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1. 发明授权

US08048474B2 Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing 有权
标题翻译：通过低温处理制造含有碳电阻率开关作为存储元件的非易失性存储单元的方法
公开(公告)号：US08048474B2
公开(公告)日：2011-11-01
申请号：US12222341
申请日：2008-08-07
申请人： Tanmay Kumar , Er-Xuan Ping , Alper Ilkbahar
发明人： Tanmay Kumar , Er-Xuan Ping , Alper Ilkbahar
IPC分类号： B05D5/12 , H01L21/20
CPC分类号： H01L45/04 , G11C13/00 , H01L27/2409 , H01L45/1233 , H01L45/149 , H01L45/1608
摘要： A method of making a nonvolatile memory cell includes forming a steering element and forming a carbon resistivity switching material storage element by coating a carbon containing colloid.
摘要翻译：制造非易失性存储单元的方法包括：通过涂覆含碳胶体形成转向元件并形成碳电阻率切换材料储存元件。

2. 发明申请

US20100006812A1 CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：基于碳的电阻率切换材料及其形成方法
公开(公告)号：US20100006812A1
公开(公告)日：2010-01-14
申请号：US12499467
申请日：2009-07-08
申请人： Huiwen Xu , Xiying Chen , Roy E. Scheuerlein , Er-Xuan Ping , Tanmay Kumar , Alper Ilkbahar
发明人： Huiwen Xu , Xiying Chen , Roy E. Scheuerlein , Er-Xuan Ping , Tanmay Kumar , Alper Ilkbahar
IPC分类号： H01L29/02 , H01L21/00
CPC分类号： B82Y10/00 , B82Y30/00 , C23C16/26 , G11C13/0014 , G11C13/025 , G11C2213/19 , G11C2213/35 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/124 , H01L45/149 , H01L45/1616
摘要： Memory devices including a carbon-based resistivity-switchable material, and methods of forming such memory devices are provided, the methods including introducing a processing gas into a processing chamber, wherein the processing gas includes a hydrocarbon compound and a carrier gas, and generating a plasma of the processing gas to deposit a layer of the carbon-based switchable material on a substrate within the processing chamber. Numerous additional aspects are provided.
摘要翻译：提供了包括碳基电阻率可切换材料的存储器件以及形成这种存储器件的方法，所述方法包括将处理气体引入处理室，其中所述处理气体包括烃化合物和载气，并且产生处理气体的等离子体，以将一层碳基可切换材料沉积在处理室内的基板上。还提供了许多其他方面。

3. 发明申请

US20090258135A1 Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing 有权
标题翻译：通过低温处理制造含有碳电阻率开关作为存储元件的非易失性存储单元的方法
公开(公告)号：US20090258135A1
公开(公告)日：2009-10-15
申请号：US12222341
申请日：2008-08-07
申请人： Tanmay Kumar , Er-Xuan Ping , Alper Ilkbahar
发明人： Tanmay Kumar , Er-Xuan Ping , Alper Ilkbahar
IPC分类号： B05D5/12
CPC分类号： H01L45/04 , G11C13/00 , H01L27/2409 , H01L45/1233 , H01L45/149 , H01L45/1608
摘要： A method of making a nonvolatile memory cell includes forming a steering element and forming a carbon resistivity switching material storage element by coating a carbon containing colloid.
摘要翻译：制造非易失性存储单元的方法包括：通过涂覆含碳胶体形成转向元件并形成碳电阻率切换材料储存元件。

4. 发明申请

US20060067127A1 Method of programming a monolithic three-dimensional memory 审中-公开
标题翻译：编写单片三维存储器的方法
公开(公告)号：US20060067127A1
公开(公告)日：2006-03-30
申请号：US10955049
申请日：2004-09-30
申请人： Luca Fasoli , Roy Scheuerlein , Alper Ilkbahar , En-Hsing Chen , Tanmay Kumar
发明人： Luca Fasoli , Roy Scheuerlein , Alper Ilkbahar , En-Hsing Chen , Tanmay Kumar
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/12 , G11C16/16
摘要： A method of programming a monolithic three-dimensional (3-D) memory having a plurality of levels of memory cells above a silicon substrate is disclosed. The method includes initializing a program voltage and program time interval; selecting a memory cell to be programmed within the three-dimensional memory having the plurality of levels of memory cells; applying a pulse having the program voltage and the program time interval to the selected memory cell; performing a read after write operation with respect to the selected memory cell to determine a measured threshold voltage value; and comparing the measured threshold voltage value to a minimum program voltage. In response to the comparison between the measured threshold voltage value and the minimum program voltage, the method further includes selectively applying at least one subsequent program pulse to the selected memory cell.
摘要翻译：公开了一种在硅衬底上编程具有多层存储单元的单片三维（3-D）存储器的方法。该方法包括初始化程序电压和程序时间间隔; 选择要在具有多个级别的存储器单元的三维存储器内编程的存储器单元; 将具有编程电压和程序时间间隔的脉冲施加到所选存储单元; 在对所选择的存储单元进行写操作之后执行读取以确定测量的阈值电压值; 以及将所测量的阈值电压值与最小编程电压进行比较。响应于测量的阈值电压值和最小编程电压之间的比较，该方法还包括选择性地将至少一个后续编程脉冲施加到所选存储单元。

5. 发明授权

US08659028B2 Three-dimensional memory device incorporating segmented array line memory array 有权
公开(公告)号：US08659028B2
公开(公告)日：2014-02-25
申请号：US11764789
申请日：2007-06-18
申请人： Roy E. Scheuerlein , Alper Ilkbahar , Luca G. Fasoli
发明人： Roy E. Scheuerlein , Alper Ilkbahar , Luca G. Fasoli
IPC分类号： H01L27/10
CPC分类号： G11C7/18 , G11C16/0416 , G11C16/0466 , G11C17/12 , G11C17/18 , G11C2213/71 , G11C2213/77 , Y10S257/91
摘要： A three-dimensional (3D) high density memory array includes multiple layers of segmented bit lines (i.e., sense lines) with segment switch devices within the memory array that connect the segments to global bit lines. The segment switch devices reside on one or more layers of the integrated circuit, preferably residing on each bit line layer. The global bit lines reside preferably on one layer below the memory array, but may reside on more than one layer. The bit line segments preferably share vertical connections to an associated global bit line. In certain EEPROM embodiments, the array includes multiple layers of segmented bit lines with segment connection switches on multiple layers and shared vertical connections to a global bit line layer. Such memory arrays may be realized with much less write-disturb effects for half selected memory cells, and may be realized with a much smaller block of cells to be erased.

6. 发明授权

US07433233B2 NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same 有权
标题翻译： NAND存储器阵列结合未选择的存储单元中的沟道区域的电容升压及其操作方法
公开(公告)号：US07433233B2
公开(公告)日：2008-10-07
申请号：US11764793
申请日：2007-06-18
申请人： En-Hsing Chen , Andrew J. Walker , Roy E. Scheuerlein , Sucheta Nallamothu , Alper Ilkbahar , Luca G. Fasoli
发明人： En-Hsing Chen , Andrew J. Walker , Roy E. Scheuerlein , Sucheta Nallamothu , Alper Ilkbahar , Luca G. Fasoli
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/3418 , G11C11/5621 , G11C16/0483 , G11C16/10 , G11C16/3427 , H01L27/115 , H01L27/11568 , H01L27/1159
摘要： An exemplary NAND string memory array provides for capacitive boosting of a half-selected memory cell channel to reduce program disturb effects of the half selected cell. To reduce the effect of leakage current degradation of the boosted level, multiple programming pulses of a shorter duration are employed to limit the time period during which such leakage currents may degrade the voltage within the unselected NAND strings. In addition, multiple series select devices at one or both ends of each NAND string further ensure reduced leakage through such select devices, for both unselected and selected NAND strings. In certain exemplary embodiments, a memory array includes series-connected NAND strings of memory cell transistors having a charge storage dielectric, and includes more than one plane of memory cells formed above a substrate.
摘要翻译：示例性的NAND串存储器阵列提供半选择的存储器单元通道的电容性升压以减少半选择单元的程序干扰效应。为了减小升压电平的漏电流劣化的影响，采用较短持续时间的多个编程脉冲来限制这种漏电流可能降低未选择的NAND串中的电压的时间周期。此外，在每个NAND串的一端或两端的多个串联选择装置进一步确保了对于未选择的和选择的NAND串的这种选择装置的减少的泄漏。在某些示例性实施例中，存储器阵列包括具有电荷存储电介质的存储单元晶体管的串联连接的NAND串，并且包括形成在衬底上方的多于一个的存储单元平面。

7. 发明授权

US06940109B2 High density 3d rail stack arrays and method of making 有权
标题翻译：高密度三维轨道堆叠阵列及其制作方法
公开(公告)号：US06940109B2
公开(公告)日：2005-09-06
申请号：US10779760
申请日：2004-02-18
申请人： Kedar Patel , Alper Ilkbahar , Roy Scheuerlein , Andrew J. Walker
发明人： Kedar Patel , Alper Ilkbahar , Roy Scheuerlein , Andrew J. Walker
IPC分类号： H01L21/8239 , H01L27/088 , H01L27/092 , H01L27/105 , H01L29/76
CPC分类号： H01L27/088 , H01L27/092 , H01L27/105 , H01L27/1052
摘要： A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation.
摘要翻译：半导体器件包括两个晶体管，其中一个晶体管的栅电极和另一个晶体管的源极或漏极位于同一导轨中。单片三维阵列包含多个这样的装置。阵列的不同级别的晶体管优选地具有不同的取向。

8. 发明授权

US06528380B2 Electro static discharge protection n-well ballast resistor device 失效
标题翻译：静电放电保护n口镇流电阻器件
公开(公告)号：US06528380B2
公开(公告)日：2003-03-04
申请号：US09895509
申请日：2001-06-29
申请人： Bruce Woolery , Alper Ilkbahar
发明人： Bruce Woolery , Alper Ilkbahar
IPC分类号： H01L218222
CPC分类号： H01L27/0629 , H01L27/0288
摘要： An n-well resistor device and its method of fabrication. The n-well resistor device of the present invention comprises a first n-type region and a second n-type region formed in an n-type silicon region. A gate dielectric layer formed on said n-type silicon region. A polysilicon gate formed on said gate dielectric.
摘要翻译：一种n阱电阻器件及其制造方法。本发明的n阱电阻器件包括形成在n型硅区域中的第一n型区域和第二n型区域。形成在所述n型硅区上的栅介质层。形成在所述栅极电介质上的多晶硅栅极。

9. 发明授权

US06289447B1 Topology dependent compensation to improve performance of self-compensated components including processors based on physical relationship with other system components 有权
标题翻译：拓扑相关补偿，以提高自补偿组件的性能，包括基于与其他系统组件的物理关系的处理器
公开(公告)号：US06289447B1
公开(公告)日：2001-09-11
申请号：US09179492
申请日：1998-10-26
申请人： Alper Ilkbahar
发明人： Alper Ilkbahar
IPC分类号： G06F9445
CPC分类号： H03K17/164 , H03K19/0005 , H03K19/018585 , H03K19/1731
摘要： A method and apparatus for compensating system components based on system topology. The present invention provides a method and apparatus for performance optimization through topology dependent compensation. In one embodiment, one or more components of a computer system are coupled to a bus via self-compensated buffer(s). The self-compensated buffer(s) allow operating characteristics to be set via external signals such as voltage levels. System components have compensation units that receive external signals and configure the operating characteristics of the self-compensated buffer(s). In this manner a system designer may set operating characteristics for various system components based on the topology of the specific system rather than designing for a worst-case scenario.
摘要翻译：一种基于系统拓扑补偿系统组件的方法和装置。本发明提供一种通过拓扑依赖补偿进行性能优化的方法和装置。在一个实施例中，计算机系统的一个或多个组件经由自补偿缓冲器耦合到总线。自补偿缓冲器允许通过诸如电压电平的外部信号设置工作特性。系统组件具有接收外部信号并配置自补偿缓冲器的工作特性的补偿单元。以这种方式，系统设计者可以基于特定系统的拓扑而不是为最坏情况设计设计各种系统组件的操作特性。

10. 发明授权

US6043682A Predriver logic circuit 失效
标题翻译：前驱逻辑电路
公开(公告)号：US6043682A
公开(公告)日：2000-03-28
申请号：US997223
申请日：1997-12-23
申请人： Sanjay Dabral , Dilip K. Sampath , Alper Ilkbahar
发明人： Sanjay Dabral , Dilip K. Sampath , Alper Ilkbahar
IPC分类号： H03K19/003 , H03K19/0175 , H03K19/094
CPC分类号： H03K19/00361
摘要： A buffer for enabling a signal to be applied to a bus. The buffer includes a first transistor coupled to a bus and a voltage supply. The logic buffer includes a first logic circuit which has an input coupled to receive a data signal and adapted to charge a terminal of the transistor at a first rate in response to a transition in the data signal. A second logic circuit charges the terminal at a faster rate during an initial transition period, until a first preselected condition is met. The buffer also includes a third logic circuit to charge the terminal at a second faster rate during a final transition period, after a second preselected condition is met. A method for controlling a voltage level of a signal applied to a terminal of a transistor includes charging the terminal at a fast rate until a first preselected condition is met. The terminal is then charged at a slower rate, until a second preselected condition is met, at which time the terminal is charged at a second fast rate, which is also greater than the slower rate.
摘要翻译：用于使信号施加到总线的缓冲器。缓冲器包括耦合到总线的第一晶体管和电压源。逻辑缓冲器包括第一逻辑电路，其具有耦合以接收数据信号的输入，并且适于响应于数据信号中的转变以第一速率对晶体管的端子充电。第二逻辑电路在初始过渡期间以更快的速率对终端充电，直到满足第一预选条件。缓冲器还包括第三逻辑电路，以在满足第二预选条件之后，在最后的过渡期期间以更快的速率对终端充电。用于控制施加到晶体管的端子的信号的电压电平的方法包括以快速的速率对端子充电直到满足第一预选条件。然后以较慢的速率对终端进行充电，直到满足第二预选条件，此时终端以第二快速率充电，其也大于较慢速率。

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