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    • 4. 发明授权
    • Light quantity controlling apparatus
    • 光量控制装置
    • US5459573A
    • 1995-10-17
    • US291747
    • 1994-08-17
    • Naoto AbeKoji UdaIsamu ShimodaShunichi UzawaNoriyuki Nose
    • Naoto AbeKoji UdaIsamu ShimodaShunichi UzawaNoriyuki Nose
    • G01B11/00G01D5/26G03F9/00H01L21/68H01L31/12H01L33/00H01S5/06H01S5/062H01S5/0683G01N21/86
    • G03F9/7088G03F9/7049H01L21/68H01L21/682H01S5/06835H01S5/06216
    • A position detecting apparatus usable for aligning mask and a semiconductor wafer, wherein a laser beam produced by a semiconductor laser is projected through a predetermined optical system to alignment marks formed on the mask and the wafer, and the light reflected by the marks are detected by an accumulation type sensor to produce an electrical signal, from which the relative positional relation between the mask and the wafer are detected on the basis of the electrical signal. To obtain proper mark signals, the quantity of light incident on the accumulation sensor is controlled. In this apparatus, the beam emitting strength of the semiconductor laser is made constant, and the control of thee amount of light incident on the accumulation sensor is effected by controlling the operation period of the semiconductor laser. In addition, the actuation timing of the semiconductor laser is advanced from the accumulation start of the accumulation type sensor by the time required for the semiconductor laser to be thermally stabilized after its actuation. The mark detection signal produced by the accumulation sensor is precise.
    • 一种可用于对准掩模和半导体晶片的位置检测装置,其中由半导体激光器产生的激光束通过预定的光学系统投射到形成在掩模和晶片上的对准标记,并且由标记反射的光被 用于产生电信号的累积型传感器,根据电信号检测掩模和晶片之间的相对位置关系。 为了获得适当的标记信号,控制入射在累积传感器上的光量。 在该装置中,半导体激光器的发射光强度保持恒定,并且通过控制半导体激光器的工作周期来控制入射到积聚传感器上的光量。 此外,半导体激光器的激活定时从累积型传感器的累积开始到半导体激光器在其致动之后被热稳定所需的时间前进。 由积累传感器产生的标记检测信号是精确的。
    • 5. 发明授权
    • Exposure method
    • 曝光方法
    • US5443932A
    • 1995-08-22
    • US161099
    • 1993-12-03
    • Hirohisa OhtaKunitaka OzawaEigo KawakamiShunichi Uzawa
    • Hirohisa OhtaKunitaka OzawaEigo KawakamiShunichi Uzawa
    • G03F7/20G03F9/00H01L21/027H01L21/30
    • G03F9/7023G03F7/201
    • An exposure method includes disposing a mask and a semiconductor wafer opposed to each other in a close proximity relation with respect to a Z-axis direction and printing a pattern of the mask on each of different shot areas of the semiconductor wafer in a step-and-repeat manner, with a predetermined exposure energy. In this method, the spacing between the mask and the wafer for the paralleling of them is made larger than the spacing therebetween as assumed at the time of mask-to-wafer alignment with respect to X-Y plane or the spacing between the mask and the wafer as assumed at the time of exposure of the wafer to the mask. After the paralleling of the mask and the wafer, the mask and the wafer are moved closer to each other in the Z-axis direction and alignment and exposure is performed. This ensures that the alignment and exposure are effected at an optimum spacing while, on the other hand, contact of the mask and the wafer at the time of paralleling is precluded.
    • 曝光方法包括以相对于Z轴方向彼此紧密相对的方式设置掩模和半导体晶片,并且在半导体晶片的不同照射区域的每一个上以均匀的方式印刷掩模的图案,并且 以预定的曝光能量。 在这种方法中,掩模和与它们并联的晶片之间的间隔被制成大于它们之间的间隔,如假设在相对于XY平面的掩模到晶片对准时或掩模和晶片之间的间隔 如在晶片暴露于掩模时所假设的那样。 在掩模和晶片平行之后,掩模和晶片在Z轴方向上彼此靠近移动,并进行对准和曝光。 这确保了对准和曝光以最佳间隔进行,另一方面,阻止了并联时的掩模与晶片的接触。