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1. 发明申请

US20080076616A1 Hybrid vehicle 有权
标题翻译：混合动力汽车
公开(公告)号：US20080076616A1
公开(公告)日：2008-03-27
申请号：US11902405
申请日：2007-09-21
申请人： Teruhisa Kidokoro , Kenji Honda , Naohisa Morishita
发明人： Teruhisa Kidokoro , Kenji Honda , Naohisa Morishita
IPC分类号： F16H37/06 , B60K6/20 , G06F17/00 , F02D7/00
CPC分类号： B60K6/485 , B60K1/02 , B60K6/405 , B60K6/442 , B60K6/547 , B60T1/10 , B60T7/042 , F16H57/0421 , F16H57/0457 , Y02T10/6226 , Y02T10/6234 , Y10T477/23
摘要： A hybrid vehicle is provided with a first transmission passage for transmitting driving force of an engine to driving wheels and a second transmission passage for transmitting driving force of a driving motor to the driving wheels, and driven by selectively using or in combination of the first transmission passage and the second transmission passage. The hybrid vehicle includes: a first input gear for inputting the driving force of the engine; a second input gear for inputting the driving force of the driving motor; and an idle gear meshed with the first input gear and the second input gear, and transmitting at least one of the driving force of the engine and the driving force of the driving motor toward the driving wheels. The driving force to be input from at least one of the first input gear and the second input gear is transmitted to the driving wheels via the idle gear and the final differential gears.
摘要翻译：混合动力车辆设置有用于将发动机的驱动力传递到驱动轮的第一传动通道和用于将驱动电机的驱动力传递到驱动轮的第二传动通道，并且通过选择性地使用或组合第一传动通道和第二传输通道。混合动力车辆包括：用于输入发动机的驱动力的第一输入齿轮; 用于输入驱动电动机的驱动力的第二输入齿轮; 以及与第一输入齿轮和第二输入齿轮啮合的空转齿轮，并且将发动机的驱动力和驱动马达的驱动力中的至少一个传递到驱动轮。从第一输入齿轮和第二输入齿轮中的至少一个输入的驱动力经由空转齿轮和最终差速齿轮传递到驱动轮。

2. 发明授权

US07845444B2 Hybrid vehicle 有权
标题翻译：混合动力汽车
公开(公告)号：US07845444B2
公开(公告)日：2010-12-07
申请号：US11902405
申请日：2007-09-21
申请人： Teruhisa Kidokoro , Kenji Honda , Naohisa Morishita
发明人： Teruhisa Kidokoro , Kenji Honda , Naohisa Morishita
IPC分类号： B60K6/445
CPC分类号： B60K6/485 , B60K1/02 , B60K6/405 , B60K6/442 , B60K6/547 , B60T1/10 , B60T7/042 , F16H57/0421 , F16H57/0457 , Y02T10/6226 , Y02T10/6234 , Y10T477/23
摘要： A hybrid vehicle is provided with a first transmission passage for transmitting driving force of an engine to driving wheels and a second transmission passage for transmitting driving force of a driving motor to the driving wheels, and driven by selectively using or in combination of the first transmission passage and the second transmission passage. The hybrid vehicle includes: a first input gear for inputting the driving force of the engine; a second input gear for inputting the driving force of the driving motor; and an idle gear meshed with the first input gear and the second input gear, and transmitting at least one of the driving force of the engine and the driving force of the driving motor toward the driving wheels. The driving force to be input from at least one of the first input gear and the second input gear is transmitted to the driving wheels via the idle gear and the final differential gears.
摘要翻译：混合动力车辆设置有用于将发动机的驱动力传递到驱动轮的第一传动通道和用于将驱动马达的驱动力传递到驱动轮的第二传递通道，并且通过选择性地使用或组合第一传动通道和第二传输通道。混合动力车辆包括：用于输入发动机的驱动力的第一输入齿轮; 用于输入驱动电动机的驱动力的第二输入齿轮; 以及与第一输入齿轮和第二输入齿轮啮合的空转齿轮，并且将发动机的驱动力和驱动马达的驱动力中的至少一个传递到驱动轮。从第一输入齿轮和第二输入齿轮中的至少一个输入的驱动力经由空转齿轮和最终差速齿轮传递到驱动轮。

3. 发明授权

US08028779B2 Hybrid vehicle 有权
标题翻译：混合动力汽车
公开(公告)号：US08028779B2
公开(公告)日：2011-10-04
申请号：US11819839
申请日：2007-06-29
申请人： Naohisa Morishita , Toshiyuki Yumoto , Kazuyuki Iwata , Kenji Honda , Junji Urano
发明人： Naohisa Morishita , Toshiyuki Yumoto , Kazuyuki Iwata , Kenji Honda , Junji Urano
IPC分类号： B60W10/04
CPC分类号： B60W20/20 , B60K1/02 , B60K6/365 , B60K6/442 , B60K6/445 , B60L11/14 , B60L11/16 , B60L15/2054 , B60L2240/486 , B60L2240/507 , B60W10/06 , B60W10/10 , B60W10/115 , B60W20/00 , Y02T10/6234 , Y02T10/6239 , Y02T10/645 , Y02T10/70 , Y02T10/7077 , Y02T10/72 , Y02T10/7275
摘要： The present invention provides a hybrid vehicle including a first transmission path that transmits a traction of an engine to driving wheels and a second transmission path that transmits a traction of a motor to the driving wheels, and the hybrid vehicle runs by alternatively selecting either the first or second transmission path or in combination thereof. The first transmission path has a first reduction gear ratio that is defined to be smaller than a reduction gear ratio at which a maximum vehicle speed can be achieved by the traction of the engine alone.
摘要翻译：本发明提供了一种混合动力车辆，其包括将发动机的牵引力传递到驱动轮的第一传递路径和将马达的牵引传递到驱动轮的第二传递路径，并且混合动力车辆通过交替地选择第一或第二传输路径或其组合。第一传动路径具有第一减速比，其被限定为小于仅通过发动机的牵引能够实现最大车速的减速比。

4. 发明申请

US20080006467A1 Hybrid vehicle 有权
标题翻译：混合动力汽车
公开(公告)号：US20080006467A1
公开(公告)日：2008-01-10
申请号：US11819839
申请日：2007-06-29
申请人： Naohisa Morishita , Toshiyuki Yumoto , Kazuyuki Iwata , Kenji Honda , Junji Urano
发明人： Naohisa Morishita , Toshiyuki Yumoto , Kazuyuki Iwata , Kenji Honda , Junji Urano
IPC分类号： B60K17/06
CPC分类号： B60W20/20 , B60K1/02 , B60K6/365 , B60K6/442 , B60K6/445 , B60L11/14 , B60L11/16 , B60L15/2054 , B60L2240/486 , B60L2240/507 , B60W10/06 , B60W10/10 , B60W10/115 , B60W20/00 , Y02T10/6234 , Y02T10/6239 , Y02T10/645 , Y02T10/70 , Y02T10/7077 , Y02T10/72 , Y02T10/7275
摘要： The present invention provides a hybrid vehicle including a first transmission path that transmits a traction of an engine to driving wheels and a second transmission path that transmits a traction of a motor to the driving wheels, and the hybrid vehicle runs by alternatively selecting either the first or second transmission path or in combination thereof. The first transmission path has a first reduction gear ratio that is defined to be smaller than a reduction gear ratio at which a maximum vehicle speed can be achieved by the traction of the engine alone.
摘要翻译：本发明提供了一种混合动力车辆，其包括将发动机的牵引力传递到驱动轮的第一传递路径和将马达的牵引传递到驱动轮的第二传递路径，并且混合动力车辆通过交替地选择第一或第二传输路径或其组合。第一传动路径具有第一减速比，其被限定为小于仅通过发动机的牵引能够实现最大车速的减速比。

5. 再颁专利

USRE42180E1 Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same 有权
标题翻译：在源极/漏极区域上具有金属硅化物层和栅电极的半导体器件及其制造方法
公开(公告)号：USRE42180E1
公开(公告)日：2011-03-01
申请号：US12212105
申请日：2008-09-17
申请人： Hisato Oyamatsu , Kenji Honda
发明人： Hisato Oyamatsu , Kenji Honda
IPC分类号： H01L31/113 , H01L29/76
CPC分类号： H01L21/28568 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L27/0207 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底中的元件隔离区域，形成在半导体衬底中并在元件隔离区域外部并且在其表面上形成有金属硅化物层的真实元件区域，以及虚拟元件元件区域形成在半导体衬底中并且在元件隔离区域外部并且在其表面上形成有金属硅化物层。在包括元件区域的1μm平方的感兴趣范围内占有的实数元素区域和虚设元素区域的图案区域之和的比率为25％以上。

6. 发明申请

US20080259680A1 Memory Element and Method for Manufacturing Same 失效
标题翻译：记忆元素及其制造方法
公开(公告)号：US20080259680A1
公开(公告)日：2008-10-23
申请号：US11575091
申请日：2005-11-04
申请人： Hiroyuki Nishide , Kenji Honda , Yasunori Yonekuta , Takashi Kurata , Shigemoto Abe
发明人： Hiroyuki Nishide , Kenji Honda , Yasunori Yonekuta , Takashi Kurata , Shigemoto Abe
IPC分类号： G11C11/34 , H01S4/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/15 , H01L27/285 , H01L51/0595 , Y10T29/49002
摘要： A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.
摘要翻译：一种新颖的非易失性存储元件，其可以通过使用有机材料通过简单且高收率的方法制造并具有高的开/关比率，以及制造这种非易失性存储元件的方法。在阳极层（12）和阴极层（16）之间设置由绝缘自由基聚合物构成的开关层（14）。此外，在开关层（14）和阳极层（12）之间设置有空穴注入传输层（13），以及在开关层（14）和阴极层（16）之间的电子注入传输层（15））。在切换层和相邻层之间设置中间层。自由基聚合物优选为氮氧自由基聚合物。通过湿法堆叠形成开关层（14），空穴注入传输层（13）和电子注入传输层（15）。

7. 发明授权

US07365949B2 CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction 有权
标题翻译： CPP巨磁阻头包括在高度方向上延伸的钉扎磁性层
公开(公告)号：US07365949B2
公开(公告)日：2008-04-29
申请号：US11141543
申请日：2005-05-31
申请人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
发明人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39 , G11B5/3163 , G11B5/398
摘要： A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.
摘要翻译： CPP巨磁阻头包括下屏蔽层; 上屏蔽层; 和在下屏蔽层和上屏蔽层之间的巨磁阻元件（GMR）。 GMR包括非磁性材料层; 钉扎磁性层; 和自由磁性层。被钉扎层和自由层与其间设置的非磁性层层叠。 A电流垂直于GMR的膜平面流动，被钉扎的磁性层在高度方向上比在轨道宽度方向上延伸更长，并且包括GMR中的第一部分。第一部分设置在非磁性层和自由层的上方或下方。第二部分在非磁性层的后面，高度方向上是自由层。第一和第二部分在同一平面内。第一部分中的钉扎宽度方向上的被钉扎层的宽度大于第二部分的宽度。

8. 发明申请

US20050106833A1 Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same 有权
标题翻译：在源极/漏极区域上具有金属硅化物层和栅电极的半导体器件及其制造方法
公开(公告)号：US20050106833A1
公开(公告)日：2005-05-19
申请号：US10837748
申请日：2004-05-04
申请人： Hisato Oyamatsu , Kenji Honda
发明人： Hisato Oyamatsu , Kenji Honda
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L21/76 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L27/02 , H01L27/04 , H01L27/088 , H01L29/78 , H01L21/00 , H01L21/44 , H01L21/4763 , H01L21/84
CPC分类号： H01L21/28568 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L27/0207 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底中的元件隔离区域，形成在半导体衬底中并在元件隔离区域外部并且在其表面上形成有金属硅化物层的真实元件区域，以及虚拟元件元件区域形成在半导体衬底中并且在元件隔离区域外部并且在其表面上形成有金属硅化物层。在包括元件区域的1个平均兴趣范围内占有的实数元素区域和虚设元素区域的图案区域之和的比率为25％以上。

9. 发明授权

US06791804B2 Magnetoresistive-effect device and method for manufacturing the same 失效
标题翻译：磁阻效应器件及其制造方法
公开(公告)号：US06791804B2
公开(公告)日：2004-09-14
申请号：US10337479
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

10. 发明授权

US06690554B2 Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same 失效
标题翻译：具有扩展AFM层的磁阻效应器件及其制造方法
公开(公告)号：US06690554B2
公开(公告)日：2004-02-10
申请号：US10337188
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

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