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1. 发明授权

US6036776A Method and device for manufacturing single crystals 有权
标题翻译：单晶制造方法及装置
公开(公告)号：US6036776A
公开(公告)日：2000-03-14
申请号：US145083
申请日：1998-09-01
申请人： Toshiro Kotooka , Yoshiyuki Shimanuki , Makoto Kamogawa
发明人： Toshiro Kotooka , Yoshiyuki Shimanuki , Makoto Kamogawa
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： This invention provides a single-crystal manufacturing device which can perform the lifting of single crystals at a high speed, allowing single crystals with uniform qualities along their axes can be obtained.The method for manufacturing single crystals according to this invention are achieved by using a single-crystal manufacturing device provided with a combination of a heat shield plate 1 and an after-cooler 21. The heat shield plate 1, the thickness of the lower portion of which is 2-6 times that of a conventional heat shield plate, surrounds the single crystal 7 being lifted. The after-cooler 21 covers the top surface of the rim 1a of the heat shield plate 1 and encompasses the single crystal 7 being lifted. The amount of cooling water supplied to the after-cooler 21 is slowly increased until the time the single crystal is lifted to a preset length, and then the amount of cooling water is kept constant. By this means, the temperature gradients of the single crystal in the region near the solid-liquid boundary can be increased, and the shape of the single crystal lifted can be easily kept unchanged. Furthermore, the lifting speed of the single crystal is kept constant from the top to the bottom of the crystal. Compared with conventional methods, the single-crystal lifting speed can be multiplied by a value of 1.3-2.2. Therefore, single crystals with uniform qualities along their axes can be obtained.
摘要翻译：本发明提供一种能够高速地进行单晶提升的单晶体制造装置，能够得到沿其轴的质量均匀的单晶。根据本发明的单晶制造方法通过使用设置有隔热板1和后冷却器21的组合的单晶制造装置来实现。隔热板1的下部的厚度是常规隔热板的2-6倍，围绕提升的单晶7。后冷却器21覆盖隔热板1的边缘1a的上表面并且包围提升的单晶7。向后冷却器21供给的冷却水的量缓缓增加，直到单晶提升到预定长度为止，然后冷却水的量保持恒定。通过这种方式，可以增加固液界面附近的单晶的温度梯度，提高单晶的形状可以容易地保持不变。此外，单晶的提升速度从晶体的顶部到底部保持恒定。与常规方法相比，单晶提升速度可以乘以1.3-2.2的值。因此，可以获得沿其轴线均匀质量的单晶。

2. 发明申请

US20080311019A1 Apparatus for pulling single crystal by CZ method 审中-公开
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US20080311019A1
公开(公告)日：2008-12-18
申请号：US11981476
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C01B33/02 , H01L21/322
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

3. 发明授权

US5997635A Method for fabricating a single-crystal semiconductor 失效
标题翻译：制造单晶半导体的方法
公开(公告)号：US5997635A
公开(公告)日：1999-12-07
申请号：US10626
申请日：1998-01-22
申请人： Toshimichi Kubota , Toshiro Kotooka , Makoto Kamogawa
发明人： Toshimichi Kubota , Toshiro Kotooka , Makoto Kamogawa
IPC分类号： C30B15/14 , C30B15/22 , C30B29/06 , H01L21/208 , C30B15/18
CPC分类号： C30B15/14 , Y10T117/1004 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： An apparatus and a method for fabricating a single-crystal semiconductor by means of CZ method are provided for improving the quality control through the modification of thermal cycle of a pulled single-crystal semiconductor. The apparatus includes a ring after heater which is capable of elevation. The method decreases a temperature gradient to smaller than 20.degree. C./cm, and preferably under 15.degree. C./cm, when the pulled single-crystal semiconductor is cooled from 1200.degree. C. to 1000.degree. C. The after heater therefore heats the single-crystal semiconductor where there is a temperature of 100-300.degree. C. lower than the range of 1200-1000.degree. C. A thermal shelter is provided to retain a temperature gradient of larger than 20.degree. C./cm when the single-crystal semiconductor is within the temperature range between the melting point and 1250.degree. C. The after heater and the shelter can be raised to an upper portion when polysilicon blocks are charged and a twisting step is carried out.
摘要翻译：提供了一种通过CZ方法制造单晶半导体的装置和方法，用于通过改变拉制单晶半导体的热循环来改善质量控制。该装置包括能够升高的加热器后环。当将拉制的单晶半导体从1200℃冷却至1000℃时，该方法将温度梯度降低到小于20℃/ cm，优选在15℃/ cm以下。因此加热器因此加热单晶半导体，其温度为100-300℃，低于1200-1000℃的范围。提供热保护层以保持大于20℃/ cm的温度梯度，当单个晶体半导体在熔点和1250℃之间的温度范围内。当多晶硅块被充电并且进行扭转步骤时，后加热器和遮蔽物可以升高到上部。

4. 发明授权

US07727334B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US07727334B2
公开(公告)日：2010-06-01
申请号：US11809357
申请日：2007-05-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

5. 发明申请

US20090173272A1 Apparatus for pulling single crystal by CZ method 有权
公开(公告)号：US20090173272A1
公开(公告)日：2009-07-09
申请号：US12317695
申请日：2008-12-23
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , F28D15/00
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

6. 发明授权

US06858076B1 Method and apparatus for manufacturing single-crystal ingot 有权
标题翻译：制造单晶锭的方法和装置
公开(公告)号：US06858076B1
公开(公告)日：2005-02-22
申请号：US09569086
申请日：2000-05-10
申请人： Hirotaka Nakajima , Toshirou Kotooka , Yoshiyuki Shimanuki , Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa
发明人： Hirotaka Nakajima , Toshirou Kotooka , Yoshiyuki Shimanuki , Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa
IPC分类号： C30B15/14 , C30B29/06 , C30B13/30
CPC分类号： C30B15/14 , C30B29/06 , Y10T117/1032 , Y10T117/1068
摘要： There are provided a system for manufacturing a single-crystal ingot which is equipped with a cooler for cooling the single-crystal ingot being pulled and is capable of forming a tail without involvement of excessive heating of a crucible, as well as to a method for controlling the system. In a system for manufacturing a single-crystal ingot having a cooler for cooling a single-crystal ingot which is being pulled from molten raw material (called a single-crystal pulled ingot), when a tail of the single-crystal pulled ingot is formed, the cooler is moved away from the solid/melt interface between the single-crystal ingot and the molten raw material, to thereby reduce the power dissipated by the system. In the system, the cooler is moved upward after the end of a product area of the single-crystal ingot has been cooled until it passes through a grown-in defect temperature range.
摘要翻译：提供了一种用于制造单晶锭的系统，其具有用于冷却被拉动的单晶锭的冷却器，并且能够形成尾部而不涉及坩埚的过度加热，以及用于控制系统。在用于制造用于冷却从熔融原料（称为单晶拉锭）中拉出的单晶锭的冷却器的单晶锭的系统中，当形成单晶拉晶锭的尾部时，将冷却器从单晶锭和熔融原料之间的固体/熔融界面移开，从而减少系统消耗的功率。在系统中，冷却器在单晶锭的产品区域结束已经被冷却直到其通过生长的缺陷温度范围之后向上移动。

7. 发明授权

US06270575B1 Apparatus and a method of manufacturing a crystal 有权
标题翻译：装置及其制造方法
公开(公告)号：US06270575B1
公开(公告)日：2001-08-07
申请号：US09336906
申请日：1999-06-21
申请人： Shoei Kurosaka , Makoto Kamogawa , Nobuyuki Hukuda , Junsuke Tomioka
发明人： Shoei Kurosaka , Makoto Kamogawa , Nobuyuki Hukuda , Junsuke Tomioka
IPC分类号： C30B3500
CPC分类号： C30B15/20 , C30B15/22 , Y10S117/911 , Y10T117/1032
摘要： A value of electric current flowing a neck to a melt is detected, and it is judged that a breaking of the neck occurs when the detected value has been zero, and then a seed is lowered to dip a broken part on the melt. After that the seed is lifted again to restart a pulling operation.
摘要翻译：检测到将颈部流向熔体的电流的值，并且当检测值为零时，判断颈部发生断裂，然后降低种子以将破裂部分浸入熔体中。之后再次提升种子以重新开始拉动操作。

8. 发明申请

US20080311021A1 Apparatus for pulling single crystal by CZ method 审中-公开
公开(公告)号：US20080311021A1
公开(公告)日：2008-12-18
申请号：US11981477
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20 , C01B33/02
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

9. 发明授权

US06977010B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US06977010B2
公开(公告)日：2005-12-20
申请号：US10337456
申请日：2003-01-07
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , C30B15/14 , C30B15/30 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B35/00
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

10. 发明申请

US20050268840A1 Apparatus for pulling single crystal by CZ method 有权
公开(公告)号：US20050268840A1
公开(公告)日：2005-12-08
申请号：US11146541
申请日：2005-06-07
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , C30B15/14 , C30B15/30 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

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