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1. 发明授权

US4720836A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US4720836A
公开(公告)日：1988-01-19
申请号：US767631
申请日：1985-08-20
申请人： Tadashi Fukuzawa , Hiroyoshi Matsumura , Shinji Tsuji , Hitoshi Nakamura , Kenji Hiruma
发明人： Tadashi Fukuzawa , Hiroyoshi Matsumura , Shinji Tsuji , Hitoshi Nakamura , Kenji Hiruma
IPC分类号： H01S5/00 , H01S5/12 , H01S5/34 , H01S3/08 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/34
摘要： The present invention relates to a semiconductor laser which oscillates in a single longitudinal mode and with a low threshold current and which exhibits a good mode stability against reflected light, and provides a structure of a distributed feedback semiconductor laser with modulation for a gain. The structure is such that gain producing regions are periodically arranged and that a substance transparent to laser radiation is buried between the regions. A layer including the gain regions is formed of a superlattice layer, and an impurity is diffused or implanted into periodic positions of the layer, whereby the transparent regions and the gain regions with little lattice damages can be readily formed.
摘要翻译：本发明涉及一种半导体激光器，其以单一纵向模式和低阈值电流振荡，并且对反射光表现出良好的模式稳定性，并且提供具有用于增益的调制的分布式反馈半导体激光器的结构。该结构使得增益产生区域周期性地布置，并且对于激光辐射透明的物质被埋在区域之间。包含增益区域的层由超晶格层形成，杂质扩散或注入层的周期性位置，由此可以容易地形成几乎没有晶格损伤的透明区域和增益区域。

2. 发明授权

US4775980A Distributed-feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US4775980A
公开(公告)日：1988-10-04
申请号：US759136
申请日：1985-07-26
申请人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao , Hitoshi Nakamura , Akio Oishi , Kenji Hiruma , Tadashi Fukuzawa , Hiroyoshi Matumura
发明人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao , Hitoshi Nakamura , Akio Oishi , Kenji Hiruma , Tadashi Fukuzawa , Hiroyoshi Matumura
IPC分类号： H01S5/10 , H01S5/12 , H01S5/183 , H01S3/08 , H01S3/19
CPC分类号： H01S5/18305 , H01S5/12 , H01S5/106 , H01S5/1206 , H01S5/1215 , H01S5/1225 , H01S5/18308 , H01S5/2072
摘要： A distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different Bragg wavelengths, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation through variation of the refractive indexes of the regions nonuniformly around an average value.
摘要翻译：一种配置有光栅的分布式反馈半导体激光器，其通过设置在光学谐振器内部的周期性波纹来实现光学反馈。光谐振器具有至少两个具有不同布拉格波长的区域，并且这些区域沿光轴方向纵向布置。激光装置可以通过使区域的折射率不均匀地围绕平均值变化来实现稳定的单纵模振荡。

3. 发明授权

US4784451A Waveguide optical switches 失效
标题翻译：波导光开关
公开(公告)号：US4784451A
公开(公告)日：1988-11-15
申请号：US762328
申请日：1985-08-05
申请人： Hitoshi Nakamura , Tadashi Fukuzawa , Koji Ishida , Hiroyoshi Matumura , Kenji Hiruma , Hiroaki Inoue
发明人： Hitoshi Nakamura , Tadashi Fukuzawa , Koji Ishida , Hiroyoshi Matumura , Kenji Hiruma , Hiroaki Inoue
IPC分类号： G02F1/313 , G02F1/315 , G02F1/015
CPC分类号： G02F1/3133 , G02F1/3138 , G02F1/315
摘要： The present invention provides a waveguide type optical switch which has a high extinction ratio and can be driven efficiently at a low voltage or a low current injection. Where the waveguide type optical switch is used as a reflection type optical switch, the switch section is of current confinement structure, and where it is used as a directional coupler type optical switch, the pn junction is formed in the position where the optical electric field takes the maximum value for the fundamental mode of the light propagating in the waveguide.
摘要翻译：本发明提供一种具有高消光比且可在低电压或低电流注入下有效驱动的波导型光开关。在波导型光开关用作反射型光开关的情况下，开关部分为电流限制结构，在用作定向耦合器型光开关的情况下，pn结形成在光电场获取在波导中传播的光的基本模式的最大值。

4. 发明授权

US4841536A Semiconductor laser devices 失效
标题翻译：半导体激光器件
公开(公告)号：US4841536A
公开(公告)日：1989-06-20
申请号：US850685
申请日：1986-04-11
申请人： Aiko Ohishi , Motohisa Hirao , Naoki Chinone , Shinji Tsuji , Hitoshi Nakamura , Hiroyoshi Matsumura
发明人： Aiko Ohishi , Motohisa Hirao , Naoki Chinone , Shinji Tsuji , Hitoshi Nakamura , Hiroyoshi Matsumura
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： This invention discloses a semiconductor laser capable of a high temperature and high output operation by forming a mesa stripe having an active layer in a reverse triangular mesa shape and forming thick semiconductor layers on both sides of the mesa stripe in such a manner that the resulting p-n junctions have a current blocking function. The invention discloses also a semiconductor laser wherein the formation of the p-n junctions described above is made before the formation of the reverse mesa stripe, and ion implantation is introduced in order to form the p-n junctions. Furthermore, the invention relates to transistors and semiconductor lasers using InGaAsP type quaternary compounds as the semiconductor. The quaternary compounds having a composition in which an energy band gap is from 1.2 to 1.4 eV are formed in a thickness of up to 1 .mu.m, and there can be thus obtained semiconductor devices having a small leakage current and being stable with time.
摘要翻译：本发明公开了一种能够通过形成具有反三角台面形状的有源层的台面条形状的高温高输出操作的半导体激光器，在台面条的两侧形成厚半导体层，使得所得到的pn 结点具有电流阻塞功能。本发明还公开了一种半导体激光器，其中在形成反向台面条之前进行上述p-n结的形成，并且引入离子注入以形成p-n结。此外，本发明涉及使用InGaAsP型四元化合物作为半导体的晶体管和半导体激光器。形成其能带隙为1.2〜1.4eV的组成的四元化合物的厚度为1μm以下，可以得到漏电流小且时间稳定的半导体器件。

5. 发明授权

US4887877A Optical devices and optical integrated circuits 失效
标题翻译：光器件和光集成电路
公开(公告)号：US4887877A
公开(公告)日：1989-12-19
申请号：US285367
申请日：1988-12-15
申请人： Hiroaki Inoue , Shinji Sakano , Hitoshi Nakamura , Toshio Katsuyama , Hiroyoshi Matsumura
发明人： Hiroaki Inoue , Shinji Sakano , Hitoshi Nakamura , Toshio Katsuyama , Hiroyoshi Matsumura
IPC分类号： G02F1/313 , G02F3/00
CPC分类号： G02F3/00 , G02F1/3138
摘要： An optical device and an optical integrated circuit which incorporate an optical switch and have a novel function. Light sources are respectively coupled to two input ends of an X-type 2.times.2 optical switch, and light receivers are respectively coupled to two output ends of the optical switch, thereby obtaining an optical device which is capable of performing both AND and OR logics. A light source is coupled to one input end of an optical switch, and a light receiver is provided at one output end from which the light emitted from the light source emerges when no electric power is supplied to the optical switch, whereby it is possible to construct a system in which, even when one terminal has a power failure, there is no hindrance to other terminals. If an optical switch is arranged such as to use driving electric power as a modulating signal, the optical switch can serve as a modulator in which the output from one output end can be employed to monitor a modulated optical signal. In addition, if the optical switch is formed into, e.g., a carrier injection type optical switch using a semiconductor, the above-described devices can be fabricated as integrated circuit.
摘要翻译：一种光学装置和光学集成电路，其包括光学开关并具有新颖的功能。光源分别耦合到X型2x2光开关的两个输入端，并且光接收器分别耦合到光开关的两个输出端，从而获得能够执行AND和OR逻辑的光学装置。光源耦合到光开关的一个输入端，并且在一个输出端提供光接收器，当光源没有电力供应到光开关时，从该光源发射的光会从该光源发射出来，因此可以构建一个系统，其中即使一个终端具有电源故障，也不会妨碍其他终端。如果光开关被布置为使用驱动电力作为调制信号，则光开关可以用作调制器，其中可以采用来自一个输出端的输出来监视调制的光信号。此外，如果光开关形成为例如使用半导体的载流子注入型光开关，则可以将上述器件制造为集成电路。

6. 发明授权

US4900134A Optical device 失效
标题翻译：光学装置
公开(公告)号：US4900134A
公开(公告)日：1990-02-13
申请号：US138874
申请日：1987-12-29
申请人： Hiroaki Inoue , Toshio Katsuyama , Hiroyoshi Matsumura , Shinji Sakano , Hitoshi Nakamura
发明人： Hiroaki Inoue , Toshio Katsuyama , Hiroyoshi Matsumura , Shinji Sakano , Hitoshi Nakamura
IPC分类号： G02F1/015 , G02F1/01 , G02F1/017 , G02F1/35 , G02F3/02
CPC分类号： B82Y20/00 , G02F1/0126 , G02F1/01716
摘要： An optical device having a material exhibits an optical rectification effect is disclosed. The optical device utilizes direct current polarization which is induced in the material by a control light. The induction of the direct current polarization in the material by the control light changes the refractive index and absorption spectrum of the material. This is based on the so-called electrooptic effect and Franz-Keldysh effect. The present invention provides the optical device according to which external incident light can be modulated at high speed with the control light by utilizing the change of the refractive index or the change of the absorption spectrum.

7. 发明授权

US4840446A Photo semiconductor device having a multi-quantum well structure 失效
标题翻译：具有多量子阱结构的光电半导体器件
公开(公告)号：US4840446A
公开(公告)日：1989-06-20
申请号：US094601
申请日：1987-09-09
申请人： Hitoshi Nakamura , Shinji Sakano , Hiroaki Inoue , Toshio Katsuyama , Hiroyoshi Matsumura
发明人： Hitoshi Nakamura , Shinji Sakano , Hiroaki Inoue , Toshio Katsuyama , Hiroyoshi Matsumura
IPC分类号： G02B6/12 , G02F1/015 , G02F1/017 , G02F1/025 , G02F1/313 , H01S5/00
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/3138 , G02F2001/0152
摘要： A multi-quantum well structure which is formed by laminating thin semiconductor layers is provided with means for injecting carriers in a direction which is parallel to the surface of the laminated thin semiconductor layers, whereby it is possible to obtain satisfactory changes in refractive index of the carrier injection portion. For example, if the total reflection region of an optical switch consisting of optical waveguides which cross each other is provided with a multi-quantum well structure wherein carriers are injected in a direction parallel to the surface of the well, the extinction ratio characteristics of the device can be improved.
摘要翻译：通过层叠薄的半导体层而形成的多量子阱结构设置有用于在与层叠的薄半导体层的表面平行的方向上注入载流子的装置，由此可以获得令人满意的折射率变化载体注入部分。例如，如果由彼此交叉的光波导构成的光开关的全反射区域设置有多量子阱结构，其中载流子沿平行于阱表面的方向注入，则消光比特性装置可以改进。

8. 发明授权

US4813757A Optical switch including bypass waveguide 失效
标题翻译：光开关包括旁路波导
公开(公告)号：US4813757A
公开(公告)日：1989-03-21
申请号：US122343
申请日：1987-11-18
申请人： Shinji Sakano , Hiroaki Inoue , Hiroyoshi Matsumura , Hitoshi Nakamura , Toshio Katsuyama , Naoki Chinone
发明人： Shinji Sakano , Hiroaki Inoue , Hiroyoshi Matsumura , Hitoshi Nakamura , Toshio Katsuyama , Naoki Chinone
IPC分类号： G02B6/28 , G02F1/313 , G02B6/10
CPC分类号： G02B6/2804 , G02F1/3137 , G02F1/3138
摘要： Herein disclosed is a branch type optical switch having three or more optical waveguides capable of being coupled to one another in a coupling region, in which is formed a refractive index changing portion for effecting the function of the branch type optical switch by changing the refractive index thereof. This optical switch has a small coupling loss and an excellent extinction ratio. Also disclosed is an intersection type optical switch having two or more optical waveguides intersecting each other. The input optical waveguide and the output waveguide are connected at their intersection by means of a bypass optical waveguide to construct the above-specified branch type optical switch in the coupling regions of the bypass optical waveguides and the input and output optical waveguides, and the bypass optical waveguide has a curved or polygonal shape. Thus, it is possible to provide a small-sized optical switch which has an excellent extinction ratio and little variability in characteristics.
摘要翻译：这里公开了一种分支型光开关，其具有能够在耦合区域中彼此耦合的三个或更多个光波导，其中形成折射率变化部分，以通过改变折射率来实现分支型光开关的功能其中。该光开关具有小的耦合损耗和优异的消光比。还公开了具有彼此相交的两个以上的光波导的交叉型光开关。输入光波导和输出波导通过旁路光波导在其交叉点处连接，以在旁路光波导和输入和输出光波导的耦合区域中构建上述指定的分支型光开关，并且旁路光波导具有弯曲或多边形。因此，可以提供具有优异的消光比和特性变化小的小型光开关。

9. 发明授权

US06822271B2 Semiconductor photodetector and optical transmitting device 失效
标题翻译：半导体光电检测器和光发射装置
公开(公告)号：US06822271B2
公开(公告)日：2004-11-23
申请号：US09485852
申请日：2000-02-17
申请人： Toshiyuki Mogi , Kazumi Kawamoto , Shinji Tsuji , Hitoshi Nakamura , Masato Shishikura , Satoru Kikuchi
发明人： Toshiyuki Mogi , Kazumi Kawamoto , Shinji Tsuji , Hitoshi Nakamura , Masato Shishikura , Satoru Kikuchi
IPC分类号： H01L2980
CPC分类号： G02B6/4224
摘要： In aiming at cost lowering of an optical module and an optical transmission apparatus and with the objective of providing a semiconductor light receiving element that has a good coherence with the other edge emitting/incidence type optical devices and is capable of performing the positioning easily and with a high accuracy, in the edge emitting/incidence type light receiving element in which the light absorbing layer 19 has been formed, the space region is formed so as to provide at least 100 &mgr;m2 of the marker detecting region 24, thereby facilitating detection of marker 23 on the optical device 26 and executing the positioning of the light receiving element with a high accuracy, the space region resulting from eliminating a part of the light absorbing layer 19 that absorbs the detection light of the light receiving element, the transmission amount of the detection light toward the marker detecting region that is parallel to a primary plane being equal to 30% or higher, the detection light having penetrated and transmitted the primary plane of the light receiving element.
摘要翻译：为了降低光学模块和光学传输装置的成本，并且为了提供与其它边缘发射/入射型光学装置具有良好相干性的半导体光接收元件，并且能够容易地执行定位在其中形成有光吸收层19的边缘发射/入射型光接收元件中形成高精度，形成空间区域，以便提供标记检测区域24的至少100微米2，从而便于检测光学装置26上的标记23，并且以高精度执行光接收元件的定位，由消除吸收光接收元件的检测光的光吸收层19的一部分而产生的空间区域，透射检测光朝着与主平面平行的标记检测区域的检测光量等于30％以上 n光穿过并透射光接收元件的主平面。

10. 发明授权

US5308995A Semiconductor strained SL APD apparatus 失效
标题翻译：半导体应变SL APD装置
公开(公告)号：US5308995A
公开(公告)日：1994-05-03
申请号：US910480
申请日：1992-07-08
申请人： Shinji Tsuji , Hitoshi Nakamura
发明人： Shinji Tsuji , Hitoshi Nakamura
IPC分类号： H01L31/0352 , H01L31/107 , H01L27/14
CPC分类号： H04B10/505 , B82Y20/00 , H01L31/035236 , H01L31/1075
摘要： By making the lattice constant of barrier layers of a superlattice avalanche photodiode lower than the lattice constant of well layers to apply a tensile stress to the barrier layers, a high gain-bandwidth product can be obtained with a high ionization rate ratio kept.
摘要翻译：通过使超晶格雪崩光电二极管的阻挡层的晶格常数低于阱层的晶格常数，以向势垒层施加拉伸应力，可以保持高电离速率比获得高增益带宽积。

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