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1. 发明授权

US4599729A Semiconductor laser device having facets provided with dielectric layers 失效
标题翻译：半导体激光器件具有设有电介质层的刻面
公开(公告)号：US4599729A
公开(公告)日：1986-07-08
申请号：US578530
申请日：1984-02-09
申请人： Yoshimitsu Sasaki , Takashi Kajimura , Naoki Chinone , Michiharu Nakamura
发明人： Yoshimitsu Sasaki , Takashi Kajimura , Naoki Chinone , Michiharu Nakamura
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028
摘要： In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer and a second dielectric layer on at least one of the two facets of a resonator and in which the refractive index of the first dielectric layer is lower than that of the second dielectric layer, the improvement wherein the second dielectric layer consists of an amorphous material containing silicon and hydrogen at its essential constituent elements.
摘要翻译：在这种类型的半导体激光器件中，其包括在谐振器的两个面的至少一个面上的第一电介质层和第二电介质层的至少一个层叠体，并且其中第一电介质层的折射率低于第一电介质层的折射率的第二介电层的改进，其中第二介电层由其基本组成元素上含有硅和氢的非晶材料组成。

2. 发明授权

US4602371A High output semiconductor laser device utilizing a mesa-stripe optical confinement region 失效
标题翻译：利用台面条状光限制区域的高输出半导体激光器件
公开(公告)号：US4602371A
公开(公告)日：1986-07-22
申请号：US571578
申请日：1984-01-17
申请人： Toshihiro Kawano , Tsukuru Ohtoshi , Naoki Chinone , Takashi Kajimura , Michiharu Nakamura
发明人： Toshihiro Kawano , Tsukuru Ohtoshi , Naoki Chinone , Takashi Kajimura , Michiharu Nakamura
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2275 , H01S5/3213
摘要： A semiconductor laser device is provided with an optical confinement region constituted by first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively. The first and fourth semiconductor layers are smaller in refractive index than the second and third semiconductor layers, and the third semiconductor layer is larger in refractive index than the second semiconductor layer. On the other hand, the second and fourth semiconductor layers are larger in forbidden bandwidth than the third semiconductor layer. At least the first and fourth semiconductor layers are opposite in conductivity type to each other. In addition to this, the optical confinement region is formed into a mesa-stripe, and both side walls of this mesa-stripe which are substantially parallel to the traveling direction of a laser beam are embedded with a fifth semiconductor layer. Also, the width of the second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within the optical confinement region is made larger than that of the third semiconductor layer. Accordingly, by virtue of this structure, a large output is ensured by this semiconductor laser device.
摘要翻译：半导体激光装置设置有由第一，第二，第三和第四半导体层构成的光限制区域，该第一，第二，第三和第四半导体层依次相互接触地设置在预定半导体衬底的上部。第一和第四半导体层的折射率小于第二和第三半导体层，并且第三半导体层的折射率比第二半导体层大。另一方面，第二和第四半导体层的禁带宽度大于第三半导体层。至少第一和第四半导体层的导电类型彼此相反。除此之外，光限制区域形成为台面条状，并且基本上平行于激光束的行进方向的该台面条的两个侧壁都嵌有第五半导体层。此外，第二半导体层在与激光束的行进方向垂直的部分的宽度以及与光限制区域内的结的平行方向的宽度大于第三半导体层的宽度。因此，通过这种结构，通过该半导体激光器件确保了大的输出。

3. 发明授权

US4740976A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4740976A
公开(公告)日：1988-04-26
申请号：US592956
申请日：1984-03-23
申请人： Takashi Kajimura , Shinichi Nakatuka , Naoki Chinone , Michiharu Nakamura , Yuichi Ono
发明人： Takashi Kajimura , Shinichi Nakatuka , Naoki Chinone , Michiharu Nakamura , Yuichi Ono
IPC分类号： H01S5/223 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method.
摘要翻译：半导体激光器件包括由半导体衬底上依次层叠的第一覆盖层，有源层和第二覆盖层构成的半导体层堆叠，以及层叠在第二覆盖层上的光吸收层和电流阻挡层包层所述半导体组件包括从所述半导体层堆叠的表面延伸到所述第二包层的表面或内部的条形槽，以及具有比所述有源层大的禁带宽度和与所述有源层相同的导电类型的另一半导体层通过化学气相沉积法嵌入凹槽中的第二覆层。

4. 发明授权

US4780879A Semiconductor laser device having little astigmatism 失效
标题翻译：具有很少散光的半导体激光器件
公开(公告)号：US4780879A
公开(公告)日：1988-10-25
申请号：US16410
申请日：1987-02-19
申请人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
发明人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/10 , H01S3/19
CPC分类号： H01S5/1082 , H01S5/0267 , H01S5/1064
摘要： A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.
摘要翻译：一种半导体激光器件，其具有限定在一对端面之间的条状有源区域，所述端面中的至少一个在平行于有源区域的平面中具有弯曲的横截面，其曲率半径为10至300μm m，有源区域的条纹具有允许单横模和多纵模的宽度。从该激光器发射的激光束可以具有很少的散光和小的斑点尺寸。

5. 发明授权

US4881235A Semiconductor laser having a multiple quantum well structure doped with impurities 失效
标题翻译：具有掺杂有杂质的多量子阱结构的半导体激光器
公开(公告)号：US4881235A
公开(公告)日：1989-11-14
申请号：US41410
申请日：1987-04-23
申请人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura , Tsukuru Ohtoshi
发明人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura , Tsukuru Ohtoshi
IPC分类号： H01S5/227 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/227 , H01S5/34 , H01S5/2275 , H01S5/309 , H01S5/3407 , Y10S372/704
摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.
摘要翻译：在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长，在阻挡层中的密度比井层中的密度高。此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

6. 发明授权

US4821275A Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US4821275A
公开(公告)日：1989-04-11
申请号：US140755
申请日：1988-01-04
申请人： Shinichi Nakatsuka , Naoki Chinone , Kazuhisa Uomi , Yuichi Ono , Takashi Kajimura
发明人： Shinichi Nakatsuka , Naoki Chinone , Kazuhisa Uomi , Yuichi Ono , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/16 , H01S5/223 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2232 , H01S5/2234
摘要： A stripe groove is formed on a semiconductor substrate and buried by lamination of multiple semiconductor layers, and a channel being lower than the substrate surface is formed outside the groove near at least one mirror edge, such that a laser diode with decreased astigmatism can be produced.
摘要翻译：在半导体基板上形成条纹槽，通过层叠多个半导体层而被掩埋，并且在至少一个反射镜边缘附近形成低于基板表面的沟道，从而可以产生具有减小的散光的激光二极管。

7. 发明授权

US4630279A Buried heterojunction laser 失效
标题翻译：埋入异质结激光
公开(公告)号：US4630279A
公开(公告)日：1986-12-16
申请号：US462908
申请日：1983-02-01
申请人： Takashi Kajimura , Takao Kuroda , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki
发明人： Takashi Kajimura , Takao Kuroda , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki
IPC分类号： H01S5/00 , H01S5/042 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： Disclosed herein is a semiconductor laser device including at least an optical confinement region having at least first, second and third semiconductor layers disposed on a semiconductor substrate, wherein the first and third semiconductor layers have refractive indices greater than the refractive index of the second semiconductor layer but have forebidden band gap smaller than that of the second semiconductor layer and the conductivity types of the first and third semiconductor layers are opposite to each other; the second semiconductor layer has a smooth change of its thickness in two directions parallel to a junction surface of the optical confinement region; and a difference exists in the refractive indices of the first and third semiconductor layers.
摘要翻译：本文公开了一种半导体激光器件，其至少包括具有至少设置在半导体衬底上的第一，第二和第三半导体层的光限制区域，其中第一和第三半导体层的折射率大于第二半导体层的折射率但是具有比第二半导体层小的带隙，并且第一和第三半导体层的导电类型彼此相反; 所述第二半导体层在与所述光限制区域的接合面平行的两个方向上具有平滑的厚度变化; 并且第一和第三半导体层的折射率存在差异。

8. 发明授权

US4811354A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4811354A
公开(公告)日：1989-03-07
申请号：US895843
申请日：1986-08-12
申请人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
发明人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
IPC分类号： H01S5/10 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/4031 , H01S5/10 , H01S5/1032 , H01S5/3432
摘要： A phased array semiconductor laser has two or more luminous stripes. The number, width or center to center spacing of stripes is made different between the center region and neighborhood of facets of the laser so that the laser may oscillate stably in the fundamental supermode with an optical output of 100 mW or more.
摘要翻译：相控阵半导体激光器具有两个或更多个发光条纹。条纹的数量，宽度或中心到中心的间隔在激光器的小面的中心区域和邻近区域之间是不同的，使得激光器可以以100mW或更大的光学输出在基本超声波中稳定地振荡。

9. 发明授权

US4563764A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4563764A
公开(公告)日：1986-01-07
申请号：US531710
申请日：1983-09-13
申请人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Hirobumi Ouchi , Tsukuru Ohtoshi
发明人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Hirobumi Ouchi , Tsukuru Ohtoshi
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： Disclosed is a semiconductor laser device having at least an optical confinement region which includes a first semiconductor layer, and second and third semiconductor layers holding the first semiconductor layer therebetween and having a greater band gap and a lower refractive index than those of the first semiconductor layer, the second and third semiconductor layers having conductivity types opposite to each other; characterized in that the relationship between a donor density (N.sub.D .times.10.sup.17 cm.sup.-3) of the n-conductivity type semiconductor layer in the second and third semiconductor layers and a proportion (.GAMMA..sub.n %) of an optical output existing in the n-conductivity type semiconductor layer relative to a total optical output of the laser is set at N.sub.D .times..GAMMA..sub.n .gtoreq.500. Noise characteristics are sharply improved.
摘要翻译：公开了一种半导体激光器件，其至少具有包含第一半导体层的光限制区域，以及将第一半导体层保持在其间并且具有比第一半导体层的更大的带隙和更低的折射率的第二和第三半导体层所述第二和第三半导体层具有彼此相反的导电类型; 其特征在于，第二和第三半导体层中的n导电型半导体层的供体密度（ND×107cm-3）与存在于n导电型半导体中的光输出的比例（GAMMA n％）之间的关系相对于激光的总光输出的层设置为NDx GAMMA n> = 500。噪声特性大幅提高。

10. 发明授权

US5136601A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5136601A
公开(公告)日：1992-08-04
申请号：US379672
申请日：1989-07-13
申请人： Takashi Kajimura , Naoki Chinone , Yuichi Ono , Shinichi Nakatsuka , Kazuhisa Uomi , Toshihiro Kawano , Tsukuru Ohtoshi , Yasutoshi Kashiwada
发明人： Takashi Kajimura , Naoki Chinone , Yuichi Ono , Shinichi Nakatsuka , Kazuhisa Uomi , Toshihiro Kawano , Tsukuru Ohtoshi , Yasutoshi Kashiwada
IPC分类号： H01S5/10 , H01S5/227
CPC分类号： H01S5/10 , H01S5/227 , H01S5/1064 , H01S5/2275
摘要： A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and portions close to facets, in order to reduce optical feedback induced noise and astigmatism, and to facilitate the manufacture thereof.
摘要翻译：一种具有条状激光区域的半导体激光器，其中激光区域的结构（例如横向模式控制结构的光引导机构）在激光区域的中心部分和靠近刻面的部分之间按顺序以减少光学反馈引起的噪声和散光，并促进其制造。

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