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1. 发明申请

US20070227439A1 Method for manufacturing defect-free silicon single crystal 有权
标题翻译：无缺陷硅单晶的制造方法
公开(公告)号：US20070227439A1
公开(公告)日：2007-10-04
申请号：US11728739
申请日：2007-03-27
申请人： Takashi Yokoyama , Toshiaki Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
发明人： Takashi Yokoyama , Toshiaki Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/917 , Y10T117/1056
摘要： A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.
摘要翻译：提供了一种用于控制硅单晶侧表面温度梯度，固液界面高度和硅单晶长度方向氧浓度的方法，以制造无缺陷硅其浓度迅速且稳定地控制在预定值的单晶。通过在硅单晶周围配置圆筒状的冷却器，调整硅单晶的拉拔速度，存储熔融硅的坩埚的旋转速度和硅单晶的旋转速度，加热器在坩埚周围的硅单晶的长度方向分离成至少两个，侧面的温度梯度，固液界面的高度以及硅单晶的长度方向的氧浓度被控制。

2. 发明申请

US20070240629A1 Method for manufacturing a silicon single crystal 审中-公开
标题翻译：硅单晶的制造方法
公开(公告)号：US20070240629A1
公开(公告)日：2007-10-18
申请号：US11783544
申请日：2007-04-10
申请人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
发明人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
IPC分类号： C30B15/00 , C30B27/02
CPC分类号： C30B15/14 , C30B29/06
摘要： The present invention relates to a method for manufacturing a silicon single crystal by pulling up the silicon single crystal from a molten silicon by the CZ method, comprising: a cooling step of cooling the silicon single crystal by a cooler surrounding the silicon single crystal, and a heat shield body disposed surrounding an outer side and a lower side of the cooler while the silicon single crystal is being pulled up; and an Ms adjusting step of determining, in advance, an allowable range of a pulling speed at which a silicon single crystal having few crystal defects can be obtained by adjusting a distance (referred to “Ms”) from the lower surface of the heat shield body disposed on the lower side of the cooler to the surface of the molten silicon, wherein the silicon single crystal 11 is pulled up at a pulling speed within the allowable range thus determined.
摘要翻译：本发明涉及通过CZ法从熔融硅中提取硅单晶来制造单晶硅的方法，包括：冷却步骤，通过围绕硅单晶的冷却剂冷却硅单晶;以及隔热体，其在所述硅单晶被拉起的同时围绕所述冷却器的外侧和下侧设置; 以及Ms调整步骤，预先确定通过从隔热板的下表面调整距离（称为“Ms”），可以获得具有很少晶体缺陷的硅单晶的拉伸速度的允许范围本体设置在冷却器的下侧至熔融硅的表面，其中硅单晶11以这样确定的允许范围内的拉拔速度被拉起。

3. 发明授权

US07524371B2 Method for manufacturing defect-free silicon single crystal 有权
标题翻译：无缺陷硅单晶的制造方法
公开(公告)号：US07524371B2
公开(公告)日：2009-04-28
申请号：US11728739
申请日：2007-03-27
申请人： Takashi Yokoyama , Toshiaka Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
发明人： Takashi Yokoyama , Toshiaka Saishoji , Toshirou Kotooka , Kazuyoshi Sakatani
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/917 , Y10T117/1056
摘要： A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.
摘要翻译：提供了一种用于控制硅单晶侧表面温度梯度，固液界面高度和硅单晶长度方向氧浓度的方法，以制造无缺陷硅其浓度迅速且稳定地控制在预定值的单晶。通过在硅单晶周围配置圆筒状的冷却器，调整硅单晶的拉拔速度，存储熔融硅的坩埚的旋转速度和硅单晶的旋转速度，加热器在坩埚周围的硅单晶的长度方向分离成至少两个，侧面的温度梯度，固液界面的高度以及硅单晶的长度方向的氧浓度被控制。

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