专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07141113B1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer 有权
标题翻译：单晶硅的制造方法和单晶锭的制造装置以及硅晶片的热处理方法
公开(公告)号：US07141113B1
公开(公告)日：2006-11-28
申请号：US09856212
申请日：1999-11-19
申请人： Kozo Nakamura , Toshiaki Saishoji , Hirotaka Nakajima , Shinya Sadohara , Masashi Nishimura , Toshirou Kotooka , Yoshiyuki Shimanuki
发明人： Kozo Nakamura , Toshiaki Saishoji , Hirotaka Nakajima , Shinya Sadohara , Masashi Nishimura , Toshirou Kotooka , Yoshiyuki Shimanuki
IPC分类号： C30B33/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (° C./mm), V/G ranges from 0.16 to 0.18 mm2/° C. min between a crystal center position and a crystal outer periphery position, and a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13×1017 atoms/cm3, an initial heat treatment temperature is at least up to 500° C. and a temperature is raised at up to 1° C./min at least within 700 to 900° C., thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.
摘要翻译：一种通过切克劳斯基法生长硅晶体的方法，其中，拉伸速度为V（mm / min），拉伸轴方向的晶体内温度梯度的平均值在温度范围内，硅熔点至1350℃，为G（℃/ mm），V / G在晶体中心位置和晶体外周位置之间的范围为0.16至0.18mm 2 /℃，以及在温度范围内的牵引轴方向的晶体内温度梯度的平均值G的比G外部/ G中心，硅熔点为1350℃，晶体外表面与晶体的晶体温度梯度中心设置为1.10，从而获得高质量的完美晶体硅晶片。这种完美的晶体硅晶片，其中氧浓度被控制到高达13×10 17原子/ cm 3，初始热处理温度至少高达500℃ 并且在至少在700至900℃之间将温度升至高达1℃/分钟，从而使得晶片的径向分布均匀到任意的氧析出浓度水平。

2. 发明授权

US06869478B2 Method for producing silicon single crystal having no flaw 有权
标题翻译：无裂纹的硅单晶的制造方法
公开(公告)号：US06869478B2
公开(公告)日：2005-03-22
申请号：US10239593
申请日：2001-03-19
申请人： Kozo Nakamura , Toshiaki Saishoji , Shinji Togawa , Toshirou Kotooka , Susumu Maeda
发明人： Kozo Nakamura , Toshiaki Saishoji , Shinji Togawa , Toshirou Kotooka , Susumu Maeda
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/22 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1004 , Y10T117/1008 , Y10T117/1068
摘要： A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.
摘要翻译：一种在宽范围的区域内产生无缺陷的硅锭的稳定性和再现性的方法，其中当硅单晶（11）由硅熔体（13）拉出时，固液界面的形状（14），其中硅熔体（13）和硅单晶（11）之间的边界以及在被拉起的单晶的侧面（11b）上的温度分布被适当地控制。

3. 发明授权

US06179910B2 Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors 有权
标题翻译：制造适用于制造半导体的硅单晶和晶片的方法
公开(公告)号：US06179910B2
公开(公告)日：2001-01-30
申请号：US09396107
申请日：1999-09-14
申请人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.
摘要翻译：本发明提供一种制造单晶硅的方法。该方法尽管硅单晶的尺寸能够消除存在于硅单晶的深区域中的空隙缺陷。根据本发明的硅单晶在热氧化处理过程中拉动晶片的环形氧化诱导堆垛层错（OSF环）的半径大于晶片半径的一半。

4. 发明申请

US20100075267A1 SILICON WAFER HEAT TREATMENT METHOD 有权
标题翻译：硅波热处理方法
公开(公告)号：US20100075267A1
公开(公告)日：2010-03-25
申请号：US12443365
申请日：2007-09-28
申请人： Shinya Sadohara , Kozo Nakamura , Shiro Yoshino
发明人： Shinya Sadohara , Kozo Nakamura , Shiro Yoshino
IPC分类号： C30B15/14
CPC分类号： H01L21/324 , H01L21/3225 , H01L22/12
摘要： A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.
摘要翻译：通过确定在该条件下几乎不引起滑移位错和热处理硅晶片的热处理条件来制造优于半导体器件的硅晶片。通过使用用于从硅晶片中的氧沉淀的密度，尺寸和残留固溶度氧浓度来预测晶片的滑动阻力的计算公式，氧沉淀的状态使得不进行热处理来计算电阻导致任何滑移位错都可以进行设计，因此硅片热处理方法在热处理条件下不会产生滑脱错位。可以提供在这种条件下热处理的硅晶片。

5. 发明授权

US08573969B2 Silicon wafer heat treatment method 有权
标题翻译：硅晶片热处理方法
公开(公告)号：US08573969B2
公开(公告)日：2013-11-05
申请号：US12443365
申请日：2007-09-28
申请人： Shinya Sadohara , Kozo Nakamura , Shiro Yoshino
发明人： Shinya Sadohara , Kozo Nakamura , Shiro Yoshino
IPC分类号： F26B11/02 , C01B33/00 , C01B33/02
CPC分类号： H01L21/324 , H01L21/3225 , H01L22/12
摘要： A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.
摘要翻译：通过确定在该条件下几乎不引起滑移位错和热处理硅晶片的热处理条件来制造优于半导体器件的硅晶片。通过使用用于从硅晶片中的氧沉淀的密度，尺寸和残留固溶度氧浓度来预测晶片的滑动阻力的计算公式，氧沉淀的状态使得不进行热处理来计算电阻导致任何滑移位错都可以进行设计，因此硅片热处理方法在热处理条件下不会产生滑脱错位。可以提供在这种条件下热处理的硅晶片。

6. 发明申请

US20060016387A1 Silicon wafer, its manufacturing method, and its manufacturing apparatus 审中-公开
标题翻译：硅晶片及其制造方法及其制造装置
公开(公告)号：US20060016387A1
公开(公告)日：2006-01-26
申请号：US10534946
申请日：2003-11-14
申请人： Takashi Yokoyama , Koji Yoshihara , Toshiaki Saishoji , Kozo Nakamura , Ryota Suewa
发明人： Takashi Yokoyama , Koji Yoshihara , Toshiaki Saishoji , Kozo Nakamura , Ryota Suewa
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B15/203 , C30B15/14 , C30B15/206 , C30B29/06
摘要： The production yield about defect free devices is improved by so controlling the size and density of void defects that they are under predetermined levels without marring the productivity. The pull-up speed V of a silicon crystal (10) by a pull-up mechanism (4) is controlled, and the rate of cooling by a cooler (30) is also controlled. As a result, the axial temperature gradient G1 at and near the melting point of the silicon crystal (10) is increased. The growth condition V/G1 is lowered to a temperature near the critical value under the condition that the growth rate V lies in the range from 97% to 75% of the limit rate Vmax and that the solid-liquid interface is convex with respect to the melt surface. Thus a silicon crystal (10) is grown by pulling up.
摘要翻译：通过如此控制空隙缺陷的尺寸和密度，使其无缺陷的器件的生产率得到改善，而不损害生产率。通过上拉机构（4）控制硅晶体（10）的上拉速度V，并且还控制冷却器（30）的冷却速度。结果，硅晶体（10）的熔点和附近的轴向温度梯度G 1升高。在生长速度V处于极限速率Vmax的97％至75％的范围内，将生长条件V / G 1降低到接近临界值的温度，固体液体界面相对于熔体表面是凸的。因此，通过拉起来生长硅晶体（10）。

7. 发明申请

US20090061140A1 Silicon Single Crystal Producing Method, Annealed Wafer, and Method of Producing Annealed Wafer 有权
标题翻译：硅单晶生产方法，退火晶片，以及退火晶片的生产方法
公开(公告)号：US20090061140A1
公开(公告)日：2009-03-05
申请号：US11887244
申请日：2006-02-14
申请人： Shinya Sadohara , Ryota Suewaka , Shiro Yoshino , Kozo Nakamura , Yutaka Shiraishi , Syunji Nonaka
发明人： Shinya Sadohara , Ryota Suewaka , Shiro Yoshino , Kozo Nakamura , Yutaka Shiraishi , Syunji Nonaka
IPC分类号： B32B3/02 , H01L21/20
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , C30B33/02 , H01L21/3225 , Y10T428/21
摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.
摘要翻译：一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火的晶片是必需的，并且确保产生作为大量吸收源的BMD，以便稳定质量退火晶片。考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。或者，退火后通过抛光减少SSD。

8. 发明授权

US5948159A Method of controlling defects of a silicon single crystal 失效
标题翻译：控制硅单晶缺陷的方法
公开(公告)号：US5948159A
公开(公告)日：1999-09-07
申请号：US44125
申请日：1998-03-19
申请人： Kozo Nakamura , Toshiaki Saishoji , Toshimichi Kubota
发明人： Kozo Nakamura , Toshiaki Saishoji , Toshimichi Kubota
IPC分类号： C30B15/00 , C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： When the silicon single crystal is pulled up, the nucleation rate of the void cluster is obtained from the forming energy of the cluster of the vacancies in the silicon single crystal. The growth shrinkage of the cluster is obtained basing on the deviation of the flowing-into amount to the cluster of the vacancies and the self-interstitials, and the pulling-up speed or the temperature distribution of the furnace is modified to inhibit the growth of the cluster so as to inhibit the grown-in defects of the silicon single crystal.
摘要翻译：当单晶硅被拉起时，空穴簇的成核速率由硅单晶中的空位簇的形成能获得。基于流入量与空位簇和自填隙量的偏差获得簇的生长收缩率，并且修改炉的提升速度或温度分布以抑制生长从而抑制硅单晶的成长缺陷。

9. 发明授权

US06056931A Silicon wafer for hydrogen heat treatment and method for manufacturing the same 失效
标题翻译：氢热处理用硅片及其制造方法
公开(公告)号：US06056931A
公开(公告)日：2000-05-02
申请号：US14048
申请日：1998-01-27
申请人： Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： H01L21/02 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/322 , H01L21/324 , C01B33/26
CPC分类号： C30B33/02 , C30B29/06 , C30B33/00
摘要： In growing silicon single crystals by the CZ method, the cooling rate in the 1150-1080.degree. C. temperature zone (defect-forming temperature range) where the grown-in defects are formed is set at more than 2.0.degree. C./min to manufacture single crystals having an as-grown LSTD density of larger than 3.0.times.10.sup.6 /cm.sup.3 or a FPD density of larger than 6.0.times.10.sup.5 /cm.sup.3. As this single crystal has a small defect size, thus the dissolution rate of the defects increases by the heat treatment in a non-oxidizing atmosphere containing a hydrogen gas, so the effect of the hydrogen heat treatment can extend to the depth more than 3 .mu.m from the wafer surface.
摘要翻译：在通过CZ法生长的硅单晶中，形成生长缺陷的1150-1080℃温度区（缺陷形成温度范围）中的冷却速度设定在2.0℃/ min以上制造具有大于3.0×10 6 / cm 3的生长的LSTD密度或大于6.0×10 5 / cm 3的FPD密度的单晶。由于该单晶具有小的缺陷尺寸，因此通过在含有氢气的非氧化性气氛中的热处理而使缺陷的溶解速度增加，因此氢热处理的效果可以延伸至3μm以上的深度 m。

10. 发明授权

US07875116B2 Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer 有权
标题翻译：硅单晶制造方法，退火晶片，以及退火晶片的制造方法
公开(公告)号：US07875116B2
公开(公告)日：2011-01-25
申请号：US11887244
申请日：2006-02-14
申请人： Shinya Sadohara , Ryota Suewaka , Shiro Yoshino , Kozo Nakamura , Yutaka Shiraishi , Syunji Nonaka
发明人： Shinya Sadohara , Ryota Suewaka , Shiro Yoshino , Kozo Nakamura , Yutaka Shiraishi , Syunji Nonaka
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , C30B33/02 , H01L21/3225 , Y10T428/21
摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.
摘要翻译：一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火晶片是必需的，并且确保产生用作块体中的吸收源的BMD，以便稳定质量退火晶片。考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。或者，退火后通过抛光减少SSD。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式