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1. 发明授权

US4737015A Optical waveguide having a silicon oxi-nitride layer 失效
标题翻译：具有硅氧化物层的光波导
公开(公告)号：US4737015A
公开(公告)日：1988-04-12
申请号：US674770
申请日：1984-11-26
申请人： Koji Ishida , Hiroyoshi Matsumura , Kenji Hiruma , Kazuyuki Nagatsuma , Akihito Hongo
发明人： Koji Ishida , Hiroyoshi Matsumura , Kenji Hiruma , Kazuyuki Nagatsuma , Akihito Hongo
IPC分类号： G02B6/00 , G02B6/02 , G02B6/122 , G02B6/13 , G02B6/132
CPC分类号： G02B6/132 , G02B6/122
摘要： An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N.sub.2 and O.sub.2 gases.
摘要翻译：一种光波导，包括形成在基板上的层，其具有氧化硅和氮化硅的混合组成，并且具有范围在氧化硅和氮化硅的折射率之间的任意值。所述混合组合物的层可以形成在基板上，以通过使用Si靶的溅射方法和控制由N 2和O 2气体的混合物组成的溅射气体的组成来容易地制造本发明的光波导。

2. 发明授权

US4693543A Optical integrated circuit 失效
标题翻译：光集成电路
公开(公告)号：US4693543A
公开(公告)日：1987-09-15
申请号：US711507
申请日：1985-03-07
申请人： Hiroyoshi Matsumura , Koji Ishida
发明人： Hiroyoshi Matsumura , Koji Ishida
IPC分类号： G02B6/12 , G02B6/122 , G02F1/01 , G02F1/025 , G02F1/03 , G02F1/035 , G02F1/313
CPC分类号： G02F1/011 , G02B6/122
摘要： The present invention relates to an improvement in the optical transmission characteristics of a ridged type of optical waveguide in an optical integrated circuit. The invention is directed to reducing the effects of irregularities in the ridge sides on the optical transmission losses of the optical waveguide. According to the present invention, therefore, a hardened film of a heat-resistant, high-molecular resin is applied over the ridges and the optical waveguide, greatly reducing the optical transmission losses in the optical waveguide. An appropriate thickness of the heat-resistant, high-molecular resin film is between 200 to 1,000 nm, in consideration of the electric and magnetic fields applied thereto for the operation of the circuit. The present invention makes it possible to provide an optical integrated circuit with an optical waveguide which has low optical transmission losses.
摘要翻译： PCT No.PCT / JP84 / 00311 Sec。 371日期：1985年3月7日 102（e）1985年3月7日PCT申请日1984年6月15日PCT公布。公开号WO85 / 00431 日本1985年1月31日。本发明涉及光集成电路中脊形光波导的光传输特性的改进。本发明旨在减少脊侧上的不规则性对光波导的光传输损耗的影响。因此，根据本发明，在脊和光波导上施加耐热高分子树脂的硬化膜，大大降低了光波导中的光传输损耗。考虑到施加到其上的用于操作电路的电场和磁场，耐热高分子树脂膜的适当厚度在200至1000nm之间。本发明使得可以提供具有低光传输损耗的光波导的光集成电路。

3. 发明授权

US4737003A Optical switching device utilizing multiple quantum well structures between intersecting waveguides 失效
标题翻译：在交叉波导之间利用多个量子阱结构的光学开关器件
公开(公告)号：US4737003A
公开(公告)日：1988-04-12
申请号：US684784
申请日：1984-12-21
申请人： Hiroyoshi Matsumura , Naoki Chinone , Koji Ishida
发明人： Hiroyoshi Matsumura , Naoki Chinone , Koji Ishida
IPC分类号： G02F1/295 , G02F1/31 , G02F1/313 , G02F1/315 , G02B6/10 , G02F1/01 , H01L27/12
CPC分类号： G02F1/315 , G02F1/3138
摘要： An optical switch wherein a stripe layer of a compound semiconductor whose refractive index is changed by changing a carrier concentration thereof is disposed so as to cut off both optical waveguides at a position of a longer diagonal line of an intersection portion between the optical waveguides formed on a substrate of a compound semiconductor and intersecting each other at a predetermined angle, and the refractive index is changed by causing current to flow to the stripe layer.
摘要翻译：一种光学开关，其中折射率通过改变载流子浓度而改变的化合物半导体的条纹层被设置成在形成在其上的光波导之间的交叉部分的较长对角线的位置处切断两个光波导化合物半导体的基板，以预定的角度彼此交叉，并且通过使电流流向条纹层来改变折射率。

4. 发明授权

US4784451A Waveguide optical switches 失效
标题翻译：波导光开关
公开(公告)号：US4784451A
公开(公告)日：1988-11-15
申请号：US762328
申请日：1985-08-05
申请人： Hitoshi Nakamura , Tadashi Fukuzawa , Koji Ishida , Hiroyoshi Matumura , Kenji Hiruma , Hiroaki Inoue
发明人： Hitoshi Nakamura , Tadashi Fukuzawa , Koji Ishida , Hiroyoshi Matumura , Kenji Hiruma , Hiroaki Inoue
IPC分类号： G02F1/313 , G02F1/315 , G02F1/015
CPC分类号： G02F1/3133 , G02F1/3138 , G02F1/315
摘要： The present invention provides a waveguide type optical switch which has a high extinction ratio and can be driven efficiently at a low voltage or a low current injection. Where the waveguide type optical switch is used as a reflection type optical switch, the switch section is of current confinement structure, and where it is used as a directional coupler type optical switch, the pn junction is formed in the position where the optical electric field takes the maximum value for the fundamental mode of the light propagating in the waveguide.
摘要翻译：本发明提供一种具有高消光比且可在低电压或低电流注入下有效驱动的波导型光开关。在波导型光开关用作反射型光开关的情况下，开关部分为电流限制结构，在用作定向耦合器型光开关的情况下，pn结形成在光电场获取在波导中传播的光的基本模式的最大值。

5. 发明申请

US20110259270A1 CARBON COMPONENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：碳组分及其制造方法
公开(公告)号：US20110259270A1
公开(公告)日：2011-10-27
申请号：US13090261
申请日：2011-04-20
申请人： Seiji MINOURA , Jun Ohashi , Toshiki Ito , Koji Ishida , Fumihito Ogawa
发明人： Seiji MINOURA , Jun Ohashi , Toshiki Ito , Koji Ishida , Fumihito Ogawa
IPC分类号： C30B25/12 , B32B38/06
CPC分类号： C04B41/009 , C04B37/005 , C04B37/008 , C04B41/5057 , C04B41/5059 , C04B41/5062 , C04B41/5064 , C04B41/87 , C04B2235/72 , C04B2237/08 , C04B2237/083 , C04B2237/086 , C04B2237/363 , C04B2237/64 , C04B2237/72 , C04B2237/86 , C23C14/505 , C23C16/458 , C23C16/4581 , C23C16/4582 , C23C16/4583 , C23C16/4584 , C23C16/4588 , C30B25/12 , C30B35/00 , Y10T156/1039 , C04B41/4531 , C04B41/4572 , C04B35/52
摘要： A carbon component having a hole therein and an outer surface covered with a ceramic coating, and a method for manufacturing the carbon component are provided. The carbon component includes two carbon plate members joined together. The hole is defined by a groove formed on a mating surface of at least one of the carbon plate members and a mating portion of the other of the carbon plate members, which opposes the groove. An inner surface of the hole including a surface of the groove is entirely covered with a ceramic coating.
摘要翻译：提供了其中具有孔的碳成分和被陶瓷涂层覆盖的外表面，以及制造碳成分的方法。碳组分包括连接在一起的两个碳板构件。孔由形成在碳板构件中的至少一个的配合表面上的槽和与槽相对的另一个碳板构件的配合部分限定。包括凹槽表面的孔的内表面完全被陶瓷涂层覆盖。

6. 发明授权

US5324959A Semiconductor optical device having a heterointerface therein 失效
标题翻译：其中具有异质界面的半导体光学器件
公开(公告)号：US5324959A
公开(公告)日：1994-06-28
申请号：US883933
申请日：1992-05-14
申请人： Hitoshi Nakamura , Shoichi Hanatani , Chiaki Notsu , Tsukuru Ohtoshi , Koji Ishida
发明人： Hitoshi Nakamura , Shoichi Hanatani , Chiaki Notsu , Tsukuru Ohtoshi , Koji Ishida
IPC分类号： H01L31/107 , H01L31/0352 , H01L29/205 , H01L31/06
CPC分类号： B82Y20/00 , H01L31/035236
摘要： A semiconductor device includes a region in which carriers are transferred in the lamination direction of a multiple quantum well, such as a multiple quantum well multiplication layer of a superlattice APD. A superlattice structure with a varying well width is introduced to a hetero-interface present in the transfer region, thereby preventing pile-up of the carriers.
摘要翻译：半导体器件包括其中载流子在多量子阱的层叠方向上传输的区域，例如超晶格APD的多量子阱乘法层。将具有不同孔宽度的超晶格结构引入存在于转移区域中的异质界面，从而防止载体堆积。

7. 发明授权

US4476586A IF Signal processing circuit in a receiver 失效
标题翻译： IF接收机中的信号处理电路
公开(公告)号：US4476586A
公开(公告)日：1984-10-09
申请号：US464167
申请日：1983-02-07
申请人： Koji Ishida
发明人： Koji Ishida
IPC分类号： H03D3/00 , H04B1/26
CPC分类号： H03D3/004
摘要： In an IF signal processing circuit in an FM receiver, distortion introduced by an IF filter is eliminated without degrading a selection characteristic thereof. The circuit includes a front end which converts an FM-RF signal into a first IF signal; an IF filter; an FM detector which detects the first IF signal which has passed through the IF filter; an FM modulation circuit which outputs an FM modulation signal in accordance with a detection output of the FM detector; a mixer for mixing the FM modulation signal with the first IF signal and providing a second IF signal; and another mixer for mixing the second IF signal with the FM modulation signal to convert into the first IF signal. The first IF signal thus converted is delivered to an FM detector.
摘要翻译：在FM接收机中的IF信号处理电路中，消除由IF滤波器引入的失真，而不降低其选择特性。该电路包括将FM-RF信号转换成第一IF信号的前端; 中频滤波器 FM检测器，其检测已经通过IF滤波器的第一IF信号; FM调制电路，其根据FM检测器的检测输出输出FM调制信号; 混频器，用于将FM调制信号与第一IF信号混频并提供第二IF信号; 以及用于将第二IF信号与FM调制信号混合以转换成第一IF信号的另一个混频器。如此转换的第一IF信号被传送到FM检测器。

8. 发明授权

US08436352B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US08436352B2
公开(公告)日：2013-05-07
申请号：US13156681
申请日：2011-06-09
申请人： Yoshinobu Kaneda , Koji Ishida
发明人： Yoshinobu Kaneda , Koji Ishida
IPC分类号： H01L23/58
CPC分类号： G01R31/2896 , G01R31/2884 , H01L23/585 , H01L23/647 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： Whether there is a defect such as chipping of a die or separation of a resin in a wafer level package is electrically detected. A peripheral wiring is disposed along four peripheries of a semiconductor substrate outside a circuit region and pad electrodes P1-P8. The peripheral wiring is formed on the semiconductor substrate and is made of a metal layer that is the same layer as or an upper layer of a metal layer forming the pad electrodes P1-P8, or a polysilicon layer. A power supply electric potential Vcc is applied to a first end of the peripheral wiring, while a ground electric potential Vss is applied to a second end of the peripheral wiring through a resistor R2. A detection circuit is connected to a connecting node N1 between the peripheral wiring and the resistor R2, and is structured to generate an anomaly detection signal ERRFLG based on an electric potential at the connecting node N1.
摘要翻译：电子检测是否存在诸如芯片碎裂或晶片级封装中树脂分离的缺陷。外围布线沿着电路区域外侧的半导体基板的四周以及焊盘电极P1〜P8配置。外围布线形成在半导体基板上，并且由与构成焊盘电极P1-P8的金属层相同的层或上层的金属层或多晶硅层构成。电源电位Vcc被施加到外围配线的第一端，而接地电位Vss通过电阻器R2施加到外围配线的第二端。检测电路与外围配线和电阻R2之间的连接节点N1连接，构成为根据连接节点N1的电位生成异常检测信号ERRFLG。

9. 发明授权

US08084585B2 Anti-ILT7 antibody 有权
标题翻译：抗ILT7抗体
公开(公告)号：US08084585B2
公开(公告)日：2011-12-27
申请号：US12064957
申请日：2006-12-20
申请人： Yumiko Kamogawa , Minkwon Cho , Naoko Arai , Koji Ishida
发明人： Yumiko Kamogawa , Minkwon Cho , Naoko Arai , Koji Ishida
IPC分类号： C07K16/00 , C12P21/08 , C12N5/07 , C12N5/16 , A61K39/395
CPC分类号： C07K16/2803 , A61K2039/505 , A61K2039/545 , C07K16/28 , C07K2317/24 , C07K2317/34 , C07K2317/56 , C07K2317/734 , C07K2317/77 , C12N5/00 , C12N2510/02 , G01N33/566 , G01N33/56972 , G01N33/577 , G01N33/6866 , G01N2333/555 , G01N2333/705
摘要： An antibody binding to IPC was obtained by using an animal cell in which a cell membrane protein associatable with ILT7 was co-expressed as an immunogen. The antibody of the invention has a high specificity which allows immunological distinction between other ILT family molecules and ILT7. The anti-ILT7 antibody of the invention bound to IPC and inhibited the activity thereof. With the anti-ILT7 antibody of the invention, the IPC activity can be inhibited and an interferon-related disease can be treated or prevented. ILT7 expression is maintained even in IPC in the presence of IFNα. Therefore, an inhibitory action of IPC activity by the anti-ILT7 antibody can be expected even in an autoimmune disease patient with an increased production of IFNα.
摘要翻译：通过使用与ILT7相关的细胞膜蛋白共表达作为免疫原的动物细胞获得与IPC结合的抗体。本发明的抗体具有高特异性，其允许其他ILT家族分子和ILT7之间的免疫学区别。本发明的抗ILT7抗体结合IPC并抑制其活性。利用本发明的抗ILT7抗体，可以抑制IPC活性并且可以治疗或预防干扰素相关疾病。在IFNα存在下，甚至在IPC中也维持ILT7表达。因此，即使在具有增加的IFNα产生量的自身免疫疾病患者中也能预期抗ILT7抗体的IPC活性的抑制作用。

10. 发明授权

US5113072A Device having superlattice structure, and method of and apparatus for manufacturing the same 失效
标题翻译：具有超级结构的装置及其制造方法和装置
公开(公告)号：US5113072A
公开(公告)日：1992-05-12
申请号：US597354
申请日：1990-10-10
申请人： Hiroshi Yamaguchi , Keiya Saito , Fumikazu Itoh , Koji Ishida , Shinji Sakano , Masao Tamura , Shoji Shukuri , Tohru Ishitani , Tsuneo Ichiguchi
发明人： Hiroshi Yamaguchi , Keiya Saito , Fumikazu Itoh , Koji Ishida , Shinji Sakano , Masao Tamura , Shoji Shukuri , Tohru Ishitani , Tsuneo Ichiguchi
IPC分类号： H01L21/20 , G01Q30/16 , G01Q60/44 , H01J37/08 , H01J37/305 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/265 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/338 , H01L21/822 , H01L21/8252 , H01L29/06 , H01L29/15 , H01L29/778 , H01L29/812
CPC分类号： H01J37/3056 , B82Y10/00 , H01J37/08 , H01L21/2633 , H01L21/26546 , H01L21/8221 , H01L21/8252 , H01L29/151 , Y10S148/046 , Y10S148/051 , Y10S148/084 , Y10S148/16 , Y10S438/962
摘要： Disclosed is an apparatus for forming a device having a fine structure, the apparatus including a high intensity ion source. The apparatus can be used to form fine grooves and/or a fine film, by supplying a reactive gas to the surface to be etched or coated while irradiating a focused ion beam on the surface. A laser or electron beam can be irradiated on substantially the same axis as that of the focused ion beam, whereby defects arising due to ion beam processing can be repaired. The apparatus can further include ion beam current detection and measurement structure to determine when a predetermined thickness of coating or depth of etching is achieved. The apparatus can include multiple chambers sequentially holding the surface treated, and can include a scanning electron microscope for scanning the surface being coated or etched.

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