, in advance, an allowable range of a pulling speed at which a silicon single crystal having few crystal defects can be obtained by adjusting a distance (referred to “Ms”) from the lower surface of the heat shield body disposed on the lower side of the cooler to the surface of the molten silicon, wherein the silicon single crystal 11 is pulled up at a pulling speed within the allowable range thus determined.
摘要翻译：本发明涉及通过CZ法从熔融硅中提取硅单晶来制造单晶硅的方法，包括：冷却步骤，通过围绕硅单晶的冷却剂冷却硅单晶;以及隔热体，其在所述硅单晶被拉起的同时围绕所述冷却器的外侧和下侧设置; 以及Ms调整步骤，预先确定通过从隔热板的下表面调整距离（称为“Ms”），可以获得具有很少晶体缺陷的硅单晶的拉伸速度的允许范围本体设置在冷却器的下侧至熔融硅的表面，其中硅单晶11以这样确定的允许范围内的拉拔速度被拉起。

2. 发明申请

US20070227439A1 Method for manufacturing defect-free silicon single crystal 有权
标题翻译：无缺陷硅单晶的制造方法
公开(公告)号：US20070227439A1
公开(公告)日：2007-10-04
申请号：US11728739
申请日：2007-03-27
申请人： Takashi Yokoyama , Toshiaki Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
发明人： Takashi Yokoyama , Toshiaki Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/917 , Y10T117/1056
摘要： A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.
摘要翻译：提供了一种用于控制硅单晶侧表面温度梯度，固液界面高度和硅单晶长度方向氧浓度的方法，以制造无缺陷硅其浓度迅速且稳定地控制在预定值的单晶。通过在硅单晶周围配置圆筒状的冷却器，调整硅单晶的拉拔速度，存储熔融硅的坩埚的旋转速度和硅单晶的旋转速度，加热器在坩埚周围的硅单晶的长度方向分离成至少两个，侧面的温度梯度，固液界面的高度以及硅单晶的长度方向的氧浓度被控制。

3. 发明授权

US07524371B2 Method for manufacturing defect-free silicon single crystal 有权
标题翻译：无缺陷硅单晶的制造方法
公开(公告)号：US07524371B2
公开(公告)日：2009-04-28
申请号：US11728739
申请日：2007-03-27
申请人： Takashi Yokoyama , Toshiaka Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
发明人： Takashi Yokoyama , Toshiaka Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/917 , Y10T117/1056
摘要： A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.
摘要翻译：提供了一种用于控制硅单晶侧表面温度梯度，固液界面高度和硅单晶长度方向氧浓度的方法，以制造无缺陷硅其浓度迅速且稳定地控制在预定值的单晶。通过在硅单晶周围配置圆筒状的冷却器，调整硅单晶的拉拔速度，存储熔融硅的坩埚的旋转速度和硅单晶的旋转速度，加热器在坩埚周围的硅单晶的长度方向分离成至少两个，侧面的温度梯度，固液界面的高度以及硅单晶的长度方向的氧浓度被控制。

4. 发明申请

US20080311019A1 Apparatus for pulling single crystal by CZ method 审中-公开
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US20080311019A1
公开(公告)日：2008-12-18
申请号：US11981476
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C01B33/02 , H01L21/322
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

5. 发明授权

US07141113B1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer 有权
标题翻译：单晶硅的制造方法和单晶锭的制造装置以及硅晶片的热处理方法
公开(公告)号：US07141113B1
公开(公告)日：2006-11-28
申请号：US09856212
申请日：1999-11-19
申请人： Kozo Nakamura , Toshiaki Saishoji , Hirotaka Nakajima , Shinya Sadohara , Masashi Nishimura , Toshirou Kotooka , Yoshiyuki Shimanuki
发明人： Kozo Nakamura , Toshiaki Saishoji , Hirotaka Nakajima , Shinya Sadohara , Masashi Nishimura , Toshirou Kotooka , Yoshiyuki Shimanuki
IPC分类号： C30B33/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (° C./mm), V/G ranges from 0.16 to 0.18 mm2/° C. min between a crystal center position and a crystal outer periphery position, and a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13×1017 atoms/cm3, an initial heat treatment temperature is at least up to 500° C. and a temperature is raised at up to 1° C./min at least within 700 to 900° C., thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.
摘要翻译：一种通过切克劳斯基法生长硅晶体的方法，其中，拉伸速度为V（mm / min），拉伸轴方向的晶体内温度梯度的平均值在温度范围内，硅熔点至1350℃，为G（℃/ mm），V / G在晶体中心位置和晶体外周位置之间的范围为0.16至0.18mm 2 /℃，以及在温度范围内的牵引轴方向的晶体内温度梯度的平均值G的比G外部/ G中心，硅熔点为1350℃，晶体外表面与晶体的晶体温度梯度中心设置为1.10，从而获得高质量的完美晶体硅晶片。这种完美的晶体硅晶片，其中氧浓度被控制到高达13×10 17原子/ cm 3，初始热处理温度至少高达500℃ 并且在至少在700至900℃之间将温度升至高达1℃/分钟，从而使得晶片的径向分布均匀到任意的氧析出浓度水平。

6. 发明授权

US07727334B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US07727334B2
公开(公告)日：2010-06-01
申请号：US11809357
申请日：2007-05-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

7. 发明申请

US20090173272A1 Apparatus for pulling single crystal by CZ method 有权
公开(公告)号：US20090173272A1
公开(公告)日：2009-07-09
申请号：US12317695
申请日：2008-12-23
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , F28D15/00
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

8. 发明申请

US20080311021A1 Apparatus for pulling single crystal by CZ method 审中-公开
公开(公告)号：US20080311021A1
公开(公告)日：2008-12-18
申请号：US11981477
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20 , C01B33/02
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

9. 发明申请

US20080302295A1 Method of Evaluating Quality of Silicon Single Crystal 审中-公开
标题翻译：评估硅单晶质量的方法
公开(公告)号：US20080302295A1
公开(公告)日：2008-12-11
申请号：US11659061
申请日：2005-08-01
申请人： Toshirou Kotooka , Shin Matsukuma , Toshiaki Saishoji
发明人： Toshirou Kotooka , Shin Matsukuma , Toshiaki Saishoji
IPC分类号： C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B29/06
摘要： In the crystal growth rate (V), there is such a permissible range that the given quality of silicon single crystal can be maintained. This permissible range is determined in advance. The log data of crystal growth rate (V) is measured in the pulling up of silicon single crystal, and using the log data, the actual value of crystal growth rate (V) is determined. The actual value is compared with the permissible range. Any region of silicon single crystal corresponding to crystal growth rate (V) falling within the permissible range is judged as being a conforming region satisfying given standards, while any region of silicon single crystal corresponding to crystal growth rate (V) falling outside the permissible range is judged as being a defective region not satisfying given standards.
摘要翻译：在晶体生长速度（V）中，存在可以保持给定质量的硅单晶的允许范围。该容许范围是事先决定的。在单晶硅拉伸下测量晶体生长速率（V）的对数数据，使用对数数据，确定晶体生长速率（V）的实际值。将实际值与容许范围进行比较。对应于允许范围内的晶体生长速率（V）的硅单晶的任何区域被判定为满足给定标准的一致区域，而对应于超过容许范围的晶体生长速率（V）的硅单晶的任何区域被认为是不满足给定标准的缺陷区域。

10. 发明授权

US06977010B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US06977010B2
公开(公告)日：2005-12-20
申请号：US10337456
申请日：2003-01-07
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , C30B15/14 , C30B15/30 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B35/00
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

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