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1. 发明授权

US5041729A Radiation detector and manufacturing process thereof 失效
标题翻译：辐射探测器及其制造工艺
公开(公告)号：US5041729A
公开(公告)日：1991-08-20
申请号：US261420
申请日：1988-10-24
申请人： Tetsuhiko Takahashi , Minoru Yoshida , Hiroshi Takeuchi , Hideji Fujii , Haruo Itho , Toshikazu Shimada , Kenji Maio
发明人： Tetsuhiko Takahashi , Minoru Yoshida , Hiroshi Takeuchi , Hideji Fujii , Haruo Itho , Toshikazu Shimada , Kenji Maio
IPC分类号： G01T1/20 , H01L27/146
CPC分类号： H01L27/14663 , G01T1/2018 , H01L27/14603 , H01L27/1462 , H01L27/1469 , H01L27/14692 , H01L2224/48091
摘要： A radiation detector for use on X-ray CT scanner with a plurality of elements arrayed to form a detector block, which is structured that a plurality of thin-film photodiodes consisting of amorphous silicon each are formed on the back of a scintillator block having a width to cover the plurality of elements, a platelike supporting member provided with signal lines on the back is bonded to cover the photodiodes, the photodiodes and the signal lines are connected together through wire bonding, the scintillator block is divided into each element across separators on the supporting member.
摘要翻译：一种用于X射线CT扫描器的放射线检测器，具有排列成多个元件以形成检测器块，其结构是在由闪烁体块的背面形成多个由非晶硅组成的薄膜光电二极管，该闪烁体块具有宽度以覆盖多个元件，在背面设置有信号线的板状支撑构件被接合以覆盖光电二极管，光电二极管和信号线通过引线接合连接在一起，闪烁体块被分成跨越隔板的每个元件支撑构件。

2. 发明授权

US4982095A Multi-element type radiation detector 失效
标题翻译：多元素型辐射探测器
公开(公告)号：US4982095A
公开(公告)日：1991-01-01
申请号：US239387
申请日：1988-09-01
申请人： Tetsuhiko Takahashi , Hirosh Takeuch , Toshikazu Shimada , Haruo Itoh , Tadaaki Hirai , Kenji Maio , Kenichi Okajima , Minoru Yoshida , Hideaki Yamamoto
发明人： Tetsuhiko Takahashi , Hirosh Takeuch , Toshikazu Shimada , Haruo Itoh , Tadaaki Hirai , Kenji Maio , Kenichi Okajima , Minoru Yoshida , Hideaki Yamamoto
IPC分类号： G01T1/20 , G01T1/24 , H01L31/0232 , H01L31/0376 , H01L31/109 , H01L31/115
CPC分类号： G01T1/2018 , H01L31/02322 , H01L31/03762 , H01L31/109 , H01L31/115 , Y02E10/548
摘要： This invention relates to a multi-element type radiation detector for an X-ray CT scanner system wherein a plurality of scintillator blocks that are isolated either optically or radiation-wise from one another are arranged integrally, and a photo-diode consisting of an amorphous silicon layer for converting the emission of each scintillator is formed on the surface of each scintillator block by thin film technique.
摘要翻译：本发明涉及一种用于X射线CT扫描仪系统的多元件型辐射检测器，其中以光学或辐射方式彼此隔离的多个闪烁器块整体地排列，并且由非晶体组成的光电二极管通过薄膜技术在每个闪烁体块的表面上形成用于转换每个闪烁体的发射的硅层。

3. 发明授权

US4937454A Radiation detector 失效
标题翻译：辐射检测器
公开(公告)号：US4937454A
公开(公告)日：1990-06-26
申请号：US273572
申请日：1988-11-21
申请人： Haruo Itoh , Toshikazu Shimada , Shin-ichi Muramatsu , Tetsuhiko Takahashi , Hiroshi Takeuchi
发明人： Haruo Itoh , Toshikazu Shimada , Shin-ichi Muramatsu , Tetsuhiko Takahashi , Hiroshi Takeuchi
IPC分类号： G01T1/20 , G01J1/02 , G01T1/24 , H01L31/0224 , H01L31/0232 , H01L31/0272 , H01L31/09 , H01L31/10 , H01L31/105
CPC分类号： H01L31/02322 , H01L31/022466 , H01L31/0272 , H01L31/1055
摘要： In a radiation detector having a scintillator and a photodiode in combination, an amorphous silicon diode of a refractive index of 3.5 or below is used for a photodector to have a decreased junction capacitance. This shifts the spectral sensitivity characteristic of the photodetector toward the short wavelength side, thus providing a low-noise, high-sensitivity radiation detector matched well with the emission spectrum of the scintillator.
摘要翻译：在具有闪烁体和光电二极管的放射线检测器中，折射率为3.5以下的非晶硅二极管用于光电转换器以具有降低的结电容。这将光电检测器的光谱灵敏度特性转移到短波长侧，从而提供与闪烁体的发射光谱良好匹配的低噪声，高灵敏度的辐射探测器。

4. 发明授权

US08776485B2 Form-fill-seal machine 有权
标题翻译：成型密封机
公开(公告)号：US08776485B2
公开(公告)日：2014-07-15
申请号：US13365091
申请日：2012-02-02
申请人： Satoshi Nishitsuji , Fumitaka Tokuda , Shinji Takeichi , Toshikazu Shimada , Toshiharu Kageyama , Toshikazu Shotsu
发明人： Satoshi Nishitsuji , Fumitaka Tokuda , Shinji Takeichi , Toshikazu Shimada , Toshiharu Kageyama , Toshikazu Shotsu
IPC分类号： B65B9/06
CPC分类号： B65B31/045 , B65B9/22 , B65B37/18 , B65B39/005 , B65B51/306 , B65B57/04
摘要： A form-fill-seal machine is capable of reducing poor sealing caused by a packaged article catching in lateral seal portions. The form-fill-seal machine is provided with an upper tube, a lower tube disposed therebelow, a former, a lateral sealing mechanism below the lower tube, and opening and closing sliding members. A packaged article is dropped through the interiors of the upper tube and the lower tube. The former winds a sheet of a film F around the circumference of the lower tube to convert same into a tubular film. The lateral sealing mechanism laterally seals the tubular film. The opening and closing sliding members, which are disposed between the upper tube and the lower tube, shut off an upwardly oriented flow of gas from the interior of the lower tube when in a closed state.
摘要翻译：成型填充密封机能够减少由封闭物品捕获在侧向密封部分中引起的不良密封。成型填充密封机设有上管，下管，下管，前成型机，下管下侧的横向密封机构，以及开闭滑动部件。包装物品通过上管和下管的内部落下。前者绕着下管的圆周缠绕一片薄膜F，以将其转换为管状薄膜。横向密封机构横向密封管状膜。设置在上管和下管之间的开闭滑动构件在处于关闭状态时，从下管的内部切断向上取向的气体流。

5. 发明授权

US4885614A Semiconductor device with crystalline silicon-germanium-carbon alloy 失效
标题翻译：具有晶体硅 - 锗 - 碳合金的半导体器件
公开(公告)号：US4885614A
公开(公告)日：1989-12-05
申请号：US216522
申请日：1988-07-08
申请人： Seijiro Furukawa , Hiroyuki Etoh , Akitoshi Ishizaka , Toshikazu Shimada
发明人： Seijiro Furukawa , Hiroyuki Etoh , Akitoshi Ishizaka , Toshikazu Shimada
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/26 , H01L29/165 , H01L29/737 , H01L29/778 , H01L31/0312 , H01L31/105 , H01L31/18
CPC分类号： H01L31/1812 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L29/165 , H01L29/7378 , H01L29/7781 , H01L31/0312 , H01L31/105 , Y02E10/50
摘要： The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.
摘要翻译：本发明公开了一种半导体器件，其包括由单晶硅或硅 - 锗合金制成的半导体层和由其上形成的硅 - 锗 - 碳合金制成的半导体层，其中两层在其间形成异质结。在这种器件中，层之间不发生晶格失配，或者即使发生晶格失配，仅仅是微小的，所以硅 - 锗 - 碳合金层不会引起其中的失配位错的危险。

6. 发明授权

US4337443A Semiconductor laser device with facet passivation film 失效
标题翻译：半导体激光器件具有刻面钝化膜
公开(公告)号：US4337443A
公开(公告)日：1982-06-29
申请号：US124266
申请日：1980-02-25
申请人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
发明人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of (.lambda./4).multidot.m where .lambda. represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.
摘要翻译：公开了一种半导体激光元件，其包括沉积在激光元件的至少光学输出面上的非晶材料的膜，并且包含硅和氢作为不可缺少的成分。优选在（λ/ 4）×m附近选择非晶膜的厚度，其中λ表示非晶膜中的激光的波长，m表示奇整数。可以将非透明绝缘材料的膜沉积在非晶膜上，从而构成复合膜。利用所公开的半导体激光元件的结构，可以将激光元件的阈值电流的增加抑制到最小，同时可以提高最大光输出功率。

7. 发明授权

US07053422B2 Solid-state self-emission display and its production method 失效
标题翻译：固态自发光显示及其制作方法
公开(公告)号：US07053422B2
公开(公告)日：2006-05-30
申请号：US10490660
申请日：2002-09-30
申请人： Masahiko Ando , Toshikazu Shimada , Masatoshi Shiiki , Shunri Oda , Nobuyoshi Koshida
发明人： Masahiko Ando , Toshikazu Shimada , Masatoshi Shiiki , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L33/00
CPC分类号： H05B33/145 , H05B33/10 , H05B33/22
摘要： The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost.Said apparatus has the luminous thin film made up by laminating or mixing crystal fine particle coated with insulator (5) of nm size and fluorescent fine particles (7) of nm size, and the lower electrode and the transparent upper electrode sandwiching said luminous thin film, wherein the electrons injected from said lower electrode are accelerated in the crystal fine particle coated with insulator layer (6) not being scattered by phonons to become high energy ballistic electrons, and form excitons (13) by colliding excitation of fluorescent fine particles. Since said fluorescent fine particles are of nm size, the exciton concentration is high, and luminescence intensity by extinction of excitons is also high.
摘要翻译：本发明提供一种高亮度，高效率，高可靠性，薄型的固态发光显示装置及其制造方法。所述装置具有通过层叠或混合涂覆有nm尺寸的绝缘体（5）和nm尺寸的荧光细颗粒（7）的结晶微粒组成的发光薄膜，并且下电极和透明上电极夹着所述发光薄膜其特征在于，从所述下部电极注入的电子在不被声子散射的绝缘体层（6）的结晶细小颗粒中被加速，成为高能量的弹道电子，并通过荧光细粒子的激发而形成激子（13）。由于所述荧光细粒子为nm大小，所以激子浓度高，激子的消光发光强度也高。

8. 发明授权

US06211531B1 Controllable conduction device 失效
标题翻译：可控导通装置
公开(公告)号：US06211531B1
公开(公告)日：2001-04-03
申请号：US09492171
申请日：2000-01-27
申请人： Kazuo Nakazato , Kiyoo Itoh , Hiroshi Mizuta , Toshikazu Shimada , Hideo Sunami , Tatsuya Teshima , Toshiyuki Mine , Ken Yamaguchi
发明人： Kazuo Nakazato , Kiyoo Itoh , Hiroshi Mizuta , Toshikazu Shimada , Hideo Sunami , Tatsuya Teshima , Toshiyuki Mine , Ken Yamaguchi
IPC分类号： H01L2906
CPC分类号： H01L27/10858 , B82Y10/00 , G11C11/16 , H01L21/28273 , H01L27/10808 , H01L27/1082 , H01L27/10873 , H01L27/10876 , H01L27/11 , H01L29/154 , H01L29/42324 , H01L29/66825 , H01L29/772 , H01L29/78609 , H01L29/78618 , H01L29/78642 , H01L29/78687 , H01L29/7881 , H01L29/882
摘要： A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple tunnel junction configuration in the conduction path, with the result that current leakage is blocked by the multiple tunnel junction configuration when the transistor is in its off state. Vertical and lateral transistor configurations are described, together with use of the transistor in complimentary pairs and for a random access memory cell. Improved gate structures are described which are also applicable to memory devices that incorporate the tunnel barrier configuration to store charge on the memory node.
摘要翻译：晶体管形式的可控导电器件包括源极和漏极区域5，其间延伸用于电荷载流子的导电路径P，用于控制沿导电路径的电荷载流子的栅极4和提供多个导通路径中的隧道结结构，结果当晶体管处于其截止状态时，漏电流被多重隧道结构造阻塞。描述了垂直和横向晶体管配置，以及使用晶体管的互补对和随机存取存储器单元。描述了改进的栅极结构，其也适用于结合隧道势垒配置以在存储器节点上存储电荷的存储器件。

9. 发明授权

US5521390A Nanodisplacement producing apparatus 失效
标题翻译：纳米置换制造装置
公开(公告)号：US5521390A
公开(公告)日：1996-05-28
申请号：US341949
申请日：1994-11-16
申请人： Toshihiko Sato , Masakazu Ichikawa , Toshikazu Shimada
发明人： Toshihiko Sato , Masakazu Ichikawa , Toshikazu Shimada
IPC分类号： G02F1/39 , G01B11/14 , G01Q90/00 , G12B1/00 , H01J37/20
CPC分类号： G01Q10/04 , B82Y35/00 , G12B1/00 , H01J37/20 , Y10S977/868
摘要： An optical nanodisplacement producing apparatus is realized by employing an optical parametric oscillator of which cavity length is varied in correspondence with a wavelength or the intensity of the output light signal to achieve a fine-displacement producing mechanism. An optical nanodisplacement producing apparatus having high resolution less than 0.1 nm and a highly stable characteristic is realized as a very fine pattern forming/monitoring apparatus.
摘要翻译：通过采用光学参数振荡器来实现光学纳米位置产生装置，其中腔长度与输出光信号的波长或强度相对应地变化，以实现精细位移产生机制。作为非常精细的图案形成/监视装置，实现了具有小于0.1nm的高分辨率和高度稳定特性的光学纳米置换产生装置。

10. 发明授权

US4642412A Photo-electronic conversion apparatus with light pattern discriminator 失效
标题翻译：具有光图案鉴别器的光电转换装置
公开(公告)号：US4642412A
公开(公告)日：1987-02-10
申请号：US759961
申请日：1985-07-29
申请人： Shinichi Muramatsu , Toshikazu Shimada , Sunao Matsubara , Haruo Itoh , Nobuo Nakamura
发明人： Shinichi Muramatsu , Toshikazu Shimada , Sunao Matsubara , Haruo Itoh , Nobuo Nakamura
IPC分类号： H01L31/04 , H01L31/042 , H01L25/02 , H01L27/14
CPC分类号： H01L31/02024 , Y10S136/291
摘要： A plurality of photovoltaic devices (e.g., solar cells) connect with each other and form a photo-electric conversion apparatus. The photovoltaic devices concerned are so connected with each other that when a given pattern of light is irradiated upon the photo-electric conversion apparatus concerned, the electrical output generated when the whole of it is irradiated is smaller than that generated when some parts of it are irradiated. Since an electronic system equipped with this apparatus as a power supply can be designed to work when the apparatus is irradiated with such a pattern of light that irradiates only a part of the apparatus, an electronic system having such an identifying faculty can be made easily.Further, an apparatus like this type may be made by connecting the elements of this apparatus in series or in reverse direction to form units, and by connecting this plurality of units in series and/or in parallel.
摘要翻译：多个光电器件（例如，太阳能电池）彼此连接并形成光电转换设备。所涉及的光电器件彼此连接，当给定的光模式照射到所涉及的光电转换装置时，当其整个照射时产生的电输出小于其一些部分产生的电输出照射。由于配备有该设备作为电源的电子系统可以被设计成当用仅照射设备的一部分的这种模式照射设备时工作，可以容易地制造具有这样的识别人员的电子系统。此外，这种类型的装置可以通过将该装置的元件串联或反向连接来形成单元，并且通过串联和/或并联连接多个单元来进行。

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