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1. 发明授权

US4933728A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US4933728A
公开(公告)日：1990-06-12
申请号：US309929
申请日：1989-02-13
申请人： Tadashi Fukuzawa , Eizaburo Yamada , Kenji Hiruma , Hiroyoshi Matsumura
发明人： Tadashi Fukuzawa , Eizaburo Yamada , Kenji Hiruma , Hiroyoshi Matsumura
IPC分类号： H01S5/00 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/34
摘要： A semiconductor optical device in which a hetero-structure is constructed by sandwiching a semiconductor layer including a thin film made of a semiconductor or insulator between semiconductors having a larger band gap than that of the thin film so that the electron-hole pairs generated through the thin film may recombine by the tunnel effect to emit an optical beam. The optical device is equipped with electrodes for controlling the probability of said recombination.
摘要翻译：一种半导体光学器件，其中通过将包括由半导体或绝缘体制成的薄膜的半导体层夹在具有比薄膜的带隙更大的带隙的半导体之间构成异构体，使得通过薄膜可以通过隧道效应重新组合以发射光束。光学装置配备有用于控制所述重组的概率的电极。

2. 发明授权

US4847573A Optical modulator 失效
标题翻译：光调制器
公开(公告)号：US4847573A
公开(公告)日：1989-07-11
申请号：US860412
申请日：1986-05-07
申请人： Tadashi Fukuzawa , Eizaburo Yamada , Kenji Hiruma , Hiroyoshi Matsumura
发明人： Tadashi Fukuzawa , Eizaburo Yamada , Kenji Hiruma , Hiroyoshi Matsumura
IPC分类号： G02F1/015 , G02F1/017
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01708 , G02F2001/0157
摘要： An optical modulator which utilizes the Stark effect according to which the absorption spectra change if an electric field is applied to the excitons. A thin film of a suitable thickness composed of a semiconductor and an insulator or composed of either one of them, is formed between a group of electrons and a group of positive holes that constitute excitons, so that the excitons are stabilized. The optical modulator performs the modulation at high speeds maintaining a high efficiency.
摘要翻译：利用斯塔克效应的光学调制器，如果对激子施加电场，则吸收光谱发生变化。在一组电子和一组构成激子的正空穴之间形成由半导体和绝缘体组成的合适厚度的薄膜，或者由它们中的任意一个构成的薄膜，使得激子稳定。光调制器以高速执行调制，保持高效率。

3. 发明授权

US4720836A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US4720836A
公开(公告)日：1988-01-19
申请号：US767631
申请日：1985-08-20
申请人： Tadashi Fukuzawa , Hiroyoshi Matsumura , Shinji Tsuji , Hitoshi Nakamura , Kenji Hiruma
发明人： Tadashi Fukuzawa , Hiroyoshi Matsumura , Shinji Tsuji , Hitoshi Nakamura , Kenji Hiruma
IPC分类号： H01S5/00 , H01S5/12 , H01S5/34 , H01S3/08 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/34
摘要： The present invention relates to a semiconductor laser which oscillates in a single longitudinal mode and with a low threshold current and which exhibits a good mode stability against reflected light, and provides a structure of a distributed feedback semiconductor laser with modulation for a gain. The structure is such that gain producing regions are periodically arranged and that a substance transparent to laser radiation is buried between the regions. A layer including the gain regions is formed of a superlattice layer, and an impurity is diffused or implanted into periodic positions of the layer, whereby the transparent regions and the gain regions with little lattice damages can be readily formed.
摘要翻译：本发明涉及一种半导体激光器，其以单一纵向模式和低阈值电流振荡，并且对反射光表现出良好的模式稳定性，并且提供具有用于增益的调制的分布式反馈半导体激光器的结构。该结构使得增益产生区域周期性地布置，并且对于激光辐射透明的物质被埋在区域之间。包含增益区域的层由超晶格层形成，杂质扩散或注入层的周期性位置，由此可以容易地形成几乎没有晶格损伤的透明区域和增益区域。

4. 发明授权

US4861130A Optical modulating device utilizing polariton substance 失效
标题翻译：利用极化物质的光调制装置
公开(公告)号：US4861130A
公开(公告)日：1989-08-29
申请号：US112494
申请日：1987-10-26
申请人： Toshio Katsuyama , Hiroyoshi Matsumura , Hiroaki Inoue , Tadashi Fukuzawa , Naoki Chinone
发明人： Toshio Katsuyama , Hiroyoshi Matsumura , Hiroaki Inoue , Tadashi Fukuzawa , Naoki Chinone
IPC分类号： G02F1/017 , G02F1/025 , G02F1/015
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/025
摘要： An optical device utilizes a polariton substance and utilizes the absorption wavelength band of excitonic polaritons. Further, an external stimulus such as electric field, magnetic field, stress, current or electromagnetic wave (light) is continuously or intermittently given to the polariton substance, thereby to modulate light which enters the optical device. Thus, a modulating operation of ultra-high speed is possible.
摘要翻译：光学装置利用极化子物质并利用激子离子的吸收波长带。此外，电场，磁场，应力，电流或电磁波（光）等外部刺激被连续或间歇地给予极化子物质，从而调制进入光学器件的光。因此，超高速的调制动作成为可能。

5. 发明授权

US4766092A Method of growing heteroepitaxial InP on Si using Sn substrate implantation 失效
标题翻译：使用Sn衬底植入在Si上生长异质外延InP的方法
公开(公告)号：US4766092A
公开(公告)日：1988-08-23
申请号：US937019
申请日：1986-12-02
申请人： Takao Kuroda , Kenji Hiruma , Hiroyoshi Matsumura
发明人： Takao Kuroda , Kenji Hiruma , Hiroyoshi Matsumura
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/265 , H01S5/00
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02658 , H01S2301/173 , H01S2304/04 , H01S5/021 , H01S5/0422 , H01S5/305 , H01S5/3054 , Y10S148/072 , Y10S148/097 , Y10S148/119 , Y10S438/933 , Y10S438/938
摘要： When a semiconductor device is produced by growing epitaxially a compound semiconductor layer on a Si or Ge substrate, lattice matching between the substrate crystal and the compound semiconductor layer to be formed on the substrate can be improved by ion-implanting an ion species element, which increases the lattice constant of Si or Ge as the substrate, into the Si or Ge substrate in order to increase its lattice constant. In comparison with conventional semiconductor devices using Si or Ge into which ion implantation is not made, the semiconductor device produced by the method described above can improve remarkably its characteristics. In the case of a semiconductor laser device, for example, its threshold value drops drastically and its service life can be prolonged remarkably.
摘要翻译：当通过在Si或Ge衬底上外延生长化合物半导体层来制造半导体器件时，可以通过离子注入离子种类元素来改善衬底晶体和待形成在衬底上的化合物半导体层之间的晶格匹配，将作为衬底的Si或Ge的晶格常数增加到Si或Ge衬底中，以增加其晶格常数。与使用不进行离子注入的Si或Ge的常规半导体器件相比，通过上述方法制造的半导体器件可以显着改善其特性。在半导体激光器件的情况下，例如，其阈值急剧下降，使用寿命显着延长。

6. 发明授权

US4737015A Optical waveguide having a silicon oxi-nitride layer 失效
标题翻译：具有硅氧化物层的光波导
公开(公告)号：US4737015A
公开(公告)日：1988-04-12
申请号：US674770
申请日：1984-11-26
申请人： Koji Ishida , Hiroyoshi Matsumura , Kenji Hiruma , Kazuyuki Nagatsuma , Akihito Hongo
发明人： Koji Ishida , Hiroyoshi Matsumura , Kenji Hiruma , Kazuyuki Nagatsuma , Akihito Hongo
IPC分类号： G02B6/00 , G02B6/02 , G02B6/122 , G02B6/13 , G02B6/132
CPC分类号： G02B6/132 , G02B6/122
摘要： An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N.sub.2 and O.sub.2 gases.
摘要翻译：一种光波导，包括形成在基板上的层，其具有氧化硅和氮化硅的混合组成，并且具有范围在氧化硅和氮化硅的折射率之间的任意值。所述混合组合物的层可以形成在基板上，以通过使用Si靶的溅射方法和控制由N 2和O 2气体的混合物组成的溅射气体的组成来容易地制造本发明的光波导。

7. 发明申请

US20130184445A1 METHOD FOR OBSERVING PROTEIN CRYSTAL 有权
标题翻译：观察蛋白水晶的方法
公开(公告)号：US20130184445A1
公开(公告)日：2013-07-18
申请号：US13825280
申请日：2011-09-20
申请人： Norihiko Nishizawa , Hiroyoshi Matsumura , Yuusuke Mori , Shutaro Ishida , Kazuyoshi Itoh , Shigeru Sugiyama , Hiroaki Adachi , Tsuyoshi Inoue , Kazufumi Takano , Murakami Satoshi
发明人： Norihiko Nishizawa , Hiroyoshi Matsumura , Yuusuke Mori , Shutaro Ishida , Kazuyoshi Itoh , Shigeru Sugiyama , Hiroaki Adachi , Tsuyoshi Inoue , Kazufumi Takano , Murakami Satoshi
IPC分类号： G01B9/02 , C07K1/30
CPC分类号： G01B9/02091 , C07K1/306 , G01N21/4795 , G01N2021/1787
摘要： Provided are a method for observing protein crystal, wherein the growth process of the protein crystals is nondestructively and three-dimensionally monitored on a real-time basis and the growth of the crystals is controlled at a high accuracy to thereby enable the formation of single crystals having good qualities, which comprises observing the protein crystals, said protein crystals having been produced by a crystallization method using a gel, by an OCT measurement using light emitted from an ultrawideband light source;a method for observing protein crystals wherein the ultrawideband light source is an ultrawideband supercontinuum light source; a method for observing protein crystals wherein the center wavelength of the light emitted from the ultrawideband supercontinuum light source is a 0.8 μm band; and a method for observing protein crystals wherein the monitoring of the protein crystals is a monitoring by an in situ measurement.
摘要翻译：提供了一种用于观察蛋白质晶体的方法，其中蛋白质晶体的生长过程以实时的方式非破坏性和三维地监测，并且以高精度控制晶体的生长，从而能够形成单晶具有良好的质量，其包括通过使用从超宽带光源发射的光的OCT测量观察蛋白质晶体，所述蛋白质晶体是通过使用凝胶的结晶方法产生的; 一种观察蛋白质晶体的方法，其中超宽带光源是超宽带超连续光源; 观察蛋白质晶体的方法，其中从超宽带超连续光源发射的光的中心波长为0.8μm波段; 以及观察蛋白质晶体的方法，其中蛋白质晶体的监测是通过原位测量的监测。

8. 发明授权

US07603008B2 Optical fiber coupling part and manufacturing method thereof 有权
标题翻译：光纤耦合部件及其制造方法
公开(公告)号：US07603008B2
公开(公告)日：2009-10-13
申请号：US10569279
申请日：2005-02-01
申请人： Hiroyoshi Matsumura , Taro Suzuki , Toru Achiwa
发明人： Hiroyoshi Matsumura , Taro Suzuki , Toru Achiwa
IPC分类号： G02B6/32
CPC分类号： G02B6/4206 , G02B3/0087 , G02B6/2551 , G02B6/30
摘要： An optical fiber coupling part that reduces the difficulty in adjusting cores, minimizes coupling loss, and prevents optical characteristics from deteriorating. An optical fiber is fused to one end of a GRIN lens which includes a quartz glass containing one or more refractive index regulating substances selected from Sb2O3, Ta2O5, TiO2 or ZrO2. Optical characteristics are not deteriorated because an adhesive is not used, and self-alignment effects facilitate adjustment of the cores of the GRIN lens and the optical fiber. Furthemore, coupling loss can be minimized by setting a refractive index distribution constant g of the GRIN lens within an appropriate range.
摘要翻译：一种光纤耦合部件，其减小了对芯的调节困难，使耦合损耗最小化，防止光学特性恶化。将光纤熔合到GRIN透镜的一端，其包括含有选自Sb 2 O 3，Ta 2 O 5，TiO 2或ZrO 2中的一种或多种折射率调节物质的石英玻璃。由于不使用粘合剂，光学特性不会劣化，自对准效果有利于GRIN透镜和光纤的芯的调节。通过将GRIN透镜的折射率分布常数g设定在适当的范围内，可以减少耦合损耗。

9. 发明授权

US07343064B2 Optical switch and optical add/drop multiplexer 失效
标题翻译：光开关和光分插复用器
公开(公告)号：US07343064B2
公开(公告)日：2008-03-11
申请号：US11541783
申请日：2006-10-02
申请人： Etsuo Koyama , Hiroyoshi Matsumura
发明人： Etsuo Koyama , Hiroyoshi Matsumura
IPC分类号： G02B6/34 , G02B6/35 , G02F1/13
CPC分类号： G02F1/133553 , G02F1/216 , G02F1/2955 , G02F2201/307 , G02F2203/055 , G02F2203/585
摘要： To provide a wavelength-selection optical switch able to select a light with a certain wavelength and an optical add/drop multiplexer using the same. An optical switch comprising: a silicon substrate; a glass substrate arranged to face a surface of the silicon substrate and having a transparent electrode layer in its opposing surface; a light diffraction reflection layer aligned on a surface of the silicon substrate; a liquid crystal layer aligned between the light diffraction reflection layer and the transparent electrode layer; a silicon substrate electrical terminal extracted from a rear surface of the silicon substrate; and a means for applying voltage between the transparent electrode layer and the silicon substrate electrical terminal; wherein selection of wavelength of light diffracted and reflected by the light diffraction reflection layer is possible by controlling the refraction index of the liquid crystal layer through the voltage. A beam diameter of a wavelength multiplexed light signal is widened by a collimator lens, the wavelength multiplexed light signal with widened beam diameter is directed to the optical switch, a light signal which has wavelength selected through the applied voltage on the optical switch is only diffracted and reflected by the optical switch.
摘要翻译：提供能够选择具有一定波长的光的波长选择光学开关和使用其的光学分插复用器。一种光开关，包括：硅衬底; 玻璃基板，其布置成面对硅基板的表面并且在其相对表面中具有透明电极层; 在硅衬底的表面上对准的光衍射反射层; 在所述光衍射反射层和所述透明电极层之间排列的液晶层; 从硅衬底的后表面提取的硅衬底电端子; 以及用于在所述透明电极层和所述硅衬底电端子之间施加电压的装置; 其中通过控制液晶层的折射率通过该电压，可以选择由光衍射反射层衍射和反射的光的波长。波长复用光信号的光束直径被准直透镜加宽，光束直径变宽的波长复用光信号被引导到光开关，通过光开关上的施加电压选择的波长的光信号仅被衍射并由光开关反射。

10. 发明授权

US4838633A Semiconductor device with high speed signal transmission arrangement utilizing light 失效
标题翻译：具有利用光的高速信号传输布置的半导体器件
公开(公告)号：US4838633A
公开(公告)日：1989-06-13
申请号：US827611
申请日：1986-02-10
申请人： Toshio Katsuyama , Hiroyoshi Matsumura
发明人： Toshio Katsuyama , Hiroyoshi Matsumura
IPC分类号： H01L27/15 , G02B6/122 , G02B6/43 , H01L31/12 , H01L31/167
CPC分类号： G02B6/43 , H01L31/12 , H01L31/125 , H01L31/167 , H04B10/801
摘要： In a semiconductor device wherein a signal transmission in a semiconductor integrated electronic circuit is carried out partly or entirely by means of a light, the signal transmission on the light is carried out with multi-wavelength, waveguides or a photoelectric converter and an electronic integrated device are provided on a circuit board having an optical waveguide, thus providing a high performance and practical technique.
摘要翻译：在半导体集成电子电路中的信号传输部分或全部通过光进行的半导体器件中，光的信号传输是用多波长，波导或光电转换器和电子集成器件设置在具有光波导的电路板上，从而提供高性能和实用的技术。

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