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    • 7. 发明授权
    • Plasma treating apparatus
    • 等离子体处理装置
    • US5250137A
    • 1993-10-05
    • US731475
    • 1991-07-17
    • Junichi AramiToshihisa NozawaKeiji HoriokaKatsuya Okumura
    • Junichi AramiToshihisa NozawaKeiji HoriokaKatsuya Okumura
    • C23C14/40C23C14/50C23F4/00H01L21/00H01L21/302H01L21/3065H01L21/683B05C5/00
    • H01L21/67069H01L21/6831
    • A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.
    • 等离子体处理装置包括构成导电层的静电卡盘和夹在其间的导电层的绝缘层。 防止提供给基座的RF电流流入卡盘的导电层,以便抑制与电缆连接的电缆的RF电流泄漏,以用于高电压施加。 等离子体处理装置包括具有第一电极,设置在室内的第二电极的室,从外部插入室的圆柱形高频电源构件,使得构件的尖端连接到第二电极,高频 电源装置,用于通过所述电源构件向所述第二电极提供高频电力,以在所述室内的所述第一和第二电极之间的区域中产生等离子体;静电吸盘,其布置在所述第二电极上, 导电层形成在绝缘层内,用于施加高电压的电缆,所述电缆插入到电源构件中,并且尖端连接到静电卡盘的导电层,以及连接到电缆的电源。
    • 9. 发明授权
    • Magnetron plasma process apparatus
    • 磁控管等离子体处理装置
    • US06261428B1
    • 2001-07-17
    • US08183787
    • 1994-01-21
    • Toshihisa NozawaKeiji HoriokaIsahiro Hasegawa
    • Toshihisa NozawaKeiji HoriokaIsahiro Hasegawa
    • C23C1434
    • H01J37/3408H01J37/3455
    • A magnetron plasma process apparatus comprises a process chamber, an upper electrode and a lower electrode, both located within the process chamber and extending parallel to each other, a gas-supplying system for supplying a process gas into the space between the electrodes, a high-frequency power supply for generating an electric field, to thereby to form plasma from the process gas, and magnetic field generating section for generating a magnetic field which extends through the space between the electrodes. The magnetic field generating section has a pair of permanent magnets located outside the process chamber, sandwiching the space between the electrodes. The magnetic field generated by this section extends through said space, from one of the magnets to the other thereof and substantially parallel to the electrodes, and serves to achieve magnetron plasma process on an object placed on the lower electrode.
    • 磁控管等离子体处理装置包括处理室,上电极和下电极,两者都位于处理室内并且彼此平行延伸;气体供应系统,用于将处理气体供应到电极之间的空间中,高 用于产生电场,从而从处理气体形成等离子体的频率电源以及用于产生延伸穿过电极之间的空间的磁场的磁场产生部。 磁场产生部分具有位于处理室外的一对永磁体,夹在电极之间的空间。 由该部分产生的磁场延伸穿过所述空间,从一个磁体到另一个磁体并且基本上平行于电极,并且用于在放置在下电极上的物体上实现磁控管等离子体处理。
    • 10. 发明授权
    • Plasma generating apparatus and surface processing apparatus
    • 等离子体发生装置和表面处理装置
    • US5660744A
    • 1997-08-26
    • US492322
    • 1995-06-19
    • Makoto SekineKeiji HoriokaHaruo OkanoKatsuya OkumuraIsahiro HasegawaMasaki Narita
    • Makoto SekineKeiji HoriokaHaruo OkanoKatsuya OkumuraIsahiro HasegawaMasaki Narita
    • H01J37/32B23K10/00
    • H01J37/32623H01J37/3266
    • A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.
    • 表面处理装置包括:容器,其设置有第一电极和与第一电极相对设置的第二电极,用于支撑待处理的基板并在减压下填充气体;电场发生器,用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。 磁场发生器包括围绕容器布置成圆形的多个磁体元件组,以便形成环,每个磁体元件组具有指向圆心的合成磁化方向的轴线,并包括一个或多个 多个磁体元件,其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。 一个磁体元件组被设置成合成磁化方向与其轴线重合,并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于 一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。