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    • 1. 发明授权
    • Exposure method
    • 曝光方法
    • US5610965A
    • 1997-03-11
    • US197569
    • 1994-02-17
    • Makiko MoriKunitaka OzawaKoji UdaIsamu ShimodaShunichi UzawaEiji Sakamoto
    • Makiko MoriKunitaka OzawaKoji UdaIsamu ShimodaShunichi UzawaEiji Sakamoto
    • G03F1/76G03F7/20H01L21/027G21K5/00
    • G03F7/70866G03F7/70875
    • A method of exposing a wafer to exposure energy such as ultraviolet rays or X-rays through a mask to transfer a pattern of the mask onto the wafer, for example. The temperature of the mask and/or the wafer increases during the exposure operation by absorption of the exposure energy. While the wafer is being exposed, the temperature of the mask and/or the wafer is detected. If the temperature is going to exceed an exposable temperature range determined on the basis of the line width of the pattern to be transferred, the exposure operation is interrupted. Then, the heat accumulated in the mask and/or the wafer is removed. Thereafter, the exposure operation is resumed. This is repeated until the predetermined or required amount of exposure is reached, for one shot. By this, thermal expansion of the mask and the wafer during the exposure operation is prevented to assure the precision of the pattern transfer.
    • 例如,通过掩模将晶片暴露于诸如紫外线或X射线的曝光能量以将掩模的图案转印到晶片上的方法。 掩模和/或晶片的温度在曝光操作期间通过吸收曝光能量而增加。 当晶片被暴露时,检测掩模和/或晶片的温度。 如果温度超过基于要传送的图案的线宽确定的可曝光温度范围,则曝光操作被中断。 然后,除去积存在掩模和/或晶片中的热量。 此后,恢复曝光操作。 一直重复直到达到预定或所需的曝光量。 由此,防止曝光操作期间的掩模和晶片的热膨胀,从而确保图案转印的精度。
    • 9. 发明授权
    • Light quantity controlling apparatus
    • 光量控制装置
    • US5459573A
    • 1995-10-17
    • US291747
    • 1994-08-17
    • Naoto AbeKoji UdaIsamu ShimodaShunichi UzawaNoriyuki Nose
    • Naoto AbeKoji UdaIsamu ShimodaShunichi UzawaNoriyuki Nose
    • G01B11/00G01D5/26G03F9/00H01L21/68H01L31/12H01L33/00H01S5/06H01S5/062H01S5/0683G01N21/86
    • G03F9/7088G03F9/7049H01L21/68H01L21/682H01S5/06835H01S5/06216
    • A position detecting apparatus usable for aligning mask and a semiconductor wafer, wherein a laser beam produced by a semiconductor laser is projected through a predetermined optical system to alignment marks formed on the mask and the wafer, and the light reflected by the marks are detected by an accumulation type sensor to produce an electrical signal, from which the relative positional relation between the mask and the wafer are detected on the basis of the electrical signal. To obtain proper mark signals, the quantity of light incident on the accumulation sensor is controlled. In this apparatus, the beam emitting strength of the semiconductor laser is made constant, and the control of thee amount of light incident on the accumulation sensor is effected by controlling the operation period of the semiconductor laser. In addition, the actuation timing of the semiconductor laser is advanced from the accumulation start of the accumulation type sensor by the time required for the semiconductor laser to be thermally stabilized after its actuation. The mark detection signal produced by the accumulation sensor is precise.
    • 一种可用于对准掩模和半导体晶片的位置检测装置,其中由半导体激光器产生的激光束通过预定的光学系统投射到形成在掩模和晶片上的对准标记,并且由标记反射的光被 用于产生电信号的累积型传感器,根据电信号检测掩模和晶片之间的相对位置关系。 为了获得适当的标记信号,控制入射在累积传感器上的光量。 在该装置中,半导体激光器的发射光强度保持恒定,并且通过控制半导体激光器的工作周期来控制入射到积聚传感器上的光量。 此外,半导体激光器的激活定时从累积型传感器的累积开始到半导体激光器在其致动之后被热稳定所需的时间前进。 由积累传感器产生的标记检测信号是精确的。