专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5107119A Method of evaluating characteristics of superconductors and process and apparatus for forming superconductor film by using the method 失效
标题翻译：超导体的特性评价方法及使用该方法形成超导薄膜的方法和装置
公开(公告)号：US5107119A
公开(公告)日：1992-04-21
申请号：US683421
申请日：1991-04-10
申请人： Takafumi Kimura , Hiroshi Nakao , Hideki Yamawaki , Masaru Ihara , Keigo Nagasaka
发明人： Takafumi Kimura , Hiroshi Nakao , Hideki Yamawaki , Masaru Ihara , Keigo Nagasaka
IPC分类号： C01B13/14 , C01G1/00 , C23C14/54 , C23C16/52 , G01N21/84 , H01B12/06 , H01B13/00 , H01L39/00 , H01L39/24
CPC分类号： G01N21/8422 , C23C14/54 , C23C16/52 , G01N21/3563 , G01N21/3581 , Y10S505/842
摘要： A method of evaluating the characteristics of superconductors, comprising: irradiating light to a superconductor held at a predetermined temperature; detecting light transmitted through the superconductor and composing a spectrum of the transmitted light; and using the obtained spectrum, calculating a ratio of the number of electrons contributing to a normal conduction to the number of electrons contributing to a superconduction in the superconductor, the ratio being effective at said predetermined temperature. A process and an apparatus for forming superconductor films by using the method are also disclosed.
摘要翻译：一种评价超导体特性的方法，包括：将光照射到保持在预定温度的超导体; 检测透过超导体的光并构成透射光的光谱; 并且使用所获得的光谱，计算有助于正常导通的电子数与在超导体中有助于超导的电子数的比率，该比在所述预定温度下有效。还公开了通过使用该方法形成超导体膜的方法和装置。

2. 发明授权

US5037774A Process for the production of semiconductor devices utilizing multi-step deposition and recrystallization of amorphous silicon 失效
标题翻译：利用多步沉积和非晶硅再结晶生产半导体器件的方法
公开(公告)号：US5037774A
公开(公告)日：1991-08-06
申请号：US73839
申请日：1987-07-15
申请人： Hideki Yamawaki , Yoshihiro Arimoto , Shigeo Kodama , Takafumi Kimura , Masaru Ihara
发明人： Hideki Yamawaki , Yoshihiro Arimoto , Shigeo Kodama , Takafumi Kimura , Masaru Ihara
IPC分类号： H01L27/12 , H01L21/20 , H01L21/205 , H01L21/324 , H01L21/86
CPC分类号： H01L21/324 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262 , Y10S148/017 , Y10S148/025 , Y10S148/15
摘要： Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.
摘要翻译：通过使用绝缘体上硅（SOI）技术制造半导体器件的工艺。 SOI结构的Si层包括Si的界面层和在其上形成的Si的缓冲层，由此可以有效地防止在Si层中形成堆垛层错。用钼酸盐溶液预处理下层绝缘材料，并在Si的缓冲层和上覆的有源Si层之间插入缓慢生长的单晶Si的附加层也有效地抑制堆垛层错。可以以良好的产量生产具有高质量的半导体器件。

3. 发明授权

US4931425A Process for chemical vapor deposition of superconductive oxide 失效
标题翻译：超导氧化物的化学气相沉积工艺
公开(公告)号：US4931425A
公开(公告)日：1990-06-05
申请号：US249653
申请日：1988-09-27
申请人： Takafumi Kimura , Hideki Yamawaki , Kazuto Ikeda , Masaru Ihara
发明人： Takafumi Kimura , Hideki Yamawaki , Kazuto Ikeda , Masaru Ihara
IPC分类号： C01G1/00 , C01G3/00 , C04B41/87 , C23C16/40 , H01B12/06 , H01B13/00 , H01L39/24
CPC分类号： C23C16/408 , H01L39/2438 , Y10S505/73
摘要： A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.

4. 发明授权

US5183510A Apparatus and process for chemical vapor deposition 失效
标题翻译：化学气相沉积的装置和方法
公开(公告)号：US5183510A
公开(公告)日：1993-02-02
申请号：US443317
申请日：1989-11-30
申请人： Takafumi Kimura
发明人： Takafumi Kimura
IPC分类号： H01L21/365 , C23C16/40 , C23C16/448
CPC分类号： C23C16/408 , C23C16/4481
摘要： An apparatus for a chemical vapor deposition of a compound film on a substrate, comprising: a plurality of gas-generating chambers each containing an evaporating boat for a solid source containing a component element of a compound film to be formed on a substrate, provided with a heating element for heating and evaporating the solid source, having an inlet for a carrier gas and a gas outlet, and arranged such that effective gas-generating portions thereof are thermally isolated from each other; a gas-mixing chamber for mixing gases from said gas-generating chambers, provided with a heater element for heating a gas passing therethrough and having inlets for gases flowing from said gas-generating chambers and an outlet for a gas mixture; and a film-growing chamber containing a substrate on which a compound film is formed by a gas phase reaction, provided with a heating element for heating the substrate, and having an inlet for a gas mixture flowing from said gas-mixing chamber and an exhaust gas outlet. Also disclosed is a chemical vapor deposition process using the disclosed apparatus.

5. 发明授权

US09236226B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09236226B2
公开(公告)日：2016-01-12
申请号：US13428512
申请日：2012-03-23
申请人： Jun Yamawaku , Takafumi Kimura , Chishio Koshimizu
发明人： Jun Yamawaku , Takafumi Kimura , Chishio Koshimizu
IPC分类号： H01L21/00 , H01J37/32
CPC分类号： H01J37/32091 , H01J37/32669
摘要： In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle θ1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°
摘要翻译：在等离子体处理装置10中，在基座12和与基座12相对的上部电极13之间形成有处理空间S.等离子体处理装置10包括设在上侧电极13的与处理空间S.磁场产生单元包括具有一对环形磁体排27a和27b的磁力线生成单元27。环形磁体排27a和27b设置在上部电极13的与处理空间S相对的一侧，并且从顶部观察时同心地布置。在磁力线产生单元27中，由环状磁体排27a和27b的磁体的轴线形成的角度θ1设定在约0°<1at; 1＆amp; nlE; 180°的范围内。

6. 发明申请

US20120241092A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120241092A1
公开(公告)日：2012-09-27
申请号：US13428512
申请日：2012-03-23
申请人： Jun Yamawaku , Takafumi Kimura , Chishio Koshimizu
发明人： Jun Yamawaku , Takafumi Kimura , Chishio Koshimizu
IPC分类号： H05H1/24 , B44C1/22
CPC分类号： H01J37/32091 , H01J37/32669
摘要： In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle θ1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°
摘要翻译：在等离子体处理装置10中，在基座12和与基座12相对的上部电极13之间形成有处理空间S.等离子体处理装置10包括设在上侧电极13的与处理空间S.磁场产生单元包括具有一对环形磁体排27a和27b的磁力线生成单元27。环形磁体排27a和27b设置在上部电极13的与处理空间S相对的一侧，并且从顶部观察时同心地布置。在磁力线产生单元27中，由环状磁体排27a和27b的磁体的轴线形成的角度θ1设定在约0°<1at; 1＆amp; nlE; 180°的范围内。

7. 发明授权

US07508306B2 Handheld RFID reader with display 失效
标题翻译：带显示屏的手持式RFID阅读器
公开(公告)号：US07508306B2
公开(公告)日：2009-03-24
申请号：US11589927
申请日：2006-10-31
申请人： Hiroshi Fujii , Takafumi Kimura
发明人： Hiroshi Fujii , Takafumi Kimura
IPC分类号： G08B13/14
CPC分类号： G01S5/12 , G01S13/74 , G01S13/867
摘要： A handy terminal allowing an object of interest such as a cargo to be efficiently searched utilizing an RFID tag is provided. A detection unit detects the distance and direction of an RFID tag attached to an object of search from a point for observing the distance and direction. A reading unit reads information on the external shape of the object of search written in a memory portion of the RFID tag. An image processing unit displays a three-dimensional graphic of the disposition of the RFID tag based on the distance and direction detected by the detection unit and compositely displaying a three-dimensional appearance image of the object of search estimated from the external shape information of the object of search read by the reading unit in the position where the three-dimensional graphic of the RFID tag is displayed.
摘要翻译：提供了一种方便的终端，其允许利用RFID标签有效地搜索诸如货物的感兴趣对象。检测单元从用于观察距离和方向的点检测附接到搜索对象的RFID标签的距离和方向。读取单元读取写入RFID标签的存储器部分中的搜索对象的外部形状的信息。图像处理单元基于由检测单元检测到的距离和方向显示RFID标签的配置的三维图形，并且从根据该检测单元的外部形状信息估计的复合显示搜索对象的三维外观图像读取单元在显示RFID标签的三维图形的位置读取的搜索对象。

8. 发明授权

US6025222A Vapor phase growth of a dielectric film and a fabrication process of a semiconductor device having such a dielectric film 失效
标题翻译：电介质膜的气相生长和具有这种电介质膜的半导体器件的制造工艺
公开(公告)号：US6025222A
公开(公告)日：2000-02-15
申请号：US387297
申请日：1995-02-10
申请人： Takafumi Kimura , Hideaki Yamauchi , Masaaki Nakabayashi
发明人： Takafumi Kimura , Hideaki Yamauchi , Masaaki Nakabayashi
IPC分类号： C01F11/00 , C23C16/40 , H01L21/205 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/365
CPC分类号： C23C16/409 , H01L21/31691
摘要： A method for growing a dielectric film containing Sr on a substrate includes the steps of: dissolving a Sr compound containing Sr((CH.sub.3).sub.5 C.sub.5).sub.2 into an organic solvent or mixing Sr(thd).sub.2 and an amine compound to form a source material; vaporizing the source material to produce a gaseous source material; and decomposing the gaseous source material, obtained in the step of vaporization, in the vicinity of a surface of a substrate held in a reaction chamber, to cause a deposition of a dielectric film containing Sr upon the surface of the substrate.
摘要翻译：一种在基板上生长含有Sr的电介质膜的方法包括以下步骤：将含有Sr（（CH3）5C5）2的Sr化合物溶解在有机溶剂中或混合Sr（thd）2和胺化合物以形成源材料 ; 蒸发源材料以产生气态源材料; 在蒸发步骤中得到的气态原料分解在保持在反应室中的基板的表面附近，使得在基板的表面上沉积包含Sr的电介质膜。

9. 发明申请

US20120263839A1 METHOD FOR MANUFACTURING LOW-PHOSPHORUS WHEY 有权
标题翻译：制造低磷白蛋白的方法
公开(公告)号：US20120263839A1
公开(公告)日：2012-10-18
申请号：US13497646
申请日：2010-09-24
申请人： Nobuo Seki , Masatoshi Ohnishi , Kie Kinoshita , Yoshitaka Tamura , Hitoshi Saito , Hiroshi Ochi , Takafumi Kimura
发明人： Nobuo Seki , Masatoshi Ohnishi , Kie Kinoshita , Yoshitaka Tamura , Hitoshi Saito , Hiroshi Ochi , Takafumi Kimura
IPC分类号： A23C21/00
CPC分类号： A23C9/1425 , A23C9/146 , A23J3/08 , A23L33/40 , A23V2002/00 , A23V2250/54252 , A23V2300/30 , A23V2300/34
摘要： A method of manufacturing a low-phosphorus whey, the method including subjecting a raw whey liquid to a demineralization treatment using a nanofiltration method to obtain a low-chloride whey liquid in which the chloride content has been reduced to not more than 30 mmol per 100 g of solids, and passing the low-chloride whey liquid through an ion exchange resin to obtain an ion-exchanged whey liquid having a reduced phosphorus content, wherein the ion exchange resin is composed of an anion exchange resin, and at least an anion exchange resin in chloride form is used as the anion exchange resin. The method of manufacturing a low-phosphorus whey can reduce the phosphorus content within the whey while suppressing reduction in the calcium and magnesium content.
摘要翻译：一种低磷乳清的制造方法，其特征在于，使用纳滤法对原料乳清液进行脱盐处理，得到氯化物含量降低至不足30mmol / L以下的低氯化物乳清液 g的固体，并使低氯化物乳清液通过离子交换树脂，得到具有降低的磷含量的离子交换乳清液，其中所述离子交换树脂由阴离子交换树脂构成，并且至少阴离子交换使用氯化物形式的树脂作为阴离子交换树脂。制备低磷乳清的方法可以降低乳清中的磷含量，同时抑制钙和镁含量的降低。

10. 发明授权

US6024503A Photograph developing apparatus 失效
标题翻译：照相显影装置
公开(公告)号：US6024503A
公开(公告)日：2000-02-15
申请号：US159508
申请日：1998-09-24
申请人： Tsukasa Nakano , Tomoya Tanaka , Takafumi Kimura , Yoshifumi Nakamura , Junichi Miyai
发明人： Tsukasa Nakano , Tomoya Tanaka , Takafumi Kimura , Yoshifumi Nakamura , Junichi Miyai
IPC分类号： G03D3/00 , G03D3/02 , G03D3/06 , G03D13/04
CPC分类号： G03D3/06 , G03D3/065
摘要： A photograph developing apparatus includes a main processing tank and a sub-tank which is connected to the main processing tank. The sub-tank is provided with a filter, a sensor, and the like in order to filter processing solution and feed the filtered processing solution back to the main processing tank. The sub-tank has a lid for covering the top of the sub-tank. The lid has an evaporation prevention block which is extended to a point below the surface of the processing solution. Cavity portions are formed in the evaporation prevention block at least at positions corresponding to the filter and the sensor. Alternatively, evaporation of the processing solution is suppressed through employment of an evaporation prevention block which floats on the surface of the processing solution. In this case as well, cavity portions are formed in the block at least at positions corresponding to the filter and the sensor.
摘要翻译：照相显影装置包括连接到主处理槽的主处理槽和副罐。副罐设置有过滤器，传感器等，以过滤处理溶液并将过滤的处理溶液反馈回主处理槽。副坦克具有用于覆盖副罐的顶部的盖子。盖子具有一个延伸到处理溶液表面下方的蒸发防止块。至少在与过滤器和传感器对应的位置处，在防蒸发块中形成腔部。或者，通过使用漂浮在处理溶液表面上的蒸发防止块来抑制处理溶液的蒸发。在这种情况下，至少在与过滤器和传感器对应的位置处，在块体中形成空腔部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式