专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07691442B2 Ruthenium or cobalt as an underlayer for tungsten film deposition 有权
标题翻译：钌或钴作为钨膜沉积的底层
公开(公告)号：US07691442B2
公开(公告)日：2010-04-06
申请号：US12197049
申请日：2008-08-22
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： B32B15/00 , B32B15/01 , C23C16/06
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.
摘要翻译：本发明的实施例提供了一种在衬底上沉积材料的方法。在一个实施例中，该方法包括在衬底上沉积含有钽或钛的阻挡层，在阻挡层上沉积钌层或钴层，并在其上沉积钨体层。在一些示例中，阻挡层可以包含通过原子层沉积（ALD）工艺沉积的氮化钽，可以通过化学气相沉积（CVD）工艺沉积钨体层，并且钌或钴层可以通过 ALD过程。在沉积钨体层之前的浸泡过程中，钌或钴层可以暴露于浸泡化合物，例如氢，乙硼烷，硅烷或乙硅烷。在一些实例中，在沉积钨体层之前，例如通过ALD，钨成核层可沉积在钌或钴层上。

2. 发明授权

US07678298B2 Tantalum carbide nitride materials by vapor deposition processes 有权
标题翻译：通过气相沉积工艺生产氮化钽材料
公开(公告)号：US07678298B2
公开(公告)日：2010-03-16
申请号：US11860952
申请日：2007-09-25
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/36 , C04B35/58007 , C04B35/6325 , H01L21/28202 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L29/518 , H01L29/78
摘要： Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 Ω/sq to about 1×106 Ω/sq.
摘要翻译：本发明的实施方案通常提供碳化钽氮化物材料的组合物。在一个实施方案中，提供了包含化学式TaC x N y的化合物碳氮化物材料的组合物，其中x在约0.20至约0.50的范围内，y在约0.20至约0.55的范围内，间隙/ 元素碳原子比为约2或更大，以及晶体结构。在一些实例中，组合物提供x在约0.25至约0.40，优选约0.30至约0.40的范围内，y在约0.30至约0.50，优选约0.35至约0.50的范围内。间隙/元素碳原子比可以是约3，约4或更大。该组合物还可以具有在约1×10 4Ω·cm-1至约1×10 6Ω·cm·cm 2的范围内的薄层电阻。

3. 发明授权

US07585762B2 Vapor deposition processes for tantalum carbide nitride materials 有权
标题翻译：碳化钽氮化物材料的气相沉积工艺
公开(公告)号：US07585762B2
公开(公告)日：2009-09-08
申请号：US11860945
申请日：2007-09-25
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , C23C16/36 , C23C16/45525 , C23C16/45542 , H01L21/28556 , H01L21/28562
摘要： Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
摘要翻译：本发明的实施方案通常提供了用于沉积碳化钽和氮化钽材料的组合物的方法。这些方法包括通过控制包括热分解，CVD，脉冲CVD或ALD在内的气相沉积工艺中的含氮气体的沉积温度和流速来形成碳化钽氮化物材料的预定组成的沉积工艺。在一个实施例中，提供了一种在衬底上形成含钽材料的方法，其包括将衬底加热到处理室内的温度，并将衬底暴露于含氮气体和含有钽前体气体的工艺气体同时在衬底上沉积碳化钽氮化物材料。该方法进一步提供了碳化钽氮化物材料是结晶的并且含有间隙碳和元素间碳/元素碳原子比大于1，例如约2,3,4或更大的元素碳。

4. 发明申请

US20080268171A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 有权
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20080268171A1
公开(公告)日：2008-10-30
申请号：US11873129
申请日：2007-10-16
申请人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了用于接收等离子体增强气相沉积室内的处理气体的等离子体挡板组件，其包括含有上表面以接收处理气体的等离子体挡板和用于发射处理气体的下表面，多个的开口，其被配置为使处理气体从上表面上方流动到下表面下方，其中每个开口定位在垂直于下表面的垂直轴线的预定角度以及在上表面上的锥形鼻锥。在一个示例中，开口是以预定角度定位的槽，以以圆形流动图案发射处理气体。

5. 发明申请

US20070235059A1 Method of recovering valuable material from exhaust gas stream of a reaction chamber 有权
标题翻译：从反应室的废气流中回收有价物质的方法
公开(公告)号：US20070235059A1
公开(公告)日：2007-10-11
申请号：US11400663
申请日：2006-04-07
申请人： Schubert Chu , Frederick Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
发明人： Schubert Chu , Frederick Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
IPC分类号： B08B6/00 , C25F1/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/52 , Y02C20/30 , Y10S438/905
摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.
摘要翻译：通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。等离子体的阻抗与钌浓度结合的测量提供了室清洁度的精确指示。

6. 发明申请

US20120315756A1 PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED 审中-公开
标题翻译：电镀铜沉积方法
公开(公告)号：US20120315756A1
公开(公告)日：2012-12-13
申请号：US13421434
申请日：2012-03-15
申请人： Timothy W. Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert S. Chu , Frederick C. Wu , Kavita Shah
发明人： Timothy W. Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert S. Chu , Frederick C. Wu , Kavita Shah
IPC分类号： H01L21/768
CPC分类号： C23C18/40 , C23C18/1608 , C23C18/165 , H01L21/288 , H01L21/76802 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76849 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L21/76877
摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.
摘要翻译：本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

7. 发明授权

US07682946B2 Apparatus and process for plasma-enhanced atomic layer deposition 有权
标题翻译：等离子体增强原子层沉积的装置和工艺
公开(公告)号：US07682946B2
公开(公告)日：2010-03-23
申请号：US11556763
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： H01L21/20
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide a method for forming a material on a substrate during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a method is provided which includes flowing at least one process gas through at least one conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, sequentially pulsing at least one chemical precursor into the process gas and igniting a plasma from the process gas to deposit a material on the substrate. In one example, the circular gas flow pattern has circular geometry of a vortex, a helix, a spiral, or a derivative thereof. Materials that may be deposited by the method include ruthenium, tantalum, tantalum nitride, tungsten or tungsten nitride. Other embodiments of the invention provide an apparatus configured to form the material during the PE-ALD process.
摘要翻译：本发明的实施例提供了在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间在衬底上形成材料的方法。在一个实施例中，提供了一种方法，其包括使至少一个处理气体流过至少一个管道以形成圆形气体流动图案，将基底暴露于圆形气体流动图案，将至少一种化学前体顺序地脉动到工艺气体并且从工艺气体点燃等离子体以将材料沉积在衬底上。在一个示例中，圆形气体流动图案具有涡旋，螺旋，螺旋或其衍生物的圆形几何形状。可以通过该方法沉积的材料包括钌，钽，氮化钽，钨或氮化钨。本发明的其它实施例提供一种被配置为在PE-ALD过程期间形成材料的装置。

8. 发明申请

US20090078916A1 TANTALUM CARBIDE NITRIDE MATERIALS BY VAPOR DEPOSITION PROCESSES 有权
标题翻译：通过蒸发沉积工艺制备碳化钨纳米材料
公开(公告)号：US20090078916A1
公开(公告)日：2009-03-26
申请号：US11860952
申请日：2007-09-25
申请人： KAVITA SHAH , Haichun Yang , Schubert S. Chu
发明人： KAVITA SHAH , Haichun Yang , Schubert S. Chu
IPC分类号： H01B1/04
CPC分类号： C23C16/36 , C04B35/58007 , C04B35/6325 , H01L21/28202 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L29/518 , H01L29/78
摘要： Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 Ω/sq to about 1×106 Ω/sq.
摘要翻译：本发明的实施方案通常提供碳化钽氮化物材料的组合物。在一个实施方案中，提供了包含化学式TaC x N y的化合物碳氮化物材料的组合物，其中x在约0.20至约0.50的范围内，y在约0.20至约0.55的范围内，间隙/ 元素碳原子比为约2或更大，以及晶体结构。在一些实例中，组合物提供x在约0.25至约0.40，优选约0.30至约0.40的范围内，y在约0.30至约0.50，优选约0.35至约0.50的范围内。间隙/元素碳原子比可以是约3，约4或更大。组合物还可以具有在约1×10 4Ω/ sq至约1×10 6Ω/ sq的范围内的薄层电阻。

9. 发明申请

US20070128864A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 有权
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070128864A1
公开(公告)日：2007-06-07
申请号：US11556763
申请日：2006-11-06
申请人： PAUL MA , KAVITA SHAH , DIEN-YEH WU , SESHADRI GANGULI , CHRISTOPHE MARCADAL , FREDERICK WU , SCHUBERT CHU
发明人： PAUL MA , KAVITA SHAH , DIEN-YEH WU , SESHADRI GANGULI , CHRISTOPHE MARCADAL , FREDERICK WU , SCHUBERT CHU
IPC分类号： H01L21/44
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide a method for forming a material on a substrate during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a method is provided which includes flowing at least one process gas through at least one conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, sequentially pulsing at least one chemical precursor into the process gas and igniting a plasma from the process gas to deposit a material on the substrate. In one example, the circular gas flow pattern has circular geometry of a vortex, a helix, a spiral, or a derivative thereof. Materials that may be deposited by the method include ruthenium, tantalum, tantalum nitride, tungsten or tungsten nitride. Other embodiments of the invention provide an apparatus configured to form the material during the PE-ALD process.
摘要翻译：本发明的实施例提供了在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间在衬底上形成材料的方法。在一个实施例中，提供了一种方法，其包括使至少一个工艺气体流过至少一个导管以形成圆形气体流动图案，将衬底暴露于圆形气体流动图案，将至少一种化学前体顺序地脉动到工艺气体并且从工艺气体点燃等离子体以将材料沉积在衬底上。在一个示例中，圆形气体流动图案具有涡旋，螺旋，螺旋或其衍生物的圆形几何形状。可以通过该方法沉积的材料包括钌，钽，氮化钽，钨或氮化钨。本发明的其它实施例提供一种被配置为在PE-ALD过程期间形成材料的装置。

10. 发明申请

US20070128863A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 失效
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070128863A1
公开(公告)日：2007-06-07
申请号：US11556758
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了一种用于在处理室内进行气相沉积工艺的盖组件，其包括绝缘盖和等离子体屏。在一个示例中，绝缘帽具有被配置为使第一处理气体从上表面流动到扩张通道的集中通道，以及构造成将第二处理气体从上表面流动到围绕扩展通道的凹槽的外通道。在一个示例中，等离子体屏幕具有包含具有多个孔的内部区域和具有多个狭槽的外部区域的上表面。绝缘帽可以位于等离子体屏幕的顶部，以形成具有扩展通道的集中气体区域和具有凹槽的圆形气体区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式