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1. 发明授权

US4176325A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4176325A
公开(公告)日：1979-11-27
申请号：US843365
申请日：1977-10-19
申请人： Takashi Kajimura , Kazutoshi Saito , Noriyuki Shige , Michiharu Nakamura , Jun-ichi Umeda , Masayoshi Kobayashi
发明人： Takashi Kajimura , Kazutoshi Saito , Noriyuki Shige , Michiharu Nakamura , Jun-ichi Umeda , Masayoshi Kobayashi
IPC分类号： H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device capable of emitting highly collimated beams, especially of a narrow beam divergence, is disclosed. A striped hetero-junction is formed on a predetermined semiconductor substrate by a first semiconductor layer (refractive index: n.sub.1, band gap: Eg.sub.1, thickness: d), a second semiconductor layer (n.sub.2) and a third semiconductor layer (n.sub.3), and the hetero-junction is sandwiched between portions of a fourth semiconductor layer (n.sub.4, Eg.sub.4) into a buried structure. At this time, the various materials are selected to follow the relations of d.ltoreq..lambda. (where .lambda. denotes the oscillation wavelength of the semiconductor laser), n.sub.2, n.sub.3
摘要翻译：公开了能够发射高度准直的光束，特别是窄的光束发散的半导体激光器件。通过第一半导体层（折射率：n1，带隙：Eg1，厚度：d），第二半导体层（n2）和第三半导体层（n3）在预定的半导体衬底上形成条纹异质结，以及异质结被夹在第四半导体层（n4，Eg4）的一部分成埋入结构。此时，选择各种材料以遵循dλ/λ（其中λ表示半导体激光器的振荡波长），n2，n3

2. 发明授权

US4337443A Semiconductor laser device with facet passivation film 失效
标题翻译：半导体激光器件具有刻面钝化膜
公开(公告)号：US4337443A
公开(公告)日：1982-06-29
申请号：US124266
申请日：1980-02-25
申请人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
发明人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of (.lambda./4).multidot.m where .lambda. represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.
摘要翻译：公开了一种半导体激光元件，其包括沉积在激光元件的至少光学输出面上的非晶材料的膜，并且包含硅和氢作为不可缺少的成分。优选在（λ/ 4）×m附近选择非晶膜的厚度，其中λ表示非晶膜中的激光的波长，m表示奇整数。可以将非透明绝缘材料的膜沉积在非晶膜上，从而构成复合膜。利用所公开的半导体激光元件的结构，可以将激光元件的阈值电流的增加抑制到最小，同时可以提高最大光输出功率。

3. 发明授权

US4288757A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4288757A
公开(公告)日：1981-09-08
申请号：US56360
申请日：1979-07-10
申请人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
发明人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/323 , H01S3/19
CPC分类号： H01L33/0025 , H01S5/22 , H01S5/32308 , H01S5/32325
摘要： In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.
摘要翻译：在某些应用中，期望具有比常规半导体激光器可能的波长波长更短的半导体激光器件。为了实现这一点，形成具有双异质结构的半导体激光器件，其包括由GaAsP晶体构成的半导体衬底，形成在衬底上并由一种导电类型的GaAlAsP晶体构成的第一覆层，活性层形成在第一包层上并由GaInAsP晶体构成;以及第二覆层，形成在有源层上并由与第一覆层相反的导电类型的GaAlAsP晶体构成。设置在有源层两侧的覆层具有比活性层更低的折射率和更大的带隙。

4. 发明授权

US4404678A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4404678A
公开(公告)日：1983-09-13
申请号：US365606
申请日：1982-04-05
申请人： Kunio Aiki , Michiharu Nakamura , Jun-ichi Umeda
发明人： Kunio Aiki , Michiharu Nakamura , Jun-ichi Umeda
IPC分类号： H01L33/00 , H01S5/10 , H01S5/223 , H01S3/19
CPC分类号： H01S5/10 , H01L33/0025 , H01S5/2232 , H01S5/0655 , H01S5/1064 , H01S5/2234 , H01S5/3203 , H01S5/3211
摘要： A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides light-output versus current characteristics free of either kinks or any anomalies.
摘要翻译：本发明的半导体激光器件通过在带槽或投影的衬底上生长平面双异质（DH）层，具有沿接合面的内置的被动引导机构。它在最低横向模式下稳定工作，并提供光输出与电流特性，无扭曲或任何异常现象。

5. 发明授权

US4326176A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4326176A
公开(公告)日：1982-04-20
申请号：US786758
申请日：1977-04-12
申请人： Kunio Aiki , Michiharu Nakamura , Jun-ichi Umeda
发明人： Kunio Aiki , Michiharu Nakamura , Jun-ichi Umeda
IPC分类号： H01L33/00 , H01S5/10 , H01S5/223 , H01S3/19
CPC分类号： H01S5/10 , H01L33/0025 , H01S5/2232 , H01S5/0655 , H01S5/1064 , H01S5/2234 , H01S5/3203 , H01S5/3211
摘要： A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides light-output versus current characteristics fee of either kinks or any anomalies.
摘要翻译：本发明的半导体激光器件通过在带槽或投影的衬底上生长平面双异质（DH）层，具有沿接合面的内置的被动引导机构。它在最低横向模式下稳定运行，并提供扭曲或任何异常现象的光输出与电流特性费用。

6. 发明授权

US4025939A Semiconductor laser device and a method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US4025939A
公开(公告)日：1977-05-24
申请号：US606053
申请日：1975-08-20
申请人： Kunio Aiki , Hitachi, Ltd. , Michiharu Nakamura , Jun-Ichi Umeda
发明人： Kunio Aiki , Hitachi, Ltd. , Michiharu Nakamura , Jun-Ichi Umeda
IPC分类号： H01S5/00 , H01S5/12 , H01L33/00 , H01L29/161
CPC分类号： H01S5/12 , H01S5/1215
摘要： A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, an optical confinement region comprising a laser active region consisting of GaAs disposed on the n-type GaAlAs layer, a first p-type GaAlAs region whose aluminum content is less than that of the n-type GaAlAs layer, disposed on said laser active region and a second p-type GaAlAs region whose aluminum content is less than that of the first p-type GaAlAs region, the surface of which opposite that disposed on said first p-type GaAlAs region is a periodically corrugated surface, a p-type GaAlAs layer whose aluminum content is more than that of said first p-type GaAlAs region, disposed on the periodically corrugated surface of the second p-type GaAlAs region, a p-type GaAs layer disposed on said p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and which has a very low threshold value for laser oscillation and which is fabricated with a very high yield rate.
摘要翻译：一种半导体激光器件包括：n型GaAs层，n型GaAlAs层，设置在n型GaAs层上;光限制区，包括由设置在n型GaAlAs层上的GaAs构成的激光有源区;第一其铝含量小于位于所述激光有源区上的n型GaAlAs层的p型GaAlAs区域和铝含量小于第一p型GaAlAs区域的第二p型GaAlAs区域，其表面设置在所述第一p型GaAlAs区域上的表面是周期性波纹状表面，其铝含量大于所述第一p型GaAlAs区域的铝含量的p型GaAlAs层，其设置在第二p型GaAlAs区域，设置在所述p型GaAlAs层上的p型GaAs层和分别设置在n型和p型GaAs层上的电极，并且具有非常低的激光阈值振荡，是织物以非常高的产量率。

7. 发明授权

US4257011A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4257011A
公开(公告)日：1981-03-17
申请号：US929013
申请日：1978-07-28
申请人： Michiharu Nakamura , Shigeo Yamashita , Takao Kuroda , Jun-ichi Umeda
发明人： Michiharu Nakamura , Shigeo Yamashita , Takao Kuroda , Jun-ichi Umeda
IPC分类号： H01S5/12 , H01S5/223 , H01S3/19
CPC分类号： H01S5/12 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser device has stabilized longitudinal and transverse modes without excess optical noise for a modulated signal generated by mode interaction. The fundamental construction of the semiconductor laser device comprises a structure wherein a first semiconductor layer is sandwiched between second and third semiconductor layers which have a greater band gap and lower index of refraction than the first semiconductor layer. That region of at least one of the second and third semiconductor layers which is remote from the first semiconductor layer corresponds substantially to a radiation region and serves as a light non-absorptive region in the shape of a stripe. A semiconductor layer has portions lying on both sides of the semiconductor layer remote from the first semiconductor layer and has an effective complex refractive-index for laser light discontinuous at both ends of the semiconductor layer remote from the first semiconductor layer. Periodic corrugations which intersect orthogonally to the lengthwise direction of the stripe-shaped light non-absorptive region are formed in at least one interface of the semiconductor layers in a manner to include at least a region corresponding to the light non-absorptive region.
摘要翻译：半导体激光器件对于通过模式相互作用产生的调制信号具有稳定的纵向和横向模式而没有过多的光学噪声。半导体激光器件的基本结构包括其中第一半导体层夹在具有比第一半导体层更大的带隙和较低的折射率的第二和第三半导体层之间的结构。远离第一半导体层的第二和第三半导体层中的至少一个的区域基本上对应于辐射区域，并且用作条纹形状的光非吸收区域。半导体层具有位于远离第一半导体层的半导体层的两侧的部分，并且对于远离第一半导体层的半导体层的两端处的不连续的激光具有有效的复合折射率。以至少包括对应于光非吸收区域的区域的方式，在半导体层的至少一个界面中形成与条形光非吸收区域的长度方向垂直相交的周期波纹。

8. 发明授权

US4740976A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4740976A
公开(公告)日：1988-04-26
申请号：US592956
申请日：1984-03-23
申请人： Takashi Kajimura , Shinichi Nakatuka , Naoki Chinone , Michiharu Nakamura , Yuichi Ono
发明人： Takashi Kajimura , Shinichi Nakatuka , Naoki Chinone , Michiharu Nakamura , Yuichi Ono
IPC分类号： H01S5/223 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method.
摘要翻译：半导体激光器件包括由半导体衬底上依次层叠的第一覆盖层，有源层和第二覆盖层构成的半导体层堆叠，以及层叠在第二覆盖层上的光吸收层和电流阻挡层包层所述半导体组件包括从所述半导体层堆叠的表面延伸到所述第二包层的表面或内部的条形槽，以及具有比所述有源层大的禁带宽度和与所述有源层相同的导电类型的另一半导体层通过化学气相沉积法嵌入凹槽中的第二覆层。

9. 发明授权

US4602371A High output semiconductor laser device utilizing a mesa-stripe optical confinement region 失效
标题翻译：利用台面条状光限制区域的高输出半导体激光器件
公开(公告)号：US4602371A
公开(公告)日：1986-07-22
申请号：US571578
申请日：1984-01-17
申请人： Toshihiro Kawano , Tsukuru Ohtoshi , Naoki Chinone , Takashi Kajimura , Michiharu Nakamura
发明人： Toshihiro Kawano , Tsukuru Ohtoshi , Naoki Chinone , Takashi Kajimura , Michiharu Nakamura
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2275 , H01S5/3213
摘要： A semiconductor laser device is provided with an optical confinement region constituted by first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively. The first and fourth semiconductor layers are smaller in refractive index than the second and third semiconductor layers, and the third semiconductor layer is larger in refractive index than the second semiconductor layer. On the other hand, the second and fourth semiconductor layers are larger in forbidden bandwidth than the third semiconductor layer. At least the first and fourth semiconductor layers are opposite in conductivity type to each other. In addition to this, the optical confinement region is formed into a mesa-stripe, and both side walls of this mesa-stripe which are substantially parallel to the traveling direction of a laser beam are embedded with a fifth semiconductor layer. Also, the width of the second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within the optical confinement region is made larger than that of the third semiconductor layer. Accordingly, by virtue of this structure, a large output is ensured by this semiconductor laser device.
摘要翻译：半导体激光装置设置有由第一，第二，第三和第四半导体层构成的光限制区域，该第一，第二，第三和第四半导体层依次相互接触地设置在预定半导体衬底的上部。第一和第四半导体层的折射率小于第二和第三半导体层，并且第三半导体层的折射率比第二半导体层大。另一方面，第二和第四半导体层的禁带宽度大于第三半导体层。至少第一和第四半导体层的导电类型彼此相反。除此之外，光限制区域形成为台面条状，并且基本上平行于激光束的行进方向的该台面条的两个侧壁都嵌有第五半导体层。此外，第二半导体层在与激光束的行进方向垂直的部分的宽度以及与光限制区域内的结的平行方向的宽度大于第三半导体层的宽度。因此，通过这种结构，通过该半导体激光器件确保了大的输出。

10. 发明授权

US4599729A Semiconductor laser device having facets provided with dielectric layers 失效
标题翻译：半导体激光器件具有设有电介质层的刻面
公开(公告)号：US4599729A
公开(公告)日：1986-07-08
申请号：US578530
申请日：1984-02-09
申请人： Yoshimitsu Sasaki , Takashi Kajimura , Naoki Chinone , Michiharu Nakamura
发明人： Yoshimitsu Sasaki , Takashi Kajimura , Naoki Chinone , Michiharu Nakamura
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028
摘要： In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer and a second dielectric layer on at least one of the two facets of a resonator and in which the refractive index of the first dielectric layer is lower than that of the second dielectric layer, the improvement wherein the second dielectric layer consists of an amorphous material containing silicon and hydrogen at its essential constituent elements.
摘要翻译：在这种类型的半导体激光器件中，其包括在谐振器的两个面的至少一个面上的第一电介质层和第二电介质层的至少一个层叠体，并且其中第一电介质层的折射率低于第一电介质层的折射率的第二介电层的改进，其中第二介电层由其基本组成元素上含有硅和氢的非晶材料组成。

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