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1. 发明专利

JPH07320999A METHOD AND APPARATUS FOR COATING 失效
公开(公告)号：JPH07320999A
公开(公告)日：1995-12-08
申请号：JP7986294
申请日：1994-03-25
申请人： TOKYO ELECTRON LTD , TEL KYUSHU KK
发明人： HASEBE KEIZO , FUJIMOTO AKIHIRO , INADA HIROICHI , IINO HIROYUKI , KITAMURA KATAHIRO , DEGUCHI MASATOSHI , NANBU MICHIHIRO
IPC分类号： G03F7/16 , B05C11/08 , B05D1/40 , H01L21/027
摘要： PURPOSE:To provide a method and device for coating by which the amount of a solution used for forming a coated film can be reduced and the uniformity of the film can be improved. CONSTITUTION:A spin chuck 2 supports a wafer W in a rotatable state. A solvent supplying nozzle 3 and resist solution supplying nozzle 4 are attached to an injection head 5 moved by means of a scanning mechanism 6 above the wafer W. Therefore, a resist film can be formed on one surface of the wafer W over the entire area by spreading a solvent A throughout the surface of the wafer W by rotating the wafer W at a prescribed rotating speed after moving the injection head 5 to a position above the waver W and supplying the solvent A to the surface of the wafer W while the wafer W is rotated or stopped and supplying a resist solution B to the central part of the wafer W from the nozzle 4 while the wafer W is rotated at the prescribed rotating speed.

2. 发明专利

JPH097936A RESIST PROCESSING DEVICE AND METHOD THEREFOR 失效
公开(公告)号：JPH097936A
公开(公告)日：1997-01-10
申请号：JP33204095
申请日：1995-12-20
申请人： TOKYO ELECTRON LTD , TEL KYUSHU KK
发明人： HASEBE KEIZO , IINO HIROYUKI , SENBA NORIO , KIMURA YOSHIO
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To eliminate bubble from processing liquid without changing its density by deaerating the processing liquid on the way of processing liquid flow which is provided between processing liquid sending means and a processing liquid supplying nozzle, and to perform resist processing with high accuracy. SOLUTION: A tank 1 storing developer 2 is junctioned with a gas cylinder 3 storing pressurized gas such as nitrogen via a piping 4. An end of the piping 5 is soaked into the developer 2 in the tank 1. An intermediate tank 6 and a processing liquid deaerating mechanism 7 are provided in order. The developer 2 in the tank 1 is pressurized and transferred toward a nozzle 12 through the piping 5 by the pressurized gas in the gas cylinder 3 being supplied to the tank 1 through the piping 4. The piping 5 is divided into piping 5a and piping 5b at the lower portion of the processing liquid deaerating mechanism 7. Each piping provides with flow meters 8a and 8b, filters 9a and 9b and water jackets 10a and 10b and so on in order.

3. 发明专利

DE69428391D1 未知
公开(公告)号：DE69428391D1
公开(公告)日：2001-10-31
申请号：DE69428391
申请日：1994-03-25
申请人： TOKYO ELECTRON LTD
发明人： HASEBE KEIZO , FUJIMOTO AKIHIRO , INADA HIROICHI , IINO HIROYUKI , KITAMURA SHINZI , DEGUCHI MASATOSHI , NAMBU MITSUHIRO
IPC分类号： B05C11/08 , G03F7/16
摘要： An apparatus for forming a coating film, comprises a spin chuck (2) for supporting a substrate (W) with one surface facing upward and rotating the substrate about a vertical axis, a first nozzle (3) for supplying a solvent of a coating solution on the substrate, and a second nozzle (4) for supplying the coating solution on a central portion of the substrate. The first and second nozzles are supported by a head (5) such that the supported nozzle moves between a dropping position above the substrate and a waiting position offset from the substrate. The solvent and coating solution are diffused along the surface of the substrate by rotating the spin chuck.

4. 发明专利

DE69428391T2 未知
公开(公告)号：DE69428391T2
公开(公告)日：2002-07-04
申请号：DE69428391
申请日：1994-03-25
申请人： TOKYO ELECTRON LTD
发明人： HASEBE KEIZO , FUJIMOTO AKIHIRO , INADA HIROICHI , IINO HIROYUKI , KITAMURA SHINZI , DEGUCHI MASATOSHI , NAMBU MITSUHIRO
IPC分类号： B05C11/08 , G03F7/16
摘要： An apparatus for forming a coating film, comprises a spin chuck (2) for supporting a substrate (W) with one surface facing upward and rotating the substrate about a vertical axis, a first nozzle (3) for supplying a solvent of a coating solution on the substrate, and a second nozzle (4) for supplying the coating solution on a central portion of the substrate. The first and second nozzles are supported by a head (5) such that the supported nozzle moves between a dropping position above the substrate and a waiting position offset from the substrate. The solvent and coating solution are diffused along the surface of the substrate by rotating the spin chuck.

5. 发明专利

SG130022A1 METHOD OF FORMING COATING FILM AND APPARATUS THEREFOR 未知
公开(公告)号：SG130022A1
公开(公告)日：2007-03-20
申请号：SG200400577
申请日：1994-03-25
申请人： TOKYO ELECTRON LTD
发明人： FUJIMOTO AKIHIRO , INADA HIROICHI , IINO HIROYUKI , KITAMURA SHINZI , DEGUCHI MASATOSHI , NAMBU MITSUHIRO , HASEBE KEIZO
IPC分类号： B05C11/08 , G03F7/16
摘要： An apparatus for forming a coating film, comprises a spin chuck for supporting a substrate with one surface facing upward and rotating the substrate about a vertical axis, a first nozzle for supplying a solvent of a coating solution on the substrate, and a second nozzle for supplying the coating solution on a central portion of the substrate. The first and second nozzles are supported by a head such that the supported nozzle moves between a dropping position above the substrate and a waiting position offset from the substrate. The solvent and coating solution are diffused along the surface of the substrate by rotating the spin chuck.

6. 发明专利

SG43033A1 Method of forming coating film and apparatus therefor 未知
公开(公告)号：SG43033A1
公开(公告)日：1997-10-17
申请号：SG1996002678
申请日：1994-03-25
申请人： TOKYO ELECTRON LTD
发明人： FUJIMOTO AKIHIRO , INADA HIROICHI , IINO HIROYUKI , KITAMURA SHINZI , DEGUCHI MASATOSHI , HASEBE KEIZO
IPC分类号： G03F7/16 , H01L21/00

7. 发明专利

JP2000353663A RESIST-PROCESSING APPARATUS 失效
公开(公告)号：JP2000353663A
公开(公告)日：2000-12-19
申请号：JP2000158528
申请日：2000-05-29
申请人： TOKYO ELECTRON LTD
发明人： HASEBE KEIZO , IINO HIROYUKI , SENBA NORIO , KIMURA YOSHIO
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist processing apparatus, where without changes in the concentration of a developer liquid, the dissolved gas component and air bubbles in it are removed. SOLUTION: A developer liquid is allowed to make contact with a resist film coated on a substrate for developing a resist film. Here, a nozzle which discharged/supplies a developer liquid to a resist film a developer liquid feeding means which guides in a pressurized gas to a developer liquid supply source so that the developer liquid is fed under gas pressure toward the nozzle, and a processor liquid degassing mechanism, which provided between the developer liquid feeding means and the nozzle, degasses the developer liquid before discharged through the nozzle, are provided. A processor liquid degassing mechanism 300 comprises a first tube 308 of a first diameter and a porous material, a second tube 310 of a porous material, which having a second diameter larger than that of the first one, forms a flow path where the developer liquid flows with a first tube 108, a third tube 312 of a nonporous material which has a third diameter larger than that of the second one, an inside exhaust means 322 provided inside the first tube 108, and an outside exhaust means 324 between the second tube 310 and the third tube 312.

8. 发明专利

JPH07192993A APPARATUS AND METHOD FOR PERIPHERAL EXPOSURE 失效
公开(公告)号：JPH07192993A
公开(公告)日：1995-07-28
申请号：JP34867093
申请日：1993-12-27
申请人： TOKYO ELECTRON LTD
发明人： HASEBE KEIZO , IINO HIROYUKI , SEKIGUCHI KENJI
IPC分类号： G03F7/20 , H01L21/027
摘要： PURPOSE:To exposure the periphery of both the front and the rear of an object to be treated such as a semiconductor wafer simultaneously or either one of them as desired in a region within a preset range along the peripheral edge part of the object according to the shape of the object when the peripheral edge part of the object is constituted of curved and straight parts. CONSTITUTION:In an aligner, light is irradiated on the peripheral edge part of a wafer W, and a resist film R in the peripheral edge part is exposed. The aligner is provided with a light irradiation part which emits the light on either one face of the front or rear of the wafer W and with a reflecting mirror 75 which is installed in such a way that light other than to the wafer W out of the light radiated by the light irradiation part 72 is received on the side on the other face of the wafer W and which can be moved in such a way that a desired position on the other face of the wafer W is irradiated with the light.

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