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1. 发明授权

US08216371B2 Single crystal manufacturing apparatus and method 有权
标题翻译：单晶制造装置及方法
公开(公告)号：US08216371B2
公开(公告)日：2012-07-10
申请号：US12311111
申请日：2007-07-20
申请人： Tetsuhiro Iida , Shin Matsukuma
发明人： Tetsuhiro Iida , Shin Matsukuma
IPC分类号： C30B35/00 , C30B15/14 , C30B15/10 , C30B15/20
CPC分类号： C30B15/20 , C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A Czochralski single crystal manufacturing apparatus uses multiple heaters to improve the controllability of crystal diameter. The power supplied to the multiple heaters is controlled so as to bring the pulling up speed close to a predetermined speed set value, and so as to bring the heater temperatures close to predetermined target temperature values. The ratio of electrical power between the heaters is controlled to agree with a predetermined power ratio set value which varies according to the crystal pulling up length, and the heater temperatures change along with this change, which causes disturbance to the diameter control. To compensate for this, heater temperature changes along with the power ratio set value change are taken into account in advance in the temperature set values. Accordingly, along with change of the power ratio set value, the temperature set values change to values appropriate for the current power ratio set value.
摘要翻译： Czochralski单晶制造装置使用多个加热器来提高晶体直径的可控性。控制提供给多个加热器的功率，以使提升速度接近预定的速度设定值，并使加热器温度接近预定的目标温度值。加热器之间的功率比被控制为与根据晶体拉长长度变化的预定功率比设定值一致，并且加热器温度随着该变化而变化，这导致对直径控制的干扰。为了补偿这一点，预先在温度设定值中考虑加热器温度随功率比设定值变化的变化。因此，随着功率比设定值的变化，温度设定值变为适合于当前功率比设定值的值。

2. 发明申请

US20090293800A1 Single crystal manufacturing apparatus and method 有权
标题翻译：单晶制造装置及方法
公开(公告)号：US20090293800A1
公开(公告)日：2009-12-03
申请号：US12311111
申请日：2007-07-20
申请人： Tetsuhiro Iida , Shin Matsukuma
发明人： Tetsuhiro Iida , Shin Matsukuma
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A Czochralski single crystal manufacturing apparatus uses multiple heaters to improve the controllability of crystal diameter. The power supplied to the multiple heaters is controlled so as to bring the pulling up speed close to a predetermined speed set value, and so as to bring the heater temperatures close to predetermined target temperature values. The ratio of electrical power between the heaters is controlled to agree with a predetermined power ratio set value which varies according to the crystal pulling up length, and the heater temperatures change along with this change, which causes disturbance to the diameter control. To compensate for this, heater temperature changes along with the power ratio set value change are taken into account in advance in the temperature set values. Accordingly, along with change of the power ratio set value, the temperature set values change to values appropriate for the current power ratio set value.
摘要翻译： Czochralski单晶制造装置使用多个加热器来提高晶体直径的可控性。控制提供给多个加热器的功率，以使提升速度接近预定的速度设定值，并使加热器温度接近预定的目标温度值。加热器之间的功率比被控制为与根据晶体拉长长度变化的预定功率比设定值一致，并且加热器温度随着该变化而变化，这导致对直径控制的干扰。为了补偿这一点，预先在温度设定值中考虑加热器温度随功率比设定值变化的变化。因此，随着功率比设定值的变化，温度设定值变为适合于当前功率比设定值的值。

3. 发明授权

US06179910B2 Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors 有权
标题翻译：制造适用于制造半导体的硅单晶和晶片的方法
公开(公告)号：US06179910B2
公开(公告)日：2001-01-30
申请号：US09396107
申请日：1999-09-14
申请人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.
摘要翻译：本发明提供一种制造单晶硅的方法。该方法尽管硅单晶的尺寸能够消除存在于硅单晶的深区域中的空隙缺陷。根据本发明的硅单晶在热氧化处理过程中拉动晶片的环形氧化诱导堆垛层错（OSF环）的半径大于晶片半径的一半。

4. 发明申请

US20080302295A1 Method of Evaluating Quality of Silicon Single Crystal 审中-公开
标题翻译：评估硅单晶质量的方法
公开(公告)号：US20080302295A1
公开(公告)日：2008-12-11
申请号：US11659061
申请日：2005-08-01
申请人： Toshirou Kotooka , Shin Matsukuma , Toshiaki Saishoji
发明人： Toshirou Kotooka , Shin Matsukuma , Toshiaki Saishoji
IPC分类号： C30B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B29/06
摘要： In the crystal growth rate (V), there is such a permissible range that the given quality of silicon single crystal can be maintained. This permissible range is determined in advance. The log data of crystal growth rate (V) is measured in the pulling up of silicon single crystal, and using the log data, the actual value of crystal growth rate (V) is determined. The actual value is compared with the permissible range. Any region of silicon single crystal corresponding to crystal growth rate (V) falling within the permissible range is judged as being a conforming region satisfying given standards, while any region of silicon single crystal corresponding to crystal growth rate (V) falling outside the permissible range is judged as being a defective region not satisfying given standards.
摘要翻译：在晶体生长速度（V）中，存在可以保持给定质量的硅单晶的允许范围。该容许范围是事先决定的。在单晶硅拉伸下测量晶体生长速率（V）的对数数据，使用对数数据，确定晶体生长速率（V）的实际值。将实际值与容许范围进行比较。对应于允许范围内的晶体生长速率（V）的硅单晶的任何区域被判定为满足给定标准的一致区域，而对应于超过容许范围的晶体生长速率（V）的硅单晶的任何区域被认为是不满足给定标准的缺陷区域。

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