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1. 发明申请

WO0065653A9 A METHOD IN THE FABRICATION OF ORGANIC THIN-FILM SEMICONDUCTING DEVICES 审中-公开
标题翻译：有机薄膜半导体器件的制造方法
公开(公告)号：WO0065653A9
公开(公告)日：2004-08-05
申请号：PCT/NO0000127
申请日：2000-04-14
申请人： THIN FILM ELECTRONICS ASA , ROMAN LUCIMARA STOLZ , INGANAES OLLE , HAGEL OLLE , BERGGREN MAGNUS , GUSTAFSSON GOERAN , CARLSSON JOHAN
发明人： ROMAN LUCIMARA STOLZ , INGANAES OLLE , HAGEL OLLE , BERGGREN MAGNUS , GUSTAFSSON GOERAN , CARLSSON JOHAN
IPC分类号： H01L21/28 , H01L21/00 , H01L21/336 , H01L29/786 , H01L29/861 , H01L51/00 , H01L51/05 , H01L51/10 , H01L51/30 , H01L51/40 , H01L27/01 , H01L49/02
CPC分类号： H01L51/424 , H01L51/0036 , H01L51/0037 , H01L51/0038 , Y02E10/549
摘要： In a method in the fabrication of an organic thin-film semiconducting device comprising an electrode arrangement with electrodes contacting a semiconducting organic material, an anode in the electrode arrangement is made as a two-layer structure, where the first layer is a conducting or semiconducting material or a combination thereof deposited on a substrate and a second layer is a conducting polymer with a work function higher than that of the material in the first layer. A third layer consisting of semiconducting organic material and forming the active material of the device is deposited on the top of the anode, and the cathode made of a fourth layer of a metal deposited on a third layer. In a preferred embodiment a low work function metal is used in the first layer, a doped conjugated polymer such as PEDOT-PSS in the second layer, while the cathode may be formed of the same metal as used in the first layer. Use in the manufacturing of the electrode arrangement in an organic thin-film diode or in a transistor structure.
摘要翻译：在制造有机薄膜半导体器件的方法中，包括具有与半导体有机材料接触的电极的电极装置，电极装置中的阳极被制成两层结构，其中第一层是导电或半导体沉积在基底和第二层上的材料或其组合是导电聚合物，其功函数高于第一层中的材料。由半导体有机材料构成并形成器件的活性材料的第三层沉积在阳极的顶部，阴极由沉积在第三层上的第四层金属制成。在优选实施例中，在第一层中使用低功函数金属，在第二层中使用诸如PEDOT-PSS的掺杂共轭聚合物，而阴极可以由与第一层中使用的相同的金属形成。用于制造有机薄膜二极管或晶体管结构中的电极布置。

2. 发明申请

WO0225665A3 NON-VOLATILE PASSIVE MATRIX AND METHOD FOR READOUT OF THE SAME 审中-公开
标题翻译：非易失性被动矩阵及其读取方法
公开(公告)号：WO0225665A3
公开(公告)日：2002-05-16
申请号：PCT/NO0100348
申请日：2001-08-24
申请人： THIN FILM ELECTRONICS ASA , THOMPSON MICHAEL , WOMACK RICHARD , GUSTAFSSON GOERAN , CARLSSON JOHAN
发明人： THOMPSON MICHAEL , WOMACK RICHARD , GUSTAFSSON GOERAN , CARLSSON JOHAN
IPC分类号： G11C7/06 , G11C7/10 , G11C11/22 , H01L21/8246 , H01L27/105 , G11C8/12 , G11C8/14
CPC分类号： G11C7/1006 , G11C7/06 , G11C11/22
摘要： In a non-volatile passive matrix memory device (10) comprising an electrically polarizable dielectric memory material (12) exhibiting hysteresis between first and second sets (14; 15) of addressing electrodes constituting word lines (WL) and bit lines (BL) of the memory device. A memory cell (13) is defined in the memory material (12) at the overlap between a word line (WL) and a bit line (BL). The word lines (WL) are divided into segments (S) each segment sharing and being defined by adjoining bit lines (BL). Means (25) are provided for connecting each bit lines (BL) of a segment (S) with a sensing means (26) enabling simultaneous connections of all memory cells (13) of a word line segment (15) for readout via the bit lines (BL). Each sensing means (26) senses the charge flow in a bit line (BL) in order to determine a stored logicalvalue. In a readout method,a word line (WL) of a segment (S) is activated by setting its potential to a switching voltage Vs of the memory cell (13) during at least a portion of a read cycle, while keeping the bit lines (BL) of a segment (S) at zero potential, during which read cycle a logical value stored in the individual memory cells (13) is sensed by the sensing means (26).
摘要翻译：在非易失性无源矩阵存储器件（10）中，包括电可极化介质存储器材料（12），其在构成字线（WL）的寻址电极和位线（BL）的第一组和第二组（14; 15）之间呈现迟滞，存储设备。存储单元（13）在字线（WL）和位线（BL）之间的重叠处被限定在存储器材料（12）中。字线（WL）被划分成段（S），每个段共享并由相邻的位线（BL）定义。提供装置（25）用于将段（S）的每个位线（BL）与感测装置（26）连接，使得能够同时连接字线段（15）的所有存储单元（13），以经由位读出线（BL）。每个感测装置（26）感测位线（BL）中的电荷流，以便确定存储的逻辑值。在读出方法中，通过在读周期的至少一部分期间将其电位设置为存储单元（13）的开关电压Vs来激活段（S）的字线（WL），同时保持位线（S）的零电位（BL），在该期间，存储在各个存储单元（13）中的逻辑值由读取周期由感测装置（26）感测。

3. 发明申请

WO9963527A3 DATA STORAGE AND PROCESSING APPARATUS, AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：数据存储和处理装置及其制造方法
公开(公告)号：WO9963527A3
公开(公告)日：2000-02-17
申请号：PCT/NO9900181
申请日：1999-06-02
申请人： THIN FILM ELECTRONICS ASA , GUDESEN HANS GUDE , NORDAL PER ERIK , LEISTAD GEIRR I , CARLSSON JOHAN , GUSTAFSSON GOERAN
发明人： GUDESEN HANS GUDE , NORDAL PER-ERIK , LEISTAD GEIRR I , CARLSSON JOHAN , GUSTAFSSON GOERAN
IPC分类号： G06F1/16 , G11C17/00 , H01L21/768 , H01L21/822 , H01L21/98 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/00 , H01L27/10 , H01L51/40
CPC分类号： H01L51/0001 , G11C5/02 , G11C17/06 , H01L21/2026 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L27/0688 , H01L27/1021 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/11 , H01L27/11502 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： A data storage and processing apparatus comprising ROM and/or WORM and/or REWRITEABLE memory modules and/or processing modules on a substrate. The memory and/or processing modules are provided as a single main layer or multiple main layers on the top of the substrate. The apparatus comprises active components in the form of transistors and/or diodes for operating the apparatus. In one set of embodiments at least some and at most all the transistors and/or diodes for operating the apparatus are provided on or in the substrate. In another set of embodiments at least some and at most all of the layers on the top of the substrate comprise low-temperature compatible organic materials and/or low temperature compatible processed inorganic films, even without requiring transistors and/or diodes to be provided on or in the substrate. In a method for fabricating a data storage and processing apparatus of this kind, the memory and/or processing modules are provided on the substrate by depositing the layers in successive steps. The deposition and processing of the layers take place under thermal conditions that avoid subjecting an already deposited and processed underlying layer or layers to static or dynamic temperatures exceeding given stability limits, particularly in regard of organic materials.
摘要翻译：一种包括ROM和/或WORM和/或REWRITEABLE存储器模块和/或衬底上的处理模块的数据存储和处理设备。存储器和/或处理模块作为单个主层或多个主层提供在衬底的顶部上。该装置包括用于操作该装置的晶体管和/或二极管形式的有源部件。在一组实施例中，用于操作设备的至少一些和至多所有晶体管和/或二极管用于提供在衬底上或衬底中。在另一组实施方案中，衬底顶部上的至少一些和至多所有层包括低温相容的有机材料和/或低温相容的经处理的无机膜，即使不需要在二极管上提供晶体管和/或二极管或在基材中。在这种用于制造这种数据存储和处理装置的方法中，通过以连续的步骤沉积层来在存储器和/或处理模块上提供存储器和/或处理模块。层的沉积和加工在热条件下进行，避免了将已经沉积和加工的下层或多层经受超过给定稳定极限的静态或动态温度，特别是在有机材料方面。

4. 发明专利

JP2007087579A Address specification of memory matrix 审中-公开
标题翻译：存储器矩阵的地址规范
公开(公告)号：JP2007087579A
公开(公告)日：2007-04-05
申请号：JP2006287634
申请日：2006-10-23
申请人： Thin Film Electronics Asa , シンフイルムエレクトロニクスエイエスエイ
发明人： THOMPSON MICHAEL , NORDAL PER-ERIK , GUSTAFSSON GOERAN , CARLSSON JOHAN , GUDESEN HANS GUDE
IPC分类号： G02F1/133 , G11C11/22 , G09G3/20 , G09G3/36 , G11C7/06 , G11C7/10 , G11C8/18 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/22 , G09G3/20 , G09G3/3629 , G09G2300/06 , G09G2310/0251 , G09G2320/0209 , G11C7/06 , G11C7/1006 , G11C8/18
摘要： PROBLEM TO BE SOLVED: To provide a voltage to time protocol for driving (x) and (y) passive matrix address specification line in a nonvolatile memory indicating hysteresis curve of a ferroelectric object so that disturbance of memory cells being not selected is made the minimum. SOLUTION: Potentials on all word lines and bit lines are controlled temporally conforming to a protocol by controlling so that potentials on a selected word line and a bit line are approximated or made coincident to one out of the predetermined potential levels of (n) pieces, so as to connect to bit lines (single or multiple) and a circuit for detecting electric charges flowing between the bit line and a cell during the predetermined period of timing sequence given by the protocol, latching successively word lines to potentials selected from potentials of n word pieces, meanwhile, latching successively bit lines to potentials selected from potentials of (n) bit pieces. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了在指示铁电体的磁滞曲线的非易失性存储器中提供用于驱动（x）和（y）无源矩阵地址指定线的时间协议电压，使得未选择的存储器单元的干扰为做到最小。解决方案：所有字线和位线上的电位通过控制在时间上受控于协议的控制，使得所选字线和位线上的电位近似于或与（n ），以便在协议给定的定时序列的预定时段期间连接到位线（单个或多个）和用于检测在位线和单元之间流动的电荷的电路，将连续的字线锁定到从同时，将（n）位的电位中选择的电位连续的位线锁存在n 字的电位上。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006253699A Data storage/computing device, and method of manufacturing the same 审中-公开
标题翻译：数据存储/计算装置及其制造方法
公开(公告)号：JP2006253699A
公开(公告)日：2006-09-21
申请号：JP2006089948
申请日：2006-03-29
申请人： Thin Film Electronics Asa , シンフイルムエレクトロニクスエイエスエイ
发明人： GUDESEN HANS GUDE , NORDAL PER-ERIK , LEISTAD GEIRR I , CARLSSON JOHAN , GUSTAFSSON GORAN
IPC分类号： G06F1/16 , H01L27/00 , G11C16/02 , G11C17/00 , H01L21/768 , H01L21/822 , H01L21/98 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/10 , H01L51/40
CPC分类号： H01L51/0001 , G11C5/02 , G11C17/06 , H01L21/2026 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L27/0688 , H01L27/1021 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/11 , H01L27/11502 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a data storage/computing device which is equiped with an ROM and/or WORM and/or REWRITABLE memory module, and/or a computing module on a substrate, and an organic material adaptable to a low-temperature and/or an inorganic film processed at a low temperature. SOLUTION: A memory and/or a computing module is provided on a substrate by sequentially depositing a layer. The deposition and processing of the layer is carried out under thermal condition in which one or a plurality of layers deposited and processed underneath, particularly an organic material, is not subjected to a static temperature or a dynamic temperature excessively exceeding limitation for stability. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种数据存储/计算设备，其配备有ROM和/或WORM和/或可再利用存储器模块，和/或基板上的计算模块，以及适用于低温和/或在低温下处理的无机膜。解决方案：通过顺序地沉积层，在衬底上提供存储器和/或计算模块。该层的沉积和处理在其下沉积和加工的一个或多个层，特别是有机材料的热条件下不进行过度超过对稳定性的限制的静态温度或动态温度。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

CA2334287C DATA STORAGE AND PROCESSING APPARATUS, AND METHOD FOR FABRICATING THE SAME 未知
公开(公告)号：CA2334287C
公开(公告)日：2008-01-22
申请号：CA2334287
申请日：1999-06-02
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GORAN , GUDESEN HANS GUDE , NORDAL PER-ERIK , CARLSSON JOHAN , LEISTAD GEIRR I
IPC分类号： G06F1/16 , H01L21/98 , G11C17/00 , H01L21/768 , H01L21/822 , H01L21/8239 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/00 , H01L27/10 , H01L27/112 , H01L51/40
摘要： A data storage and processing apparatus comprises ROM and/or WORM and/or REWRITEABLE memory modules and data processing modules is provided on a substrate. A memory and processing module are provided in a single main layer or multiple stacked main layers on the top of the substrate and the memory modules and the data processing module in each main layer communicate through vias, surface or edge connections with other main layers or circuitr y provided on or in the substrate. Further the apparatus comprises active circuits, transistors and/or diodes for operating the apparatus. Each main layer of a memory module and/or data processing module comprises a stack of functional sublayers, each functional sublayer realizing one or more specific circuit functions. At least some of the active circuitry is provided in the main lay er of main layers and at least some of the functional layers comprise a combinatio n of low temperature compatible film materials and low temperature compatible processed inorganic thin films. In a method for fabricating an apparatus of this kind, the main layers and t he functional sublayers thereof are deposited and processed under thermal conditions that avoids subjecting an already deposited and processed underlying layer or layers to a temperature exceeding a specified temperatur e value or to processed induced chemical damage. Particularly transient heatin g with pulse laser or particle beams is used for processing the inorganic semiconductor materials. Additional organic materials for the layers are deposited with processes commonly used in organic thin film technology.

7. 发明专利

AT354851T 未知
公开(公告)号：AT354851T
公开(公告)日：2007-03-15
申请号：AT03760179
申请日：2003-06-16
申请人： THIN FILM ELECTRONICS ASA
发明人： LJUNGCRANTZ HENRIK , EDVARDSSON NICLAS , CARLSSON JOHAN , GUSTAFSSON GOERAN
IPC分类号： G11C5/00 , H01L21/3205 , H01L27/115 , G11C11/22 , C23C14/24 , H01L21/285
摘要： In a method for making ferroelectric memory cells in a ferroelectric memory device a first electrode comprising at least one metal layer and optionally at least one metal oxide layer is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisting of a thin film of ferroelectric polymer is formed on the top of the first electrode layer and at least a second electrode comprising at least one metal layer and at least one metal oxide layer is formed on the ferroelectric layer. The second electrode is deposited by thermal evaporation of a high-purity evaporation source from an effusion cell onto the ferroelectric layer in a vacuum chamber filled with a gas or a gas mixture. A ferroelectric memory device wherein the memory cell has been made with the above method, comprises at least a first and a second set of respectively parallel electrodes, wherein the electrodes in a set are provided orthogonally to the electrodes of a nearest following set and with memory cells formed in a ferroelectric layer provided between successive electrode sets, such that memory cells are defined in the crossings between the electrodes which contact the ferroelectric layer on each side thereof.

8. 发明专利

NO20035831L 未知
公开(公告)号：NO20035831L
公开(公告)日：2005-06-30
申请号：NO20035831
申请日：2003-12-29
申请人： THIN FILM ELECTRONICS ASA
发明人： CARLSSON JOHAN , GUSTAFSSON GORAN , GUDESEN HANS GUDE , JOHANSSON MATS , KARLSSON CHRISTER , SANDSTROM PER , NORDAL PER-ERIK
IPC分类号： G11C7/02 , G11C11/22

9. 发明专利

NO20035831A 未知
公开(公告)号：NO20035831A
公开(公告)日：2005-06-30
申请号：NO20035831
申请日：2003-12-29
申请人： THIN FILM ELECTRONICS ASA
发明人： CARLSSON JOHAN , GUSTAFSSON GORAN , GUDESEN HANS GUDE , JOHANSSON MATS , KARLSSON CHRISTER , SANDSTROM PER , NORDAL PER-ERIK
IPC分类号： G11C7/02 , G11C11/22

10. 发明专利

DE60108636T2 未知
公开(公告)号：DE60108636T2
公开(公告)日：2005-06-23
申请号：DE60108636
申请日：2001-07-06
申请人： THIN FILM ELECTRONICS ASA OSLO
发明人： THOMPSON MICHAEL , NORDAL PER-ERIK , GUSTAFSSON GOERAN , CARLSSON JOHAN , GUDESEN GUDE
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , G11C7/06 , G11C7/10 , G11C8/18 , G11C11/22 , G11C7/00 , G11C8/00
摘要： A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.

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