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    • 2. 发明授权
    • Exposure method
    • 曝光方法
    • US5610965A
    • 1997-03-11
    • US197569
    • 1994-02-17
    • Makiko MoriKunitaka OzawaKoji UdaIsamu ShimodaShunichi UzawaEiji Sakamoto
    • Makiko MoriKunitaka OzawaKoji UdaIsamu ShimodaShunichi UzawaEiji Sakamoto
    • G03F1/76G03F7/20H01L21/027G21K5/00
    • G03F7/70866G03F7/70875
    • A method of exposing a wafer to exposure energy such as ultraviolet rays or X-rays through a mask to transfer a pattern of the mask onto the wafer, for example. The temperature of the mask and/or the wafer increases during the exposure operation by absorption of the exposure energy. While the wafer is being exposed, the temperature of the mask and/or the wafer is detected. If the temperature is going to exceed an exposable temperature range determined on the basis of the line width of the pattern to be transferred, the exposure operation is interrupted. Then, the heat accumulated in the mask and/or the wafer is removed. Thereafter, the exposure operation is resumed. This is repeated until the predetermined or required amount of exposure is reached, for one shot. By this, thermal expansion of the mask and the wafer during the exposure operation is prevented to assure the precision of the pattern transfer.
    • 例如,通过掩模将晶片暴露于诸如紫外线或X射线的曝光能量以将掩模的图案转印到晶片上的方法。 掩模和/或晶片的温度在曝光操作期间通过吸收曝光能量而增加。 当晶片被暴露时,检测掩模和/或晶片的温度。 如果温度超过基于要传送的图案的线宽确定的可曝光温度范围,则曝光操作被中断。 然后,除去积存在掩模和/或晶片中的热量。 此后,恢复曝光操作。 一直重复直到达到预定或所需的曝光量。 由此,防止曝光操作期间的掩模和晶片的热膨胀,从而确保图案转印的精度。
    • 8. 发明授权
    • Exposure method
    • 曝光方法
    • US5498501A
    • 1996-03-12
    • US416503
    • 1995-04-04
    • Isamu ShimodaTakao KariyaNobutoshi MizusawaKunitaka OzawaShunichi Uzawa
    • Isamu ShimodaTakao KariyaNobutoshi MizusawaKunitaka OzawaShunichi Uzawa
    • G03F7/20G03F9/00
    • G03F7/70066G03F7/2022G03F7/7045Y10S438/949
    • A method of manufacturing of semiconductor devices, includes exposing different portions of a semiconductor substrate with a first exposure apparatus having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus, which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the entire second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.
    • 一种半导体器件的制造方法,包括用具有第一曝光范围的第一曝光装置曝光半导体衬底的不同部分; 将半导体衬底相对于第二曝光装置的第二曝光范围放置和对准,该范围大于第一曝光装置的第一曝光范围; 检测由第二曝光装置的第二曝光范围所覆盖的半导体衬底的每个部分的对准误差; 基于检测到的对准误差,计算半导体衬底的这些部分相对于第二曝光装置的整个第二曝光范围的总体对准误差; 并根据计算的整体对准误差来控制第二曝光装置的曝光操作。