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1. 发明申请

US20060251800A1 Contact metallization scheme using a barrier layer over a silicide layer 有权
公开(公告)号：US20060251800A1
公开(公告)日：2006-11-09
申请号：US11385344
申请日：2006-03-20
申请人： Timothy Weidman , Kapila Wijekoon , Zhize Zhu , Avgerinos Gelatos , Amit Khandelwal , Arulkumar Shanmugasundram , Michael Yang , Fang Mei , Farhad Moghadam
发明人： Timothy Weidman , Kapila Wijekoon , Zhize Zhu , Avgerinos Gelatos , Amit Khandelwal , Arulkumar Shanmugasundram , Michael Yang , Fang Mei , Farhad Moghadam
IPC分类号： B05D5/12
CPC分类号： C23C18/1678 , B82Y30/00 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/48 , C25D5/34 , H01L21/02063 , H01L21/02074 , H01L21/28518 , H01L21/28556 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76874 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

2. 发明授权

US07514353B2 Contact metallization scheme using a barrier layer over a silicide layer 有权
标题翻译：在硅化物层上使用阻挡层的接触金属化方案
公开(公告)号：US07514353B2
公开(公告)日：2009-04-07
申请号：US11385344
申请日：2006-03-20
申请人： Timothy W. Weidman , Kapila P. Wijekoon , Zhize Zhu , Avgerinos V. (Jerry) Gelatos , Amit Khandelwal , Arulkumar Shanmugasundram , Michael X. Yang , Fang Mei , Farhad K. Moghadam
发明人： Timothy W. Weidman , Kapila P. Wijekoon , Zhize Zhu , Avgerinos V. (Jerry) Gelatos , Amit Khandelwal , Arulkumar Shanmugasundram , Michael X. Yang , Fang Mei , Farhad K. Moghadam
IPC分类号： H01L21/4763
CPC分类号： C23C18/1678 , B82Y30/00 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/48 , C25D5/34 , H01L21/02063 , H01L21/02074 , H01L21/28518 , H01L21/28556 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76874 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.
摘要翻译：本发明的实施例通常提供了通过在接触特征上沉积阻挡层然后使用PVD，CVD，ALD，电化学电镀工艺（ECP）和/或无电镀沉积来填充层来填充形成在半导体器件中的接触电平特征的方法过程。在一个实施例中，阻挡层具有催化活性表面，其将允许在阻挡层上无电沉积金属。一方面，无电沉积金属是铜或铜合金。在一个方面，通过使用无电镀沉积工艺，用铜合金填充接触层的特征。另一方面，铜合金用于从导电铜层薄层中，该铜层用于随后通过使用ECP，PVD，CVD和/或ALD沉积工艺用含铜材料填充特征。在一个实施例中，阻挡层的一部分有意地被允许与触点电平特征的硅结处的痕迹的残余氧化物反应以形成低电阻连接。

3. 发明申请

US20060128150A1 Ruthenium as an underlayer for tungsten film deposition 失效
标题翻译：钌作为钨膜沉积的底层
公开(公告)号：US20060128150A1
公开(公告)日：2006-06-15
申请号：US11009331
申请日：2004-12-10
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.
摘要翻译：在一个实施例中，提供了一种在衬底上沉积含钨膜的方法，其包括在衬底上沉积阻挡层，例如含有钛或钽的阻挡层，并在阻挡层上沉积钌层。该方法还包括在钌层上沉积钨成核层并在钨成核层上沉积钨体层。优选通过ALD工艺，通过ALD工艺，CVD工艺或PVD工艺独立地沉积阻挡层，钌层，钨成核层和钨体层。在一些实例中，在沉积后续层之前，例如在阻挡层和钌层的沉积，钌层和钨成核层或钨成核层和钨体之间，将衬底暴露于浸泡工艺层。

4. 发明申请

US20060009034A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060009034A1
公开(公告)日：2006-01-12
申请号：US11038592
申请日：2005-01-19
申请人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
发明人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

5. 发明授权

US08551880B2 Ammonia-based plasma treatment for metal fill in narrow features 失效
标题翻译：氨基等离子体处理用于金属填充窄特征
公开(公告)号：US08551880B2
公开(公告)日：2013-10-08
申请号：US12262964
申请日：2008-10-31
申请人： Bencherki Mebarki , Amit Khandelwal , Linh H. Thanh
发明人： Bencherki Mebarki , Amit Khandelwal , Linh H. Thanh
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/76826 , H01L21/76828
摘要： A method for fabricating a semiconductor device is described. A substrate is provided having a patterned dielectric layer disposed thereon. A trench is formed in the dielectric layer. The surfaces of the trench are treated with an ammonia-based plasma process. A metal layer is then formed in the trench.
摘要翻译：对半导体装置的制造方法进行说明。提供了具有设置在其上的图案化电介质层的衬底。在电介质层中形成沟槽。用氨基等离子体处理处理沟槽的表面。然后在沟槽中形成金属层。

6. 发明授权

US07429402B2 Ruthenium as an underlayer for tungsten film deposition 失效
标题翻译：钌作为钨膜沉积的底层
公开(公告)号：US07429402B2
公开(公告)日：2008-09-30
申请号：US11009331
申请日：2004-12-10
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： C23C16/00 , H01L21/20 , H01L21/469
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.
摘要翻译：在一个实施例中，提供了一种在衬底上沉积含钨膜的方法，其包括在衬底上沉积阻挡层，例如含有钛或钽的阻挡层，并在阻挡层上沉积钌层。该方法还包括在钌层上沉积钨成核层并在钨成核层上沉积钨体层。优选通过ALD工艺，通过ALD工艺，CVD工艺或PVD工艺独立地沉积阻挡层，钌层，钨成核层和钨体层。在一些实例中，在沉积后续层之前，例如在阻挡层和钌层的沉积，钌层和钨成核层或钨成核层和钨体之间，将衬底暴露于浸泡工艺层。

7. 发明授权

US08071478B2 Method of depositing tungsten film with reduced resistivity and improved surface morphology 失效
标题翻译：沉积具有降低电阻率并改善表面形态的钨膜的方法
公开(公告)号：US08071478B2
公开(公告)日：2011-12-06
申请号：US12637864
申请日：2009-12-15
申请人： Kai Wu , Amit Khandelwal , Averginos V. Gelatos
发明人： Kai Wu , Amit Khandelwal , Averginos V. Gelatos
IPC分类号： H01L21/44
CPC分类号： H01L21/76876 , C23C16/02 , C23C16/045 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/76861 , H01L21/76877
摘要： A method of controlling the resistivity and morphology of a tungsten film is provided, comprising depositing a first film of a bulk tungsten layer on a substrate during a first deposition stage by (i) introducing a continuous flow of a reducing gas and a pulsed flow of a tungsten-containing compound to a process chamber to deposit tungsten on a surface of the substrate, (ii) flowing the reducing gas without flowing the tungsten-containing compound into the chamber to purge the chamber, and repeating steps (i) through (ii) until the first film fills vias in the substrate surface, increasing the pressure in the process chamber, and during a second deposition stage after the first deposition stage, depositing a second film of the bulk tungsten layer by providing a flow of reducing gas and tungsten-containing compound to the process chamber until a second desired thickness is deposited.
摘要翻译：提供了一种控制钨膜的电阻率和形态的方法，包括：在第一沉积阶段，通过（i）引入连续流动的还原气体和脉冲流将含钨化合物加入到处理室中，以沉积在基材表面上的钨，（ii）使还原气体流动，而不使含钨化合物流入室中以吹扫室，并重复步骤（i）至（ii）），直到第一膜填充衬底表面中的通孔，增加处理室中的压力，并且在第一沉积阶段之后的第二沉积阶段期间，通过提供还原气体和钨的流动沉积体钨层的第二膜包含化合物到处理室，直到沉积第二期望厚度。

8. 发明授权

US07964505B2 Atomic layer deposition of tungsten materials 有权
标题翻译：原子层沉积钨材料
公开(公告)号：US07964505B2
公开(公告)日：2011-06-21
申请号：US12121209
申请日：2008-05-15
申请人： Amit Khandelwal , Madhu Moorthy , Avgerinog V. Gelatos , Kai Wu
发明人： Amit Khandelwal , Madhu Moorthy , Avgerinog V. Gelatos , Kai Wu
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.
摘要翻译：本发明的实施方案提供了一种用于沉积含钨材料的改进方法。该方法利用诸如原子层沉积（ALD）的浸泡工艺和气相沉积工艺来提供具有显着改善的表面均匀性和生产水平生产量的钨膜。在一个实施例中，提供了一种用于在衬底上形成含钨材料的方法，其包括将衬底定位在处理室内，其中衬底包含设置在其上的底层，将衬底依次暴露于钨前体和还原气体在ALD工艺期间，在底层上沉积钨成核层，其中还原气体含有约40:1,100:1,500:1,800:1,1,000:1或更高的氢氢化物流速比，以及在钨成核层上沉积钨体层。还原气体含有氢化物化合物，例如乙硼烷，硅烷或乙硅烷。

9. 发明授权

US07838441B2 Deposition and densification process for titanium nitride barrier layers 失效
标题翻译：氮化钛阻挡层的沉积和致密化过程
公开(公告)号：US07838441B2
公开(公告)日：2010-11-23
申请号：US12426815
申请日：2009-04-20
申请人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
发明人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , H01L21/321 , H01L21/76843 , H01L21/76862
摘要： In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.
摘要翻译：在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层：将衬底暴露于等离子体工艺。在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。在另一示例中，在第二氮化钛层上沉积第三氮化钛层。随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。在一个示例中，每个氮化钛层可以具有约15埃的厚度，氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

10. 发明申请

US20080268635A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS 审中-公开
标题翻译：在铜接触应用中形成钴和钴硅材料的方法
公开(公告)号：US20080268635A1
公开(公告)日：2008-10-30
申请号：US12111930
申请日：2008-04-29
申请人： Sang-Ho Yu , Kevin Ti Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan , Amit Khandelwal , Kai Wu
发明人： Sang-Ho Yu , Kevin Ti Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan , Amit Khandelwal , Kai Wu
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/0227 , C23C16/08 , C23C16/42 , C23C16/4554 , C23C16/4586 , C23C16/56 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.
摘要翻译：本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。在一个实施例中，提供了一种在衬底上形成硅化钴材料的方法，其包括用至少一种预清洗方法处理衬底以暴露含硅表面，在含硅表面上沉积钴硅化物材料，以及沉积在钴硅化物材料上的铜材料。在另一个实施例中，在沉积铜材料之前，可以在钴硅化物材料上沉积金属钴材料。在一个示例中，铜材料可以通过在基底上沉积铜籽晶层和铜体积层而形成。铜种子层可以通过PVD工艺沉积，并且铜体积层可以通过ECP工艺或无电沉积工艺沉积。

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