专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4288757A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4288757A
公开(公告)日：1981-09-08
申请号：US56360
申请日：1979-07-10
申请人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
发明人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/323 , H01S3/19
CPC分类号： H01L33/0025 , H01S5/22 , H01S5/32308 , H01S5/32325
摘要： In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.
摘要翻译：在某些应用中，期望具有比常规半导体激光器可能的波长波长更短的半导体激光器件。为了实现这一点，形成具有双异质结构的半导体激光器件，其包括由GaAsP晶体构成的半导体衬底，形成在衬底上并由一种导电类型的GaAlAsP晶体构成的第一覆层，活性层形成在第一包层上并由GaInAsP晶体构成;以及第二覆层，形成在有源层上并由与第一覆层相反的导电类型的GaAlAsP晶体构成。设置在有源层两侧的覆层具有比活性层更低的折射率和更大的带隙。

2. 发明授权

US4025939A Semiconductor laser device and a method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US4025939A
公开(公告)日：1977-05-24
申请号：US606053
申请日：1975-08-20
申请人： Kunio Aiki , Hitachi, Ltd. , Michiharu Nakamura , Jun-Ichi Umeda
发明人： Kunio Aiki , Hitachi, Ltd. , Michiharu Nakamura , Jun-Ichi Umeda
IPC分类号： H01S5/00 , H01S5/12 , H01L33/00 , H01L29/161
CPC分类号： H01S5/12 , H01S5/1215
摘要： A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, an optical confinement region comprising a laser active region consisting of GaAs disposed on the n-type GaAlAs layer, a first p-type GaAlAs region whose aluminum content is less than that of the n-type GaAlAs layer, disposed on said laser active region and a second p-type GaAlAs region whose aluminum content is less than that of the first p-type GaAlAs region, the surface of which opposite that disposed on said first p-type GaAlAs region is a periodically corrugated surface, a p-type GaAlAs layer whose aluminum content is more than that of said first p-type GaAlAs region, disposed on the periodically corrugated surface of the second p-type GaAlAs region, a p-type GaAs layer disposed on said p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and which has a very low threshold value for laser oscillation and which is fabricated with a very high yield rate.
摘要翻译：一种半导体激光器件包括：n型GaAs层，n型GaAlAs层，设置在n型GaAs层上;光限制区，包括由设置在n型GaAlAs层上的GaAs构成的激光有源区;第一其铝含量小于位于所述激光有源区上的n型GaAlAs层的p型GaAlAs区域和铝含量小于第一p型GaAlAs区域的第二p型GaAlAs区域，其表面设置在所述第一p型GaAlAs区域上的表面是周期性波纹状表面，其铝含量大于所述第一p型GaAlAs区域的铝含量的p型GaAlAs层，其设置在第二p型GaAlAs区域，设置在所述p型GaAlAs层上的p型GaAs层和分别设置在n型和p型GaAs层上的电极，并且具有非常低的激光阈值振荡，是织物以非常高的产量率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式