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1. 发明授权

US06587315B1 Magnetoresistive-effect device with a magnetic coupling junction 失效
标题翻译：具有磁耦合结的磁阻效应器件
公开(公告)号：US06587315B1
公开(公告)日：2003-07-01
申请号：US09487691
申请日：2000-01-19
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

2. 发明授权

US06791804B2 Magnetoresistive-effect device and method for manufacturing the same 失效
标题翻译：磁阻效应器件及其制造方法
公开(公告)号：US06791804B2
公开(公告)日：2004-09-14
申请号：US10337479
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

3. 发明授权

US06690554B2 Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same 失效
标题翻译：具有扩展AFM层的磁阻效应器件及其制造方法
公开(公告)号：US06690554B2
公开(公告)日：2004-02-10
申请号：US10337188
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

4. 发明授权

US06538858B1 Spin-valve thin film element and method of manufacturing the same 失效
标题翻译：旋转阀薄膜元件及其制造方法
公开(公告)号：US06538858B1
公开(公告)日：2003-03-25
申请号：US09491397
申请日：2000-01-25
申请人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3218 , H01F10/324 , H01F10/3268 , H01F41/325
摘要： In the present invention, hard bias layers are arranged in the same layer level as a free magnetic layer, and the upper surfaces of the hard bias layers are joined to the sides of a lamination at positions lower than the upper edges of the sides of the lamination above a substrate. The upper surfaces of the hard bias layers are also joined to the sides of the lamination at the same position as or positions lower than the uppermost position of the hard bias layers above the substrate. A spin-valve thin film element is provided having a decrease in an effective magnetic field applied to the free magnetic layer, and a magnetic field in the direction opposite to the magnetization direction of the free magnetic layer, permitting sufficient control of the magnetic domain of the free magnetic layer, and exhibiting excellent stability. The present invention also provides a method of manufacturing the spin-valve thin film element.
摘要翻译：在本发明中，将硬偏置层设置在与自由磁性层相同的层次上，并且将硬偏置层的上表面与叠层的侧面接合，层压在基材上方。硬偏置层的上表面也在与基板上方的硬偏置层的最上位置相同的位置处或者位于比位置低的位置处接合到层压体的侧面。提供了一种自旋阀薄膜元件，其具有施加到自由磁性层的有效磁场的减小和与自由磁性层的磁化方向相反的方向的磁场，从而允许充分控制磁畴的磁畴自由磁性层，稳定性优异。本发明还提供一种制造自旋阀薄膜元件的方法。

5. 发明授权

US07054115B2 Spin-valve thin-film magnetic element and method for making the same 有权
标题翻译：旋转阀薄膜磁性元件及其制造方法
公开(公告)号：US07054115B2
公开(公告)日：2006-05-30
申请号：US09774781
申请日：2001-01-30
申请人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/302 , H01F41/325 , Y10T29/49034 , Y10T29/49044
摘要： A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.
摘要翻译：自旋阀薄膜磁性元件包括基板，形成在其上的复合物，以及形成在复合体两侧的电极层。复合材料包括反铁磁性层，钉扎磁性层，非磁性导电层，自由磁性层，平均自由路径延伸层和交换偏置层。平均自由路径延伸层可以是背层或镜面反射层。平均自由路径延伸层延长了自旋阀薄膜磁性元件中自旋向上传导电子的平均自由程。该自旋阀薄膜磁性元件满足趋向于较窄轨道宽度的趋势。

6. 发明授权

US06756135B2 Spin valve thin-film magnetic element 失效
标题翻译：自旋阀薄膜磁性元件
公开(公告)号：US06756135B2
公开(公告)日：2004-06-29
申请号：US09879381
申请日：2001-06-12
申请人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3143 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/1936 , H01F10/3268 , H01F41/325 , Y10S428/90 , Y10T428/1143 , Y10T428/1186 , Y10T428/12465 , Y10T428/1259
摘要： A spin valve thin-film magnetic element has an improved rate of change in resistance (&Dgr;R/R) that can be used for a narrower magnetic track. The spin valve thin-film magnetic element has a laminate that include an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic conductive layer, a free magnetic layer, a back layer, specular-reflection layers and a pair of electrode layers formed at the two sides of the laminate. Preferably the specular reflection layer includes an oxide, such as &agr;-Fe2O3 or NiO, or a half-metal Heusler alloy, such as NiMnSb or PtMnSb.
摘要翻译：自旋阀薄膜磁性元件具有可用于较窄磁道的电阻变化率（DeltaR / R）。自旋阀薄膜磁性元件具有包括反铁磁层，钉扎磁性层，非磁性导电层，自由磁性层，背层，镜面反射层和形成在层压板的两面。优选地，镜面反射层包括氧化物，例如α-Fe 2 O 3或NiO，或半金属Heusler合金，例如NiMnSb或PtMnSb。

7. 发明授权

US06847508B2 Spin valve thin film magnetic element and thin film magnetic head 有权
标题翻译：旋转阀薄膜磁性元件和薄膜磁头
公开(公告)号：US06847508B2
公开(公告)日：2005-01-25
申请号：US09727180
申请日：2000-11-30
申请人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa , Yoshihiko Kakihara , Kenji Honda
发明人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa , Yoshihiko Kakihara , Kenji Honda
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/32 , H01L43/08 , G11B5/127 , G11B5/339
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F41/325
摘要： The present invention provides a spin valve thin film magnetic element including a laminate in which an antiferromagnetic layer, a pinned magnetic layer provided in contact with the antiferromagnetic layer so that the magnetization direction is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer provided in contact with the pinned magnetic layer, a second free magnetic layer provided in contact with the nonmagnetic conductive layer, a nonmagnetic intermediate layer provided in contact with the second free magnetic layer, a first free magnetic layer provided in contact with the nonmagnetic intermediate layer and antiferromagnetically coupled with the second free magnetic layer to form a ferrimagnetic state together with the second free magnetic layer, and a backed layer provided in contact with the first free magnetic layer and having higher conductivity than the first free magnetic layer are laminated. The present invention also provides a magnetic head using the spin valve thin film magnetic element.
摘要翻译：本发明提供了一种自旋阀薄膜磁性元件，其包括层叠体，其中反铁磁层，与反铁磁性层接触的被钉扎的磁性层，使得磁化方向被与反铁磁性层的交换耦合磁场固定，设置成与被钉扎的磁性层接触的非磁性导电层，与非磁性导电层接触设置的第二自由磁性层，与第二自由磁性层接触设置的非磁性中间层，与第二自由磁性层接触的第一自由磁性层非磁性中间层与第二自由磁性层反铁磁耦合以与第二自由磁性层一起形成亚铁磁状态，并且与第一自由磁性层接触并具有比第一自由磁性层更高的导电性的背衬层被层压。本发明还提供一种使用自旋阀薄膜磁性元件的磁头。

8. 发明授权

US06762916B2 Thin-film magnetic head with low barkhausen noise and floating-type magnetic head therewith 失效
标题翻译：具有低巴克豪森噪声和浮动式磁头的薄膜磁头
公开(公告)号：US06762916B2
公开(公告)日：2004-07-13
申请号：US09751267
申请日：2000-12-29
申请人： Daigo Aoki , Yoshihiko Kakihara
发明人： Daigo Aoki , Yoshihiko Kakihara
IPC分类号： G11B530
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A thin-film magnetic head includes a spin-valve thin-film magnetic element, first and second insulating layers, and first and second shielding layers. The spin-valve thin-film magnetic element includes a free magnetic layer, a nonmagnetic conductive layer, a pinned magnetic layer, an antiferromagnetic layer, a pair of bias layers, and a pair of conductive layers. The pair of conductive layers is located on one side in the thickness direction of the free magnetic layer, and the pair of bias layers is located on the other side in the thickness direction of the free magnetic layer, is disposed on both sides in the track width direction of at least a portion of the second insulating layer, and is in contact with the free magnetic layer.
摘要翻译：薄膜磁头包括自旋阀薄膜磁性元件，第一和第二绝缘层以及第一和第二屏蔽层。自旋阀薄膜磁性元件包括自由磁性层，非磁性导电层，钉扎磁性层，反铁磁层，一对偏置层和一对导电层。一对导电层位于自由磁性层的厚度方向的一侧，该对偏置层位于自由磁性层的厚度方向的另一侧，配置在轨道的两侧第二绝缘层的至少一部分的宽度方向，并且与自由磁性层接触。

9. 发明授权

US07243412B2 Method of manufacturing a magnetic head using a magneto-resistive effect 有权
标题翻译：使用磁阻效应制造磁头的方法
公开(公告)号：US07243412B2
公开(公告)日：2007-07-17
申请号：US10218247
申请日：2002-08-14
申请人： Akio Furukawa , Yoshihiko Kakihara
发明人： Akio Furukawa , Yoshihiko Kakihara
IPC分类号： G11B5/187
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： A method of manufacturing a magnetic head including a magnetic sensing portion formed of a magnetoresistive effect element, a magnetoresistive effect magnetic head manufacturing method depositing, via a film deposition process, a lamination layer having a free layer comprised of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer comprised of a ferromagnetic material, an antiferromagnetic layer for fixing the magnetization of said fixed layer, a magnetic flux introducing layer with a tip end of which is opposed to a surface which is brought in contact with or opposed to a magnetic recording medium, and a spacer layer interposed between said free layer and said fixed layer; patterning at least said free layer and said fixed layer with a mask such that opposing side surfaces of said free layer and said fixed layer are formed of one continuous surface; and forming hard magnetic layers having high or low resistance for maintaining a magnetic stability of said free layer in contact with said opposing side surfaces.
摘要翻译：一种制造磁头的方法，该磁头包括由磁阻效应元件形成的磁感测部分，磁阻效应磁头制造方法通过膜沉积工艺沉积具有由软磁性材料构成的自由层的层压层，磁化响应于外部磁场而旋转，由铁磁材料构成的固定层，用于固定所述固定层的磁化的反铁磁层，其末端与其表面相对的磁通量引入层与磁记录介质接触或相对，以及插入在所述自由层和所述固定层之间的间隔层; 使用掩模对至少所述自由层和所述固定层进行图案化，使得所述自由层和所述固定层的相对侧表面由一个连续表面形成; 以及形成具有高或低电阻的硬磁性层，以保持所述自由层与所述相对的侧表面接触的磁稳定性。

10. 发明授权

US06614629B1 Thin film magnetic head providing an essentially warp-free upper shield layer and floating magnetic head using the same 失效
标题翻译：薄膜磁头提供基本无翘曲的上屏蔽层和使用其的浮动磁头
公开(公告)号：US06614629B1
公开(公告)日：2003-09-02
申请号：US09626475
申请日：2000-07-26
申请人： Yoshihiko Kakihara
发明人： Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903
摘要： The present invention provides a thin film magnetic head which is prevented from producing a great step in an upper shield layer and which can decrease the probability of a short circuit between the upper shield layer or lower shield layer and a spin-valve thin film magnetic element. The thin film magnetic head includes a spin-valve thin film magnetic element including a lamination of a free magnetic layer, a nonmagnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer, a pair of conductive layers for supplying a sensing current to the free magnetic layer, and a pair of insulating bias layers for orienting the magnetization direction of the free magnetic layer; and a pair of shield layers laminated on both sides of the spin-valve thin film magnetic element in the direction of the thickness thereof. The thin film magnetic head also has a projection formed on one of the shield layers to project toward the spin-valve thin film magnetic element side so that the pair of insulating bias layers are arranged on both sides of the projection in the direction of the track width.
摘要翻译：本发明提供一种薄膜磁头，其防止在上屏蔽层中产生大的台阶，并且可以降低上屏蔽层或下屏蔽层与自旋阀薄膜磁性元件之间短路的可能性。薄膜磁头包括自由阀薄膜磁性元件，该自旋阀薄膜磁性元件包括自由磁性层，非磁性导电层，钉扎磁性层和反铁磁性层的叠层，用于将传感电流提供给自由磁性层和用于使自由磁性层的磁化方向定向的一对绝缘偏压层; 以及在该自旋阀薄膜磁性元件的厚度方向上层叠的一对屏蔽层。薄膜磁头还具有形成在其中一个屏蔽层上的突起，以朝向自旋阀薄膜磁性元件侧突出，使得该对绝缘偏压层在轨道的方向上布置在突起的两侧宽度。

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