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1. 发明授权

US07053422B2 Solid-state self-emission display and its production method 失效
标题翻译：固态自发光显示及其制作方法
公开(公告)号：US07053422B2
公开(公告)日：2006-05-30
申请号：US10490660
申请日：2002-09-30
申请人： Masahiko Ando , Toshikazu Shimada , Masatoshi Shiiki , Shunri Oda , Nobuyoshi Koshida
发明人： Masahiko Ando , Toshikazu Shimada , Masatoshi Shiiki , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L33/00
CPC分类号： H05B33/145 , H05B33/10 , H05B33/22
摘要： The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost.Said apparatus has the luminous thin film made up by laminating or mixing crystal fine particle coated with insulator (5) of nm size and fluorescent fine particles (7) of nm size, and the lower electrode and the transparent upper electrode sandwiching said luminous thin film, wherein the electrons injected from said lower electrode are accelerated in the crystal fine particle coated with insulator layer (6) not being scattered by phonons to become high energy ballistic electrons, and form excitons (13) by colliding excitation of fluorescent fine particles. Since said fluorescent fine particles are of nm size, the exciton concentration is high, and luminescence intensity by extinction of excitons is also high.
摘要翻译：本发明提供一种高亮度，高效率，高可靠性，薄型的固态发光显示装置及其制造方法。所述装置具有通过层叠或混合涂覆有nm尺寸的绝缘体（5）和nm尺寸的荧光细颗粒（7）的结晶微粒组成的发光薄膜，并且下电极和透明上电极夹着所述发光薄膜其特征在于，从所述下部电极注入的电子在不被声子散射的绝缘体层（6）的结晶细小颗粒中被加速，成为高能量的弹道电子，并通过荧光细粒子的激发而形成激子（13）。由于所述荧光细粒子为nm大小，所以激子浓度高，激子的消光发光强度也高。

2. 发明授权

US07306990B2 Information storage element, manufacturing method thereof, and memory array 失效
标题翻译：信息存储元件，其制造方法和存储器阵列
公开(公告)号：US07306990B2
公开(公告)日：2007-12-11
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336 , H01L21/00 , H01L29/788 , H01L21/3205 , H01L21/4763 , H01L29/76
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译：一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

3. 发明申请

US20060051920A1 Information storage element, manufacturing method thereof, and memory array 失效
标题翻译：信息存储元件，其制造方法和存储器阵列
公开(公告)号：US20060051920A1
公开(公告)日：2006-03-09
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译：一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

4. 发明申请

US20100193362A1 METHOD FOR PROCESSING SILICON BASE MATERIAL, ARTICLE PROCESSED BY THE METHOD, AND PROCESSING APPARATUS 审中-公开
标题翻译：加工硅基材料的方法，方法处理的方法和加工装置
公开(公告)号：US20100193362A1
公开(公告)日：2010-08-05
申请号：US12451357
申请日：2008-05-09
申请人： Terunori Warabisako , Toshikazu Shimada , Nobuyoshi Koshida , Bernard Gelloz , Keiichi Kanehori
发明人： Terunori Warabisako , Toshikazu Shimada , Nobuyoshi Koshida , Bernard Gelloz , Keiichi Kanehori
IPC分类号： C25F3/00 , C25F7/00 , C01B33/02
CPC分类号： B23H3/06 , B23H3/08 , C25D5/022 , C25D5/04 , C25D17/001 , C25D17/10 , C25D17/12 , C25F3/12 , C25F3/14 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In a state where a silicon base material (1) is used as an anode, a fine platinum member (2) is used as a cathode, and an electrolyte solution (4) is arranged between the anode and the cathode, anodic oxidation is performed in constant current mode under the conditions where porous formation mode and electrolytic polishing mode coexist. The platinum member (2) is fitted in the silicon base material (1) with silicon elution, and processes such as hole making, cutting, single-side pressing are performed. Since the silicon base material can be processed at a room temperature with small energy, the crystal quality of the processing surface is not deteriorated. Thus, efficient and highly accurate processing can be performed without using a mechanical method, which consumes much material in conventional processes such as cutting of solar cell silicon base material, and without using laser whose energy unit cost is high, and furthermore, without leaving a crystal damage on a processed surface.
摘要翻译：在使用硅基材料（1）作为阳极的状态下，使用精细的铂元件（2）作为阴极，并且在阳极和阴极之间配置电解质溶液（4），进行阳极氧化在多孔形成模式和电解抛光模式共存的条件下，以恒流模式。铂元件（2）通过硅洗脱装配在硅基材（1）中，进行制孔，切割，单面压制等处理。由于硅基材料能够在室温下以小的能量进行处理，所以处理用面的结晶品质不会变差。因此，可以进行高效且高精度的处理，而不需要使用在诸如太阳能电池硅基材料的切割等常规工艺中消耗大量材料的机械方法，并且不使用能量单位成本高的激光，而且不会留下加工表面上的晶体损坏。

5. 发明授权

US07119361B2 Luminescence stabilization of anodically oxidized porous silicon layers 失效
公开(公告)号：US07119361B2
公开(公告)日：2006-10-10
申请号：US10972550
申请日：2004-10-25
申请人： David John Lockwood , Rabah Boukherroub , Danial D. M. Wayner , Nobuyoshi Koshida
发明人： David John Lockwood , Rabah Boukherroub , Danial D. M. Wayner , Nobuyoshi Koshida
IPC分类号： H01L29/08
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

6. 发明申请

US20050085001A1 Luminescence stabilization of anodically oxidized porous silicon layers 失效
标题翻译：阳极氧化多孔硅层的发光稳定性
公开(公告)号：US20050085001A1
公开(公告)日：2005-04-21
申请号：US10972550
申请日：2004-10-25
申请人： David Lockwood , Rabah Boukherroub , Danial Wayner , Nobuyoshi Koshida
发明人： David Lockwood , Rabah Boukherroub , Danial Wayner , Nobuyoshi Koshida
IPC分类号： C25D11/32 , H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
摘要翻译：多孔硅结构通过阳极氧化该结构而稳定化，然后进行化学官能化以保护未氧化的表面区域，优选在1-癸烯存在下在热条件下进行。该方法在结构表面上产生保护性有机单层，使其高度稳定。

7. 发明申请

US20110204290A1 SILICON-BASED BLUE-GREEN PHOSPHORESCENT MATERIAL OF WHICH LUMINESCENCE PEAK CAN BE CONTROLLED BY EXCITATION WAVELENGTH AND PROCESS FOR PRODUCING SILICON-BASED BLUE-GREEN PHOSPHORESCENT MATERIAL 审中-公开
标题翻译：通过激发波长控制光亮度的硅基蓝绿色荧光材料和生产基于硅的蓝绿色磷光体材料的方法
公开(公告)号：US20110204290A1
公开(公告)日：2011-08-25
申请号：US13061592
申请日：2009-08-26
申请人： Nobuyoshi Koshida , Bernard Gelloz
发明人： Nobuyoshi Koshida , Bernard Gelloz
IPC分类号： C09K11/59 , B82Y30/00 , B82Y40/00
CPC分类号： C09K11/59
摘要： Provided is a silicon-based blue phosphorescent material having a longer luminescence lifetime, a high luminescence intensity, and excellent long-term stability and reproducibility. A method for producing a silicon-based blue-green phosphorescent material controllable by an excitation wavelength, which comprises a first step of anodizing the surface of silicon to prepare a nanocrystal silicon or a nanostructure silicon, a second step of processing the nanocrystal silicon or the nanostructure silicon prepared in the first step for rapid thermal oxidation, and a third step of processing the nanocrystal silicon or nanostructure silicon having been processed for rapid thermal oxidation in the second step, for high-pressure water vapor annealing. Further, a silicon-based blue-green phosphorescent material controllable by an excitation wavelength, which comprises a silicon oxide film in which numerous nanoscale crystal silicon or nanostructure silicon embedded therein, and which has a transition property between molecular energy levels through triplet excitons having a relaxation time of not shorter than 1 ms, or luminescence transition through quasi-stable excitation or trap having a relaxation time of not shorter than 1 ms.
摘要翻译：具有发光寿命长，发光强度高，长期稳定性和再现性优异的硅系蓝色磷光材料。一种可由激发波长控制的硅基蓝绿色磷光发光材料的制造方法，其特征在于，包括对硅表面进行阳极氧化以制备纳米晶体硅或纳米结构硅的第一工序，将纳米晶硅或第在第一步中制备的用于快速热氧化的纳米结构硅，以及在第二步骤中处理用于快速热氧化的纳米晶体硅或纳米结构硅的第三步骤，用于高压水蒸气退火。此外，由激发波长控制的硅基蓝绿色磷光材料，其包含其中嵌入有许多纳米级晶体硅或纳米结构硅的氧化硅膜，并且其具有通过三线态激子的分子能级之间的转移特性，具有不小于1ms的弛豫时间，或具有不小于1ms的弛豫时间的准稳态激发或阱的发光跃迁。

8. 发明申请

US20100025145A1 PRESSURE WAVE GENERATOR AND TEMPERATURE CONTROLLING METHOD THEREOF 失效
标题翻译：压力波发生器及其温度控制方法
公开(公告)号：US20100025145A1
公开(公告)日：2010-02-04
申请号：US12521120
申请日：2007-12-17
申请人： Masato Hayashi , Masami Yakabe , Nobuyoshi Koshida
发明人： Masato Hayashi , Masami Yakabe , Nobuyoshi Koshida
IPC分类号： G10K15/04 , H05B1/02
CPC分类号： G10K15/04
摘要： A pressure wave generator (1) includes a thermally conductive substrate (2), a heat insulating layer (3) formed on one main surface of the substrate (2), an insulator layer (5) formed on the heat insulating layer (3), and a heat generator (4) formed on the insulator layer (5) to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer (3) is formed containing at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum oxide (Al2O3), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator (4) is formed containing, for example, gold (Au) or tungsten (W).
摘要翻译：压力波发生器（1）包括导热基板（2），形成在基板（2）的一个主表面上的绝热层（3），形成在绝热层（3）上的绝缘体层（5）以及形成在所述绝缘体层（5）上的热发生器（4），以在施加包含交替分量的电流时产生热量。该绝热层（3）形成为含有氮化硅（Si 3 N 4），二氧化硅（SiO 2），氧化铝（Al 2 O 3），氧化镁（MgO），金刚石结晶碳（C），氮化铝（AlN），和碳化硅（SiC）。形成有例如金（Au）或钨（W）的发热体（4）。

9. 发明申请

US20090078928A1 LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND INFORMATION DISPLAY DEVICE 审中-公开
标题翻译：发光元件，发光装置和信息显示装置
公开(公告)号：US20090078928A1
公开(公告)日：2009-03-26
申请号：US11658578
申请日：2004-07-27
申请人： Nobuyoshi Koshida , Akira Kojima
发明人： Nobuyoshi Koshida , Akira Kojima
IPC分类号： H01L33/00
CPC分类号： H01L51/52 , H01L51/0059 , H01L51/5092
摘要： A light-emitting device has a structure in which a semiconductor or a conductive substrate having a bottom electrode, a layer for generating hot electrons, quasi-ballistic electrons or ballistic electrons, a luminous layer, and a semitransparent surface electrode are deposited, or a structure in which a holes supply layer is provided between the luminous layer and the semitransparent surface electrode having the same structure. The light-emitting device realizes highly efficient light emission in a range from infrared rays to ultraviolet ray with smaller driving current than that of conventional injection-type or intrinsic EL devices.
摘要翻译：发光装置具有其中沉积具有底部电极，产生热电子的层，准弹道电子或弹道电子的半导体或导电基板，发光层和半透明表面电极的结构，或者在具有相同结构的发光层和半透明表面电极之间设置有空穴供给层的结构。发光装置在比传统的注射型或本征EL器件的驱动电流小的红外线到紫外线的范围内实现高效的发光。

10. 发明申请

US20050201575A1 Thermally excited sound wave generating device 审中-公开
标题翻译：热激声波发生装置
公开(公告)号：US20050201575A1
公开(公告)日：2005-09-15
申请号：US10524585
申请日：2004-02-27
申请人： Nobuyoshi Koshida , Kenji Tsubaki
发明人： Nobuyoshi Koshida , Kenji Tsubaki
IPC分类号： G10K15/04 , H04R23/00 , H04R25/00
CPC分类号： H04R23/002 , G10K15/04
摘要： A thermally induced sound wave generating device comprising a thermally conductive substrate, a head insulation layer formed on one surface of the substrate, and a heating element thin film formed on the heat insulation layer and in the form of an electrically driven metal film, and wherein when the heat conductivity of the thermally conductive substrate is set as αs and its heat capacity is set as Cs, and the thermal conductivity of the beat insulation layer is set as αI and its heat capacity is set as CI, relation of 1/100≧αICI/αSCS and αSCS≧100×106 is realized. This is a new technical means capable of greatly improving the function of a pressure generating device based on thermal induction.
摘要翻译：一种热诱导声波发生装置，包括导热基板，形成在所述基板的一个表面上的磁头绝缘层和形成在所述绝热层上并以电驱动的金属膜的形式的加热元件薄膜，当将导热性基板的导热率设定为αS，将其热容设定为C _{，将隔热层的导热率设定为其热容量被设定为C I I I，其中，1/100> = 1 > /> S /> S和/或S / S> 实现了。这是一种能够大大提高基于热感应的压力发生装置的功能的新的技术手段。}

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