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1. 发明授权

US5037774A Process for the production of semiconductor devices utilizing multi-step deposition and recrystallization of amorphous silicon 失效
标题翻译：利用多步沉积和非晶硅再结晶生产半导体器件的方法
公开(公告)号：US5037774A
公开(公告)日：1991-08-06
申请号：US73839
申请日：1987-07-15
申请人： Hideki Yamawaki , Yoshihiro Arimoto , Shigeo Kodama , Takafumi Kimura , Masaru Ihara
发明人： Hideki Yamawaki , Yoshihiro Arimoto , Shigeo Kodama , Takafumi Kimura , Masaru Ihara
IPC分类号： H01L27/12 , H01L21/20 , H01L21/205 , H01L21/324 , H01L21/86
CPC分类号： H01L21/324 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262 , Y10S148/017 , Y10S148/025 , Y10S148/15
摘要： Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.
摘要翻译：通过使用绝缘体上硅（SOI）技术制造半导体器件的工艺。 SOI结构的Si层包括Si的界面层和在其上形成的Si的缓冲层，由此可以有效地防止在Si层中形成堆垛层错。用钼酸盐溶液预处理下层绝缘材料，并在Si的缓冲层和上覆的有源Si层之间插入缓慢生长的单晶Si的附加层也有效地抑制堆垛层错。可以以良好的产量生产具有高质量的半导体器件。

2. 发明授权

US5107119A Method of evaluating characteristics of superconductors and process and apparatus for forming superconductor film by using the method 失效
标题翻译：超导体的特性评价方法及使用该方法形成超导薄膜的方法和装置
公开(公告)号：US5107119A
公开(公告)日：1992-04-21
申请号：US683421
申请日：1991-04-10
申请人： Takafumi Kimura , Hiroshi Nakao , Hideki Yamawaki , Masaru Ihara , Keigo Nagasaka
发明人： Takafumi Kimura , Hiroshi Nakao , Hideki Yamawaki , Masaru Ihara , Keigo Nagasaka
IPC分类号： C01B13/14 , C01G1/00 , C23C14/54 , C23C16/52 , G01N21/84 , H01B12/06 , H01B13/00 , H01L39/00 , H01L39/24
CPC分类号： G01N21/8422 , C23C14/54 , C23C16/52 , G01N21/3563 , G01N21/3581 , Y10S505/842
摘要： A method of evaluating the characteristics of superconductors, comprising: irradiating light to a superconductor held at a predetermined temperature; detecting light transmitted through the superconductor and composing a spectrum of the transmitted light; and using the obtained spectrum, calculating a ratio of the number of electrons contributing to a normal conduction to the number of electrons contributing to a superconduction in the superconductor, the ratio being effective at said predetermined temperature. A process and an apparatus for forming superconductor films by using the method are also disclosed.
摘要翻译：一种评价超导体特性的方法，包括：将光照射到保持在预定温度的超导体; 检测透过超导体的光并构成透射光的光谱; 并且使用所获得的光谱，计算有助于正常导通的电子数与在超导体中有助于超导的电子数的比率，该比在所述预定温度下有效。还公开了通过使用该方法形成超导体膜的方法和装置。

3. 发明授权

US4931425A Process for chemical vapor deposition of superconductive oxide 失效
标题翻译：超导氧化物的化学气相沉积工艺
公开(公告)号：US4931425A
公开(公告)日：1990-06-05
申请号：US249653
申请日：1988-09-27
申请人： Takafumi Kimura , Hideki Yamawaki , Kazuto Ikeda , Masaru Ihara
发明人： Takafumi Kimura , Hideki Yamawaki , Kazuto Ikeda , Masaru Ihara
IPC分类号： C01G1/00 , C01G3/00 , C04B41/87 , C23C16/40 , H01B12/06 , H01B13/00 , H01L39/24
CPC分类号： C23C16/408 , H01L39/2438 , Y10S505/73
摘要： A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.

4. 发明授权

US07635395B2 Solid material gasification method 失效
标题翻译：固体气化方法
公开(公告)号：US07635395B2
公开(公告)日：2009-12-22
申请号：US11378290
申请日：2006-03-20
申请人： Hiroyuki Hyodo , Hideki Yamawaki , Kenji Maruyama , Masaharu Hida
发明人： Hiroyuki Hyodo , Hideki Yamawaki , Kenji Maruyama , Masaharu Hida
IPC分类号： B01D7/00
CPC分类号： C23C16/4483 , C23C16/4485
摘要： Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein a second solid material is separated by removing the solvent used to prepare the gasification solution from that solution, and a solid sublimation step wherein the second solid material is gasified by sublimation.
摘要翻译：固体气化方法包括溶液制备步骤，其中将第一固体材料溶解在溶剂中以制备气化溶液;溶剂去除步骤，其中通过从溶液中除去用于制备气化溶液的溶剂来分离第二固体物质，和固体升华步骤，其中第二固体材料通过升华气化。

5. 发明申请

US20060160370A1 Solid material gasification method, thin film formation process and apparatuses 失效
标题翻译：固体气化方法，薄膜形成工艺及装置
公开(公告)号：US20060160370A1
公开(公告)日：2006-07-20
申请号：US11378290
申请日：2006-03-20
申请人： Hiroyuki Hyodo , Hideki Yamawaki , Kenji Maruyama , Masaharu Hida
发明人： Hiroyuki Hyodo , Hideki Yamawaki , Kenji Maruyama , Masaharu Hida
IPC分类号： H01L21/31
CPC分类号： C23C16/4483 , C23C16/4485
摘要： Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein a second solid material is separated by removing the solvent used to prepare the gasification solution from that solution, and a solid sublimation step wherein the second solid material is gasified by sublimation.
摘要翻译：固体气化方法包括溶液制备步骤，其中将第一固体材料溶解在溶剂中以制备气化溶液;溶剂去除步骤，其中通过从溶液中除去用于制备气化溶液的溶剂来分离第二固体物质，和固体升华步骤，其中第二固体材料通过升华气化。

6. 发明授权

US07883961B2 Manufacturing method for ferroelectric memory device 有权
标题翻译：铁电存储器件的制造方法
公开(公告)号：US07883961B2
公开(公告)日：2011-02-08
申请号：US11998176
申请日：2007-11-28
申请人： Hiroaki Tamura , Masaki Kurasawa , Hideki Yamawaki
发明人： Hiroaki Tamura , Masaki Kurasawa , Hideki Yamawaki
IPC分类号： H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A manufacturing method for a ferroelectric memory device including: forming a lower electrode; forming an electrode oxide film composed of an oxide of a constituent material of the lower electrode; forming a first ferroelectric layer on the lower electrode by reaction between organometallic source material gas and oxygen gas; forming a second ferroelectric layer on the first ferroelectric layer by reaction between organometallic source material gas and oxygen gas; and forming an upper electrode on the second ferroelectric layer. In the method, the oxygen gas in the forming of the first ferroelectric layer is in an amount less than the amount of oxygen necessary for reaction of the organometallic source material gas. In the method, the oxygen gas in the forming of the second ferroelectric layer is in an amount greater than the amount of oxygen necessary for reaction of the organometallic source material gas.
摘要翻译：一种铁电存储器件的制造方法，包括：形成下电极; 形成由下电极的构成材料的氧化物构成的电极氧化膜; 通过有机金属源材料气体和氧气之间的反应在下电极上形成第一铁电层; 通过有机金属源材料气体和氧气之间的反应在第一铁电体层上形成第二铁电层; 以及在所述第二铁电层上形成上电极。在该方法中，形成第一铁电体层中的氧气的量小于有机金属源材料气体反应所需的氧气量。在该方法中，形成第二铁电体层的氧气的量比有机金属源材料气体反应所需的氧气的量大。

7. 发明申请

US20050105038A1 Thin film multilayer body, electronic device and actuator using the thin film multilayer body, and method of manufacturing the actuator 审中-公开
标题翻译：薄膜多层体，使用薄膜多层体的电子装置和致动器以及制造致动器的方法
公开(公告)号：US20050105038A1
公开(公告)日：2005-05-19
申请号：US11017820
申请日：2004-12-22
申请人： Masao Kondo , Hideki Yamawaki
发明人： Masao Kondo , Hideki Yamawaki
IPC分类号： C30B29/26 , C23C16/40 , G02F1/1339 , H01L21/8246 , H01L27/105 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/317 , H01L41/39
CPC分类号： H01L41/0815 , H01L41/1875 , H01L41/29 , H01L41/319
摘要： A thin film multilayer body is disclosed that includes a single crystal substrate of silicon or gallium arsenide; an intermediate layer of magnesia spinel formed on the single crystal substrate by epitaxial growth; and a conductive layer of a platinum-group element formed on the intermediate layer by epitaxial growth. An oxide layer is to be epitaxially grown on the conductive layer, the oxide layer having a crystalline structure having a simple perovskite lattice.
摘要翻译：公开了一种薄膜多层体，其包括硅或砷化镓的单晶衬底; 通过外延生长在单晶衬底上形成的氧化镁尖晶石的中间层; 以及通过外延生长在中间层上形成的铂族元素的导电层。在导电层上外延生长氧化物层，氧化物层具有具有简单钙钛矿晶格的晶体结构。

8. 发明授权

US06852551B2 Method of forming a ferroelectric film and fabrication process of a semiconductor device having a ferroelectric film 失效
标题翻译：形成铁电体膜的方法和具有铁电体膜的半导体装置的制造方法
公开(公告)号：US06852551B2
公开(公告)日：2005-02-08
申请号：US10767178
申请日：2004-01-30
申请人： Hideki Yamawaki
发明人： Hideki Yamawaki
IPC分类号： C23C16/40 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L21/00 , H01L21/8242 , B05C11/00
CPC分类号： H01L21/02271 , C23C16/409 , H01L21/02197 , H01L21/02312 , H01L21/31691 , H01L28/55 , H01L28/60 , H01L28/65
摘要： A method of forming a ferroelectric film includes the steps of forming a layer by a material that takes a metal state in a reducing ambient and an oxide state in an oxidizing ambient, and depositing a ferroelectric film on a surface of the layer by supplying gaseous sources of the ferroelectric film and an oxidizing gas and causing a decomposition of the gaseous sources at the surface of said layer, wherein the step of depositing the ferroelectric film is started with a preparation step in which the state of the surface of said layer is controlled substantially to a critical point in which the layer changes from the metal state to the oxide state and from the oxide state to the metal state.
摘要翻译：形成铁电体膜的方法包括以下步骤：通过在还原环境中具有金属状态并且在氧化环境中具有氧化态的材料形成层，并且通过提供气体源将铁电膜沉积在该层的表面上的铁电体膜和氧化气体，并且在所述层的表面引起气态源的分解，其中沉积强电介质膜的步骤开始于制备步骤，其中所述层的表面的状态基本上被控制到其中层从金属状态转变为氧化态，从氧化物状态转变为金属状态的临界点。

9. 发明授权

US07045473B2 Solid material gasification method, thin film formation process and apparatus 失效
标题翻译：固体原料气化法，薄膜形成工艺及装置
公开(公告)号：US07045473B2
公开(公告)日：2006-05-16
申请号：US10662474
申请日：2003-09-16
申请人： Hiroyuki Hyodo , Hideki Yamawaki , Kenji Maruyama , Masaharu Hida
发明人： Hiroyuki Hyodo , Hideki Yamawaki , Kenji Maruyama , Masaharu Hida
IPC分类号： H01L21/324 , C23C16/00
CPC分类号： C23C16/4483 , C23C16/4485
摘要： Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein a second solid material is separated by removing the solvent used to prepare the gasification solution from that solution, and a solid sublimation step wherein the second solid material is gasified by sublimation.
摘要翻译：固体气化方法包括溶液制备步骤，其中将第一固体材料溶解在溶剂中以制备气化溶液;溶剂去除步骤，其中通过从溶液中除去用于制备气化溶液的溶剂来分离第二固体物质，和固体升华步骤，其中第二固体材料通过升华气化。

10. 发明授权

US06790677B2 Method of forming a ferroelectric film and fabrication process of a semiconductor device having a ferroelectric film 失效
标题翻译：形成铁电体膜的方法和具有铁电体膜的半导体装置的制造方法
公开(公告)号：US06790677B2
公开(公告)日：2004-09-14
申请号：US10338647
申请日：2003-01-09
申请人： Hideki Yamawaki
发明人： Hideki Yamawaki
IPC分类号： H01L2100
CPC分类号： H01L21/02271 , C23C16/409 , H01L21/02197 , H01L21/02312 , H01L21/31691 , H01L28/55 , H01L28/60 , H01L28/65
摘要： A method of forming a ferroelectric film includes the steps of forming a layer by a material that takes a metal state in a reducing ambient and an oxide state in an oxidizing ambient, and depositing a ferroelectric film on a surface of the layer by supplying gaseous sources of the ferroelectric film and an oxidizing gas and causing a decomposition of the gaseous sources at the surface of said layer, wherein the step of depositing the ferroelectric film is started with a preparation step in which the state of the surface of said layer is controlled substantially to a critical point in which the layer changes from the metal state to the oxide state and from the oxide state to the metal state.
摘要翻译：形成铁电体膜的方法包括以下步骤：通过在还原环境中具有金属状态并且在氧化环境中具有氧化态的材料形成层，并且通过提供气体源将铁电膜沉积在该层的表面上的铁电体膜和氧化气体，并且在所述层的表面引起气态源的分解，其中沉积强电介质膜的步骤开始于制备步骤，其中所述层的表面的状态基本上被控制到其中层从金属状态转变为氧化态，从氧化物状态转变为金属状态的临界点。

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