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1. 发明专利

JP2001144011A SUBSTRATE TREATMENT EQUIPMENT 失效
公开(公告)号：JP2001144011A
公开(公告)日：2001-05-25
申请号：JP2000265187
申请日：2000-09-01
申请人： TOKYO ELECTRON LTD
发明人： UEDA KAZUNARI , SENBA NORIO , AKUMOTO MASAMI
IPC分类号： G03F7/16 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide substrate treatment equipment wherein air whose temperature and humidity are controlled with high precision can be supplied to a treatment unit, and simplification of the equipment and reduction of running cast like consumption power can be realized. SOLUTION: A control unit 200 which takes in the outside air, controls its temperature to be lower than a previously set temperature of air in a resist coating treatment unit(COT), and controls the humidity to be a specified value is installed independently of the resist coating treatment unit(COT). A heating unit 270 which heats the air whose temperature and humidity are controlled by the control unit 200 at a specified temperature and supplies the air having specified temperature and humidity in the treatment unit is installed in the resist coating treatment unit(COT) or in the vicinity thereof.

2. 发明专利

JP2001143985A SUBSTRATE PROCESSING APPARATUS 失效
公开(公告)号：JP2001143985A
公开(公告)日：2001-05-25
申请号：JP2000265186
申请日：2000-09-01
申请人： TOKYO ELECTRON LTD
发明人： YANO MITSUTERU , SENBA NORIO , KANEKAWA KOZO , OI KAZUHIKO
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which downsizes an apparatus for adjusting the temperature and humidity of air to be fed to a resist coating unit and a developing unit and reduces the running cost such as power consumption, etc. SOLUTION: Fresh air taken from the outside is cooled by a refrigerator 61 and then flowed to a low temperature passage of a heat exchanger 62 while fresh air is flowed to a high temperature passage of the heat exchanger 62 to heat exchange the cooled air with the fresh air. The air flowing in the low temperature passage of the heat exchanger 62 is warmed by the air flowing in the high temperature passage, and then heated and humidified by a heater 63 and a humidifier 64 to feed an air at a specified temperature and a specified humidity to a resist coating unit (COT). The air flowing in the high temperature passage of the heat exchanger 62 is cooled by the air flowing in the low temperature passage and then heated by a heater 66 to feed an air at a specified temperature to a developing unit (DEV).

3. 发明专利

JPH113851A LIQUID TREATMENT DEVICE AND LIQUID TREATMENT METHOD 失效
公开(公告)号：JPH113851A
公开(公告)日：1999-01-06
申请号：JP16955297
申请日：1997-06-11
申请人： TOKYO ELECTRON LTD
发明人： SENBA NORIO , KITANO JUNICHI , KATANO TAKAYUKI
IPC分类号： G03F7/16 , B01D53/14 , B05B15/12 , B05C11/08 , G03F7/30 , H01L21/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce burden on a plant exhaust system, by circulating and reusing an atmosphere in a liquid treatment device enclosed with a casing, without discharging to the plant exhaust system, etc. SOLUTION: Atmospheres in a casing 61 of a development process device DEV1 and a casing 71 of a resist liquid coating device COT1 are introduced from an exhaust pipe 81 through an introduction pipe 50 into a filter device 101. The air cleaned and controlled in temperature and relative humidity in the filter device 101 containing a liquid-vapor contact space is returned from a delivery pipe 51 through a wall duct 46 to the inside of the casings 61 and 71.

4. 发明专利

JPH0878321A TREATMENT METHOD AND TREATMENT EQUIPMENT 失效
公开(公告)号：JPH0878321A
公开(公告)日：1996-03-22
申请号：JP1868095
申请日：1995-01-10
申请人： TOKYO ELECTRON LTD , TEL KYUSHU KK
发明人： HASEBE KEIZO , KONISHI NOBUO , NAGASHIMA SHINJI , SENBA NORIO
IPC分类号： G03F7/30 , G03F7/38 , H01L21/027
摘要： PURPOSE: To form a hydrophilic resist film without effecting the concentration of a developer by forming a hydrophilic film consisting of a neutral substance before the surface of the resist film applied onto a bode to be treated is developed and treated. CONSTITUTION: A neutral and hydrophilic liquid stored in a tank 62 is fed through a nozzle 60 from the upper section of a body to be treated W supported under a horizontal state by a spin chuck 26. A PVA aqueous solution (an aqueous polyvinyl alcohol solution) having viscosity of less than 10cp, favorably 2-3cp or an aqueous saccharose solution is used as the liquid. Accordingly, the upper section of a resist film A is supplied with a fixed quantity of the neutral and hydrophilic liquid on the top face of the body to be treated W under a stationary state. The liquid is spread on the top face of the body to be treated W, the whole surface of the resist film A, by centrifugal force, thus forming a hydrophilic film B.

5. 发明专利

JP2000299280A SUBSTRATE PROCESSING APPARATUS AND AIR FEED METHOD 失效
公开(公告)号：JP2000299280A
公开(公告)日：2000-10-24
申请号：JP2000006309
申请日：2000-01-12
申请人： TOKYO ELECTRON LTD
发明人： SENBA NORIO
IPC分类号： B05D3/04 , B05C9/08 , G03F7/16 , G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a new substrate processing apparatus which is more energy-saving and space-saving than the conventional apparatus and is capable of controlling its temperature and humidity. SOLUTION: An application development device 1 is equipped with a resist applicator 30 with a cup CP, and an air feeder 81 feeds air of prescribed temperature and humidity into the cup CP, where the air feeder 81 is equipped with a cooling dehumidifying section 86, a bypass circuit 87, a heating section 88, humidifying section 89, and a blower 90, 55% of introduced air is cooled down and dehumidified in the cooling/dehumidifying section 86, 45% of the introduced air is made to pass through the bypass circuit 89, a mixed air of cooled and dehumidified air and air that passes through the bypass circuit 87 is heated in the heating section 88 and humidified in the humidifying section 89.

6. 发明专利

JP2000150335A TREATMENT APPARATUS 失效
公开(公告)号：JP2000150335A
公开(公告)日：2000-05-30
申请号：JP33849998
申请日：1998-11-12
申请人： TOKYO ELECTRON LTD
发明人： KANEDA MASATOSHI , SENBA NORIO , KIMURA YOSHIO , AKUMOTO MASAMI , SAKAMOTO YASUHIRO , JINNAI NOBUYUKI
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To make it possible to control the temperature and humidity of atmosphere for treatment units individually and adjust the whole treatment units under the same condition or adjust each treatment unit under different conditions according to the necessary treatment for each treatment unit. SOLUTION: By using a temperature control unit 81 and a humidity control unit 82, a cleaning gas fed from a common gas feeding source 8 is adjusted for a plurality of coating units in a way that the temperature and moisture content of the gas are made lower than the necessary ones that are controlled by each atmosphere adjusting unit 7 at the application units. The cleaning gas is adjusted again through a heater 73 and a humidifier 74 to a desired temperature and moisture content level in each atmosphere adjusting unit 7, so the cleaning gas with the same temperature and humidity can be fed to a plurality of coating units, and all the atmosphere is adjusted to the same for each coating unit.

7. 发明专利

JPH1092719A RESIST PROCESSING EQUIPMENT 失效
公开(公告)号：JPH1092719A
公开(公告)日：1998-04-10
申请号：JP24349296
申请日：1996-09-13
申请人： TOKYO ELECTRON LTD
发明人： SENBA NORIO
IPC分类号： G03F7/30 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To efficiently remove a processing solution which has been fed into a vacuum system in deaeration of the processing solution by providing deaeration means for carrying out deaeration of the processing solution and causing the deaeration means to include a trap tank for housing the processing solution which has leaked in carrying out deaeration of the processing solution. SOLUTION: A leaked developer solution is housed in a trap tank 21. A sensor 23 detects the liquid surface, and when a predetermined liquid surface is reaches, a solenoid valve 27 is closed. At this point, by closing the solenoid valve 27, an ejector 22 is prevented from driving. Thus, when the leaking developer solution housed in the trap tank 21 reaches a predetermined quantity, deaeration is stopped and the leakage developer solution is drained from the trap tank 21. Then, the solenoid valve 27 is opened to drive the ejector 22, and deaeration is again carried out.

8. 发明专利

JPH097936A RESIST PROCESSING DEVICE AND METHOD THEREFOR 失效
公开(公告)号：JPH097936A
公开(公告)日：1997-01-10
申请号：JP33204095
申请日：1995-12-20
申请人： TOKYO ELECTRON LTD , TEL KYUSHU KK
发明人： HASEBE KEIZO , IINO HIROYUKI , SENBA NORIO , KIMURA YOSHIO
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To eliminate bubble from processing liquid without changing its density by deaerating the processing liquid on the way of processing liquid flow which is provided between processing liquid sending means and a processing liquid supplying nozzle, and to perform resist processing with high accuracy. SOLUTION: A tank 1 storing developer 2 is junctioned with a gas cylinder 3 storing pressurized gas such as nitrogen via a piping 4. An end of the piping 5 is soaked into the developer 2 in the tank 1. An intermediate tank 6 and a processing liquid deaerating mechanism 7 are provided in order. The developer 2 in the tank 1 is pressurized and transferred toward a nozzle 12 through the piping 5 by the pressurized gas in the gas cylinder 3 being supplied to the tank 1 through the piping 4. The piping 5 is divided into piping 5a and piping 5b at the lower portion of the processing liquid deaerating mechanism 7. Each piping provides with flow meters 8a and 8b, filters 9a and 9b and water jackets 10a and 10b and so on in order.

9. 发明专利

JPH07326554A METHOD AND DEVICE FOR TREATMENT 失效
公开(公告)号：JPH07326554A
公开(公告)日：1995-12-12
申请号：JP13936494
申请日：1994-05-30
申请人： TOKYO ELECTRON LTD , TEL KYUSHU KK
发明人： OKADA SHINJI , HASEBE KEIZO , SEKIMOTO EIICHI , KIMURA YOSHIO , GOTO KAZUYUKI , MATSUMURA KIMIHARU , SENBA NORIO , MURAKAMI HIROSHI , NAGASHIMA SHINJI , YAMAGUCHI TADAYUKI
IPC分类号： H01L21/027
摘要： PURPOSE:To improve yield by preventing impact due to treatment solution supplied to the surface of a subject to be treated and above effect due to bubbles remaining in the treatment solution. CONSTITUTION:A developer supplying nozzle 20 which has a plurality of nozzle holes 25 at the bottom of a developer container 24 is connected with a developer containing tank 30 through a developer supplying tube 29, and the developer L in the developer containing tank 30 is permitted to be supplied to the surface of the wafer W from the developer supplying nozzle 20 by applying pressure by N2 gas supplied to the developer containing tank 30. In the vicinity of the nozzle holes 25 of the developer container 24, a pressure modifying member 26 which controls the liquid pressure fluctuation of the developer L is arranged. A small quantity of developer L is supplied from the developer supplying nozzle 20 in the stationary condition and a liquid film is formed on the surface of the semiconductor wafer W which is directly under the developer supplying nozzle 20. Then, the developer L of a quantity required for the prescribed liquid film thickness is supplied from the developer supplying nozzle 20, and the liquid film with a prescribed thickness is formed on the surface of the semiconductor wafer W by relatively moving the developer supplying nozzle 20 and the semiconductor wafer W.

10. 发明专利

JP2003209154A SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT METHOD 审中-公开
公开(公告)号：JP2003209154A
公开(公告)日：2003-07-25
申请号：JP2002004971
申请日：2002-01-11
申请人： TOKYO ELECTRON LTD
发明人： SENBA NORIO , MIYATA AKIRA
IPC分类号： B65G49/07 , B05C11/02 , G03B27/32 , G03C5/00 , G03D5/00 , H01L21/00 , H01L21/027 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device and a substrate treatment method capable of continuing the treatment of a substrate when a trouble occurs in an inspection device and a measuring device. SOLUTION: A resist coating/developing system 1 comprises a cassette station 11, a treatment station 13 and an inspection station 12. The inspection station 12 has, for example, a defect inspection unit (ADI), a dummy inspection unit (DMM-A), a bypass inspection unit (BMM-A), and a main wafer conveyor 31. In the case that the sampling inspection of a wafer W is carried out, when the defect inspection unit (ADI) is broken down, inspection wafers W are mounted on the bypass inspection unit (BMM-A), and the remaining wafers excluding the inspection wafers W are mounted on the dummy inspection unit (DMM-A) in accordance with the order conveyed to the inspection station 12. Then, the wafers W are conveyed out to the cassette station 11 in the order conveyed in to the inspection station 12. COPYRIGHT: (C)2003,JPO

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